EP0096190A1 - Capteur de champ magnétique - Google Patents

Capteur de champ magnétique Download PDF

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Publication number
EP0096190A1
EP0096190A1 EP83103617A EP83103617A EP0096190A1 EP 0096190 A1 EP0096190 A1 EP 0096190A1 EP 83103617 A EP83103617 A EP 83103617A EP 83103617 A EP83103617 A EP 83103617A EP 0096190 A1 EP0096190 A1 EP 0096190A1
Authority
EP
European Patent Office
Prior art keywords
layer
sub
magnetic field
field sensor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP83103617A
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German (de)
English (en)
Other versions
EP0096190B1 (fr
Inventor
Radivoje Dr. Ing. Popovic
Heinrich Peter Prof. Dr. Phys. Baltes
Tomislav Dipl.-Ing. Zajc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OFFERTA DI LICENZA AL PUBBLICO
Original Assignee
Landis and Gyr AG
LGZ Landis and Gyr Zug AG
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Application filed by Landis and Gyr AG, LGZ Landis and Gyr Zug AG filed Critical Landis and Gyr AG
Publication of EP0096190A1 publication Critical patent/EP0096190A1/fr
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Publication of EP0096190B1 publication Critical patent/EP0096190B1/fr
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Definitions

  • the invention relates to a magnetic field sensor that contains transistors in which at least one semiconductor layer consists of two sub-layers.
  • Magnetic field sensors are known, according to US Pat. No. 3,714,559 consisting of a “split drain” MOS transistor, according to US Pat. No. 3,714,523 consisting of a “split drain / split gate” MOS transistor and according to "IBM J. Res. Devetop. Vol. 25, No. 3, May 1981, A magnetic sensor utilizing an avatanching semiconductor device, AW Vinal ", consisting of a" split collector "bipolar transistor.
  • the magnetic field sensors described in the two specified US patents have a sensitivity that is too low for certain applications. In this case, they additionally require a downstream amplifier, with the disadvantage that the effect of its offset voltage and its noise add to the effect of that of the magnetic field sensor.
  • the magnetic field sensor described by Vinal has a high sensitivity, but it is unstable because of its mode of operation in the avalanche effect area and the resulting injection of hot charge carriers into the oxide.
  • a stable magnetic field sensor is to be implemented, the sensitivity of which can be achieved without using an additional amplifier
  • the left sub-layer is always the first and the right sub-layer. If the transistor types are interchanged, the polarities of the supply sources must always be reversed at the same time.
  • FIG. 1 schematically shows a magnetic field sensor 1a with divided “drain” semiconductor layers. It is subjected to the influence of a magnetic field 2 to be measured, acting perpendicular to its crystal surface, and consists of a first partial-layer transistor 3, e.g. P-type, and a second sub-layer transistor 4, e.g. of the N type. Both transistors are therefore of opposite polarity.
  • Each of the two transistors 3 and 4 has only a single divided semiconductor layer, in the example the "drain” semiconductor layer.
  • the "source” and the “bulk” semiconductor layers are then undivided. However, they are shown schematically divided; however, this only in order to be able to use the usual transistor representations.
  • the presence of these "sub-layers" in the drawing is indicated schematically by an electrical short-circuit connection between the two "sub-layers” shown.
  • the "source” and “bulk” semiconductor layers of the first transistor 3 are connected to the positive pole and those of the second transistor 4 are connected to the negative pole of a DC voltage source.
  • the first sublayer of the "drain” semiconductor layer of the first transistor 3 lies on the second sublayer of the "drain” semiconductor layer of the second transistor 4 and forms the first pole 5 of a two-pole magnetic field sensor output.
  • the second sub-layer of the "drain” semiconductor layer of the first transistor 3 is in turn connected to the first sub-layer of the "drain” semiconductor layer of the second transistor 4 and forms the second pole 6 of the magnetic field sensor output.
