EP0200126A1 - Méthode de fabrication d'une résistance céramique dépendant de la tension à base de ZnO - Google Patents
Méthode de fabrication d'une résistance céramique dépendant de la tension à base de ZnO Download PDFInfo
- Publication number
- EP0200126A1 EP0200126A1 EP86105433A EP86105433A EP0200126A1 EP 0200126 A1 EP0200126 A1 EP 0200126A1 EP 86105433 A EP86105433 A EP 86105433A EP 86105433 A EP86105433 A EP 86105433A EP 0200126 A1 EP0200126 A1 EP 0200126A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- additional elements
- ammonium
- zno
- powder
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 12
- 230000001419 dependent effect Effects 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 150000003839 salts Chemical class 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000000725 suspension Substances 0.000 claims abstract description 17
- 239000000243 solution Substances 0.000 claims abstract description 12
- 239000002253 acid Substances 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000008187 granular material Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 5
- 150000001412 amines Chemical class 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims abstract description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical class [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 24
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 150000003863 ammonium salts Chemical class 0.000 claims description 6
- 125000005907 alkyl ester group Chemical group 0.000 claims description 5
- 238000001694 spray drying Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 150000000000 tetracarboxylic acids Chemical class 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 150000003628 tricarboxylic acids Chemical class 0.000 claims description 2
- -1 rare earths Inorganic materials 0.000 claims 1
- 150000007513 acids Chemical class 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 abstract description 2
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 abstract description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical class [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001860 citric acid derivatives Chemical class 0.000 abstract description 2
- AUTNMGCKBXKHNV-UHFFFAOYSA-P diazanium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [NH4+].[NH4+].O1B([O-])OB2OB([O-])OB1O2 AUTNMGCKBXKHNV-UHFFFAOYSA-P 0.000 abstract description 2
- 150000004675 formic acid derivatives Chemical class 0.000 abstract description 2
- 150000003893 lactate salts Chemical class 0.000 abstract description 2
- 150000003892 tartrate salts Chemical class 0.000 abstract description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical class [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000084 colloidal system Substances 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- TYBCBKALNYOSOG-UHFFFAOYSA-L azanium;cobalt(2+);2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [NH4+].[Co+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O TYBCBKALNYOSOG-UHFFFAOYSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QSBNOZODKXUXSP-UHFFFAOYSA-K bismuth;azane;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound N.[Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QSBNOZODKXUXSP-UHFFFAOYSA-K 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical group C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000007522 mineralic acids Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Definitions
- the invention relates to a process for preparing a 'voltage-dependent ceramic resistance based on Zn0 according to the preamble of the preamble of claim 1 and a resistor produced by the method according to the preamble of the preamble of claim 7.
- Voltage-dependent resistors (varistors) based on ceramic sintered bodies predominantly containing Zn0 are known in numerous variants. Their electrical properties are primarily determined by the additional elements that are mostly present as oxides - including metal oxides in particular. These additives are present in quantities from one thousandth to a few mol percent and must be homogeneously distributed in the ZnO matrix.
- the current production processors usually start with powdered metal oxides.
- the homogeneity of the substances plays a role here, starting with cer powder mixture, through the compact to the finished sintered body.
- the processes provide for homogeneous mixing and grinding with the aid of carrier liquids, usually as an aqueous suspension (see, for example, EP-A-0 115 149; EP-A-0 115 050; EP-B-0 029 749).
- the ZnO varistors produced in this way by mixing and grinding powders and then pressing and sintering generally suffer from the lack of sufficient homogeneity of the sintered bodies. It is practically not possible to evenly distribute the additives sometimes contained in extremely small amounts in the ZnO crystallites or the grain boundaries. Demixing processes during the manufacturing process, formation of undesired phases due to contamination from abrasion during grinding processes, etc. further deteriorate the physical properties of varistors produced in this way. Exact reproducibility is therefore practically impossible to achieve with these conventional methods.
- the invention is based on the object of specifying a method for producing a voltage-dependent ceramic resistor and a resistor produced thereafter on the basis of ZnO and additional oxides, which leads to sintered bodies which are as homogeneous as possible and which are reproducible in the composition and concentration of the various components, and in particular for targeted and controlled mass production is suitable.
- the figure shows a flow diagram of the method in block form. The figure requires no further explanation.
