EP0186533A1 - Dynamisches Speicherelement und seine Verwendung in einer Master-Slave-Kippschaltung und in programmierbaren sequentiellen Schaltungen - Google Patents

Dynamisches Speicherelement und seine Verwendung in einer Master-Slave-Kippschaltung und in programmierbaren sequentiellen Schaltungen Download PDF

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Publication number
EP0186533A1
EP0186533A1 EP85402179A EP85402179A EP0186533A1 EP 0186533 A1 EP0186533 A1 EP 0186533A1 EP 85402179 A EP85402179 A EP 85402179A EP 85402179 A EP85402179 A EP 85402179A EP 0186533 A1 EP0186533 A1 EP 0186533A1
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EP
European Patent Office
Prior art keywords
master
flip
output
flop
transistor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85402179A
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English (en)
French (fr)
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EP0186533B1 (de
Inventor
Ngu Tung Pham
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Thales SA
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Thomson CSF SA
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Publication of EP0186533B1 publication Critical patent/EP0186533B1/de
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3562—Bistable circuits of the primary-secondary type

Definitions

  • the present invention relates to a dynamic memory element, consisting of a field effect transistor provided with two gates, one of which is used to supply the transistor, the drain of which is isolated and the source of which is grounded.
  • the transistor of the memory element according to the invention is of the normally blocked type, known by the English name "normally-off", and with a positive threshold voltage.
  • the invention also relates to the circuits which implement this memory element, in particular a dynamic master-slave flip-flop and dividers, with fixed or programmable rank.
  • the invention is mainly oriented towards fast transistors, made of group III-V materials, such as GaAs or other more complex ternary or quaternary compounds, it also applies to silicon field effect transistors.
  • the memory element according to the invention consists of a single bigrille field effect transistor.
  • the source of this transistor is mounted to ground, and the drain, which constitutes the output of the memory point, is isolated, that is to say that in practice it is connected to a capacitive load such as the grid.
  • Another transistor The first gate, that which is on the pellet of the transistor near the source, constitutes the entry of the memory point.
  • the second gate, that which is located near the drain, is connected to a clock whose signals, 0 and 1 logic, further constitute the supply of the transistor.
  • the grids are Schottky grids which therefore have a diode effect in one direction and a current leakage effect.
  • this transistor is not supplied, as is conventional, by its drain, but that it is supplied by its second gate, appropriate sequences of logic signals on the two gates allow the transistor to be charged and then the charge to be stored, since the drain is isolated, and finally to restore this charge in the form of a pulse in an external circuit.
  • This isolated drain transistor therefore constitutes a memory point.
  • FIG. 1 represents the diagram of the dynamic memory point according to the invention: this memory point consists of a single transistor which behaves in dynamic flip-flop.
  • this transistor is not supplied by a voltage or current source which would be, as is the most frequent case, connected to the drain 11. It is the clock signal H which serves as a supply to the transistor, and all the operation of the flip-flop is based on the good insulation of the drain 11.
  • the transistor returns to the state of the first sequence.
  • the flip-flop according to the invention requires a transistor with positive threshold voltage, to ensure effective blocking.
  • circuits whose description follows constitute examples of application of the flip-flop or memory point of the invention.
  • FIG. 2 is a first application case, which is a dynamic master-slave rocker.
  • the master flip-flop is composed of two bigrille transistors 2 and 3, mounted in parallel: the two sources 20 of the two transistors are connected to ground, and the two drains 21, together, constitute the output of this master flip-flop.
  • the first gate 22 of transistor 2 constitutes the input of the flip-flop, and the second gate 23 of this same transistor is connected to a clock which supplies it with a signal H 1 .