  • the "gate" semiconductor layer of the first transistor 3 forms one first single-pole input 7 and that of the second transistor 4 a second single-pole input 8 of the magnetic field sensor 1a.
  • a magnetic field sensor 1b with divided collector semiconductor layers is shown schematically in FIG.
  • This circuit corresponds to the circuit according to FIG. 1, only that the MOS transistors with a divided “drain” semiconductor layer are replaced by bipolar transistors with a divided collector semiconductor layer, that there are no “bulk” connections and that the emitters The task of the "Sources” and the bases take over that of the "Gates”.
  • FIG. 3 schematically shows a magnetic field sensor 1c with split “drain” and with split “gate” semiconductor layers.
  • This circuit corresponds to the circuit according to FIG. 1, except that it has four instead of two single-pole inputs, one for each sub-layer of the two “gate” semiconductor layers.
  • the second partial layer of the second transistor 4 has a first input 9
  • the first partial layer of the first transistor 3 has a second input 10
  • the second partial layer of the first transistor 3 has a third input 11
  • the first partial layer of the second transistor 4 is connected to a fourth input 12 of the magnetic field sensor 1c.
  • Each of the two sub-layer transistors 3 and 4 works as a magnetic field sensor in a manner known per se according to the state of the art.
  • the described combination of the two sub-layer transistors 3 and 4 adds up the voltages generated by the common magnetic field 2 in each of the thickened-layer transistors, so that the sensitivity of the magnetic field sensor is greatly increased, for example doubled.
  • the circuits according to FIG. 1 and FIG. 3 can also be produced using CMOS technology.
  • the circuits according to one of FIGS. 1 to 3 are self-stabilizing with respect to changes in temperature and supply voltage, and each of its sub-layer transistors has a large dynamic load.
  • the inputs 7, 8 or 9, 10, 11, 12 of the magnetic field sensor are used for setting the operating point by means of an operating point setting circuit, for example in accordance with the information in FIGS. 5 and 7 or in FIG. 9.
  • the input voltages are to be selected in such a way that that on the one hand both sub-layer transistors are in saturation and thus represent good high dynamic load resistances and on the other hand the output voltage of the magnetic field sensor assumes the mean value of the supply voltages, for example in the case of CMOS components the value (V DD + V SS ) / 2, where V DD is the "drain” and V SS is the "source” supply voltage.
  • the operating point setting circuit consists most simply of a CMOS inverter 14 which is fed back by means of a short-circuit connection, i.e. 4.
  • the CMOS inverter 14 contains a P and an N type MOS transistor, the two gates of which are connected to one another, the input of the CMOS inverter 14 and the two of which are connected to each other "form the inverter output.
  • the "source” and “bulk” semiconductor layers of the P-type transistor lie on the positive pole and those of the N-type transistor on the negative pole of the DC voltage source.
  • the transistors of the CMOS inverter 14 are best of the same or proportional dimensions as those of the partial-layer transistors of the magnetic field sensor.
  • the mode of operation of the circuit according to FIG. 4 is known per se from the McMos Handbook from Motorola, Phoenix Arizona, for an arbitrary feedback resistance value.
  • FIG. 5 shows an expanded magnetic field sensor with operating point setting and zero voltage correction as a block diagram.
  • the outputs of the two operating point setting circuits 13 are each with one of the two inputs 7 and 8 of the Effect of the magnetic field 2 subjected magnetic field sensor 1a connected.
  • Parallel to the two-pole magnetic field sensor output 5; 6, a voltage regulator 15 is connected, which regulates the zero voltage u 0ffset of the magnetic field sensor 1a to zero.
  • the operating point setting circuit 13 and the magnetic field sensor 1 a are fed by a common direct voltage supply source, the negative pole of which is also connected to the negative supply pole of the voltage regulator 15.
