EP0399072B1 - Bijou - Google Patents
Bijou Download PDFInfo
- Publication number
- EP0399072B1 EP0399072B1 EP89109305A EP89109305A EP0399072B1 EP 0399072 B1 EP0399072 B1 EP 0399072B1 EP 89109305 A EP89109305 A EP 89109305A EP 89109305 A EP89109305 A EP 89109305A EP 0399072 B1 EP0399072 B1 EP 0399072B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- metal
- jewelry
- jewellery
- jewellery item
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 150000002736 metal compounds Chemical class 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 235000019589 hardness Nutrition 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- 230000003678 scratch resistant effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000428199 Mustelinae Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C27/00—Making jewellery or other personal adornments
- A44C27/001—Materials for manufacturing jewellery
- A44C27/005—Coating layers for jewellery
- A44C27/006—Metallic coatings
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C27/00—Making jewellery or other personal adornments
- A44C27/001—Materials for manufacturing jewellery
Definitions
- the invention relates to a disc-shaped flat or structured metallic piece of jewelry or part of a piece of jewelry, also brand, medal, dial, with one or both sides processing, which is provided on one or both sides with one or more in turn uniform or structured chemically different type of layer.
- Such metallic disc-shaped pieces of jewelry belong to the permanent holdings of the jewelry industry. They are worn as a single piece of jewelry, for example as earrings, or form part of a jewelry creation, for example in necklaces or bracelets.
- the surface of these metallic disc-shaped pieces of jewelry is processed in many ways, the platelets either being flat, mirror-polished or structured on their surface.
- the material for these plates ranges from aluminum to precious metals.
- the noble metals, especially silver and gold, are generally left in their metal color. Anodizing in a wide variety of colors has prevailed for aluminum. The same applies to the electroplating of titanium.
- metals with hard surfaces are preferred, in general surface-tempered metals in order to maintain the mirror gloss for as long as possible.
- hard materials such as carbides, nitrides, borides and silicides are relatively difficult to process.
- Pieces of jewelry made from these materials are therefore relatively expensive and have so far not been able to be compared to the metals mentioned above, in particular the precious metals which are roughly equivalent in price, as pieces of jewelry push through.
- mirror-finished metal surfaces with a roughness depth below the above-mentioned limit of 1 x 10 ⁇ 6m have very interesting optical properties, especially for the jewelry sector. These properties, which make them wished pieces of jewelry, could then also be enriched by a further additional surface treatment, for example structuring or coating, in order to achieve further optical effects, by a further interesting or decorative effect.
- the disk-shaped metal piece is a single crystal and that the different type of layer has a thickness of 0.01 x 10 ⁇ 6m to 2 x 10 ⁇ 6m.
- single crystals seems to contradict the first point of the list above - value for money.
- single crystals not only have special properties that facilitate the further treatment of these disc-shaped metallic pieces of jewelry and thus make them cheaper, but they are now also required in very large quantities and are therefore inexpensive to produce on an industrial scale.
- a single crystal is a crystalline body, whose basic cells are almost parallel and have no grain boundaries. This property can be exploited in the manufacture of such jewelry by placing the plane of the disk-shaped jewelry in the crystal plane. Therefore, striking light is always reflected in the desired way with the same inclination, while in the multi-crystal each individual crystal (grain) reflects the light in a different direction.
- Desired reflecting surfaces can therefore be achieved with such a single crystal much more easily and with a significantly lower surface roughness than with multi-crystals or amorphous metals.
- roughness depths in the nano range can be achieved with such single crystals, down to approximately 5 ⁇ 10 ⁇ m. Even roughness depths that are significantly above this size, for example 200 x 10 ⁇ 9m, are still recognized as perfectly reflective due to the effect described above. The somewhat larger manufacturing effort for single crystals is therefore compensated for during further processing and also produces the desired light-optical effects which cannot be achieved with polycrystalline material.
- both sides of such a silicon wafer can easily be processed without loss of quality.
- This jewelry value is increased according to the invention in that the single crystals on one or both sides with one or more in turn uniform or structured chemically different types of layers are each provided with a layer thickness of 0.01 x 10 ⁇ 6m to 2 x 10 ⁇ 6m. It is known from theory that extremely thin layers below a layer thickness of 2 ⁇ 10 ⁇ m have special properties. This should be related to a strong increase in the refractive index with decreasing layer thickness and a simultaneous decrease in the absorption coefficient. Multiple reflections both on the surface and after the translucent thin layer on the crystal plane result in interferences that produce remarkable optical reflections. In any case, such extremely thin layers show special optical properties that make them seem suitable for processing into jewelry.
- the chemically different layer which is to be applied to the polished single crystal according to the invention can be made of a metal or a metal compound in the manner according to the invention.
- the metal should have a high complex refractive index, which is generally the case for the hard materials mentioned above - carbides, nitrites, borides and silicides. This is also true for semiconductors, in this case in particular silicon.
- the inexpensive production again plays a role, which is why oxygen or nitrogen is preferably chosen as the connecting partner in the manner according to the invention.