  • the first gate 24 of transistor 3 constitutes the reset input to 1 or to 0 (SET-RESET) and the second gate 25 of this same transistor corresponds to the writing mode, which will be explained later.
  • the slave flip-flop consists of a single bigrille transistor 4, the source 26 of which is connected to ground, the drain 27 forms the output of the master-slave flip-flop, the first gate 28 receives the signals from the output 21 of the master flip-flop 2 + 3, and the second gate 29 is connected to a clock which supplies it with a signal H 2 ' always in phase opposition with respect to the signal H 1 .
  • the first grid (22, 24, 28) is that which is close to the source
  • the second gate (23, 25, 29) is that which is close to the drain, for a transistor considered.
  • Each of the three transistors 2, 3 and 4 of this master-slave flip-flop conforms to the transistor forming a dynamic flip-flop according to the invention and described in FIG. 1.
  • the clock signals H 1 and H 2 are generated by three direct coupling inverters of the DCFL type, or "Direct Coupled FET Logic".
  • These inverters are the simplest to make, therefore the most suitable for large-scale integration: each includes a field effect transistor whose source is connected to ground and whose drain is supplied from a voltage V DD through a load resistor.
  • the grid constitutes the inlet of the inverter, the drain of which is the outlet.
  • This type of inverter is produced with normally blocked or normally-off transistors, that is to say the same kind of transistors as those used in the invention, which promotes integration.
  • the three inverters I 1 , I 2 and I 3 are connected in series / parallel, that is to say that the first two I 1 and I 2 are attacked in parallel by the same master clock signal H 0 .
  • the output of the inverter I 1 taken between the drain and the supply load, constitutes the clock signal H l which controls the transistor 2 of the master flip-flop.
  • the last two inverters I 2 and I 3 are connected in series: the output of the inverter I 2 attacks the inverter I 3 , the output of which constitutes the clock signal H 2 which controls the transistor 4 of the slave flip-flop .
  • the input on the first gate 24 is used for the operations of parallel inputs (cn 22 and 24) - serial outputs (at 21) depending on the writing mode imposed by the second grid 25.
  • the input of the write mode 25 is set to 0.
  • the master flip-flop is in this case independent of the input 24, and the master-slave assembly operates in shift register, according to the following sequence table:
  • the sign X in the first sequence means that the output 27 of the master-slave controller retains its previous state, which was either 1 or 0.
  • the sequence 7 brings back to the sequence 1, with the state of the exit 27 near, which was indeterminate.
  • a first sequence table groups columns 22, 23 and 21, and corresponds to the sequence table which has been exposed to the occassion of the dynamic flip-flop of FIG. 1: it is the sequence table of transistor 2 considered in isolation.
  • a second sequence table brings together columns 28, 29 and 27, the input column 28 being the same as the output column 21: this is the table of sequences of transistor 4 considered in isolation.
  • the input 22 on the first gate is used for the operation of series inputs - series outputs.
  • the parallel inputs are made on the first gates 22 and 24 of the two transistors 2 and 3 of the master flip-flop, and the clock H O is blocked on a logic high level 1.
  • the flip-flop can write the values entered on the first gate 24 of the transistors 3.
  • Each entry at E comes out at 0 with a shift of a period T from the clock H 0 because H 1 and H 2 are out of phase. State of output 0 remains independent of the state of input E as long as the clock does not advance.
  • FIG. 4 represents a frequency divider by 2, using the shift register of the invention, symbolized in FIG. 3.
  • This frequency divider by 2 comprises a shift register according to the invention, whose output 0 (drain 27 of the slave flip-flop 4) is looped back to the input E (first gate 22 of the master flip-flop 2) via of an inverter I 1 .
  • the inverter It is of the DCFL direct coupling type.
  • the output signal S is taken from the intermediate output M (21 + 28) by means of a second inverter I 2 , also of the DCFL type, which serves as a buffer or buffcr. Taking the output signal from the intermediate output M makes it possible to balance the switching times: in fact, the switching times t phl and t plh of the master and slave flip-flops are proportional to the capacities involved, therefore to the number of gates of transistors.