- the essence of the invention is that the additional elements (dopants) are added to a slurry of ZnO powder in the form of water-soluble organic salts.
- Numerous metal salts of simple organic carboxylic acids such as formic acid, acetic acid, propionic acid, etc. are water soluble.
- salts of some important elements are insoluble in water. This problem can be avoided by using salts or half salts or mixed salts (NH 4 ) of the di-, tri- and tetra-carboxylic acids.
- Hydroxycarboxylic acids eg lactic acid, tartaric acid, citric acid
- NH 3 and organic amines form water-soluble complexes or addition compounds with the organic metal salts, which are also suitable for this purpose.
- the addition of an ammonium salt of the hydroxycarboxylic acids mentioned often increases the solubility of the simple organic metal salts.
- Some of the additional elements are also capable of forming acids (eg boron, chromium, silicon), the ammonium salts of which are water-soluble and can be used.
- Lower alkyl esters, for example methyl and ethyl esters of oligo-orthosilicic acid are water-soluble and can be used to dope the ceramic with Si.
- the water is removed from the suspension of Zn0 in the aqueous solution, which contains all the additional elements, by spray drying.
- the suspension is atomized into a jet of fine droplets in a stream of hot air.
- the water evaporates extremely quickly, and the ZnO particles contained in a droplet bake with the precipitated salts of the additional elements to form compact, spherical agglomerates with a diameter of 5 to 50 ⁇ m. A free-flowing, easily compressible granulate is created.
- the salts are deposited on the ZnO particles in an amorphous, ie non-crystalline form.
- the organic salts can be easily and residue-free at relatively low temperatures before or in the first phase of the sintering process convert to metal oxides. There are no grinding or sieving processes.
- a voltage-dependent ceramic resistor based on Zn0 with the following composition was produced.
- 4 ml of an ammonium bismuth citrate solution (concentration 0.5 g - atom Bi in 1000 ml solution) and 20 ml of an ammonium cobalt citrate solution (concentration 0.5 g - atom Co in 1000 ml solution) were added during the suspension.
- the suspension was then sprayed into a free-flowing powder using air spray driers.
- the powder consisted of spherical agglomerates of 5 to 50 ⁇ m in diameter. Tablets of 20 mm in diameter and 5 mm in height were produced from this powder by uniaxial pressing in a steel mold. The tablets were subjected to progressive heat treatment in an air oven.
- the first phase consisted of heating to a temperature of 650 ° C. in order to convert the additional elements into oxides, which was carried out at a rate of increase of 50 ° C./h.
- the second phase was a slow increase in temperature from 15 ° C / h to 900 ° C, which was mainly used to completely drive out any decomposition products that might be left behind.
- the last phase included an increase in temperature from 100 ° C / h to 1150 ° C and a seal sinter at this temperature for about 1 h.
- the finished sintered body was then cooled to room temperature.
- a varistor with the following composition was produced according to the procedure given in Example 1: 1 mol of ZnO powder was slurried in 1 ml of di-ammonium citrate in 100 ml of H 2 O using a shear mixer. During the suspension, the additional elements mentioned above were added to the liquid in the form of aqueous solutions of organic salts in the correct stoichiometric ratio.
- Aqueous solutions of metal salts (corresponding to the required additional elements) were initially organi sher acids.
- the elements were selected in the stoichiometric ratio given:
- the aqueous solution of the metal salts was added to a suspension of 100 mol Zn0 in 0.5% di-ammonium hydrogen citrate solution with vigorous stirring in a shear mixer. Polyvinyl alcohol was also added to the suspension as a binder. The suspension was then converted into a free-flowing powder in a spray dryer in air. The further procedure corresponded to that in Example 1. The sintering process was carried out at a temperature of 1200 ° C. for 2 hours.
- a varistor mixture of the following composition was put together using the method given in Example 3 and a varistor sintered body was produced from the powder mixture produced in this way.
- the additional elements in the form of aqueous and / or colloidal solutions of organic salts or complex compounds of the ZnO slurry in H20 can be added or the latter can be added successively to the former in the preparation of the suspension with stirring.
- This preferably relates to the elements Bi, Sb, Co, Mn, Ni, Cr, Al, Ga, Ba, B, Si, Ti, Pr, W, rare earths, etc.