  • a voltage regulator 15 can be used.
  • Each pole of the two-pole input of the voltage regulator 15 is connected on the one hand directly to a first pole of a voltage-controlled current source 16a or 16b and on the other hand via an integrator 17a or 17b to the minus or plus input of a differential amplifier 18.
  • the inverting and the non-inverting output of the differential amplifier 18 each control a control input of the voltage-controlled current sources 16a or 16b via a stabilization network 19a or 19b.
  • the two second poles of the current sources 16a and 16b lie together at the supply negative pole of the voltage regulator 15.
  • the two integrators 17a and 17b are e.g. RC elements.
  • the differential amplifier 18 and the stabilization networks 19a and 19b can be dispensed with.
  • simple voltage-controlled current sources 16a and 16b serve P-type field effect transistors.
  • the integration of the output signal (k. H + U offset ) of the magnetic field sensor gives the result that only depends on the zero voltage U offset :
  • the integration time of the integrators 17a and 17b, for example the RC of the RC elements, must be chosen to be much larger than the period of the alternating current magnetic field.
  • Any DC component in the magnetic field 2 to be measured enters into U offset and is also canceled. This is an advantage with regard to any slowly varying interference and stray fields.
  • a disadvantage is that a DC component, the measurement of which is at best desired, is also suppressed.
  • FIG. 7 An extended magnetic field sensor with operating point setting, zero voltage correction and output signal shift keying is shown schematically in FIG. 7.
  • the operating point setting shade 13 controls the first input 7 of the magnetic field sensor 1a, the two-pole output 5; 6 directly to a two-pole signal input 20; 21 a shift key 22 is performed.
  • a two-pole signal output 23; 24 of the latter forms the output of the expanded magnetic field sensor, the output of which the voltage regulator 15 is connected in parallel.
  • a control input 25 of the switching circuit 22 is controlled by a rectangular high-frequency clock signal, while a feedback output 26 of the switching circuit 22 is connected to the second input 8 of the magnetic fat sensor 1a.
  • the operating point setting circuit 13 and the switching circuit 22 are fed directly and the magnetic field sensor 1a via a direct current source 27 from a common direct voltage supply source, the direct current source 27 lying between the positive pole of this direct voltage supply source and the positive pole of the feed input of the magnetic field sensor 1a.
  • the supply negative pole of the voltage regulator 15 is led to the negative pole of the direct voltage supply source.
  • the keying circuit 22 is shown.
  • the first pole 20 of their signal input 20; 21 is via a first switch 28 with the first pole 23 and the second pole 21 is connected via a second switch 29 to the second pole 24 of its signal output 23; 24 connected.
  • the first pole 20 of the signal input 20; 21 is additionally connected to the common via a third switch 30 and its second pole 21 via a fourth switch 31 Feedback output 26.
  • the control input 25 directly controls the control inputs of the first and fourth switches 28 and 31 and, via an inverter 32a known per se, for example an MC 14000 from Motorola, Phoenix, Arizona, the control inputs of the second and third switches 29 and 30.
  • the four switches are, for example, P-type field effect transistors. Their “bulk” semiconductor layers are then connected to the negative pole of a DC voltage source, which in turn also feeds the inverter 32a.
  • the four switches can also be known transmission gates, for example MC 14016 from Motorola.
  • the first and third switches 28 and 30 together form a first changeover switch 28; 30, which alternately the first pole 20 of the signal input 20, 21 of the keying circuit 22 with the first pole 23 of the signal output 23; 24 and connects to the feedback output 26.
  • the second and fourth switches 29 and 31 together form a second changeover switch 29; 31 which in turn has the second pole 21 of the signal input 20; 21 with the second pole 24 of the signal output 23; 24 and connects to the feedback output 26.