  • the write mode selection input W is set to level 0
  • the divider is independent of input D: the transistor 3 of the master flip-flop does not intervene.
  • the transfer by clock half-period H 0 is that of a single-stage gate for the master flip-flop, which only includes transistor 2, and that of a two-stage gate for the slave rocker, because it includes the inverter Il.
  • the output of the divider is taken from the intermediate output M (21-28) of the master rocker in order to balance the times.
  • the maximum frequency of this frequency divider is approximately: t o being the switching time of a DCFL inverter with a fanout of 1.
  • T o 15 psec per inverter and therefore achieve a frequency divider operating up to 15 GHz.
  • the divider by 2 which has just been described does not use the transistor 3 of the flip-flop maitrc: the input D (24) does not intervene, and the input W (25) is kept at ground, at 0 logic.
  • the input D (24) does not intervene
  • the input W (25) is kept at ground, at 0 logic.
  • frequency dividers or programmable pulse generators can be implemented.
  • FIG. 5 gives the diagram, in symbolic form, of a programmable circuit. This includes 4 master-slave flip-flops, according to the symbol in FIG. 3, but the number of associated flip-flops is in no way limitative of the invention, and could be different without departing from the scope of the invention. For this type of programmable circuit, it is not necessary to bring out the intermediate output M (21 + 28) for each master-slave flip-flop.
  • the programmable circuit comprises 4 master-escalator flip-flops B 1 , g 2 , B 3 ' B 4 connected in series: the output O n-1 of one attacks the input En of the next.
  • the clock inputs H 0 are all controlled by a clock generator signal T, through an AND-NON N gate which inhibits the signal T o when writing with the write selection signal W o . This is addressed, respectively, to the four inputs W 1 to W 4 through four inverters I 1 to I 4 , for each flip-flop.
  • the output 0 4 of the last flip-flop B 4 is looped back to the input E 1 of the first flip-flops B 1 .
  • the inputs D 1 to D 4 can write logic values 0 or 1 in flip-flops B 1 to B 4 when W o is at logic low level 0.
  • W o is at the logic high level 1
  • W to W 4 are at the logic low level 0.
  • the transistors 3 of each flip-flop are blocked, therefore the inputs D 1 to D 4 (first gate of each transistor 3) are isolated, and the clock signals are transmitted to the flip-flops by T o through the gate N AND-NO.
  • the output signal S of the programmable circuit is taken from an inverter 15 mounted at the output of the last flip-flop.
  • this programmable circuit applies the permutation rule step by step, and the result depends on the program selected.
  • permutation rule step by step the permutation rule step by step
  • the arrows highlight the permutation, at each step.
  • the fifth step is identical to the first step, and brings back to the initial program.
  • This program transforms the programmable circuit into a high level pulse generator, whose period is equal to 4 clock steps.
  • the programmable circuit is a low level pulse generator, with a period equal to 4 clock steps.
  • the programmable circuit is a frequency divider by 4, which gives signals in time slots of 2 steps per clock.
  • the programmable circuit is a frequency divider by 2.
  • Another advantage lies in the simplicity of the memory point which is nothing more than a single big-field field effect transistor, normally blocked, as well as in the simplicity of the circuits which are associated with it, DCFL inverters with a single transistor normally blocked.
  • TEGFET type transistors made of group III-V materials such as GaAs and AIGaAs, makes it possible to manufacture extremely fast circuits, including frequency dividers, in integrated circuits, operating up to 15 GHz.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
EP19850402179 1984-11-16 1985-11-12 Dynamisches Speicherelement und seine Verwendung in einer Master-Slave-Kippschaltung und in programmierbaren sequentiellen Schaltungen Expired EP0186533B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8417557A FR2573561B1 (fr) 1984-11-16 1984-11-16 Element de memoire dynamique, bascule maitre-esclave et circuits sequentiels programmables utilisant cet element de memoire dynamique
FR8417557 1984-11-16