- the following can advantageously be used as water-soluble chemical compounds: formates, Acetates, lactates, tartrates, citrates, ammonium citrates, ammonium tartrates etc.
- the additional element in the form of a water-soluble salt of a hydoxy-substituted or unsubstituted mono-, di-, tri- or tetracarboxylic acid can be added to the Zn0 suspension in H 2 O.
- the additional elements Cr, Si and B can be added to the ZnO suspension in H 2 O as a real or as a colloidal solution of their acid or as their ammonium salts or as an alkyl ester or as a hydroxide sol, each in H 2 O, in the ZnO suspension.
- ammonia, a hydroxycarboxylic acid ammonium salt or an organic amine can be added to the solutions.
- Temperatures of 400 to 650 ° C are generally sufficient to decompose organic residues.
- the powder or granulate, which is produced by spray drying, can also heated to 400 - 700 ° C before uniaxial, two-dimensional radial or isostatic cold pressing. Spray drying itself can also be carried out at temperatures of 400 - 700 ° C (spray pyrolysis). In both cases, the additional elements are converted into the form of their oxides.
- the sintering process can be carried out for 1/2 to 2 hours at temperatures between 1100 ° C and 1300 ° C.
- the voltage-dependent ceramic resistance produced using the new process is characterized by macroscopic and microscopic homogeneous distribution of the additional elements in the ZnO matrix and in the grain boundaries.
- the phases containing the additional elements show no agglomerations and have a diameter of less than 2 ⁇ m.
- ⁇ is usually defined for one or more areas of current density that are of interest.
- ⁇ is given for a current density of 0.15 mA / cm 2 .
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1808/85 | 1985-04-29 | ||
| CH180885 | 1985-04-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0200126A1 true EP0200126A1 (fr) | 1986-11-05 |
| EP0200126B1 EP0200126B1 (fr) | 1990-09-26 |
Family
ID=4219086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP86105433A Expired - Lifetime EP0200126B1 (fr) | 1985-04-29 | 1986-04-19 | Méthode de fabrication d'une résistance céramique dépendant de la tension à base de ZnO |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4767729A (fr) |
| EP (1) | EP0200126B1 (fr) |
| CN (1) | CN1006499B (fr) |
| DE (1) | DE3674451D1 (fr) |
| IN (1) | IN167250B (fr) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3619620A1 (de) * | 1986-06-11 | 1987-12-17 | Siemens Ag | Verfahren zur herstellung keramischen zinkoxid-varistormaterials und verwendung des nach diesem verfahren hergestellten materials |
| DE3830597A1 (de) * | 1987-09-11 | 1989-03-30 | Fuji Electric Co Ltd | Verfahren zur herstellung eines widerstands mit nichtlinearer spannungscharakteristik |
| EP0667626A3 (fr) * | 1994-02-10 | 1996-04-17 | Hitachi Ltd | Résistance non-linéaire dépendant de la tension et procédé de fabrication. |
| EP0762438A3 (fr) * | 1995-09-07 | 1997-12-10 | Mitsubishi Denki Kabushiki Kaisha | Elément de résistance électrique à caractéristiques de tension nonlinéaire et méthode de fabrication |
| EP2409952A4 (fr) * | 2009-10-07 | 2012-05-23 | Sakai Chemical Industry Co | Particules d'oxyde de zinc, procédé pour la production des particules, charge dissipant la chaleur, composition de résine dissipant la chaleur, graisse dissipant la chaleur et composition de revêtement dissipant la chaleur |
| WO2020007553A1 (fr) * | 2018-07-04 | 2020-01-09 | Tdk Electronics Ag | Matériau céramique, varistance et procédé de fabrication du matériau céramique et de la varistance |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5039452A (en) * | 1986-10-16 | 1991-08-13 | Raychem Corporation | Metal oxide varistors, precursor powder compositions and methods for preparing same |
