EP0304201A1 - Procédé de production de films composites à base de diamant, de diamant dopé et de diamant-nitrure de bore cubique - Google Patents

Procédé de production de films composites à base de diamant, de diamant dopé et de diamant-nitrure de bore cubique Download PDF

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Publication number
EP0304201A1
EP0304201A1 EP88307269A EP88307269A EP0304201A1 EP 0304201 A1 EP0304201 A1 EP 0304201A1 EP 88307269 A EP88307269 A EP 88307269A EP 88307269 A EP88307269 A EP 88307269A EP 0304201 A1 EP0304201 A1 EP 0304201A1
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European Patent Office
Prior art keywords
diamond
carbon
hydrogen
substrate
process according
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Withdrawn
Application number
EP88307269A
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German (de)
English (en)
Inventor
Chandra V. Desphandey
Rointan F. Bunshah
Han J. Doerr
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University of California Berkeley
University of California San Diego UCSD
University of California Los Angeles UCLA
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University of California Berkeley
University of California San Diego UCSD
University of California Los Angeles UCLA
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Publication of EP0304201A1 publication Critical patent/EP0304201A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Definitions

  • This invention relates to the process of depositing diamond, doped diamond and cubic boron nitride-diamond composite films. More specifically it relates to deposition of these films at high rates over large areas, based on Activated Reactive Evaporation (ARE) as first described in U.S. Patent No. 3,791,852.
  • ARE Activated Reactive Evaporation
  • CVD chemical vapor deposition
  • PAVD plasma assisted chemical vapor deposition
  • Diamond microcrystals were prepared using chemical vapor deposition and related techniques, at low pres­sures for the first time by Derjaguin and co-workers(1) by a chemical transport method. Subsequently Angus et al.(2) reported deposition of diamond onto natural diamond powder from methane gas at 1050°C and 0.3 torr pressure. They also proposed a qualitative mode explaining the kinetics of diamond growth from the vapor phase. More recently Matsumoto et al.(3,4), have reported synthesis of diamond microcrystals by chemical vapor deposition from a mixture of methane and hydrogen gas in open flow systems. They have shown that the growth of diamond films can be enhanced if a heated tungsten filament is used in the CVD set up. Spitsyn et al.(5) in their paper have discussed the kinetics of diamond growth from CH4 + H2 gas mixtures. They have argued that atomic hydrogen plays a unique role in the growth of diamond from vapor phase.
  • Whitmell et al.(6) were the first to report the use of plasma decomposition techniques in the deposition of amorphous carbon-like films onto a negatively biased d.c. electrode using methane gas.
  • the growth of films in their earlier experiment was thickness limited. This was believed to be due to the formation of an insulating film (i-C) on the surface of the d.c. biased electrode which after a critical thickness was reached, prevented the bombardment of the growing film with energetic ions from the plasma.
  • Holland (7) proposed a modification where an r.f. potential was applied to the electrode to achieve a constant film bombardment during growth. Using this technique Holland et al.(8,9) successfully deposited diamond-like carbon films on a variety of substrates.
  • the remote plasma deposition technique developed by Lucovsky et al.(12) also falls under the category of a PACVD type process.
  • a mixture of reactive and inert gas is dissociated using r.f. excitation.
  • the activated species, e.g., oxygen, from the plasma react down stream with the process gas such as SiH4 (for SiO2 deposition) to form complexes such as H3Si-O-SiH3 in the gas phase which subsequently condense on the substrate. Bombardment by energetic neutrals dissociate the complex to produce the compound films.
  • This technique has been successfully used by Richard et al.(13) to prepare SiO2, Si3N4 at low deposition temperatures. They have proposed to extend this technique to the deposition of diamond by using CH4 as a process gas and H2 or a H2 + He gas mixture for activa­tion.
  • Aisenberg and Chabot(14) were the first to report deposition of diamond-like carbon films by ion-beam deposition of carbon. Attempts to deposit similar films using magnetron sputtering and r.f. sputtering were only partially successful. It is likely that negligible substrate bombardment in the case of magnetron sputter­ing and substrate overheating in case of r.f. sputtering may have restricted the formation of i-C films in the above two techniques.
  • weissmantel(15,16) has proved to be quite successful in synthesis of diamond-like carbon films. He used a primary beam to deposit carbon with the growing film being simultaneously bombarded by Ar+ ions generated from the second ion source. Weissmantel has success­fully used this technique to deposit i-C, i-BN as well as i-C/i-BN composite coatings.
  • the rate of deposition of the carbon films critically depends on the rate of dissociation of the hydrocarbon gas.
  • the rate of dissociation rate one has to increase the gas pressure and/or the r.f. power used to excite the plasma.
  • the increase in r.f. power also increases the energy of the bombarding species.
  • increased dissociation of hydrocarbon gas produces a greater amount of hydrogen that can be trapped into the growing films - thereby producing excessive stress in the film.
  • the ion beam technique provides advantages as regards independent control of substrate bombardment, deposition rate and hydrogen content, it suffers from the following two major limitations: 1) low deposition rates due to the low sputtering yield of carbon; and 2) limitations for large area deposition due to limitations in the available sizes of the ion sources.
