EP0189087A1 - Résistance électrique dépendant de la tension (varistance) - Google Patents

Résistance électrique dépendant de la tension (varistance) Download PDF

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Publication number
EP0189087A1
EP0189087A1 EP86100376A EP86100376A EP0189087A1 EP 0189087 A1 EP0189087 A1 EP 0189087A1 EP 86100376 A EP86100376 A EP 86100376A EP 86100376 A EP86100376 A EP 86100376A EP 0189087 A1 EP0189087 A1 EP 0189087A1
Authority
EP
European Patent Office
Prior art keywords
varistor
layers
voltage
electrical resistance
varistor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86100376A
Other languages
German (de)
English (en)
Other versions
EP0189087B1 (fr
Inventor
Günter Dipl.-Ing. Ott
Franz Dr. Zettl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Bauelemente OHG
Siemens AG
Siemens Corp
Original Assignee
Siemens Bauelemente OHG
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Bauelemente OHG, Siemens AG, Siemens Corp filed Critical Siemens Bauelemente OHG
Priority to AT86100376T priority Critical patent/ATE35344T1/de
Publication of EP0189087A1 publication Critical patent/EP0189087A1/fr
Application granted granted Critical
Publication of EP0189087B1 publication Critical patent/EP0189087B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006—Thick film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type

