EP0251302A2 - Bain alcalin de dépôt chimique de cuivre - Google Patents
Bain alcalin de dépôt chimique de cuivre Download PDFInfo
- Publication number
- EP0251302A2 EP0251302A2 EP87109422A EP87109422A EP0251302A2 EP 0251302 A2 EP0251302 A2 EP 0251302A2 EP 87109422 A EP87109422 A EP 87109422A EP 87109422 A EP87109422 A EP 87109422A EP 0251302 A2 EP0251302 A2 EP 0251302A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- copper
- tetrakis
- ethylenediamine
- hydroxypropyl
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 36
- 229910052802 copper Inorganic materials 0.000 title claims description 36
- 239000010949 copper Substances 0.000 title claims description 36
- 238000007747 plating Methods 0.000 title description 2
- 239000000126 substance Substances 0.000 title 1
- 239000000080 wetting agent Substances 0.000 claims abstract description 20
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 7
- 150000003566 thiocarboxylic acids Chemical class 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001879 copper Chemical class 0.000 claims abstract description 5
- HRKQOINLCJTGBK-UHFFFAOYSA-N dihydroxidosulfur Chemical compound OSO HRKQOINLCJTGBK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims abstract description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 17
- 239000012279 sodium borohydride Substances 0.000 claims description 16
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 16
- 150000003475 thallium Chemical class 0.000 claims description 4
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims description 3
- -1 dimethylaminoborohydride Chemical compound 0.000 claims description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 abstract description 3
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 abstract description 3
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 14
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 14
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 11
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 8
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 3
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 3
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 3
- BCSZNBYWPPFADT-UHFFFAOYSA-N 4-(1,2,4-triazol-4-ylmethyl)benzonitrile Chemical compound C1=CC(C#N)=CC=C1CN1C=NN=C1 BCSZNBYWPPFADT-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- PVBRSNZAOAJRKO-UHFFFAOYSA-N ethyl 2-sulfanylacetate Chemical compound CCOC(=O)CS PVBRSNZAOAJRKO-UHFFFAOYSA-N 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 2
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- ODJQKYXPKWQWNK-UHFFFAOYSA-N 3,3'-Thiobispropanoic acid Chemical compound OC(=O)CCSCCC(O)=O ODJQKYXPKWQWNK-UHFFFAOYSA-N 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical class [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical class [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 239000003490 Thiodipropionic acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- KKAXNAVSOBXHTE-UHFFFAOYSA-N boranamine Chemical class NB KKAXNAVSOBXHTE-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical class OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical class OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002731 mercury compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SDWBRBLWPQDUQP-UHFFFAOYSA-N n-boranyl-n-methylmethanamine Chemical compound BN(C)C SDWBRBLWPQDUQP-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
Definitions
- the present invention relates to an alkaline external electroless copper bath containing copper salt, reducing agent, wetting agent, alkali hydroxide and complexing agent.
- Such alkaline copper baths without external current are known in a wide variety of compositions. However, they all tend to more or less uncontrolled precipitation of copper by disproportionation of the copper (I) compounds formed during the reduction to copper and copper (II) compounds.
- the object of the invention is therefore to develop an alkaline copper bath without external current, which is cyanide-free in all cases and, moreover, preferably also contains no formaldehyde.
- This new copper bath can therefore be used free of formaldehyde or with formaldehyde. In any case, it contains no cyanide. It is crucial that it contains the N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine as a complexing agent, a small amount of a gallium, indium and / or thallium salt and a thioalcohol or a thiocarboxylic acid.
- thioalcohol or thiocarboxylic acid 2,2-thiodiethanol, thioglycolic acid, mercaptosuccinic acid, thioacetic acid, thiodiglycolic acid, 3,3-thiodipropionic acid, 2-mercaptopropionic acid and 2-mercaptobenzoic acid.
- the thiocarboxylic acids can also be used in the form of their esters, since under the alkaline conditions the esters are rapidly saponified to give the acids.
- An easy to handle and therefore easy to use ester is e.g. the thioglycolic acid ethyl ester.
- the amount of copper salt is not particularly critical. It is preferably selected in the range from 4 to 6 g / l.
- the amount of reducing agent is also not critical. Quantities between 100 and 500 mg / l are preferably used.
- the amount of wetting agent is also not critical. However, fluorinated wetting agents such as perfluorocarboxylic acids, perfluorosulfonic acids and perfluorinated amines are preferably used. They are effective and stable even at high pH values.
- N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine is therefore essential to the invention.
- the amount should in particular be in the range between 6 and 50 g / l.
- 0.1 to 200 mg of a gallium, indium and / or thallium salt is also essential to the invention.
- the improvement effect does not yet occur below the limit of 0.1 mg. Amounts greater than 200 mg are unnecessary and also undesirable for reasons of cost and toxicity.
- the third component essential to the invention are the thioalcohols or thiocarboxylic acids. They contribute significantly to the effectiveness and stabilization of the new copper bath.
- the copper deposits deposited from the baths according to the invention have a light copper color. They are particularly suitable for metallizing holes in printed circuit boards.
- the non-conductive base material is usually activated with palladium chloride.
- the surface germinated with palladium is covered with copper so densely in 15 to 20 minutes that the so-called transmitted light test is fully fulfilled. It is crucial that the copper layers obtained with the copper bath according to the invention have optimal adhesive strength and functionality for the subsequently applied metallic reinforcements.
