EP0163005A1 - Déphaseur à réflexion - Google Patents

Déphaseur à réflexion Download PDF

Info

Publication number
EP0163005A1
EP0163005A1 EP85101600A EP85101600A EP0163005A1 EP 0163005 A1 EP0163005 A1 EP 0163005A1 EP 85101600 A EP85101600 A EP 85101600A EP 85101600 A EP85101600 A EP 85101600A EP 0163005 A1 EP0163005 A1 EP 0163005A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
phase shifter
semiconductor element
housing
tuning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85101600A
Other languages
German (de)
English (en)
Other versions
EP0163005B1 (fr
Inventor
Rainer Dr. Geissler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Priority to AT85101600T priority Critical patent/ATE33910T1/de
Publication of EP0163005A1 publication Critical patent/EP0163005A1/fr
Application granted granted Critical
Publication of EP0163005B1 publication Critical patent/EP0163005B1/fr
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube

Definitions

  • the present invention relates to a reflection phase shifter, consisting of a short-circuited, height-reduced waveguide, at least one switchable semiconductor component arranged therein, which is accommodated in a housing, and at least one tuning pin protruding into the height-reduced waveguide.
  • Such a reflection phase shifter is known from the microwave magazine, Vol. 8, No. 6, 1982, pages 688-690.
  • the semiconductor element, a PIN diode, housed in a housing is firmly arranged in a waveguide with a reduced height.
  • this waveguide also has a reduced width, so that it acts like a blocking wave waveguide.
  • tuning pins protruding into the blocking wave waveguide are required in order to set the phase shifter to a desired phase angle and to tune this phase angle to a broad frequency band.
  • the invention is based on the object of specifying a reflection phase shifter of the type mentioned at the outset, which requires fewer tuning pins in order to be able to set it to a desired phase angle over a wide band.
  • this object is achieved in that the housing with the semiconductor element, as a function of a tuning device, projects through a wall of the height-reduced waveguide into the latter with an adjustable penetration depth, and in that the tuning pin faces the housing of the semiconductor element.
  • the reflection phase shifter according to the invention can be easily and with ge, since it needs only a few tuning means vote in a short amount of time.
  • the reflection phase shifter shown in FIGS. 1 and 2 consists of a waveguide 1 with a reduced height and short-circuited on one side, at the open end of which a waveguide section 2 with a linear cross-sectional expansion is connected, which merges with a waveguide 3 with cross-sectional dimensions designed for the operating frequency. Via the waveguide 3 with normal cross-sectional dimensions, a high-frequency signal is fed to the height-reduced waveguide 1, which is reflected therein, undergoes a certain phase shift and then runs back through the waveguide 3.
  • the reduced-height waveguide 1 there is a switchable semiconductor element 5 housed in a housing 4, a PIN diode.
  • a PIN diode By reducing the height of the waveguide 1 in which the diode 5 is located, the waveguide line impedance is reduced, which results in a better coupling between the diode and the waveguide.
  • the housing 4 with the PIK diode 5 protrudes through a waveguide wall on the broad side into the height-reduced waveguide 1 and is held screwable in the waveguide wall so that the penetration depth of the housing 4 can be adjusted.
  • the housing 4 thus has the function of a tuning device with a variable penetration depth.
  • About the depth of penetration dee lenosuses 4 in the height-reduced waveguide 1 can be set in a desired range phase angle.
  • the housing 4 is brought into such a position that the frequency response of the phase moves in an angular range from 70 ° to 110 ° in a frequency band from 17.7 GHz to 19.7 GHz.
  • an adjustable tuning pin 6 made of sapphire. Sapphire shows a much better broadband tuning behavior compared to metal tuning pins, where unwanted resonances can easily occur.
  • the pitch of the frequency response of the phase depends on the depth of penetration of the tuning pin 6 into the waveguide 1 with a reduced height. So that the phase shifter becomes broadband, this tuning pin 6 is to be set so that the frequency response of the phase is flat over the largest possible frequency range. Since the diode impedance is compensated here directly in the diode plane by the tuning pin, and frequency dependency due to line transformations is thereby avoided, the arrangement is very broadband.
  • the reflection phase shifter can thus be broadband tuned to a desired phase shift.
  • a section AA through the reflection phase shifter the supply voltage is fed through a waveguide wall which is perpendicular to the waveguide wall penetrated by the housing 4 of the PIN diode, via a wire 7 of the PIN diode.
  • the wire 7 should be very thin so that the field in the height-reduced waveguide 1 is disturbed as little as possible.
  • the length of the wire 7 is about a quarter of the operating wavelength ⁇ on a coaxial line, so that the short circuit of a low-pass filter connected to the wire - in the form of an X / 4 Radial line transformer 8 (choke structure) is transformed into an open circuit on the PIN diode.