Definitions

  • the invention relates to a voltage-dependent electrical resistance (varistor) consisting of a ceramic, monolithic body made of a plurality of layers of 20 to 350 ⁇ m thick made of varistor material with grain sizes of 7 to 20 ⁇ m based on zinc oxide (Zn0) with up to 6 mol%. with additions of oxides of one or more of the metals Bi, Sb, Co, Ni, Cr, Mn, Mg, B, Al, Ba and as a coating serving, at most 10 ⁇ m thick noble metal layers that alternate with the varistor material layers and alternate to different locations of the Lateral surfaces of the body guided and there are electrically conductive and contacted with other metal layers.
  • a voltage-dependent electrical resistance consisting of a ceramic, monolithic body made of a plurality of layers of 20 to 350 ⁇ m thick made of varistor material with grain sizes of 7 to 20 ⁇ m based on zinc oxide (Zn0) with up to 6 mol%. with additions of oxides of one or more of the metals Bi, Sb,
  • Such a varistor is described in the publication "Advances in Ceramics” (American Ceram. Society, Columbus) 1981, Vol. 1, pages 349 to 358.
  • the average grain size is given there as 10 ⁇ m.
  • the response voltage per grain boundary is 2 to 3 V.
  • the data for the thickness of the varistor material layers are 20 to 200 ⁇ m, the properties being measured on varistors with a layer thickness of 40 ⁇ m or 150 ⁇ m with 20 layers stacked one above the other.
  • the non-linearity coefficient ⁇ is given as 20 to 30, while the varistor voltage, measured at 1 mA, is given as 4 to 40 volts.
  • Fired-in silver electrodes are specified as metal layers for contacting the coatings arranged alternately in the monolithic body on its surface. There is no further information about the material of the linings inside the monolithic body. There is also no information about the porosity of the material.
  • the voltage that is measured at 1 mA is defined as the varistor voltage on page 52.
  • the varistor voltage is used to classify varistors.
  • Varistors for low voltages so-called low-voltage varistors, which are manufactured using conventional technology, have grain sizes of approximately 100 .mu.m and even larger in order to keep the number of grain boundaries between the coatings low.
  • a coarsely crystallizing material leads to the problem that the grain size distribution scatters strongly and thus the steepness of the I-U characteristic (non-linearity coefficient a) drops sharply.
  • Low-voltage varistors manufactured in this way cannot generally be used to protect against higher voltages because the heat generated in the ceramic body cannot be dissipated.
  • the present invention has for its object to improve a voltage-dependent electrical resistance (varistor) of the type mentioned in that the range of the varistor voltage is expanded so that in this way and from the same material, varistors with different varistor voltages can be produced that the The amount of the palladium usually used for such components is reduced and, last but not least, improved heat dissipation results.
  • varistor voltage-dependent electrical resistance
  • the low porosity which should preferably be less than 1%, ensures that the metal of the internal electrodes cannot penetrate into pores, as a result of which a shortened electrode path is created, which leads to an early flashover (short circuit) in the event of impulse loading.
  • the reduction in the bismuth content from usually more than 2 mol% to at most 1 mol% and preferably 0.6 mol% has the effect that on the one hand the grain growth is reduced and thus the grain size distribution is evened out, and on the other hand that the reaction of the coatings with the ceramic material in the Sintering temperature is avoided, which avoids alloying of the palladium with the consequence of the island formation of the deposits.
  • the toppings preferably consist of 70% by weight of silver and 30% by weight of palladium.
  • the ceramic body consists of varistor material layers, the thickness of which is in the range from 35 ⁇ m to 350 ⁇ m, with thicker layers resulting in higher varistor voltages in the range from 4 volts to 350 volts.
  • the low bismuth content enables sintering temperatures of up to 1,150 ° C, which means that thin layers and a corresponding number of layers can be used to produce varistors with a varistor voltage down to 4 V.
  • varistors are manufactured using multilayer technology in the same way as is known, for example, for multilayer ceramic capacitors.
  • organic binder materials e.g. polymethylacrylates, methyl cellulose, polyvinyl alcohol
  • solvents e.g. water, ethyl methyl ketone
  • plasticizers phthalates, esters
  • a sample of the inner coverings made from the specified silver-palladium compound is applied to pieces of approximately the size of postcards onto the foils thus produced, after which a corresponding number of such postcard-sized foils are stacked on top of one another in such a way that the alternating displacement of the coverings in the finished product Body results.
  • the layer varistor is separated from the stack in its raw form and - after passing through a tempering and binder burnout cycle customary in multilayer technology - sintered at temperatures up to 1150 ° C.
  • the varistor body 1 is shown schematically, which consists of layers 2 of varistor material.
  • the coverings 3 and 4 alternate with varistor material layers 2, the coverings 3 in the present case being guided to the right outer surface 5 and the coverings 4 to the left outer surface 6 of the ceramic body.
