EP0182836B1 - Composition dielectrique - Google Patents
Composition dielectrique Download PDFInfo
- Publication number
- EP0182836B1 EP0182836B1 EP85902534A EP85902534A EP0182836B1 EP 0182836 B1 EP0182836 B1 EP 0182836B1 EP 85902534 A EP85902534 A EP 85902534A EP 85902534 A EP85902534 A EP 85902534A EP 0182836 B1 EP0182836 B1 EP 0182836B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- active substance
- dielectric
- weight
- printed
- screen printing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000013543 active substance Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 14
- 238000007650 screen-printing Methods 0.000 claims description 14
- 239000011572 manganese Substances 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- -1 C0 2+ Chemical compound 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 239000010955 niobium Substances 0.000 description 10
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Chemical group 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Chemical group 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Definitions
- the invention relates to the field of electrical engineering / electronics, especially microelectronics, and relates to a dielectric composition which can be used in particular in thick-film technology for the production of printed capacitors by means of screen printing processes.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Glass Compositions (AREA)
- Conductive Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Composition diélectrique qui s'utilise essentiellement en technique des couches épaisses lors de la préparation de condensateurs imprimés au moyen d'un procédé de sérigraphie. La composition contient en tant que substance d'action diélectrique l'un des composés de formule (I); en cette formule doit se réaliser a(2-x) + 5x = 8; de plus, le symbole A désigne un ou plusieurs cations du groupe Mg2+, Ni2+, Zn2+, Co2+, Ca2+, Sn2+, Mn2+, Co3+, Mn3+, Al;3+ et Cr3+.
Claims (10)
1. Substance active diélectrique pour la fabrication d'éléments diélectriques fermés sur eux-mêmes, caractérisée en ce qu'elle cbnsiste en Bi2[A+a 2-xNbx]O7, a et x satisfaisant à la condition a(2 - x) + 5x = 8 et A représentant un ou plusieurs ions métalliques du groupe formé par Mg+2, Ni+2, Zn+2, Co+2, Ca+2, Sn+2, Mn+2, Co+3, Mn+3, AI+3 et Cr+3.
2. Substance active selon la revendication 1, caractérisée en ce qu'elle consiste en Bi2[Mg2/3Nb4/3]O7 ou Bi2[Zn2/3Nb4/3]O7 ou Bi2[AlNb]O7 ou en un mélange de ces composés.
3. Pâte diélectrique apte à l'impression par sérigraphie, pour la fabrication d'éléments diélectriques fermés sur eux-mêmes, contenant, dans un liant, une substance active diélectrique, caractérisée en ce que la substance active consiste en Bi2[A+a 2-xNbx]O7, a et x satisfaisant à la condition a(2 - x) + 5x = 8 et A représentant un ou plusieurs ions métalliques du groupe formé par Mg+2, Ni+2, Zn+2, Co+2, Ca+2, Sn+2, Mn+2, Co+3, Mn+3, AI+3 et Cr+3, en ce que cette substance est contenue dans le liant en quantité allant jusqu'à 83 % en poids et en ce que la pâte contient en outre, au dépens de la quantité de substance active, 0 à 3 % en poids de manganèse et 0 à 20 % en poids d'un verre à bas point de fusion, ayant un point de ramollissement inférieur à 900 °C.
4. Pâte selon la revendication 3, caractérisée en ce que le verre à bas point de fusion consiste en PbSiO3 ou PbO-B203-Si02 ou Zn-B203-Si02 ou Pb-Al2O3-SiO2 ou en un mélange de ces oxydes.
5. Condensateur consistant en une première couche conductrice de l'électricité, appliquée en impression par sérigraphie sur un support isolant électrique, une ou plusieurs pellicules diélectriques imprimées en superposition par sérigraphie sur la couche conductrice et une deuxième couche conductrice de l'électricité imprimée sur la pellicule ou l'ensemble de pellicules diélectriques par sérigraphie, caractérisé en ce que les pellicules diélectriques consistent pour 77 à 100 % en poids en une substance active diélectrique consistant elle-même en Bi2[A+a 2-xNbx]O7, a et x satisfaisant à la condition a(2 - x) + 5x = 8 et A représentant un ou plusieurs ions métalliques du groupe formé par Mg+2, Ni+2, Zn+2, Co+2, Ca+2, Sn+2, Mn+2, Co+3, Mn+3, AI+3 et Cr+3, et en ce que les pellicules diélectriques contiennent de 0 à 3 % en poids de manganèse et 0 à 20 % en poids d'un verre à bas point de fusion, ayant un point de ramollissement inférieur à 900 °C.
6. Condensateur selon la revendication 5, caractérisé en ce que la substance active consiste en Bi2[Mg2/3Nb4/3]O7 ou Bi2[Zn2/3Nb4/3]O7 ou Bi2[AINb]07 ou en un mélange de ces oxydes.