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
EP85101600A 1984-04-27 1985-02-14 Déphaseur à réflexion Expired EP0163005B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT85101600T ATE33910T1 (de) 1984-04-27 1985-02-14 Reflexionsphasenschieber.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843415674 DE3415674A1 (de) 1984-04-27 1984-04-27 Reflexionsphasenschieber
DE3415674 1984-04-27

Publications (2)

Publication Number Publication Date
EP0163005A1 true EP0163005A1 (fr) 1985-12-04
EP0163005B1 EP0163005B1 (fr) 1988-04-27

Family

ID=6234481

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85101600A Expired EP0163005B1 (fr) 1984-04-27 1985-02-14 Déphaseur à réflexion

Country Status (5)

Country Link
US (1) US4613835A (fr)
EP (1) EP0163005B1 (fr)
AT (1) ATE33910T1 (fr)
CA (1) CA1232036A (fr)
DE (2) DE3415674A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3617568A1 (de) * 1986-05-24 1987-11-26 Licentia Gmbh Phasenschieberanordnung in hohlleitertechnik

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB672543A (en) * 1950-02-08 1952-05-21 Gen Electric Co Ltd Improvements in or relating to crystal contact devices
US3452255A (en) * 1966-05-07 1969-06-24 Marconi Co Ltd Varactor diode devices
GB1180196A (en) * 1967-04-15 1970-02-04 Telefunken Patent Improvements in or relating to Phase Changers
US3521203A (en) * 1967-11-14 1970-07-21 Bell Telephone Labor Inc Magnetic mounting for pill-type diodes
FR2134610A1 (fr) * 1971-04-28 1972-12-08 Japan Broadcasting Corp
DE2618785A1 (de) * 1974-10-22 1977-11-17 Licentia Gmbh Pin-dioden-phasenschieber der hohlleitertechnik
GB2018078A (en) * 1978-03-31 1979-10-10 Thomson Csf Solid state millimetre wave source
EP0090694A1 (fr) * 1982-03-23 1983-10-05 Thomson-Csf Oscillateur accordable en fréquence constitué par une diode oscillatrice et une diode à capacité variable, et procédé d'accord mécanique de cet oscillateur

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB672543A (en) * 1950-02-08 1952-05-21 Gen Electric Co Ltd Improvements in or relating to crystal contact devices
US3452255A (en) * 1966-05-07 1969-06-24 Marconi Co Ltd Varactor diode devices
GB1180196A (en) * 1967-04-15 1970-02-04 Telefunken Patent Improvements in or relating to Phase Changers
US3521203A (en) * 1967-11-14 1970-07-21 Bell Telephone Labor Inc Magnetic mounting for pill-type diodes
FR2134610A1 (fr) * 1971-04-28 1972-12-08 Japan Broadcasting Corp
DE2618785A1 (de) * 1974-10-22 1977-11-17 Licentia Gmbh Pin-dioden-phasenschieber der hohlleitertechnik
GB2018078A (en) * 1978-03-31 1979-10-10 Thomson Csf Solid state millimetre wave source
EP0090694A1 (fr) * 1982-03-23 1983-10-05 Thomson-Csf Oscillateur accordable en fréquence constitué par une diode oscillatrice et une diode à capacité variable, et procédé d'accord mécanique de cet oscillateur

Also Published As

Publication number Publication date
DE3562434D1 (en) 1988-06-01
ATE33910T1 (de) 1988-05-15
EP0163005B1 (fr) 1988-04-27
CA1232036A (fr) 1988-01-26
US4613835A (en) 1986-09-23
DE3415674A1 (de) 1985-10-31

Similar Documents

Publication Publication Date Title
DE2738326C2 (fr)
DE4090507C2 (de) Oszillatorschaltung
DE2415284A1 (de) Resonanzfilter fuer ebene uebertragungsleitungen
EP0101611B1 (fr) Module d'émission-réception
DE69805095T2 (de) Mit verschiedenen oberflächen gekoppelter resonator
DE2941826A1 (de) Mikrowellen-oszillator
DE3129425A1 (de) Mikrowellenantenne fuer zirkularpolarisation
DE2928346C2 (de) Aus koaxialen Resonatoren bestehendes elektrisches Filter
DE2607116C2 (de) Hochfrequenzmischer mit wenigstens einem Yttrium-Eisengranat-Abstimmelement
DE2905684C2 (de) Elektronische Abstimmschaltung
DE2506425C2 (de) Hohlleiter/Microstrip-Übergang
DE3007581C2 (de) Oszillator mit einem dielektrischen Resonator
DE69123092T2 (de) Mikrowellenstreifenresonatoren
DE2101334A1 (de) Hochempfindlicher superregenerativer Mikrowellenempfanger
DE2331500C3 (de) Frequenzwandler für Mikrowellen
EP0163005B1 (fr) Déphaseur à réflexion
DE1616354B1 (de) Halterung fuer eine Halbleitereinrichtung in einem Hohlleiter
DE60015692T2 (de) Oszillator und Funkgerät
DE2907472C2 (de) Mikrowellen-Abstimmvorrichtung
DE3938726C2 (de) Phasendrehglied
EP0285879B1 (fr) Filtre de polarisation à large bande
EP0117257B1 (fr) Oscillateur stabilisé à micro-ondes
EP0101612B1 (fr) Oscillateur comportant un dipôle comme élément actif
DE2812410C2 (de) Mikrowellen-Oszillator
DE3315860A1 (de) Mischer

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT CH DE LI NL

17P Request for examination filed

Effective date: 19851230

17Q First examination report despatched

Effective date: 19870518

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT CH DE LI NL

REF Corresponds to:

Ref document number: 33910

Country of ref document: AT

Date of ref document: 19880515

Kind code of ref document: T

REF Corresponds to:

Ref document number: 3562434

Country of ref document: DE

Date of ref document: 19880601

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 19900221

Year of fee payment: 6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19900228

Year of fee payment: 6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 19900430

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Effective date: 19910214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Effective date: 19910228

Ref country code: CH

Effective date: 19910228

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19910411

Year of fee payment: 7

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19910901

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee
REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19921103