  • Both changeover switches are operated in push-pull mode with the aid of the high-frequency clock signal applied to the control input 25.
  • a pole 6 or 5 of the magnetic field sensor output according to FIG. 7 with the associated pole 23 or 24 of the signal output 23; 24 of the expanded magnetic field sensor, while the other pole 5 or 6 is directly coupled back to the second input 8 of the magnetic field sensor 1a or 1b via a short-circuit connection.
  • each switch of one of the two switch pairs 28; 31 and 29; 30 replaced by a short shot connection and the other pair of switches are omitted.
  • the closed contacts of the two changeover switches 28; 30 and 29; 31 can each be replaced by a short-circuit connection.
  • An extended magnetic field sensor with a single-pole output is then obtained. This is to be avoided If and if a two-pole output is required, the switching circuit 22 described must be used.
  • the positive and the negative pole of the output signal of the magnetic field sensor 1a or 1b is then alternately scanned in terms of high frequency ("sampling"). Due to the 180 0- phase shift of the signals at the two sampled signal poles, the sensitivity of the extended magnetic field sensor is doubled. The further utilization of a high-frequency signal is also much easier.
  • FIG. 9 An expanded magnetic field sensor with a feedback network is shown in FIG. 9.
  • the second and third inputs 10 and 11 of the magnetic field sensor 1c are connected to one another directly and via a first resistor R1 to the first input 9 and via a second resistor R2 to the fourth input 12 of the magnetic field sensor 1c.
  • the advantage of this circuit is that the size of the feedback can be freely selected using the four resistors and a high sensitivity can thus be set.
  • the circuit according to FIG. 9 has the disadvantage that the distances between the sub-layers of the “gates” have to be very small and therefore require “charge coupled device” technology for the production.
  • the four external feedback resistors R1 to R4 of FIG. 9 are integrated into the “gate” material, this disadvantage is avoided and a structure according to FIG. 10 is created.
  • the first sub-layer transistor 3 consists of a "source” 33, a “gate” 34 and a “drain” with a first "drain” sub-layer 35a and a second “drain” sub-layer 35b.
  • the second sub-layer transistor 4 of opposite polarity consists of a "source” 36, a "gate” 37 and a “drain” with a first "drain” layer 38a and a second “drain” layer 38b.
  • Each "gate” is very wide and, as already mentioned, consists of material of finite but very high resistivity. It has a connector on each of its two ends. The first of these connections and the first “drain” sublayer is shown on the left in the drawing and the second connection or second sublayer is shown on the right.
  • the voltage follower 32b consisting for example of an amplifier with the voltage amplification factor "1" or a “source follower", serves in the representations of FIGS. 9 and 10 to relieve the output due to its high-impedance input 5; 6 of the magnetic field sensor 1c or 1d, so that the feedback resistors of this output 5; 6 are no longer directly connected in parallel.
  • the magnetic field sensors described are e.g. used to measure the electrical current in an electricity meter.
  • An advantageous arrangement shown in Figs. 11a and 11b is to place the conductor 40 of the electric current along the longitudinal axis of an elongated annular magnetic core 41 made of soft magnetic material, e.g. made of mum metal, which is slit lengthways to form an air gap 42.
  • a magnetic field sensor 1a, 1b, 1c or 1d is located in the air gap 42.
  • 11c shows the cross section of the air gap 42, the magnetic core side surfaces of which run parallel to one another on the side of the ring interior and parallel to the surface of the magnetic field sensor 1a, 1b, 1c or 1d.
  • the angle 43 e.g. has a value of 60 °, which brings about a magnetic relief of the magnetic core 41.
  • the sensor has dimensions such that, in a first approximation, it can be assumed to be punctiform in relation to the dimensions of the magnetic core side surfaces of the air gap 42 and is arranged in the part of the air gap which has parallel magnetic core side surfaces.