| JP2620364B2 (ja) * | 1988-03-18 | 1997-06-11 | 本田技研工業株式会社 | セラミックス焼結体の製造方法 |
| US5236632A (en) * | 1989-08-10 | 1993-08-17 | Tosoh Corporation | Zinc oxide sintered body, and preparation process and use thereof |
| US4996510A (en) * | 1989-12-08 | 1991-02-26 | Raychem Corporation | Metal oxide varistors and methods therefor |
| US5635070A (en) * | 1990-07-13 | 1997-06-03 | Isco, Inc. | Apparatus and method for supercritical fluid extraction |
| DE4027927A1 (de) * | 1990-09-04 | 1992-03-05 | Bayer Ag | Brausekomponente und verfahren zu ihrer herstellung |
| JP3622774B2 (ja) * | 1994-04-18 | 2005-02-23 | 株式会社村田製作所 | 電圧非直線抵抗体の製造方法 |
| WO2000049659A1 (fr) * | 1999-02-17 | 2000-08-24 | International Business Machines Corporation | Dispositif micro-electronique de stockage de l'information et son procede d'utilisation |
| DE10221537A1 (de) * | 2002-05-15 | 2003-11-27 | Thueringisches Inst Textil | Verfahren zur Herstellung sphärischer, hybridischer Formkörper aus löslichen Polymeren |
| CN100486928C (zh) * | 2006-06-30 | 2009-05-13 | 中国科学院合肥物质科学研究院 | 氧化锌压敏陶瓷及其制备方法 |
| US8512467B2 (en) * | 2006-08-21 | 2013-08-20 | Air Products And Chemicals, Inc. | Zinc oxide nanoparticle dispersions |
| WO2008024702A2 (fr) * | 2006-08-21 | 2008-02-28 | Air Products And Chemicals, Inc. | Dispersions de nanoparticules d'oxyde de zinc |
| CN101239819B (zh) * | 2007-09-14 | 2012-05-16 | 深圳顺络电子股份有限公司 | 片式多层氧化锌压敏电阻陶瓷粉料制备方法 |
| WO2009067178A1 (fr) * | 2007-11-20 | 2009-05-28 | Exxonmobil Research And Engineering Company | Cermets de borure denses à distribution bimodale ou multimodale avec liant à faible point de fusion |
| CN101197203B (zh) * | 2007-11-30 | 2010-06-09 | 华南理工大学 | 一种氧化锡压敏电阻材料及其制备方法 |
| TWI402864B (zh) * | 2008-07-11 | 2013-07-21 | Sfi Electronics Technology Inc | 一種氧化鋅變阻器的製法 |
| CN101354936B (zh) * | 2008-09-12 | 2010-09-29 | 中国西电电气股份有限公司 | 一种氧化锌电阻片用添加物的制备方法 |
| CN101367649B (zh) * | 2008-10-13 | 2011-08-24 | 电子科技大学 | 一种氧化锌压敏电阻介质材料及电阻器制备方法 |
| CN101630553B (zh) | 2009-07-17 | 2011-10-12 | 立昌先进科技股份有限公司 | 一种氧化锌变阻器的制备方法 |
| CN103011798B (zh) * | 2012-12-19 | 2014-03-05 | 广西新未来信息产业股份有限公司 | 一种高焦耳型压敏电阻及其制备方法 |
| CN103011800A (zh) * | 2012-12-27 | 2013-04-03 | 青岛艾德森能源科技有限公司 | 一种氧化锌电阻的制备方法 |
| CN103021607A (zh) * | 2012-12-27 | 2013-04-03 | 青岛艾德森能源科技有限公司 | 一种氧化锌电阻 |
| DE102016104990A1 (de) * | 2016-03-17 | 2017-09-21 | Epcos Ag | Keramikmaterial, Varistor und Verfahren zum Herstellen des Keramikmaterials und des Varistors |
| JP7744346B2 (ja) * | 2019-12-20 | 2025-09-25 | ハッベル・インコーポレイテッド | 金属酸化物バリスタ配合物 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142996A (en) * | 1977-10-25 | 1979-03-06 | General Electric Company | Method of making homogenous metal oxide varistor powders |
| GB1554356A (en) * | 1978-04-19 | 1979-10-17 | Power Dev Ltd | Resistance materials |
| DE2910841A1 (de) * | 1979-03-20 | 1980-09-25 | Licentia Gmbh | Spannungsabhaengiges widerstandsmaterial und verfahren zu dessen herstellung |
| EP0115050A1 (fr) * | 1982-12-24 | 1984-08-08 | Kabushiki Kaisha Toshiba | Varistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4318995A (en) * | 1980-04-25 | 1982-03-09 | Bell Telephone Laboratories, Incorporated | Method of preparing lightly doped ceramic materials |
| JPS6021862A (ja) * | 1983-07-18 | 1985-02-04 | 松下電器産業株式会社 | 高周波スパツタリング用タ−ゲツト |
-
1986
- 1986-04-19 DE DE8686105433T patent/DE3674451D1/de not_active Expired - Lifetime
- 1986-04-19 EP EP86105433A patent/EP0200126B1/fr not_active Expired - Lifetime
- 1986-04-29 CN CN86102994A patent/CN1006499B/zh not_active Expired