- An alkaline copper bath without external current contains the following components: Copper sulfate 4 g / l Mercaptosuccinic acid 250 mg / l N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine 6 g / l Sodium borohydride 300 mg / l Thallium nitrate 10 mg / l fluorinated wetting agent 10 mg / l
- Another copper bath consists of: Copper sulfate 4 g / l Thioacetic acid 150 mg / l N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine 8 g / l Sodium borohydride 150 mg / l Thallium nitrate 2 mg / l fluorinated wetting agent 5 mg / l
- Another copper bath consists of: Copper sulfate 6 g / l Thioglycolic acid 500 mg / l N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine 18 g / l Thallium nitrate 5 mg / l fluorinated wetting agent 25 mg / l Sodium borohydride 500 mg / l
- Another copper bath consists of: Copper sulfate 4 g / l N, N, N ⁇ , N ⁇ -tetrakis (2-hydroxypropyl) ethylenediamine 12 g / l fluorinated wetting agent 20 mg / l Indium (as indium sulfamate) 50 mg / l Thioglycolic acid ethyl ester 350 mg / l Sodium borohydride 700 mg / l
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3622090 | 1986-07-02 | ||
| DE19863622090 DE3622090C1 (fr) | 1986-07-02 | 1986-07-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0251302A2 true EP0251302A2 (fr) | 1988-01-07 |
| EP0251302A3 EP0251302A3 (fr) | 1988-07-27 |
Family
ID=6304162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP87109422A Withdrawn EP0251302A3 (fr) | 1986-07-02 | 1987-06-30 | Bain alcalin de dépôt chimique de cuivre |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0251302A3 (fr) |
| DE (1) | DE3622090C1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1411147A1 (fr) * | 2002-10-18 | 2004-04-21 | Shipley Co. L.L.C. | Procédé et solution de placage sans courant de cuivre exempt de formaldehyde |
| EP1286576A3 (fr) * | 2001-08-21 | 2004-12-29 | Shipley Company LLC | Procédé de fabrication d'un matériau composite de cuivre-résine |
| CN100402700C (zh) * | 2002-11-20 | 2008-07-16 | 希普雷公司 | 无甲醛化学镀铜方法及该方法中使用的溶液 |
| US7892413B2 (en) | 2006-09-27 | 2011-02-22 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US8425753B2 (en) | 2008-05-19 | 2013-04-23 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419926A (en) * | 1993-11-22 | 1995-05-30 | Lilly London, Inc. | Ammonia-free deposition of copper by disproportionation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1254935B (de) * | 1960-12-31 | 1967-11-23 | Bayer Ag | Waessriges Bad zur chemischen Abscheidung von borhaltigen Metallueberzuegen |
| DE1243493B (de) * | 1961-02-04 | 1967-06-29 | Bayer Ag | Waessriges Bad zur chemischen Abscheidung von borhaltigen Metallueberzuegen |
| US3361580A (en) * | 1963-06-18 | 1968-01-02 | Day Company | Electroless copper plating |
| US3377174A (en) * | 1963-10-24 | 1968-04-09 | Torigai Eiichi | Method and bath for chemically plating copper |
| US3403035A (en) * | 1964-06-24 | 1968-09-24 | Process Res Company | Process for stabilizing autocatalytic metal plating solutions |
| US3607317A (en) * | 1969-02-04 | 1971-09-21 | Photocircuits Corp | Ductility promoter and stabilizer for electroless copper plating baths |
| US3649308A (en) * | 1970-05-21 | 1972-03-14 | Shipley Co | Stabilized electroless plating solutions |
| US3959531A (en) * | 1971-04-23 | 1976-05-25 | Photocircuits Corporation | Improvements in electroless metal plating |
| US3902907A (en) * | 1973-08-17 | 1975-09-02 | Kazutaka Kishita | System for electroless plating of copper and composition |
| NL7402422A (nl) * | 1974-02-22 | 1975-08-26 | Philips Nv | Universele verkoperingsoplossing. |
| US4124399A (en) * | 1977-09-13 | 1978-11-07 | Shipley Company Inc. | Stabilized electroless plating solutions |
| US4189324A (en) * | 1978-06-02 | 1980-02-19 | Michael Gulla | Stabilized electroless plating solutions |
| US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
| IT1157006B (it) * | 1982-03-09 | 1987-02-11 | Alfachimici Spa | Miscela stabilizzante per un bagno di rame chimico |
-
1986
- 1986-07-02 DE DE19863622090 patent/DE3622090C1/de not_active Expired - Fee Related
-
1987
- 1987-06-30 EP EP87109422A patent/EP0251302A3/fr not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1286576A3 (fr) * | 2001-08-21 | 2004-12-29 | Shipley Company LLC | Procédé de fabrication d'un matériau composite de cuivre-résine |
| EP1411147A1 (fr) * | 2002-10-18 | 2004-04-21 | Shipley Co. L.L.C. | Procédé et solution de placage sans courant de cuivre exempt de formaldehyde |
| CN100402700C (zh) * | 2002-11-20 | 2008-07-16 | 希普雷公司 | 无甲醛化学镀铜方法及该方法中使用的溶液 |
| US7892413B2 (en) | 2006-09-27 | 2011-02-22 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US8425753B2 (en) | 2008-05-19 | 2013-04-23 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3622090C1 (fr) | 1990-02-15 |
| EP0251302A3 (fr) | 1988-07-27 |
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Legal Events
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| 17P | Request for examination filed |
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| 17Q | First examination report despatched |
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| STAA | Information on the status of an ep patent application or granted ep patent |
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| 18D | Application deemed to be withdrawn |
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| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BREIDENBACH, HERBERT Inventor name: HUPE, JUERGEN, DR. Inventor name: KRONENBERG, WALTER, DR. Inventor name: KNAAK, EBERHARD |