  • Strel′nitskii et al.(23) have reported deposition of i-C films using energetic C+ ions from an arc source.
  • This invention provides an improved method of synthesis of diamond films on a suitable substrate using plasma assisted physical vapor deposition techniques.
  • the method is based on controlling the plasma chemistry in the reaction zone between the source of carbon and the substrate.
  • Graphite or other material used as a source for carbon is vaporized in the vacuum chamber using an electron beam, or cathodic arc to provide carbon vapors in the reaction zone. Hydrogen containing gas is introduced into the reaction zone. Gas activation as well as carbon vapor activation is achieved using a filament/anode geometry, where electrons emitted thermionically from a heated tungsten filament are accelerated towards a positively biased electrode. It is believed that the atomic hydrogen produced by electron collision with molecular hydrogen plays a crucial role in synthesis of the diamond. Atomic hydrogen thus produced enhances the evaporation rate of carbon by producing volatile carbon-hydrogen complexes at the surface of the carbon evaporation source.
  • This reaction is stimulated by the electrons bombarding or near to the carbon source. Collision between atomic hydrogen and the evaporated carbon and/or carbon-­hydrogen molecules is believed to produce molecular precursors which are responsible for the synthesis and depositing of diamond films on the substrate.
  • microstructure of the diamond deposit and therefore its physical and mechanical properties can be varied by changing substrate temperature and substrate bombardment.
  • An important advantage of the above process results from its ability to control the plasma volume chemistry independent of the source and substrate reactions. This makes it possible to obtain high deposition rates and also better control over the film properties.
  • the single figure of the drawing is a schematic vertical sectional view of a vacuum chamber and associated equipment suitable for performing the process of the invention and incorporating the presently preferred embodiment of the apparatus of the invention.
  • the preferred apparatus for carrying out the process of the present invention is a modification of the apparatus disclosed in U.S. Patent No. 3,791,852, for carrying out Activated Reactive Evaporation (ARE) and the apparatus described by Chopra et al.(22) for carrying out Activated Dissociation Reduction Reaction processes, the contents of which are hereby incorporated by reference.
  • the apparatus includes a vacuum chamber which may comprise a conventional cover or dome 10 resting on a base 11 with a sealing gasket 12 at the lower rim of the cover 10.
  • a support and feed unit 13 for a source carbon rod used for evaporation 14 may be mounted in the base 11.
  • the unit 13 includes a mecha­nism (not shown) for moving the carbon rod 14 upward at a controlled rate.
  • Cooling coils 15 may be mounted in the unit 13 and supplied with cooling water from a cooling water source, 16.
  • An electron gun 20 is mounted in unit 13 and provides an electron beam along the path 21 to the upper surface of the carbon rod 14, with the electron gun being energized from a power supply 22.
  • a substrate 24 on which the diamond film is to be deposited is supported in a frame 25 on a rod 26 projecting upward from the base 10.
  • the substrate 24 may be heated by an electric resistance heater 27 supported on a bracket 28.
  • Energy for the heater 27 is provided from a power supply 29 via a cable 30.
  • the temperature of the substrate 24 is maintained at a desired value by means of a thermocouple 32 in contact with the upper surface of the substrate 24, with the thermocouple connected to a controller 33 by line 34, with the controller output signal regulating the power from the supply 29 to the heater 27.
  • the desired low pressure is maintained within the vacuum chamber by a vacuum pump 36 connected to the interior of the chamber via a line 37.
  • Gas from a gas supply 39 is introduced into the zone between the carbon rod 14 and substrate 24 via a line 40 and nozzle 41.
  • a shutter 43 is mounted on a rod 44 which is manually rotable to move the shutter into and out of position between the carbon rod 14 and substrate 24.
  • a tungsten filament 46 is supported from the base 11 in the reaction zone between the source 14 and the substrate 24.
  • the filament 46 is thermionically heated using a supply 47 via line 48.
  • An anode, typically a metal plate 49, is supported from base 11 opposite to the filament 46.
  • An electric potential is provided for the anode 49 from a voltage supply 50 via line 51.
  • the evaporation chamber 10 is preferably a 24 inch diameter and 35 inch high water cooled stainless steel bell jar.
  • the vacuum pump is preferably a 10 inch diameter fractionating diffusion pump, with an anti-migration type liquid nitrogen trap.
  • the source carbon unit 13 is preferably 1 inch diameter rod fed electron beam gun, self-­accelerated 270° deflection type, such as Airco Temescal Model RIH-270.
  • the power supply 22 is preferably an Airco Temescal Model CV30 30kW unit which may be operated at a constant voltage such as 10 kilovolts, with a variable emission current.
  • substrates can be utilized.
  • Various substrates such as stainless steel, molybdenum, glass, quartz, silicon etc. have been used.
  • the substrate is based about 8′′ above the surface of the carbon source 14.
  • the heater 27 may be a 4 kilowatt tungsten resistance heater providing for heating the substrate to 700°.C and higher. Temperatures in the range of 600 to 1000°C are preferr­ed.
  • the reactions that produce molecular precursors required for synthesis of diamond film take place primarily in the vapor phase in the reaction zone and/or on the surface of the carbon evaporation source. These reactions are independent of substrate temperature. However, as discussed below the properties and structure of the film is dependent on substrate temperature and bombardment.