  • the ceramic body 1 consists of a monolithic block, in the interior of which the coatings 3 and 4 are arranged. It is also possible that the pads 3 and 4 protrude on the same side of the monolithic block, where at the ends to be contacted then end alternately at different points in this surface side and are contacted there with opposite poles.
  • opposite-pole means that the coatings 3 on the surface 5 with a further metal layer 7, e.g. made of silver or another solderable metal, which is connected to a pole of the voltage source or the circuit, while the coatings 4 on the surface side 6 by the further metal layer 8, also made of silver or the like, connected to each other The opposite pole of the voltage source or the circuit is connected.
  • Reference number 9 denotes the thickness of the layers 2 made of varistor material.
  • a prerequisite for the operation of the varistor is that the distances 10 and 11 between the top layer 3 and the bottom layer 4 and the surface 14 or the surface 15 and the distances 12 of the layers 3 to the metal layer 8 and the distances 13 of the metal layers 4 to the metal layer 7 are each greater than the thickness 9 of the layers 2 made of varistor material.
  • the varistor according to the invention can be provided with power supply wires 18 and 19, which are soldered to the metal layers 7 or 8 or attached in some other way.
  • the varistor according to the invention is to be used as a chip by placing it on and attaching it to contact points on printed conductor tracks, then instead of the power supply wires there can be contact surfaces which, in the present example, through the extensions 20 and 21 of the metal layer 7 on the surfaces 14 and 15, and are represented by extensions 22 and 23 of the metal layer 8 on the surfaces 14 and 15.
  • the grid spacing 24 between the power supply wires 18 and 19 is to be determined, as is known per se for such components.
  • the necessary grid spacing 25 between the extensions 20 and 22 or 21 and 23 can be determined by appropriate choice of dimensions.
  • the coverings 3 and 4 in their embodiment of the invention in a thickness of up to 5 ⁇ m and preferably 2 ⁇ m ensure good dissipation of the heat generated in the interior of the monolithic block, since they are by using relatively more silver than palladium can be made thicker than is possible for pure palladium layers because of the production and because of the relatively high costs for pure palladium.
  • the UI diagram shown in FIG. 2 shows one of the advantages of the present invention, which consists in the fact that the small amount of bismuth in the varistor material and the possible use of silver in larger amounts for the coatings 3 and 4 compared to the palladium make alloying away of the metal of the coverings and thus an island formation which deteriorates the properties does not occur.
  • the island formation which is caused by alloying away the linings (migration), causes the terminal voltage to rise sharply at high currents, because the series resistance of the linings increases sharply due to this island formation.
  • FIG. 3 shows a U-I diagram in which a varistor of the present invention (curve 30) is compared with known varistors (curves 28 and 29). 3 is taken from FIG. 2 of the publication "Advances in Ceramics" mentioned at the beginning.
  • Curve 28 applies to varistors that consist of 20 varistor material layers each 40 ⁇ m thick, while curve 29 applies to known varistors with 20 varistor material layers each 150 ⁇ m thick.
  • Curve 30 applies to varistors of the present invention made of 50 layers each 30 ⁇ m thick.
  • the heat dissipation from the body with coatings of 70% silver and 30% palladium, each with a thickness of 2.0 pm, is sufficiently large to ensure the functionality of the varistor To ensure even at high currents or voltages.
  • the diagram according to FIG. 4 shows the varistor voltage as a function of the sintering temperature at a sintering time of one hour for varistors which consist of 10 layers, with different layer thicknesses being present.
  • the varistor voltage is given in volts on the ordinate and the sintering temperature t in ° C on the abscissa.
  • the coatings consist of 70% silver and 30% palladium and are 2 ⁇ m thick.
  • Curve 31 applies to varistors consisting of 10 layers with a layer thickness of 165 ⁇ m each.
  • Curve 32 applies to varistors consisting of 10 layers with a layer thickness of 77 ⁇ m each.
  • Curve 33 applies to varistors consisting of 10 layers with a thickness of 37 ⁇ m each, and curve 34 applies to varistors composed of 10 layers with a layer thickness of 23 ⁇ m each.
  • the protection level of varistors is the terminal voltage that occurs at a varistor when a current pulse of the indicated current intensity occurs.
  • the terminal voltage in volts is plotted on the ordinate, while the sintering temperature t s is given in "C on the abscissa.
  • the specified varistor material ensures a dielectric strength of 300 V / mm, which ensures sufficient steepness (non-linearity exponent o () even with thin layers.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
EP86100376A 1985-01-17 1986-01-13 Résistance électrique dépendant de la tension (varistance) Expired EP0189087B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT86100376T ATE35344T1 (de) 1985-01-17 1986-01-13 Spannungsabhaengiger elektrischer widerstand (varistor).