Publications (2)

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EP0186533A1 true EP0186533A1 (de) 1986-07-02
EP0186533B1 EP0186533B1 (de) 1989-05-24

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EP19850402179 Expired EP0186533B1 (de) 1984-11-16 1985-11-12 Dynamisches Speicherelement und seine Verwendung in einer Master-Slave-Kippschaltung und in programmierbaren sequentiellen Schaltungen

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EP (1) EP0186533B1 (de)
DE (1) DE3570547D1 (de)
FR (1) FR2573561B1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0237414B1 (de) * 1986-03-07 1991-04-17 Thomson-Csf Elementarer Binärzähler, synchroner Binärzähler und Frequenzteiler unter Verwendung des elementaren Binärzählers
FR2736746A1 (fr) * 1995-07-13 1997-01-17 Sgs Thomson Microelectronics Circuit de memorisation d'etats
WO2004036588A1 (fr) * 2002-10-21 2004-04-29 Victor Nikolaevich Mourachev Dispositif fonctionnel dynamique sequentiel
WO2006132560A1 (fr) * 2005-06-06 2006-12-14 Victor Nikolaevich Mourachev Dispositif fonctionnel dynamique seriel
RU2392672C2 (ru) * 2005-06-06 2010-06-20 Виктор Николаевич Мурашев Динамическое последовательное функциональное устройство

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395291A (en) * 1965-09-07 1968-07-30 Gen Micro Electronics Inc Circuit employing a transistor as a load element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534348A (en) * 1978-08-31 1980-03-10 Fujitsu Ltd Semiconductor memory device
JPS5895870A (ja) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp シヨツトキバリア形電界効果トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395291A (en) * 1965-09-07 1968-07-30 Gen Micro Electronics Inc Circuit employing a transistor as a load element

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
1981 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 1981, pages 362-364, IEEE, New York, US; R.E. LUNDGREN et al.: "A high-speed monolithic GaAs 10/11 counter" *
IEE PROCEEDINGS, vol. 127, partie I, no. 2, avril 1980, pages 98-99; J. MUN et al.: "GaAs diode/f.e.t. logic circuits for high-speed-frequency-divider applications" *
MICROELECTRONICS JOURNAL, vol. 8, no. 4, juin 1978, pages 5-9, Mackintosh Publications Ltd., Luton, GB; H.L. HARTNAGEL: "New gallium arsenide oxidation technique for microwave integrated circuits" *
PATENTS ABSTRACTS OF JAPAN, vol. 4, no. 66 (P-11) [548], 11 mai 1980, page 94 P 11; & JP - A - 55 34 348 (FUJITSU K.K.) 10.03.1980 *
PATENTS ABSTRACTS OF JAPAN, vol. 7, no. 194 (E 195) [1339], 24 août 1983, page 87 E 195; & JP - A - 58 95 870 (MITSUBISHI DENKI K.K.) 07.06.1983 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0237414B1 (de) * 1986-03-07 1991-04-17 Thomson-Csf Elementarer Binärzähler, synchroner Binärzähler und Frequenzteiler unter Verwendung des elementaren Binärzählers
FR2736746A1 (fr) * 1995-07-13 1997-01-17 Sgs Thomson Microelectronics Circuit de memorisation d'etats
WO2004036588A1 (fr) * 2002-10-21 2004-04-29 Victor Nikolaevich Mourachev Dispositif fonctionnel dynamique sequentiel
WO2006132560A1 (fr) * 2005-06-06 2006-12-14 Victor Nikolaevich Mourachev Dispositif fonctionnel dynamique seriel
RU2392672C2 (ru) * 2005-06-06 2010-06-20 Виктор Николаевич Мурашев Динамическое последовательное функциональное устройство

Also Published As

Publication number Publication date
EP0186533B1 (de) 1989-05-24
FR2573561A1 (fr) 1986-05-23
FR2573561B1 (fr) 1989-06-16
DE3570547D1 (en) 1989-06-29

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