- 1986-04-29 US US06/857,062 patent/US4767729A/en not_active Expired - Lifetime
- 1986-04-30 IN IN335/MAS/86A patent/IN167250B/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142996A (en) * | 1977-10-25 | 1979-03-06 | General Electric Company | Method of making homogenous metal oxide varistor powders |
| GB1554356A (en) * | 1978-04-19 | 1979-10-17 | Power Dev Ltd | Resistance materials |
| DE2910841A1 (de) * | 1979-03-20 | 1980-09-25 | Licentia Gmbh | Spannungsabhaengiges widerstandsmaterial und verfahren zu dessen herstellung |
| EP0115050A1 (fr) * | 1982-12-24 | 1984-08-08 | Kabushiki Kaisha Toshiba | Varistor |
Non-Patent Citations (1)
| Title |
|---|
| PATENTS ABSTRACTS OF JAPAN, Band 9, Nr. 119 (C-282)[1842], 23. Mai 1985; & JP -A-60 011 219 (MITSUBISHI DENKI K.K.) 21.01.1985 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3619620A1 (de) * | 1986-06-11 | 1987-12-17 | Siemens Ag | Verfahren zur herstellung keramischen zinkoxid-varistormaterials und verwendung des nach diesem verfahren hergestellten materials |
| DE3830597A1 (de) * | 1987-09-11 | 1989-03-30 | Fuji Electric Co Ltd | Verfahren zur herstellung eines widerstands mit nichtlinearer spannungscharakteristik |
| EP0667626A3 (fr) * | 1994-02-10 | 1996-04-17 | Hitachi Ltd | Résistance non-linéaire dépendant de la tension et procédé de fabrication. |
| US5614138A (en) * | 1994-02-10 | 1997-03-25 | Hitachi Ltd. | Method of fabricating non-linear resistor |
| EP0762438A3 (fr) * | 1995-09-07 | 1997-12-10 | Mitsubishi Denki Kabushiki Kaisha | Elément de résistance électrique à caractéristiques de tension nonlinéaire et méthode de fabrication |
| US5807510A (en) * | 1995-09-07 | 1998-09-15 | Mitsubishi Denki Kabushiki Kaisha | Electric resistance element exhibiting voltage nonlinearity characteristic and method of manufacturing the same |
| EP2409952A4 (fr) * | 2009-10-07 | 2012-05-23 | Sakai Chemical Industry Co | Particules d'oxyde de zinc, procédé pour la production des particules, charge dissipant la chaleur, composition de résine dissipant la chaleur, graisse dissipant la chaleur et composition de revêtement dissipant la chaleur |
| WO2020007553A1 (fr) * | 2018-07-04 | 2020-01-09 | Tdk Electronics Ag | Matériau céramique, varistance et procédé de fabrication du matériau céramique et de la varistance |
| CN112335001A (zh) * | 2018-07-04 | 2021-02-05 | Tdk电子股份有限公司 | 陶瓷材料、压敏电阻以及制造该陶瓷材料和压敏电阻的方法 |
| US11557410B2 (en) | 2018-07-04 | 2023-01-17 | Tdk Electronics Ag | Ceramic material, varistor, and method for producing the ceramic material and the varistor |
| CN112335001B (zh) * | 2018-07-04 | 2023-10-24 | Tdk电子股份有限公司 | 陶瓷材料、压敏电阻以及制造该陶瓷材料和压敏电阻的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IN167250B (fr) | 1990-09-29 |
| DE3674451D1 (de) | 1990-10-31 |
| CN1006499B (zh) | 1990-01-17 |
| CN86102994A (zh) | 1986-10-29 |
| US4767729A (en) | 1988-08-30 |
| EP0200126B1 (fr) | 1990-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0200126B1 (fr) | Méthode de fabrication d'une résistance céramique dépendant de la tension à base de ZnO | |
| DE4037733C2 (de) | Verfahren zum Herstellen eines Indium/Zinn-Oxid-Targets | |
| DE2850108A1 (de) | Hartferritpulver und verfahren zu seiner herstellung | |
| DE60300173T2 (de) | Verfahren zur Herstellung von kristallinem Mischoxidpulver | |
| DE3876619T2 (de) | Verfahren zur herstellung von metalloxidischen pulvern. | |
| DE112019002838T5 (de) | Zinkoxidvaristor | |
| EP0609776A1 (fr) | Céramique frittée pour thermistors à stabilité élevée et procédé pour sa production | |
| DE3006262C2 (de) | Verfahren zur Herstellung von fasrigen Titansäure-Metallsalzen | |
| DE1955260B2 (de) | Verfahren zur herstellung von abriebsbestaendigen, festen, ein antimonoxyd enthaltenden katalysatoren | |