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3501419 1985-01-17
DE3501419 1985-01-17

Publications (2)

Publication Number Publication Date
EP0189087A1 true EP0189087A1 (fr) 1986-07-30
EP0189087B1 EP0189087B1 (fr) 1988-06-22

Family

ID=6260071

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86100376A Expired EP0189087B1 (fr) 1985-01-17 1986-01-13 Résistance électrique dépendant de la tension (varistance)

Country Status (5)

Country Link
US (1) US4675644A (fr)
EP (1) EP0189087B1 (fr)
JP (1) JPS61170005A (fr)
AT (1) ATE35344T1 (fr)
DE (1) DE3660342D1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4819128A (en) * 1987-07-31 1989-04-04 Siemens Aktiengesellschaft Electrical multilayer component comprising a sintered, monolithic ceramic body and method for its manufacture
EP0316015A3 (en) * 1987-11-12 1989-11-08 Meidensha Kabushiki Kaisha Material for resistor body and non-linear resistor made thereof
US4906512A (en) * 1987-07-31 1990-03-06 Siemens Aktiengesellschaft Electrical multilayer component comprising a sintered, monolithic ceramic body and method for its manufacture
FR2659785A1 (fr) * 1990-03-16 1991-09-20 Ecco Ltd Matiere utilisable dans la fabrication de varistances et procede d'obtention.
DE4030479A1 (de) * 1990-09-26 1992-04-02 Siemens Ag Nichtlinearer spannungs- oder temperaturabhaengiger elektrischer widerstand in chip-bauform
US5500996A (en) * 1990-09-21 1996-03-26 Siemens Aktiengesellschaft Method for manufacturing a thermistor having a negative temperature coefficient in multi-layer technology
WO1998021754A1 (fr) * 1996-11-11 1998-05-22 Zivic Zoran DIODE POLYCRISTALLINE MULTICOUCHE ZnO
US5973588A (en) * 1990-06-26 1999-10-26 Ecco Limited Multilayer varistor with pin receiving apertures
US6444504B1 (en) 1997-11-10 2002-09-03 Zoran Zivic Multilayer ZnO polycrystallin diode
US10262778B2 (en) 2015-11-27 2019-04-16 Epcos Ag Multilayer component and process for producing a multilayer component

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3873206D1 (de) * 1987-07-31 1992-09-03 Siemens Ag Fuellschichtbauteil mit einem gesinterten, monolithischen keramikkoerper und verfahren zu dessen herstellung.
DE3930000A1 (de) * 1988-09-08 1990-03-15 Murata Manufacturing Co Varistor in schichtbauweise
JPH077613B2 (ja) * 1990-02-02 1995-01-30 東京電力株式会社 懸垂型避雷碍子
GB2242066B (en) * 1990-03-16 1994-04-27 Ecco Ltd Varistor structures
GB2242068C (en) * 1990-03-16 1996-01-24 Ecco Ltd Varistor manufacturing method and apparatus
US6183685B1 (en) 1990-06-26 2001-02-06 Littlefuse Inc. Varistor manufacturing method
JP3121119B2 (ja) * 1992-06-16 2000-12-25 ローム株式会社 積層セラミックコンデンサの外部電極の形成方法
JP2674523B2 (ja) * 1993-12-16 1997-11-12 日本電気株式会社 セラミック配線基板とその製造方法
JP3077056B2 (ja) * 1996-09-12 2000-08-14 株式会社村田製作所 積層型電子部品
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
JPH11273914A (ja) * 1998-03-26 1999-10-08 Murata Mfg Co Ltd 積層型バリスタ
US5999398A (en) * 1998-06-24 1999-12-07 Avx Corporation Feed-through filter assembly having varistor and capacitor structure
DE19903456A1 (de) * 1999-01-28 2000-08-10 Philips Corp Intellectual Pty Mehrkomponenten-Bauteil
DE19931056B4 (de) 1999-07-06 2005-05-19 Epcos Ag Vielschichtvaristor niedriger Kapazität
JP3498211B2 (ja) * 1999-12-10 2004-02-16 株式会社村田製作所 積層型半導体セラミック電子部品
US6717506B2 (en) * 2000-11-02 2004-04-06 Murata Manufacturing Co., Ltd. Chip-type resistor element
US20050212648A1 (en) * 2004-03-23 2005-09-29 Inpaq Technology Co., Ltd. Low-capacitance laminate varistor
JP2008537843A (ja) 2005-03-01 2008-09-25 エックストゥーワイ アテニュエイターズ，エルエルシー 内部で重なり合った調整器
DE102005028498B4 (de) * 2005-06-20 2015-01-22 Epcos Ag Elektrisches Vielschichtbauelement
CN103180915A (zh) * 2010-11-03 2013-06-26 埃普科斯股份有限公司 多层陶瓷元件及用于制造多层陶瓷元件的方法
JP6231127B2 (ja) * 2012-12-27 2017-11-15 リテルヒューズ・インク 酸化亜鉛ベースのバリスタ及びその製造方法
DE102016104990A1 (de) 2016-03-17 2017-09-21 Epcos Ag Keramikmaterial, Varistor und Verfahren zum Herstellen des Keramikmaterials und des Varistors
TWI667667B (zh) * 2016-09-26 2019-08-01 立昌先進科技股份有限公司 一種提高多層貼片式變阻器通流面積的製法及其製得的變阻器元件
WO2020149034A1 (fr) * 2019-01-16 2020-07-23 パナソニックＩｐマネジメント株式会社 Ensemble varistance
US11315709B2 (en) * 2019-12-20 2022-04-26 Hubbell Incorporated Metal oxide varistor formulation

