EP0169744A2 - Source d'ions - Google Patents

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Publication number
EP0169744A2
EP0169744A2 EP85305339A EP85305339A EP0169744A2 EP 0169744 A2 EP0169744 A2 EP 0169744A2 EP 85305339 A EP85305339 A EP 85305339A EP 85305339 A EP85305339 A EP 85305339A EP 0169744 A2 EP0169744 A2 EP 0169744A2
Authority
EP
European Patent Office
Prior art keywords
ions
chamber
ion source
plasma
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP85305339A
Other languages
German (de)
English (en)
Other versions
EP0169744A3 (fr
Inventor
Michael Inman
Thomas Stanley Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB848419070A external-priority patent/GB8419070D0/en
Priority claimed from GB848419039A external-priority patent/GB8419039D0/en
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of EP0169744A2 publication Critical patent/EP0169744A2/fr
Publication of EP0169744A3 publication Critical patent/EP0169744A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation

Definitions

  • the present invention relates to ion sources.
  • Ion sources are known in which a gaseous material, ions of which are to be generated, is excited to a fully ionised, or plasma, state by means of radio-frequency alternating fields. The desired ions are then extracted from the source by means of an electric field produced by one or more extraction electrodes.
  • Such sources as are known, however, produce predominantly beams of molecular ions, and for some purposes, for example, the production of insulating regions in semiconductor substrates for use in the production of very large scale integrated circuits, or regions which need to have specific types of electrical conductivity in such circuits, molecular ions are deleterious.
  • An object of the present invention therefore is to provide a radio frequency plasma ion source which produces predominantly atomic ions.
  • an ion source comprising a chamber which can be evacuated, means for introducing into the chamber in a gaseous state a material ions of which are to be provided by the source, means for applying an alternating electromagnetic field to the gaseous medium whereby it can be excited to a plasma state, means for applying an electric field to extract ions from the plasma, means for maintaining the walls of the chamber at an elevated temperature, and means for applying a solenoidal or radial multipolar magnetic field to a plasma within the chamber.
  • the energy required to heat the walls of the chamber may be derived from the plasma or applied from an external source.
  • the electron temperature within it can be raised to a value such that the molecules of the plasma material are dissociated and prevented from recombining.
  • the ion source will produce predominantly atomic ions. Any unwanted molecular ions can be removed by means of a magnetic analyser.
  • the ion source includes an extractor electrode having a plurality of parallel slits therein so as to produce a plurality of parallel individual beams.
  • an ion source comprises a chamber 1 some 700 mm in diamater the wall 2 of which is made of quartz.
  • the wall 2 In the wall 2 are a first port 3 by means of which the chamber 3 can be evacuated, and a second port 4 by means of which a volatile or gaseous material, ions of which are to be provided by the source, can be introduced into the chamber 1.
  • a coil 5 Surrounding the chamber 1 is a coil 5 through which an electric current can be passed from a radio-frequency power source 6 of a known type, which will not be described further. The frequency and power output of the power source 6 are such that the material introduced into the chamber 1 is fully excited into the plasma state.
  • a second power source 7 which is adapted to provide a steady solenoidal magnetic field 8 in the region of the major part of the wall 2 of the chamber 1.
  • Two coils 9 and 10, respectively are provided to isolate the power source 7 from the radio frequency current in the coil 5.
  • a quartz plate 11 Situated within the chamber 1 is a quartz plate 11 the function of which is to prevent electrons from impinging on those parts of the wall 2 of the chamber 1 to which the solenoidal magnetic field 8 does not reach.
  • a metal plate 12 defines an exit hole for ions produced by the source, and also acts as an extraction electrode.
  • the wall 2 of the chamber 1 becomes heated to a temperature of several hundred degrees centigrade as a result of bombardment by the consituents of the plasma within the chamber 1.
  • the operating temperature of the wall 2 of the chamber 1 is not critical but does have an optimum value which depends on the material of the plasma in the chamber 1. For example, if the gaseous material is oxygen at a pressure of about 0.7 m Torr, then a wall temperature of about 600°C is appropriate. If necessary, external heating or cooling means can be provided. In the drawings cooling coils 13 are shown.
  • Figure 2 shows a second embodiment of the invention in which the magnetic field 8 is provided by a number of magnets 21 and is multipolar in form.
  • the ion source operates in the same way as the first embodiment and therefore will not be described further.
  • Those components which are common to both embodiments have the same reference numerals.
  • the port 4 can be connected to a furnace in which the material can be vapourised.
  • an ion beam generator embodying the present invention consists of a vacuum chamber 30 which has two ports 32 and 33 through which it can be evacuated. One end of the vacuum chamber 30 is bolted to a base plate 25 which has a central hole 26 in it through which an ion beam 27 can enter the vacuum chamber 1.
  • the electromagnet assembly 28 Positioned in the path of the ion beam 27 is an electromagnet assembly 28.
  • the electromagnet assembly 28 provides a first magnetic field 29' which is directed out of the plane of the paper on which the figure is drawn, and a second magnetic field 29'' directed in the opposite direction.
  • the electromagnet assembly 28 has a core 31 which is in the form of a complete loop which is cut to provide two pairs of pole pieces 34 and 35. Appropriately connected pairs of coils 14 and 15, respectively, are wound upon the pairs of pole pieces 34 and 35.
  • the pair of pole pieces 35 carries a number of water-cooled plates 16 which are so positioned as to intercept those components of the ion beam 27 which have mass-charge ratios other than that of the singly ionised monatomic species the magnetic analyser is intended to produce.
  • the pair of pole pieces 35 also carry a structure 17 which defines an exit slit 18.
  • the plates 16 and the structure 17 are water-cooled.
  • Mounted on the vacuum chamber 30 opposite the incoming ion beam 27 is a beam dump 19 which is arranged to intercept and absorb the energy of the ion beam 27 in the absence of any magnetic fields being produced by the electromagnet assembly 28.
  • the ion beam 27 is produced by an ancilliary assembly 20 attached to the vacuum chamber 30.
  • the assembly 20 includes a radio-frequency plasma ion source 21 as described with reference to Figs 1 and 2.
  • Associated with the plasma ion source 21 are three grid holders and extraction electrodes 22 which between them define a series of parallel recangular cross-section beamlets which together make up the ion beam 27.
  • the longer axes of the beamlets are aligned parallel with the magnetic fields 29' and 29".
  • the magnetic field 29' diverts the beam 27 to its right as shown, and separates it into its constituent ions having differing mass-charge ratios in the normal way. Ions having considerably different mass-charge ratios impinge on, and are absorbed by, the plates 16. Ions having a relatively small spread in mass-charge ratio centred on the desired value are deflected in the opposite direction by the second matgnetic field 29 11 and are brought to foci at the structure 17.
  • the slit 18 allows only those ions having the exact mass-charge ratio desired to pass through and emerge as a sharply-diverging beam 23 of rectangular cross-section of the desired ion species. All the other ions are intercepted by the structure 17, which also is water-cooled.
  • the emerging ion beam 23 may show some residual structure arising from the beamlets. If this is so, and its effects are judged to be undesirable, then this can be reduced, or removed by a number of methods, for example:

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
EP85305339A 1984-07-26 1985-07-26 Source d'ions Withdrawn EP0169744A3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB8419039 1984-07-26
GB8419070 1984-07-26
GB848419070A GB8419070D0 (en) 1984-07-26 1984-07-26 Magnetic analyser
GB848419039A GB8419039D0 (en) 1984-07-26 1984-07-26 Ion source

Publications (2)

Publication Number Publication Date
EP0169744A2 true EP0169744A2 (fr) 1986-01-29
EP0169744A3 EP0169744A3 (fr) 1987-06-10

Family

ID=26288028

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85305339A Withdrawn EP0169744A3 (fr) 1984-07-26 1985-07-26 Source d'ions

Country Status (2)

Country Link
EP (1) EP0169744A3 (fr)
GB (1) GB2162365B (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3632340A1 (de) * 1986-09-24 1988-03-31 Leybold Heraeus Gmbh & Co Kg Induktiv angeregte ionenquelle
EP0249658A3 (en) * 1986-06-16 1988-11-17 Hitachi, Ltd. Ion source device
GB2235086A (en) * 1989-06-01 1991-02-20 Ion Tech Ltd Ion beam source
WO2009135471A1 (fr) * 2008-05-05 2009-11-12 Astrium Gmbh Générateur de plasma et procédé de commande d'un générateur de plasma

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KR920003562B1 (ko) * 1986-03-31 1992-05-04 가부시끼가이샤 도시바 내마모성 표면층을 형성한 비철금속의 기계부품
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
KR100489918B1 (ko) 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6023038A (en) 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
DE10058326C1 (de) * 2000-11-24 2002-06-13 Astrium Gmbh Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302026A (en) * 1963-07-25 1967-01-31 Exxon Production Research Co Ion source neutron generator having magnetically stabilized plasma
GB1399603A (en) * 1971-09-07 1975-07-02 Boswell R W Christiansen P J N Ion sources
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
FR2475798A1 (fr) * 1980-02-13 1981-08-14 Commissariat Energie Atomique Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
JPS6043620B2 (ja) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 マイクロ波イオン源

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0249658A3 (en) * 1986-06-16 1988-11-17 Hitachi, Ltd. Ion source device
US4847476A (en) * 1986-06-16 1989-07-11 Hitachi, Ltd. Ion source device
DE3632340A1 (de) * 1986-09-24 1988-03-31 Leybold Heraeus Gmbh & Co Kg Induktiv angeregte ionenquelle
US4849675A (en) * 1986-09-24 1989-07-18 Leybold Ag Inductively excited ion source
EP0261338A3 (en) * 1986-09-24 1989-07-26 Leybold Aktiengesellschaft Inductively excited ion source
DE3632340C2 (de) * 1986-09-24 1998-01-15 Leybold Ag Induktiv angeregte Ionenquelle
GB2235086A (en) * 1989-06-01 1991-02-20 Ion Tech Ltd Ion beam source
WO2009135471A1 (fr) * 2008-05-05 2009-11-12 Astrium Gmbh Générateur de plasma et procédé de commande d'un générateur de plasma
KR101360684B1 (ko) * 2008-05-05 2014-02-07 아스트리움 게엠베하 플라스마 발생기 및 상기 플라스마 발생기를 제어하기 위한 방법
US8786192B2 (en) 2008-05-05 2014-07-22 Astrium Gmbh Plasma generator and method for controlling a plasma generator
RU2525442C2 (ru) * 2008-05-05 2014-08-10 Астриум Гмбх Плазменный генератор и способ управления им
DE102008022181B4 (de) * 2008-05-05 2019-05-02 Arianegroup Gmbh Ionentriebwerk

Also Published As

Publication number Publication date
GB2162365B (en) 1989-06-01
GB2162365A (en) 1986-01-29
GB8518922D0 (en) 1985-09-04
EP0169744A3 (fr) 1987-06-10

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Inventor name: GREEN, THOMAS STANLEY

Inventor name: INMAN, MICHAEL