EP0075221A2 - Circuit générant une tension de référence indépendante de la température - Google Patents

Circuit générant une tension de référence indépendante de la température Download PDF

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Publication number
EP0075221A2
EP0075221A2 EP82108371A EP82108371A EP0075221A2 EP 0075221 A2 EP0075221 A2 EP 0075221A2 EP 82108371 A EP82108371 A EP 82108371A EP 82108371 A EP82108371 A EP 82108371A EP 0075221 A2 EP0075221 A2 EP 0075221A2
Authority
EP
European Patent Office
Prior art keywords
circuit
voltage
temperature
transistor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82108371A
Other languages
German (de)
English (en)
Other versions
EP0075221A3 (fr
Inventor
Wilhelm Dr. Ing. Wilhelm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0075221A2 publication Critical patent/EP0075221A2/fr
Publication of EP0075221A3 publication Critical patent/EP0075221A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a circuit arrangement for generating a temperature-independent reference voltage in the form of a bandgap circuit in which the temperature-independent reference voltage corresponding to the bandgap of the semiconductor material of the components used in the circuit can be removed on a diode resistance path.
  • Such a known bandgap circuit is shown in Fig. 1 of the drawing.
  • two branches are present, one of which by a transistor T 1 connected as a diode with a current source I 1 impressing a current and a second through a transistor T 2 connected as a diode, a resistor R lying in series therewith 2 , a multi-emitter transistor T 3 in series with this and a further resistor R 3 in series is formed.
  • a temperature-independent reference voltage U BG can be removed from the diode resistance path T 2 , R 3 , which corresponds to the band gap of the semiconductor material of the components used in the circuit. For silicon, this voltage is approximately 1.2 volts.
  • the present invention has for its object to develop a circuit of the type mentioned above such that temperature-independent reference voltages can be generated, the value of which differs from the bandgap voltage of the semiconductor material used.
  • the resistance of the diode resistance path is in the form of a series circuit of at least two resistors which is connected in parallel with a diode, and in that the temperature-independent reference voltage on one of the resistors is removable . is.
  • the transistor T 2 connected as a diode has the series connection of two resistors X and Y in parallel. In this diode resistance path is a current. source I 2 a current is fed. A temperature-independent reference voltage U BG1 can be removed from resistor X.
  • circuit arrangement according to the invention according to FIG. 2 does not differ from the previously known circuit arrangement according to FIG. 1.
  • U BE means the base-emitter voltage of the transistor T 2 connected as a diode.
  • the temperature- stable reference voltage U BG1 in the circuit arrangement according to FIG. 2 is proportional to the bandgap voltage U BG according to FIG. 1, whereby the proportionality factor is determined by the resistors of the series connection of the two resistors X and Y.
  • temperature-independent reference voltages can be set, the value of which differs from the value of the bandgap voltage.
  • FIG. 3 A use of the circuit arrangement described above with reference to FIG. 2 in a circuit arrangement for generating an output direct voltage U R free from fluctuations in a supply DC voltage U O is shown in FIG. 3. It should be noted that such a circuit arrangement for generating the voltage U R in a German Patent application from the same filing date of the applicant with the title "Circuit arrangement for generating a DC output voltage independent of fluctuations in a DC supply voltage" is described.
  • a voltage stabilization circuit 10 in the form of a series connection of a series resistor R v and a diode chain D 1 to D N is connected to a DC supply voltage U o which is subject to fluctuations.
  • a pre-stabilized voltage U v can be removed at a tap between the resistor R v and the diode chain D 1 to D N.
  • a reference voltage circuit 11 in the form of a voltage divider at the DC supply voltage U o , which consists of a constant current source in the form of a transistor T 12 (optionally with an emitter resistor) and a potential shift branch in the form of a circuit of a transistor T 11 and the bandgap circuit arrangement according to FIG. 2 is formed.
  • a Ver Reinforcement having inverting amplifier 12 driven by a transistor T 22 , a collector resistor R 22 and an emitter resistor R 23 .
  • Another transistor T 21 is switched on in the collector circuit of transistor T 22 .
  • the inverting amplifier 12 controls an output driver 13 with a transistor T 32 connected as an emitter follower.
  • a load resistor R 32 and a transistor T 33 connected as a diode are located in the emitter branch of this transistor.
  • This transistor T 33 forms with the transistor T 12 in the reference voltage circuit 11 a current mirror, so that an identical current designated I 1 flows through these two branches.
  • a transistor T 31 In the collector branch of transistor T 32 there is a transistor T 31 , the driving of which is described in more detail below.
  • the output voltage U R can be removed from the emitter of transistor T 32 of output driver 13.
  • the transistor T 21 in the inverting amplifier 12 is tapped via a resistor R 21 and the transistor T 31 'in the output driver 13 via a resistor R 31 of the voltage stabilization circuit, to which the pre-stabilized voltage U v is applied.
  • the coupling via the resistor R 21 still improves the gain in the sense of a more precise setting of the gain -1 of the inverting amplifier.
  • the transistor T 11 in the reference voltage circuit is driven via a resistor R B from the connection point of the transistors T 31 and T 32 in the output driver 13.
  • the output voltage U R is, as described in the above-mentioned German patent application by the applicant, dependent on the temperature-independent reference voltage U BG1 generated by the bandgap circuit arrangement .
  • the current source I 1 according to FIG. 2 is formed by a circuit composed of the transistors T 31 T 32 and the resistor R 32 and the current source I 2 according to FIG. 2 is formed by the transistor branch T 12 .
  • the diode T 1 of FIG. 2 is formed by the diode D 33. Since a current mirror is formed by the elements T 12 and T 33 , in the present case the currents I 1 and I 2 according to FIG. 2 are the same, ie, in the circuit arrangement according to FIG. 3, the same current I 1 flows in both branches.
  • the transistor T 2 forming a diode in the circuit arrangement according to FIG. 2 is connected somewhat differently. Its collector is led to the supply voltage U O , so that its base-emitter path in the bandgap circuit arrangement forms the diode.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
EP82108371A 1981-09-21 1982-09-10 Circuit générant une tension de référence indépendante de la température Withdrawn EP0075221A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19813137504 DE3137504A1 (de) 1981-09-21 1981-09-21 Schaltungsanordnung zur erzeugung einer temperaturunabhaengigen referenzspannung
DE3137504 1981-09-21