| DE1515890C3 (de) | Verfahren zum Herstellen von Widerstanden und Leitungsfuhrungen fur mikroelektromsche Schaltkreise | |
| DE10139109A1 (de) | Gegen reduzierende Atmosphäre beständiges Thermistorelement, Herstellungsverfahren dafür sowie Temperatursensor | |
| DE2758315A1 (de) | Oxidmaterial zur verwendung in einem sauerstoffgenerator und verfahren zu seiner herstellung | |
| DE2110489C3 (de) | Verfahren zur Herstellung von anisotropen Metalloxid Magneten | |
| DE3622517C2 (fr) | ||
| DE3854907T2 (de) | Supraleitende Materialien und Verfahren um sie herzustellen | |
| DE69118670T2 (de) | Auf seltenem Erdmetall basierendes oxidisches Material und Verfahren zu seiner Herstellung | |
| DE3840773A1 (de) | Sinterfaehiges keramikpulver, verfahren zu seiner herstellung, daraus hergestellte siliziumnitridkeramik, verfahren zu deren herstellung sowie deren verwendung | |
| DE68921382T2 (de) | Verfahren zur Herstellung von oxidischen Supraleitern des Typs Wismut. | |
| DE112008000038T5 (de) | Verfahren zur Herstellung eines pulverförmigen Rohmaterials für einen Oxid-Supraleiter | |
| DE3041960A1 (de) | Verfahren zur herstellung eines magnetpulvers fuer die magnetaufzeichnung mit hoher dichte | |
| DE2910841A1 (de) | Spannungsabhaengiges widerstandsmaterial und verfahren zu dessen herstellung | |
| DE3619620C2 (fr) | ||
| DE1590869C3 (de) | Verfahren zur Herstellung einer Heiß lederschicht auf einer Unterlage | |
| DE2224150A1 (de) | Verfahren zur herstellung von ferritmaterialien | |
| DE4320836A1 (de) | Verfahren zur Herstellung eines Dotierelement-Metalloxidpulvers für keramische Zinkoxid-Varistoren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): CH DE FR GB LI SE |
|
| 17P | Request for examination filed |
Effective date: 19870424 |
|
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: BBC BROWN BOVERI AG |
|
| 17Q | First examination report despatched |
Effective date: 19880812 |
|
| GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
| AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): CH DE FR GB LI SE |
|
| REF | Corresponds to: |
Ref document number: 3674451 Country of ref document: DE Date of ref document: 19901031 |
|
| GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) | ||
| ET | Fr: translation filed | ||
| PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
| 26N | No opposition filed | ||
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: SE Payment date: 19930322 Year of fee payment: 8 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Effective date: 19940420 |
|
| EUG | Se: european patent has lapsed |
Ref document number: 86105433.6 Effective date: 19941110 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20000313 Year of fee payment: 15 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20000320 Year of fee payment: 15 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20000323 Year of fee payment: 15 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20000327 Year of fee payment: 15 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010419 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: THE PATENT HAS BEEN ANNULLED BY A DECISION OF A NATIONAL AUTHORITY Effective date: 20010430 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010518 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010518 |
|
| GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20010419 |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020201 |
|
| REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: AUV Free format text: DAS OBENGEANNNTE PATENTGESUCH IST, MANGELS BEZAHLUNG DURCH VERFUEGUNG VOM 30.11.2001 ZURUECKGEWIESEN WORDEN. |