EP0220511A2 - Circuit pour un détecteur à infrarouge pour contrôler des espaces - Google Patents

Circuit pour un détecteur à infrarouge pour contrôler des espaces Download PDF

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Publication number
EP0220511A2
EP0220511A2 EP86113333A EP86113333A EP0220511A2 EP 0220511 A2 EP0220511 A2 EP 0220511A2 EP 86113333 A EP86113333 A EP 86113333A EP 86113333 A EP86113333 A EP 86113333A EP 0220511 A2 EP0220511 A2 EP 0220511A2
Authority
EP
European Patent Office
Prior art keywords
circuit arrangement
operational amplifier
field effect
effect transistor
constant current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86113333A
Other languages
German (de)
English (en)
Other versions
EP0220511B1 (fr
EP0220511A3 (en
Inventor
Hermann Dipl.-Ing. Zierhut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hirschmann Electronics GmbH and Co KG
Original Assignee
Hirschmann Electronics GmbH and Co KG
Richard Hirschmann Radiotechnisches Werk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hirschmann Electronics GmbH and Co KG, Richard Hirschmann Radiotechnisches Werk filed Critical Hirschmann Electronics GmbH and Co KG
Publication of EP0220511A2 publication Critical patent/EP0220511A2/fr
Publication of EP0220511A3 publication Critical patent/EP0220511A3/de
Application granted granted Critical
Publication of EP0220511B1 publication Critical patent/EP0220511B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00—Burglar, theft or intruder alarms
    • G08B13/18—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
    • G08B13/189—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems
    • G08B13/19—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems

