EP0367762A1 - Agencement de structuration par photolithographie et son procede de fabrication - Google Patents

Agencement de structuration par photolithographie et son procede de fabrication

Info

Publication number
EP0367762A1
EP0367762A1 EP19880902438 EP88902438A EP0367762A1 EP 0367762 A1 EP0367762 A1 EP 0367762A1 EP 19880902438 EP19880902438 EP 19880902438 EP 88902438 A EP88902438 A EP 88902438A EP 0367762 A1 EP0367762 A1 EP 0367762A1
Authority
EP
European Patent Office
Prior art keywords
layer
photoresist
absorption
layers
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19880902438
Other languages
German (de)
English (en)
Inventor
Wolfgang Bartsch
Stephani Dietrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0367762A1 publication Critical patent/EP0367762A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Definitions

  • the invention relates to an arrangement for structuring by means of photolithography with a two-layer system of photoresist layers, which are each applied in succession with a predetermined thickness.
  • these photoresist layers contain a polymer and a photoactive compound serving as an inhibitor, the absorption capacity of which is determined as a function of the exposure energy according to factors.
  • This two-layer system is suitable for manufacturing thin-film magnetic heads and, for example, for vanic processes in microelectronics.
  • the photoresists belong to the class of positive resists, which are based on diazoquinones or related compounds as inhibitors and novolaks as base polymers.
  • the absorption capacity of these photoresists results - depending on the exposure energy - from the analysis from a factor A for a light-dependent absorption and a factor B for a light-independent absorption as well as a factor C for its optimal sensitivity (Dill in IEEE Transact. on El..Devices Vol. ED-22, No. 7, July 1975, pp. 445-452).
  • the mask on the steps can be under-irradiated during exposure due to diffraction and interference effects.
  • the dimensional accuracy of the desired structure can therefore only be set with a relatively large amount of work.
  • the different lacquer layer thicknesses at the stages result due to the different
  • a two-layer system in which a photo-resist layer is also provided with an additional CEM layer (contrast enhanced aterial). Mixing of the two layers is prevented by an additional barrier layer.
  • an intermediate layer of approximately 850 to 2300 S serving as a barrier layer can be provided, for example. This intermediate layer also prevents the photoresist layer from being attacked by the solvent development with which the CEM layer has to be removed again.
  • a positive photoresist can be spun on and structured for structuring layers by means of photolithography.
  • SPARE BLADE finally dried (soft bake) at a relatively low temperature of around 90 to 100 ° C.
  • the photoresist is then exposed with a mask corresponding to the desired structure.
  • the energy supplied with the exposure is adapted to the thickness and the properties of the lacquer layer. For example, an energy of approximately 50 to 150 mJ / cm 2 is supplied for a 1 to 2 ⁇ m thick photo lacquer layer.
  • a different thickness of the lacquer layer at the stages of the material to be structured also requires a corresponding change in the exposure energy supplied. For example, an exposure energy of 500 to 1000 mJ / cm 2 would be required for a lacquer layer with a thickness of approximately 16 ⁇ m at one step.
  • the invention is based on the object of specifying an arrangement for structuring by photolithography with photoresist which is suitable for high levels with good contrast.
  • the photoresist layer thickness remaining after development depends on the exposure energy.
  • the exposure and the development must therefore be coordinated so that a predetermined layer thickness of the photoresist remains after the development.
  • a photoresist layer with a thickness of, for example, 0.4 ⁇ m is completely coated with the development in an alkaline medium after exposure to 100 mJ / cm 2 .
  • REPLACEMENT LEAF solves. This must be taken into account in the exposure through a mask, since under-irradiated areas are also developed further. A change in the distribution of the photoactive compound both within the photoresist layer in accordance with the absorption capacity and in a lateral direction parallel to the mask plane in accordance with the under radiation is thus obtained after exposure through a predetermined mask.
  • the above-mentioned object is now achieved according to the invention with the characterizing features of claim 1.
  • the lower photoresist layer with low absorption and high molecular weight means that the relatively high level is somewhat planarized without this layer losing photosensitivity, since only relatively low soft beacon Temperatures of preferably 100 to 110 * C are required to dry this first layer.
  • the second photoresist layer with high absorption and lower molecular weight is applied in accordance with the layer thickness of this photoresist layer which occurs at the step, the layer thickness to be set of this second photoresist layer being measured for the pure transmission required for development given the absorption capacity of both materials .
  • the different absorption of the two photoresist layers is obtained from the ratio of the absorption coefficients in the unexposed state.
  • This ratio (A + B) of the upper layer / (A + B) of the lower layer is at least 1.5. In a preferred embodiment it is at least 2, but we do not significantly exceed 3.