Publications (2)

Publication Number Publication Date
EP0075221A2 true EP0075221A2 (fr) 1983-03-30
EP0075221A3 EP0075221A3 (fr) 1984-04-18

Family

ID=6142239

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82108371A Withdrawn EP0075221A3 (fr) 1981-09-21 1982-09-10 Circuit générant une tension de référence indépendante de la température

Country Status (4)

Country Link
US (1) US4490669A (fr)
EP (1) EP0075221A3 (fr)
JP (1) JPS5866132A (fr)
DE (1) DE3137504A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162266A1 (fr) * 1984-04-19 1985-11-27 Siemens Aktiengesellschaft Circuit générant une tension de référence indépendante de la température et de la tension d'alimentation
EP0182201A1 (fr) * 1984-11-12 1986-05-28 Matsushita Electric Industrial Co., Ltd. Dispositif de commande de la vitesse pour un moteur à courant continu
EP0217225B1 (fr) * 1985-09-30 1991-08-28 Siemens Aktiengesellschaft Circuit ajustable pour générer une tension de référence dépendant de la température

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250418A (ja) * 1984-05-25 1985-12-11 Rohm Co Ltd 基準電圧回路
JP2608871B2 (ja) * 1984-09-18 1997-05-14 松下電器産業株式会社 基準電圧発生回路
US4604568A (en) * 1984-10-01 1986-08-05 Motorola, Inc. Current source with adjustable temperature coefficient
EP0216265B1 (fr) * 1985-09-17 1991-12-11 Siemens Aktiengesellschaft Circuit pour générer une tension de référence comportant une dérive en température prévisible
JP2586136Y2 (ja) * 1991-08-30 1998-12-02 松下電工株式会社 キッチン用小物台
EP0539136B1 (fr) * 1991-10-21 1998-01-21 Matsushita Electric Industrial Co., Ltd. Dispositif générateur de tension
US5793239A (en) * 1995-06-29 1998-08-11 Analog Devices, Inc. Composite load circuit
DE19621749C2 (de) * 1996-05-30 1998-07-16 Siemens Ag Schaltungsanordnung zum Erzeugen eines Widerstandsverhaltens mit einstellbarem positiven Temperaturkoeffizienten sowie Verwendung dieser Schaltungsanordnung
US8575912B1 (en) * 2012-05-21 2013-11-05 Elite Semiconductor Memory Technology Inc. Circuit for generating a dual-mode PTAT current

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970876A (en) * 1973-06-01 1976-07-20 Burroughs Corporation Voltage and temperature compensation circuitry for current mode logic
US3886435A (en) * 1973-08-03 1975-05-27 Rca Corp V' be 'voltage voltage source temperature compensation network
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
JPS6048765B2 (ja) * 1977-12-19 1985-10-29 日本電気株式会社 定電圧半導体集積回路
US4249122A (en) * 1978-07-27 1981-02-03 National Semiconductor Corporation Temperature compensated bandgap IC voltage references

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162266A1 (fr) * 1984-04-19 1985-11-27 Siemens Aktiengesellschaft Circuit générant une tension de référence indépendante de la température et de la tension d'alimentation
EP0182201A1 (fr) * 1984-11-12 1986-05-28 Matsushita Electric Industrial Co., Ltd. Dispositif de commande de la vitesse pour un moteur à courant continu
US4742281A (en) * 1984-11-12 1988-05-03 Matsushita Electric Industrial Co., Ltd. Speed control apparatus for a DC motor
EP0217225B1 (fr) * 1985-09-30 1991-08-28 Siemens Aktiengesellschaft Circuit ajustable pour générer une tension de référence dépendant de la température

Also Published As

Publication number Publication date
JPS5866132A (ja) 1983-04-20
DE3137504A1 (de) 1983-04-07
EP0075221A3 (fr) 1984-04-18
US4490669A (en) 1984-12-25

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Inventor name: WILHELM, WILHELM, DR. ING.