Definitions

  • the invention relates to a circuit arrangement for an infrared room surveillance detector with a sensor and a field effect transistor connected downstream thereof.
  • Fig. 1a shows a known circuit of this type, in which one connection of a pyro element P is connected to ground or to the minus operating voltage terminal and the other connection is connected to the gate electrode of a field effect transistor (hereinafter abbreviated to FET).
  • the drain electrode of the FET is connected to the positive operating voltage terminal U B.
  • the source electrode of the FET is connected to ground via a resistor R A or to the minus operating voltage terminal -U B.
  • the signal voltage U A is tapped via this resistor R A.
  • the circuit shown is thus designed analogously to an emitter follower circuit.
  • the signal voltage U A is very sensitive to interference voltages which are superimposed on the operating voltage U B , since such interference voltages also affect the gate voltage and thus the signal voltage U A due to the drain-gate reaction of the FET lies in the ⁇ V range.
  • the operating voltage + U B applied to the drain electrode of the FET has noise or interference components in said ⁇ V range, so that the sensor signal cannot be evaluated with sufficient reliability for signaling. It is therefore necessary to sieve the operating voltage U B very well, ie it is a power supply unit with a high sieve factor 100 to 120 dB required. To maintain the high sieve factor, two power supplies are often connected in series. The circuit complexity for screening the operating voltage U B is therefore high.
  • the invention is therefore based on the object of providing a circuit arrangement of the type mentioned at the outset which does not require a large amount of sieving in the power supply unit and which enables the sensor signal to be amplified in a simple manner.
  • drain electrode of the FET is connected to the minus input of an operational amplifier, the output signal of which is fed back via a feedback resistor to the minus input of the operational amplifier.
  • connection of an operational amplifier according to the invention and the specified circuit of the same in connection with the FET makes it possible to use the operational amplifier stabilization, which results in an attenuation of 80 to 100 dB.
  • the drain voltage of the FET is automatically kept stable without additional circuitry for screening and there is therefore practically no reaction on the gate electrode of the FET.
  • the operational amplifier circuit therefore automatically regulates all fluctuations in the mains voltage, the drain voltage of the FET remains constant, and this also results in an undisturbed useful signal or an undisturbed signal voltage.
  • the operational amplifier in the circuit arrangement according to the invention is not connected as a voltage amplifier, but rather as a current amplifier, as a result of which fluctuations at the minus input of the operational amplifier and thus at the drain electrode of the FET are suppressed, with the result that interference effects on the gate -Electrode of the FET does not occur.
  • C-MOS operational amplifiers are particularly suitable for this purpose.
  • the use of less high-impedance operational amplifiers is also possible, in particular if the operating voltage is additionally sieved with a sieve factor of 20 to 30 dB, for example using an upstream power supply unit.
  • a particularly advantageous embodiment of the invention consists in that the source electrode of the FET is provided with a constant current by means of a constant current source.
  • the DC value of the output signal can be kept constant by using a constant current source.
  • Another very advantageous possibility in connection with the present invention is to supply the constant current source with the output signal of the operational amplifier as a control signal.
  • the output signal of the operational amplifier is thus fed back via the constant current source, so that the output voltage or the quiescent current value of the output voltage is kept stable.
  • Another embodiment of the invention is to design the constant current source as a feedback quadrupole. It is particularly advantageous to provide an integration element for damping the useful signal in connection with the feedback quadrupole. This ensures that the entire circuit is operated in idle amplification.
  • An embodiment in which the feedback quadrupole has an attenuator whose attenuation factor is regulated in proportion to the overall gain of the detector circuit arrangement is also advantageous. In this way, a constant amplification of the useful signal is ensured with the exclusion of manufacturing, component, temperature and other tolerances.
  • the circuit arrangement can be produced particularly cost-effectively, since the simplest components with large tolerances can be used and still no adjustment is necessary.
  • Circuit parts and components which correspond to FIGS. 2 to 4 chen, are provided with the same reference numerals.
  • the gate electrode of a field effect transistor 2 is connected to a connection of a pyro element 1, the other connection of which is connected to ground or to the minus operating voltage source.
  • the source electrode of the FET 2 is connected via a resistor R 1 and a capacitor C 1 connected in parallel to this resistor R 1, also to ground or to the minus operating voltage terminal.
  • the drain electrode of the FET 2 is connected to the minus input of an operational amplifier 3, the plus input of which is connected to ground or to the minus operating voltage source via a capacitor C2.
  • the plus input of the operational amplifier 3 is provided with a reference voltage U Ref via a resistor R3.
  • the output signal S A of the operational amplifier 3 is fed back to the minus input of the operational amplifier 3 via a resistor R2.
  • the resistance R2 is preferably in the mega-ohm range. For example, it has a resistance value of 1 MOhm.
  • the operating voltage connections of the operational amplifier 3 are connected to the positive operating voltage terminal + U B or to the negative operating voltage terminal -U B or ground.
  • the output signal of the pyroelement 1 occurring at the drain electrode of the FET 2 is amplified in the operational amplifier 3, and this amplified signal is fed back via the feedback branch containing the resistor R2 to the minus input of the operational amplifier 3. Since the operational amplifier itself has a good sieving effect of approximately 80 to 100 dB for the supply voltage, this property of the operational amplifier is used in addition to the actual gain property for the useful signal in order to keep the drain voltage of the FET 2 stable. As a result, there is also no negative reaction from the drain electrode to the gate electrode, so that the useful signal cannot be negatively influenced.
  • the operational amplifier circuit regulates all fluctuations, so that the drain voltage remains completely constant. The useful signal is no longer subjected to voltage amplification, but rather to current amplification. As a result, the useful signal is free of fluctuations or interference components that may occur in the operating voltage.
  • the embodiment shown in Fig. 3 differs from the circuit arrangement in Fig. 2 only in that the existing from the resistor R1 and C1, in the source electrode branch of the FET 2 parallel circuit is now replaced by a constant current source 4. In this way, the direct current value of the useful signal S A can be kept constant even better.
  • a constant current source or a feedback quadrupole 5 is provided in the source electrode branch of the FET 2, instead of a grounded constant current source 4 or a parallel circuit comprising a resistor R1 and a capacitor C1, the or the output signal S A of the operational amplifier 3 is supplied as a control signal. That is, the constant current source is fed back by means of the DC output voltage of the operational amplifier 3 in such a way that the DC voltage or quiescent voltage value of the output signal remains stable.
  • the feedback quadrupole 5 can be designed, for example, in the form of an operational amplifier, transistor or current mirror circuit.
  • the output signal of the feedback constant current source or of the feedback quadrupole 5 can be amplified before being fed into the source electrode of the FET 2.
  • the integration element can be designed, for example, in the form of an operational amplifier with feedback via a capacitor. Furthermore, it is possible to design the feedback quadrupole as an attenuator whose attenuation factor is just as large as the total gain of the circuit arrangement should be.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Radiation Pyrometers (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Burglar Alarm Systems (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP86113333A 1985-10-19 1986-09-27 Circuit pour un détecteur à infrarouge pour contrôler des espaces Expired - Lifetime EP0220511B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3537316A DE3537316C1 (de) 1985-10-19 1985-10-19 Schaltungsanordnung fuer einen Infrarot-Raumueberwachungsdetektor
DE3537316 1985-10-19