  • the ratio of the molecular weights MW of both photoresist layers MW upper layer / MW. bottom layer is at least 1.2. In a preferred embodiment, it is about 1.8; however, it will not significantly exceed a factor of 3.
  • REPLACEMENT LEAF A barrier layer between the two photoresist layers is not necessary because of the different molecular weights. This two-layer system does not lose any sensitivity to light; for example, for a composite with a total thickness of 7.5 ⁇ m, only a low exposure energy of about 370.mJ / cm 2 is required. It also has the particular advantage that after exposure through a given mask, both layers can be developed in a common development process using a single alkaline medium.
  • FIG. 1 shows a section through part of a two-layer system according to the invention.
  • FIG. 2 shows the absorption of various photoresists as a function of the energy radiation in a diagram.
  • the surface of a substrate 2 is provided in a predetermined region, which is not limited in the figure, with a surface layer 4, for example a metal layer, to be structured by photolithography, which is applied over a step with a height H of, for example, 20 ⁇ m.
  • the surface is covered with a first photoresist layer 6 with low absorption but high molecular weight.
  • the step gives this first photoresist layer 6 a different thickness.
  • the thickness a at the foot of the step may be approximately 16 ⁇ m, while the thickness b in the areas above the step and next to the step is approximately 8 ⁇ m and the thickness c at the beginning of the waste flank, which is not described in any more detail is about 3 to 4 ⁇ m. This achieves a certain planarization of the relatively large level.
  • This photoresist layer 6 is provided in the same way with a further photoresist layer 8 with high absorption and a lower molecular weight.
  • the thickness of this second photoresist layer is provided in the same way with a further photoresist layer 8 with high absorption and a lower molecular weight.
  • REPLACEMENT LEAF 8 is chosen so that the ratio of the layer thickness of the lower photoresist layer 6 to the layer thickness of the upper photoresist layer 8 - measured in the plane - is preferably between 0.7 and 4.
  • the layer thickness is determined by the height of the step, the layer thickness distribution of the lower layer at points a, b, and c, and by the pure transmission required for development with the greatest possible gain in contrast.
  • the thickness of the second photoresist layer 8 with large absorption is preferably substantially less than the thickness of the first photoresist layer 6 with less absorption is .and vor ⁇ preferably at most half the thickness of the lower Fotolack ⁇ layer 6 and may be the entire area at the points a 2 » B 2 and c 2 are, for example, approximately 4 ⁇ m.
  • the two layers 6 and 8 have different molecular weights. They differ by a factor
  • V and preferably at least K> 2, where d is the layer thickness in ⁇ m, n is the rotational speed / min during spin coating and V is the solids content of the layer specified by the manufacturer in%.
  • the first photoresist layer 6 can preferably be spun on at a speed of about 3000 rpm. Subsequently, the first layer 6 is Fotolack ⁇ at a temperature of about 70 "C to 180 * C., preferably from about 90 * C to 120 * C, for a period of 60 min to about 2, preferably about 5 min to 15
  • the second photoresist layer 8 can preferably be applied in the same way and is then also used at a temperature.
  • REPLACEMENT LEAF temperature of about 70 ° C to 110'C, preferably at a temperature of 90 ⁇ C to 100'C, for a time of about 2 to 60 min, preferably about 5 to 15 min, dried.
  • the photoresist layers 6 and 8 can also be applied by spray painting, dip coating or by so-called roller painting.
  • the exposure is carried out with an energy of, for example, approximately 550 mJ / cm 2 to 1300 mJ / cm 2 in the contact, proximity or projection exposure method.
  • the development in an alkaline medium with a pH of, for example, about 10 to 14 takes place depending on the total layer thickness and exposure over a time of about 60 to 360 s.
  • the absorption per ⁇ m layer thickness is plotted as a function of the incident energy E on a rithmic scale for two different photoresists with different layer thicknesses of the lacquers. From the kung curves (bleaching curves) it can be seen that the absorption of the various photoresists in the region of low energy radiation remains approximately the same according to the absorption coefficient A + B, then according to its optical sensitivity according to a sensitivity factor C which decreases in contrast to the known one Sensitivity factor C (na Dill) is influenced by the layer thickness, and then only slightly absorbed at high energy radiation according to the absorption coefficient.
  • the layer thicknesses of the two materials are chosen in accordance with their known absorption capacity, so that those indicated in dash-dot lines in the diagram
  • REPLACEMENT LEAFS Slopes in area C differ significantly from each other. This ensures that the slope of the action curve of the composite of two photoresists according to the invention is increased in region C in comparison to the slope of the action curve of the lower photoresist layer, which serves as a mask in the subsequent etching process of the surface layer 4. According to the diagram, a contrast-enhanced lacquer profile is thus obtained from the photoresist layers 6 and 8 after the development process of the two-layer system.