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  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
EP83103617A 1982-06-16 1983-04-14 Capteur de champ magnétique Expired EP0096190B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH3717/82 1982-06-16
CH3717/82A CH659917A5 (de) 1982-06-16 1982-06-16 Magnetfeldsensor.

Publications (2)

Publication Number Publication Date
EP0096190A1 true EP0096190A1 (fr) 1983-12-21
EP0096190B1 EP0096190B1 (fr) 1987-08-19

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EP83103617A Expired EP0096190B1 (fr) 1982-06-16 1983-04-14 Capteur de champ magnétique

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US (1) US4677380A (fr)
EP (1) EP0096190B1 (fr)
JP (1) JPS595976A (fr)
CH (1) CH659917A5 (fr)
DE (1) DE3373166D1 (fr)
ES (1) ES8405201A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083174A (en) * 1990-07-31 1992-01-21 The United States Of America As Represented By The Secretary Of The Navy Floating gate magnetic field sensor
EP0530006A1 (fr) * 1991-08-26 1993-03-03 Medtronic, Inc. Capteur de champ magnétic pour dispositif médical implantable
WO1994012238A1 (fr) * 1992-11-24 1994-06-09 Medtronic, Inc. Dispositif medical implantable avec commutateur actionne magnetiquement

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US4786993A (en) * 1986-06-30 1988-11-22 International Business Machines Corporation Voltage amplifier for constant voltage biasing and amplifying signals from a MR sensor
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
JP2899825B2 (ja) * 1990-08-24 1999-06-02 株式会社新川 リードフレーム押え装置
RU2072590C1 (ru) * 1994-01-14 1997-01-27 Акционерное общество закрытого типа "VL" Магнитоуправляемая логическая ячейка
US5489846A (en) * 1994-08-03 1996-02-06 United Microelectronics Corp. Magnetic-field sensor with split-drain MOSFETS
US5591996A (en) * 1995-03-24 1997-01-07 Analog Devices, Inc. Recirculating charge transfer magnetic field sensor
US5760581A (en) * 1996-09-17 1998-06-02 Intel Corporation Method and apparatus coupling together magneto field effect transistors in series to accumulate the effects of magnetic field for improved sensitivity and linearity
US5801533A (en) * 1996-09-17 1998-09-01 Intel Corporation Method and apparatus with cascode biasing magneto field effect transistors for improved sensitivity and amplification
US6016050A (en) * 1998-07-07 2000-01-18 Analog Devices, Inc. Start-up and bias circuit
US6891389B1 (en) 2000-12-01 2005-05-10 The Texas A&M University System System and method for detecting quiescent current in an integrated circuit
US6885302B2 (en) * 2002-07-31 2005-04-26 Itron Electricity Metering, Inc. Magnetic field sensing for tamper identification
US20070167741A1 (en) * 2005-12-30 2007-07-19 Sherman Jason T Apparatus and method for registering a bone of a patient with a computer assisted orthopaedic surgery system
US7525309B2 (en) * 2005-12-30 2009-04-28 Depuy Products, Inc. Magnetic sensor array
US20070161888A1 (en) * 2005-12-30 2007-07-12 Sherman Jason T System and method for registering a bone of a patient with a computer assisted orthopaedic surgery system
US8862200B2 (en) * 2005-12-30 2014-10-14 DePuy Synthes Products, LLC Method for determining a position of a magnetic source
US8068648B2 (en) * 2006-12-21 2011-11-29 Depuy Products, Inc. Method and system for registering a bone of a patient with a computer assisted orthopaedic surgery system
WO2008153004A1 (fr) 2007-06-11 2008-12-18 Alps Electric Co., Ltd. Dispositif de détection magnétique et produit électrique
US9728581B2 (en) * 2015-11-04 2017-08-08 Texas Instruments Incorporated Construction of a hall-effect sensor in a buried isolation region
US12369981B2 (en) 2023-02-07 2025-07-29 Depuy Ireland Unlimited Company Systems and methods for bone model registration with adaptive soft tissue thickness

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US3610968A (en) * 1970-06-08 1971-10-05 Sony Corp Magnetoresistance circuits and elements
EP0035103A1 (fr) * 1980-01-18 1981-09-09 Siemens Aktiengesellschaft Dispositif integré monolithique comprenant deux sondes à effet Hall

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GB886455A (en) * 1959-04-25 1962-01-10 Landis & Gyr Ag Improvements in or relating to ammeters
US3486085A (en) * 1966-03-30 1969-12-23 Intelligent Instr Inc Multilayer integrated circuit structure
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US3714559A (en) * 1971-08-10 1973-01-30 Texas Instruments Inc Method of measuring magnetic fields utilizing a three dram igfet with particular bias
US3829883A (en) * 1972-08-31 1974-08-13 R Bate Magnetic field detector employing plural drain igfet
JPS5424600Y2 (fr) * 1973-05-01 1979-08-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3610968A (en) * 1970-06-08 1971-10-05 Sony Corp Magnetoresistance circuits and elements
EP0035103A1 (fr) * 1980-01-18 1981-09-09 Siemens Aktiengesellschaft Dispositif integré monolithique comprenant deux sondes à effet Hall

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083174A (en) * 1990-07-31 1992-01-21 The United States Of America As Represented By The Secretary Of The Navy Floating gate magnetic field sensor
EP0530006A1 (fr) * 1991-08-26 1993-03-03 Medtronic, Inc. Capteur de champ magnétic pour dispositif médical implantable
WO1994012238A1 (fr) * 1992-11-24 1994-06-09 Medtronic, Inc. Dispositif medical implantable avec commutateur actionne magnetiquement

Also Published As

Publication number Publication date
JPS595976A (ja) 1984-01-12
US4677380A (en) 1987-06-30
CH659917A5 (de) 1987-02-27
ES523265A0 (es) 1984-05-16
EP0096190B1 (fr) 1987-08-19
JPH0252994B2 (fr) 1990-11-15
DE3373166D1 (en) 1987-09-24
ES8405201A1 (es) 1984-05-16

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