Publications (3)

Publication Number Publication Date
EP0220511A2 true EP0220511A2 (fr) 1987-05-06
EP0220511A3 EP0220511A3 (en) 1987-10-07
EP0220511B1 EP0220511B1 (fr) 1991-02-06

Family

ID=6284011

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86113333A Expired - Lifetime EP0220511B1 (fr) 1985-10-19 1986-09-27 Circuit pour un détecteur à infrarouge pour contrôler des espaces

Country Status (4)

Country Link
US (1) US4827133A (fr)
EP (1) EP0220511B1 (fr)
JP (1) JPS62100626A (fr)
DE (2) DE3537316C1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104316174A (zh) * 2014-10-31 2015-01-28 成都中远信电子科技有限公司 一种红外线光电检测电路

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ220217A (en) * 1987-05-06 1991-03-26 Graydon Aubrey Shepherd Pyro-electric sensor circuit
JPH0530105Y2 (fr) * 1987-05-29 1993-08-02
US5034608A (en) * 1989-09-08 1991-07-23 Massachusetts Institute Of Technology Infrared sensor operable without cooling
DE19619459C2 (de) * 1996-05-14 2000-06-08 Heimann Optoelectronics Gmbh Schaltung zur Erfassung elektromagnetischer Strahlung
US6340816B1 (en) 1998-02-27 2002-01-22 Honeywell International, Inc. Pyroelectric detector with feedback amplifier for enhanced low frequency response
JP4257989B2 (ja) * 1998-10-19 2009-04-30 三菱電機株式会社 赤外線検出装置及びそれを用いた赤外線検出器アレイ
DE602004019898D1 (de) * 2003-04-07 2009-04-23 Microsystems On Silicon Pty Lt Sensorvorrichtung für die erfassung eines physikalischen parameters
WO2012002496A1 (fr) * 2010-07-01 2012-01-05 パナソニック電工株式会社 Dispositif de détection d'objets-cibles
JP2015049043A (ja) * 2013-08-29 2015-03-16 セイコーインスツル株式会社 赤外線検出装置
CN115291552A (zh) * 2022-08-25 2022-11-04 山西省农业机械发展中心 一种带智能保护的叶轮控制系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2113053A1 (de) * 1970-03-19 1971-09-30 Kureha Chemical Ind Co Ltd Verfahren und Vorrichtung zum Steuern eines elektrischen Stromkreises
US3944859A (en) * 1974-09-03 1976-03-16 Rca Corporation Bridge-balance detection circuit
US3987319A (en) * 1974-12-05 1976-10-19 The United States Of America As Represented By The Secretary Of The Army Radiation-activated sensor
US4101767A (en) * 1977-05-20 1978-07-18 Sensors, Inc. Discriminating fire sensor
US4367408A (en) * 1979-01-17 1983-01-04 Sanyo Electric Co., Ltd. Pyroelectric type infrared radiation detecting device
US4267468A (en) * 1979-04-23 1981-05-12 Motorola, Inc. Temperature sensing circuit
DE3404151A1 (de) * 1984-02-07 1985-08-08 Richard Hirschmann Radiotechnisches Werk, 7300 Esslingen Meldeeinrichtung
US4618770A (en) * 1985-03-21 1986-10-21 Rca Corporation Electrical controller having a window discriminator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104316174A (zh) * 2014-10-31 2015-01-28 成都中远信电子科技有限公司 一种红外线光电检测电路
CN104316174B (zh) * 2014-10-31 2016-06-29 国网山东省电力公司潍坊供电公司 一种红外线光电检测电路

Also Published As

Publication number Publication date
DE3677456D1 (de) 1991-03-14
EP0220511B1 (fr) 1991-02-06
US4827133A (en) 1989-05-02
JPS62100626A (ja) 1987-05-11
DE3537316C1 (de) 1987-03-12
EP0220511A3 (en) 1987-10-07
JPH054623B2 (fr) 1993-01-20

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