  • the source of carbon may be a solid rod or billet.
  • the rod is 0.975 inches diameter and 6′′ long.
  • Appropriate alloys can be used to obtain p or n type doping in the films.
  • An arc source can also be used to provide carbon vapors.
  • Hydrogen gas which dissociates to form atomic hydrogen is introduced via a series of needle valves.
  • the preferred range of pressure is 2 x 10 ⁇ 4 to 20 x 10 ⁇ 3 torr.
  • hydrocarbon gases such as methane, ethane, etc. can be used to provide atomic hydrogen and the molecular fragments necessary for diamond growth. Mixtures of the above gases with hydrogen are also used.
  • argon has also been used with hydrogen and/or hydrocarbon gases to enhance the plasma volume chemistry in the region between the source and the substrate and to increase the density of precursors necessary for the growth of diamond films.
  • the filament 46 provides electrons for dissociating and ionizing the gases and the evaporated carbon vapor.
  • the filament 46 is thermionically heated using a d.c. supply 47.
  • A.C. can also be used for heating the filament.
  • the electrons emitted from the heated filament 46 are accelerated to an anode 49, to which a d.c. potential is applied from a d.c. supply 50.
  • the usual potential is in the range of about 80 volts, however higher voltages may be used if desired, by using a R.F. plasma Therm d.c. power supply.
  • An a.c. poten­tial as well as r.f. excitation with effective d.c. bias in similar voltage range has also been used.
  • diamond films can be produced by using the above apparatus utilizing carbon evaporation in H2, CH4, H2 + CH4, H2 + Ar, H2 + Ar + CH4 gases and gas mixtures.
  • Doped diamond films are also possible. Boron is an excellent p-type dopant for diamond.
  • Al and Li can be used. Boron doped films can be prepared by evaporating carbon in a plasma of Ar + CH4 (or Ar + CH4 + H2 or any other hydrocarbon gas preferab­ly with SP3 bonding) and boron containing gas such as B2H6.
  • Ar + CH4 Ar + CH4 + H2 or any other hydrocarbon gas preferab­ly with SP3 bonding
  • boron containing gas such as B2H6.
  • metal-organic compounds such as trimethyl aluminum vapors can be used.
  • lithium doping Li can be co-evaporated with carbon in Ar + CH4 plasma.
  • Cubic boron nitride (CBN)-diamond composite films can be prepared by co-evaporating Boric acid/boric oxide and carbon in CH4 + N2/CH4 +H2 plasma.
  • the possible reactions leading to the formation of the CBN-­diamond composite films are: B02 + C ⁇ B + CO CH4 ⁇ C + CH x + H H + B02 ⁇ B + H B + N ⁇ BN C + C + H ⁇ C - C + H CH x + CH x + H ⁇ C - C + H
  • the filament 46 was slowly heated to the desired temperature of about 1000°C.
  • One of the above gases was then introduced in the vacuum chamber at a controlled rate to obtain a desired pressure. Pressure ranged from 2 x 10 ⁇ 2 torr to about 1 x 10 ⁇ 3 torr.
  • Anode potential was then applied to obtain required anode current.
  • the electron beam was turned on to heat the upper end of the carbon rod 14.
  • the shutter 43 was in position blocking the substrate 24. When steady state conditions were obtained, the shutter 43 was moved to one side and films were deposited on the substrate 24. The process was continued until the desired thickness of film was obtained after which the shutter 43 was moved to the blocking position and the various supplies were turned off.
  • the gas pressure within the chamber, the anode potential and electron beam current required to produce the diamond films are interrelated and may be varied over a substantial range. With higher electron beam currents it is required to increase the partial pressure of hydrogen gas and the anode potential to obtain desired films. For example, successful formation of diamond films can be achieved in the range of 600 watts - 1.5 kw with gas partial pressure in the range of 10 ⁇ 3 to 2 x 10 ⁇ 2 torr.
  • H2, CH4, H2 + CH4, Ar + CH4, Ar + H2 + CH4 gases have been used.
  • Use of hydrocarbon gas such as CH4 and its mixture with H2 and/or Ar enhance the electron-­molecular reactions producing appropriate precursors necessary for growth of diamond films.
  • the acts of precursor formation and deposit growth are separate steps in this process.
  • the character of the deposit changes with substrate temperature and bombardment. For given conditions the deposit trans­forms from transparent/insulating type to absorbent/con­ducting type back to .transparent/insulating type with increasing substrate temperature.
  • the above transforma­tion corresponds to the formation of diamond-like i-C films, graphitic films, diamond films, respectively.
  • the film growth is essen­tially controlled by the reaction occurring in the region between the source and the substrate.
  • the film properties can be controlled by changing the partial pressure of reactive gas, evaporation rate and substrate temperature/bombard­ment.
  • a carbon evaporation rate of 0.2 gms/min and a hydrogen partial pressure of 10 millitorr
  • transparent and insulating films of diamond are deposited at a ate of 3 um/hr at source-to-substrate distance of 8′′.
  • Higher deposition rates could be achieved by adjusting the electron beam current and H2 partial pressure appropriately or decreasing the source to substrate distance. Higher or lower rates may be obtained by varying the process parameters of the system.
  • the carbon evaporation rate may be controlled by varying output of electron gun 20 and gas pressure may be controlled by adjusting a valve 59 in the gas line 40.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
EP88307269A 1987-08-19 1988-08-05 Procédé de production de films composites à base de diamant, de diamant dopé et de diamant-nitrure de bore cubique Withdrawn EP0304201A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/087,141 US4816291A (en) 1987-08-19 1987-08-19 Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
US87141 1987-08-19