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Un agencement contient un système à deux couches comprenant des couches de laque photosensible (6, 8) d'épaisseur prédéterminée. Ces couches contiennent dans un solvant organique un polymère et un composé photoactif inhibiteur dont la capacité d'absorption est déterminée par les facteurs A, B et C. Une couche inférieure épaisse (6) à capacité d'absorption réduite est surmontée d'une couche supérieure mince (8) à capacité d'absorption élevée et avec un poids moléculaire différent. La capacité d'absorption des deux couches de laque photosensible étant connue, leur épaisseur est fonction d'une capacité de transmission pure déteminée. Ce système à laque photosensible permet en particulier de réaliser des changements topographiques importants à la surface d'un substrat ayant des structures très fines.
EP19880902438 1987-06-10 1988-02-26 Agencement de structuration par photolithographie et son procede de fabrication Withdrawn EP0367762A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3719371 1987-06-10
DE3719371 1987-06-10

Publications (1)

Publication Number Publication Date
EP0367762A1 true EP0367762A1 (fr) 1990-05-16

Family

ID=6329426

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19880902438 Withdrawn EP0367762A1 (fr) 1987-06-10 1988-02-26 Agencement de structuration par photolithographie et son procede de fabrication

Country Status (2)

Country Link
EP (1) EP0367762A1 (fr)
WO (1) WO1988009961A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process
JPS58135640A (ja) * 1982-02-08 1983-08-12 Hitachi Ltd フオトレジストの段差形成方法
JPS59208550A (ja) * 1983-05-12 1984-11-26 Sanyo Electric Co Ltd ポジ型レジスト法
JPS61179434A (ja) * 1984-12-26 1986-08-12 Matsushita Electric Ind Co Ltd パタ−ン形成有機膜
US4571374A (en) * 1984-12-27 1986-02-18 Minnesota Mining And Manufacturing Company Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive
JPH0697624A (ja) * 1992-09-11 1994-04-08 Oki Electric Ind Co Ltd プリント配線板の検査方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8809961A1 *

Also Published As

Publication number Publication date
WO1988009961A1 (fr) 1988-12-15

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