7. Condensateur consistant en une première pellicule diélectrique imprimée par sérigraphie sur un support isolant de l'électricité, une première couche conductrice de l'électricité appliquée par sérigraphie sur cette pellicule, une ou plusieurs autres pellicules diélectriques imprimées en superposition par sérigraphie sur cette couche et une deuxième couche conductrice imprimée par sérigraphie sur cette pellicule ou cet ensemble de pellicules, caractérisé en ce que les pellicules diélectriques consistent pour 77 à 100 % en poids en une substance active diélectrique consistant elle-même en Bi2[A+a 2-xNbx]O7, a et x satisfaisant à la relation a(2 - x) + 5x = 8 et A représentant un ou plusieurs ions métalliques du groupe formé par Mg+2, Ni+2, Zn+2, Co+2, Ca+2, Sn+2, Mn+2, Co+3, Mn+3, AI+3 et Cr+3 et en ce que les pellicules diélectriques contiennent de 0 à 3 % en poids de manganèse et 0 à 20 % en poids d'un verre à bas point de fusion, ayant un point de ramollissement inférieur à 900 °C.
8. Condensateur selon la revendication 7, caractérisé en ce que la substance active consiste en Bi2[Mg2/3Nb4/3]O7 ou Bi2[Zn2/3Nb4/3]O7 ou Bi2[AlNb]O7 ou en un mélange de ces oxydes.
9. Disposition de condensateurs à couches multiples consistant en condensateurs individuels imprimés les uns sur les autres par sérigraphie et branchés électriquement en parallèle, la disposition de condensateurs consistant en plus de deux couches conductrices de l'électricité et plusieurs pellicules diélectriques, caractérisée en ce que les pellicules diélectriques consistent pour 77 à 100 % en poids en une substance active diélectrique consistant elle-même en Bi2[A+a 2-xNbx]O7, a et x satisfaisant à la relation a(2 - x) + 5x = 8 et A représentant un ou plusieurs ions métalliques du groupe formé par Mg+2, Ni+2, Zn+2, Co+2, Ca+2, Sn+2, Mn+2, Co+3, Mn+3, AI+3 et Cr+3, et en ce que les pellicules diélectriques contiennent de 0 à 3 % en poids de manganèse et de 0 à 20 % en poids d'un verre à bas point de fusion, ayant un point de ramollissement inférieur à 900 °C.
10. Disposition de condensateurs à couches multiples selon la revendication 9, caractérisée en ce que la substance active consiste en Bi2[Mg2/3Nb4/3]O7 ou Bi2[Zn2/3Nb4/3]O7 ou Bi2[AlNb]O7 ou en un mélange de ces oxydes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD263436 | 1984-05-28 | ||
| DD84263436A DD251851A1 (de) | 1984-05-28 | 1984-05-28 | Paste fuer die herstellung gedruckter kondensatoren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0182836A1 EP0182836A1 (fr) | 1986-06-04 |
| EP0182836B1 true EP0182836B1 (fr) | 1989-07-19 |
Family
ID=5557365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP85902534A Expired EP0182836B1 (fr) | 1984-05-28 | 1985-05-23 | Composition dielectrique |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4728562A (fr) |
| EP (1) | EP0182836B1 (fr) |
| JP (1) | JPS61502255A (fr) |
| DD (1) | DD251851A1 (fr) |
| DE (1) | DE3571714D1 (fr) |
| WO (1) | WO1985005729A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5219642A (en) * | 1989-06-09 | 1993-06-15 | Imperial Chemical Industries Plc | Fibre reinforced stuctural thermoplastic composite materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3847829A (en) * | 1973-08-10 | 1974-11-12 | Du Pont | Crystalline bismuth-containing oxides |
| US3977887A (en) * | 1974-03-08 | 1976-08-31 | International Business Machines Corporation | High dielectric constant ceramics which can be sintered at low temperatures |
| GB1521137A (en) * | 1974-11-07 | 1978-08-16 | Tdk Electronics Co Ltd | Ceramic dielectric composition |
| JPS51101900A (fr) * | 1975-03-05 | 1976-09-08 | Tdk Electronics Co Ltd | |
| US4047214A (en) * | 1975-09-04 | 1977-09-06 | Westinghouse Electric Corporation | Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same |
-
1984
- 1984-05-28 DD DD84263436A patent/DD251851A1/de not_active IP Right Cessation
-
1985
- 1985-05-23 DE DE8585902534T patent/DE3571714D1/de not_active Expired
- 1985-05-23 EP EP85902534A patent/EP0182836B1/fr not_active Expired
- 1985-05-23 JP JP60502390A patent/JPS61502255A/ja active Pending
- 1985-05-23 WO PCT/EP1985/000248 patent/WO1985005729A1/fr not_active Ceased
- 1985-05-24 US US06/738,022 patent/US4728562A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1985005729A1 (fr) | 1985-12-19 |
| US4728562A (en) | 1988-03-01 |
| EP0182836A1 (fr) | 1986-06-04 |
| DD251851A1 (de) | 1987-11-25 |
| JPS61502255A (ja) | 1986-10-09 |
| DE3571714D1 (en) | 1989-08-24 |
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