EP0101843A2 - Méthode de fabrication de conducteurs à froid céramiques à tolérances restreintes des valeurs électriques - Google Patents
Méthode de fabrication de conducteurs à froid céramiques à tolérances restreintes des valeurs électriques Download PDFInfo
- Publication number
- EP0101843A2 EP0101843A2 EP83106675A EP83106675A EP0101843A2 EP 0101843 A2 EP0101843 A2 EP 0101843A2 EP 83106675 A EP83106675 A EP 83106675A EP 83106675 A EP83106675 A EP 83106675A EP 0101843 A2 EP0101843 A2 EP 0101843A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- ceramic
- ptc
- area
- resistance value
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004020 conductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000010432 diamond Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 19
- 238000005245 sintering Methods 0.000 description 11
- 239000007858 starting material Substances 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010285 flame spraying Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 208000031636 Body Temperature Changes Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000037213 diet Effects 0.000 description 1
- 235000005911 diet Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
Definitions
- the invention relates to a method for producing ceramic PTC resistors (PTC resistors) with closely tolerated electrical values, in particular with a closely tolerated nominal resistance value R 25 at room temperature, in which a sintered body made of the ceramic PTC thermistor material on opposite surfaces with barrier layers free metal coatings as Electrodes are provided, to which power supply elements (wires, contact plates) can be attached later if necessary.
- PTC resistors PTC resistors
- ceramic PTC thermistor or PTC resistor is used here for a temperature-dependent resistor (thermistor), which is a semiconducting resistor that experiences a significant change in its electrical resistance when its body temperature changes.
- thermistor temperature-dependent resistor
- Such temperature-dependent resistors are defined in the German standard DIN 44080 from December 1976 "PTC thermistor” with regard to terms and properties.
- the lattice disturbance is the first Line with a slight oxygen deficit, which is achieved in the manufacturing process by sintering in a reducing atmosphere.
- CH-PS 272 927 also describes the semiconducting effect of ceramic material with a perovskite structure, the lattice perturbation being achieved by adding lanthanum oxide, with La 3+ occupying divalent lattice sites in the perovskite lattice.
- GB-PS 714 965 which corresponds to DE-PS 929 350 and has the same priority, describes further doping materials for ceramic material with a perovskite structure, applications for current stabilization, protection against overload, temperature control, etc. being specified.
- a base metal is arranged in the vicinity of the ceramic and a nobler, solderable metal is arranged towards the outer surface, alloys of such metals being able to be used, for example indium-silver contacts, indium gallium-silver contacts, a first layer made of aluminum, galvanically, by vapor deposition or by flame spraying, and an overlying layer made of a solderable metal, for example copper or silver, z. B. also by flame spraying.
- DE-PS 514 902 describes a method in which small capacitors for high-frequency technology are produced by providing a continuous strip of dielectric material on both sides with a conductive metal coating and flat pieces corresponding to the size of the desired capacitance value Strips are cut off.
- the dielectric properties of this strip are constant and, in principle, do not fluctuate as long as the thickness and width of the strips remain the same. This is not the case with ceramic PTC thermistors.
- GB-PS 991 649 describes a method in which electrical components, namely resistors or capacitors, are cut to a suitable length from a piece previously produced. For the production of electrical resistors in this way, it is provided that the metal layer serving as the resistance element in the overall body is first trimmed to a required value by grinding operations, in order then to separate the resistors. Such a measure is also not possible with ceramic PTC thermistors.
- DE-AS 1 122 145 describes a method for producing electrical resistors, in which the resistors are cut off in a corresponding length by a larger rod.
- the electrical resistance of the larger piece has a value due to the starting material and the manufacturing process, which is assumed to be given.
- DE-AS 1 764 542 describes a method for producing an electrical stacked capacitor, in which capacitor strips are stacked to form a mother capacitor, the mother capacitor is provided with end contact layers by means of looping and is subjected to a heat treatment, and then by cuts perpendicular to the course of the capacitor strips in the desired sub-capacitors is divided, the mother capacitor being stacked and contacted such that the desired sub-capacitors can be cut off at any point on the mother capacitor, furthermore all process steps which influence the capacitance of the capacitor are carried out on the mother capacitor, then the capacitance of the entire mother capacitor or larger portions thereof are measured and the length corresponding to the desired capacitance of the individual capacitors is determined, and finally partial capacitors with the corresponding length from the mother capacitor or a larger section of the same.
- the capacitance of such a capacitor depends on the dielectric effective area, the thickness of the dielectric, the thickness of the air gaps between the capacitively active layers and the dielectric constant of the dielectric. Of these quantities, only the dielectric constant can be regarded as constant.
- R (g. D): F the resistance value R is directly proportional to the thickness d of the body and to the specific resistance g and inversely proportional to the area F. Area F and thickness d are determined by the design (also the Burning shrinkage must be taken into account), and the specific resistance P arises, depending on the starting material, the pretreatment and the sintering conditions, during the production itself. In the state of the art, no factor remains freely selectable (degree of freedom).
- the present invention is based on the object to specify a method which is less dependent on the purity of the starting materials and on the constancy of the individual treatment and sintering parameters, i.e. on the parameters determining the specific resistance, and which nonetheless leads to ceramic PTC thermistors with closely tolerated electrical values, in particular with a narrowly tolerated nominal resistance value R 25 leads and thereby reduces the proportion of rejects.