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Publication number Priority date Publication date Assignee Title
US4290041A (en) * 1978-02-10 1981-09-15 Nippon Electric Co., Ltd. Voltage dependent nonlinear resistor
FR2523993A1 (fr) * 1982-03-24 1983-09-30 Cables De Lyon Geoffroy Delore Pate serigraphiable a oxydes metalliques et produit obtenu avec cette pate

Family Cites Families (3)

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US2736080A (en) * 1956-02-28 walker etal
US3235939A (en) * 1962-09-06 1966-02-22 Aerovox Corp Process for manufacturing multilayer ceramic capacitors
DE1282119B (de) * 1966-05-18 1968-11-07 Siemens Ag Verfahren zum Herstellen von elektrischen Bauelementen unter Anwendung der Duennfolienmethode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290041A (en) * 1978-02-10 1981-09-15 Nippon Electric Co., Ltd. Voltage dependent nonlinear resistor
FR2523993A1 (fr) * 1982-03-24 1983-09-30 Cables De Lyon Geoffroy Delore Pate serigraphiable a oxydes metalliques et produit obtenu avec cette pate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ADVANCES IN CERAMICS, Band 1, 1981, Seiten 349-358, Columbus, Ohio, US; N. SHOHATA et al.: "Properties of multilayer ZnO ceramic varistors" *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906512A (en) * 1987-07-31 1990-03-06 Siemens Aktiengesellschaft Electrical multilayer component comprising a sintered, monolithic ceramic body and method for its manufacture
US4819128A (en) * 1987-07-31 1989-04-04 Siemens Aktiengesellschaft Electrical multilayer component comprising a sintered, monolithic ceramic body and method for its manufacture
EP0316015A3 (en) * 1987-11-12 1989-11-08 Meidensha Kabushiki Kaisha Material for resistor body and non-linear resistor made thereof
US4920328A (en) * 1987-11-12 1990-04-24 Kabushiki Kaisha Meidensha Material for resistor body and non-linear resistor made thereof
FR2659785A1 (fr) * 1990-03-16 1991-09-20 Ecco Ltd Matiere utilisable dans la fabrication de varistances et procede d'obtention.
US6743381B2 (en) 1990-03-16 2004-06-01 Littlefuse, Inc. Process for forming varistor ink composition
US5973588A (en) * 1990-06-26 1999-10-26 Ecco Limited Multilayer varistor with pin receiving apertures
US5500996A (en) * 1990-09-21 1996-03-26 Siemens Aktiengesellschaft Method for manufacturing a thermistor having a negative temperature coefficient in multi-layer technology
DE4030479A1 (de) * 1990-09-26 1992-04-02 Siemens Ag Nichtlinearer spannungs- oder temperaturabhaengiger elektrischer widerstand in chip-bauform
WO1998021754A1 (fr) * 1996-11-11 1998-05-22 Zivic Zoran DIODE POLYCRISTALLINE MULTICOUCHE ZnO
US6444504B1 (en) 1997-11-10 2002-09-03 Zoran Zivic Multilayer ZnO polycrystallin diode
US10262778B2 (en) 2015-11-27 2019-04-16 Epcos Ag Multilayer component and process for producing a multilayer component
US10566115B2 (en) 2015-11-27 2020-02-18 Epcos Ag Multilayer component and process for producing a multilayer component

Also Published As

Publication number Publication date
JPH0353761B2 (fr) 1991-08-16
EP0189087B1 (fr) 1988-06-22
ATE35344T1 (de) 1988-07-15
DE3660342D1 (en) 1988-07-28
US4675644A (en) 1987-06-23
JPS61170005A (ja) 1986-07-31

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