Publications (1)

Publication Number Publication Date
EP0304201A1 true EP0304201A1 (fr) 1989-02-22

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EP88307269A Withdrawn EP0304201A1 (fr) 1987-08-19 1988-08-05 Procédé de production de films composites à base de diamant, de diamant dopé et de diamant-nitrure de bore cubique

Country Status (8)

Country Link
US (1) US4816291A (fr)
EP (1) EP0304201A1 (fr)
JP (1) JPS6472993A (fr)
KR (1) KR890003982A (fr)
BR (1) BR8804197A (fr)
CA (1) CA1329791C (fr)
IL (1) IL87406A0 (fr)
ZA (1) ZA885917B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
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EP0360994A1 (fr) * 1988-09-20 1990-04-04 International Business Machines Corporation Dispositif et procédé pour la production de films de diamant à basse température
FR2649724A1 (fr) * 1989-05-10 1991-01-18 Inst Elektroswarki Patona Procede d'obtention de materiaux carbones par vaporisation sous vide
GB2361051A (en) * 2000-04-04 2001-10-10 Applied Materials Inc Vaporiser for generating feed gas

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US5190824A (en) 1988-03-07 1993-03-02 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating
US6224952B1 (en) * 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
JPH01301864A (ja) * 1988-05-31 1989-12-06 Hoya Corp ガラス成形型の製造方法
EP0588449B1 (fr) * 1988-12-27 1997-08-06 Canon Kabushiki Kaisha Appareil émetteur de lumière au moyen d'un champ électique
US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
JPH02192494A (ja) * 1989-01-20 1990-07-30 Sumitomo Electric Ind Ltd 複合材料
IL93399A (en) * 1989-02-16 1994-06-24 De Beers Ind Diamond Epithelium of a diamond or a layer of diamond figures
US5051785A (en) * 1989-06-22 1991-09-24 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
US4961958A (en) * 1989-06-30 1990-10-09 The Regents Of The Univ. Of Calif. Process for making diamond, and doped diamond films at low temperature
US4953499A (en) * 1989-08-03 1990-09-04 General Electric Company Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means
EP0420188A1 (fr) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Structure semi-conductrice à hétérojonction
US5082359A (en) * 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
US5075094A (en) * 1990-04-30 1991-12-24 The United States Of America As Represented By The Secretary Of The Navy Method of growing diamond film on substrates
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US5232568A (en) * 1991-06-24 1993-08-03 The Gillette Company Razor technology
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US5669144A (en) * 1991-11-15 1997-09-23 The Gillette Company Razor blade technology
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US5295305B1 (en) * 1992-02-13 1996-08-13 Gillette Co Razor blade technology
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WO1995027806A1 (fr) * 1994-04-06 1995-10-19 The Regents Of The University Of California Procede de production de couches minces de diamant
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US4816291A (en) 1989-03-28
BR8804197A (pt) 1989-03-14
ZA885917B (en) 1989-04-26
IL87406A0 (en) 1989-01-31
CA1329791C (fr) 1994-05-24
KR890003982A (ko) 1989-04-19

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