- Tolerated within the meaning of the present invention means a deviation from the desired value at most + 20%, preferably by + 10%.
- the method of the type specified at the outset is characterized in that a sintered plate-shaped body made of ceramic thermistor material is used, the surface of which, given the thickness and given electrical properties of the material (specific resistance, reference temperature, dielectric strength, steepness of the increase in resistance)
- a multiple of the area of the ceramic thermistor that is ultimately to be produced is that this plate-shaped overall body is provided on its large areas with metal layers as metal coverings, after which the resistance value attributable to the area unit is determined and then the overall body is converted into the PTC thermistor desired in terms of the closely tolerated electrical values Form of squares, rectangles, triangles or equilateral diamonds is divided.
- the metal layer serving as metal coating is applied in a manner known per se, as already explained in the discussion of the prior art. It is preferable to produce an aluminum base layer on the base body from thermistor material by galvanic means and then to apply a copper layer by means of the flame spraying method, as already described in DE-OS 28 38 508.
- the edge zones of the entire body are separated before the resistance value attributable to the unit area is determined, because the determination then leads to more precise values.
- the advantage of the method of the present invention is that the surface F can be freely selected after the sintering and metallization process, as a result of which the object is achieved in an extremely satisfactory manner.
- the advantages are achieved that the mass selection is simplified, a considerable rationalization effect results compared to the individual production, and that the dielectric strength of the ceramic PTC thermistor, in particular in the case of PTC thermistor masses for resistors to be operated at high temperatures, is improved because the surface at the separating edge is separated by the separation process is newly created and is not affected by the sintering influences that occur during individual production.
- 1 denotes the entire body.
- the body 1 is provided with a metal coating, not shown in the drawing, on both large surfaces on its entire surface, but at least also on the surface regions which are to be used later as individual PTC thermistors, before the separation.
- the edge regions 7 and 8 can be seen on the narrow sides 11 and the long sides 12 of the body 1.
- the body 1 After determining the resistance value per unit area, the body 1 is divided along lines 15, 16 which run in the direction of the x-axis and in the direction of the y-axis.
- the edge zones 7 and 8 are either determined before the resistance value attributable to the unit area tes separated, in the case when the entire surface including the side surfaces in the thickness direction of the entire body 1 are provided with the metal layer. If the metal layer, with the exception of the edge regions 7 and 8, is applied by screen printing or by means of a stencil, then these edge zones 7 and 8 can only be removed when the entire body 1 is divided into the individual PTC thermistors 3 or 4.
- the entire body 2 made of ceramic PTC material can be divided into isosceles ceramic PTC thermistors 5 or also into diamond-shaped PTC thermistors 6 by separating lines 17, 18 and 19 which are each at an angle of 60 ° (also highlighted by hatching).
- edge zones 9 and 10 located on the broad sides 13 and long side 14 are removed in the manner and at the time as described in FIG. 1.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3227907 | 1982-07-26 | ||
| DE19823227907 DE3227907A1 (de) | 1982-07-26 | 1982-07-26 | Verfahren zum herstellen von keramischen kaltleitern mit eng tolerierten elektrischen werten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0101843A2 true EP0101843A2 (fr) | 1984-03-07 |
| EP0101843A3 EP0101843A3 (fr) | 1984-12-05 |
Family
ID=6169379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP83106675A Withdrawn EP0101843A3 (fr) | 1982-07-26 | 1983-07-07 | Méthode de fabrication de conducteurs à froid céramiques à tolérances restreintes des valeurs électriques |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0101843A3 (fr) |
| JP (1) | JPS5932103A (fr) |
| DE (1) | DE3227907A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0398811A3 (fr) * | 1989-05-18 | 1992-05-20 | Fujikura Ltd. | Procédé de fabrication d'un thermistor PTC |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017097976A1 (fr) | 2015-12-09 | 2017-06-15 | Dbk David + Baader Gmbh | Résistance de décharge |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1553083A (fr) * | 1967-11-29 | 1969-01-10 |
-
1982
- 1982-07-26 DE DE19823227907 patent/DE3227907A1/de not_active Withdrawn
-
1983
- 1983-07-07 EP EP83106675A patent/EP0101843A3/fr not_active Withdrawn
- 1983-07-21 JP JP13357083A patent/JPS5932103A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0398811A3 (fr) * | 1989-05-18 | 1992-05-20 | Fujikura Ltd. | Procédé de fabrication d'un thermistor PTC |
| US5212466A (en) * | 1989-05-18 | 1993-05-18 | Fujikura Ltd. | Ptc thermistor and manufacturing method for the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0101843A3 (fr) | 1984-12-05 |
| JPS5932103A (ja) | 1984-02-21 |
| DE3227907A1 (de) | 1984-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Designated state(s): AT DE GB IT |
|
| PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
| AK | Designated contracting states |
Designated state(s): AT DE GB IT |
|
| 17P | Request for examination filed |
Effective date: 19841214 |
|
| 17Q | First examination report despatched |
Effective date: 19860312 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 19860723 |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: KAHR, WERNER |