- the layer is achieved by directly oxidizing or nitriding the single crystal on one or both sides.
- the penetration depth of oxygen or nitrogen can be controlled very precisely, and of course the thickness of this layer, which is decisive for the coloring.
- this chemically different layer by the chemical vapor deposition method (CVD; LPCVD; PECVD; NPCVD). Both methods can also be used in combination, for example in that the single crystal is oxidized, then preferably structured in the etching process and then covered with a further layer, this further layer also being structured or covering only certain areas of the disk-shaped single crystal.
- the oxidation and nitriding processes in succession, for example after the oxidation partially removing the oxide layer and then nitriding the now exposed silicon layers. It is also entirely possible to additionally coat or print the processed disks with customary layers, or in depressions Bring precious metal. It goes without saying that the disks can also be provided with elevations in this way.
- FIG. 1 shows a single crystal with an oxidized surface
- FIG. 2 shows a single crystal with an applied layer
- FIGS. 3 and 4 show a combination of these methods according to FIGS. 1 and 2.
- a single crystal (1) consisting of silicon is provided with an oxidation layer (2) by oxidation.
- This oxidation layer (2) has a thickness (a) of 0.01 x 10 ⁇ 6m to 2 x 10 ⁇ 6m, which results in the optical effects or the coloring of the single crystal disc set out in the description.
- the thickness (b) of this single crystal wafer is on average about 500 x 10 ⁇ 6m.
- the oxidation layer (2) also causes a very high surface hardness, so that this metallic disc is also very scratch-resistant.
- the previously polished single crystal disc (1) is preferably in the way of the chemical vapor deposition process, a metal layer or a metal compound layer, again applied in the thickness (a) between 0.01 x 10 ⁇ 6m and 2 x 10 ⁇ 6m.
- this layer will also diffuse slightly into the silicon single crystal, that is to say it will firmly bond to the single crystal.
- this applied layer (3) results in surface hardening in addition to the special color effect.
- the silicon single crystal was first provided with a recess in the etching process and then, as shown in FIG. 1, oxidized.
- a further metal or metal connection layer (5) is introduced into the remaining depression (4), so that this layer is different in color from the surrounding pane surface.
- the layer thickness (a) is between 0.01 and 2 ⁇ 10 ⁇ m, as is the layer thickness (c) of the applied layer.
- the smallest possible distance (d) between the edges of the recess is 2 x 10 ⁇ 6m due to the etching process to be used.
- a reversal of the process is shown in FIG. 4, where the wafer is first etched in such a way that elevations (5) remain, which can now be nitrided, for example, while the surroundings thereof are oxidized. Of course, this also results in different color effects that make these elevations stand out clearly.
- this anisotropic material gives rise to further optical effects due to different light incidence angles.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Adornments (AREA)
- Surface Treatment Of Glass (AREA)
- Farming Of Fish And Shellfish (AREA)
Claims (7)
- Bijou métallique ou partie d'un bijou (1) sous la forme d'un disque plan ou structuré, ou marque, médaille ou écran, travaillé sur un côté ou sur les deux côtés, qui est pourvu d'un côté ou des deux côtés d'une ou de plusieurs couches (2, 3) chimiquement différentes qui sont à leur tour uniformes ou structurées,
caractérisé en ce que
la pièce de métal discoïde est un monocristal (1) et que la couche de nature différente possède une épaisseur (a, C) de 0,01 x 10⁻⁶ m à 2 x 10⁻⁶ m. - Bijou selon la revendication 1, caractérisé en ce que la couche (2, 3) chimiquement différente est faite d'un métal ou d'un composé métallique.
- Bijou selon la revendication 2, caractérisé en ce que le métal ou le composé métallique présente un haut indice de réfraction complexe.
- Bijou selon la revendication 2 ou 3, caractérisé en ce que le métal ou le composé métallique est un semi-conducteur.
- Bijou selon une des revendications 2 à 4, caractérisé en ce que le partenaire du composé est l'oxygène ou l'azote.
- Bijou selon la revendication 5, caractérisé en ce que la couche de composé métallique est une couche superficielle d'oxyde ou de nitrure du monocristal (1).
- Bijou selon la revendication 2, caractérisé en ce que la couche chimiquement différente est appliquée selon le procédé de dépôt en phase vapeur.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES198989109305T ES2036295T3 (es) | 1989-05-23 | 1989-05-23 | Pieza de joyeria. |
| DE8989109305T DE58902973D1 (de) | 1989-05-23 | 1989-05-23 | Schmuckstueck. |
| AT89109305T ATE83134T1 (de) | 1989-05-23 | 1989-05-23 | Schmuckstueck. |
| EP89109305A EP0399072B1 (fr) | 1989-05-23 | 1989-05-23 | Bijou |
| US07/367,884 US5087528A (en) | 1989-05-23 | 1989-06-19 | Fashion article |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP89109305A EP0399072B1 (fr) | 1989-05-23 | 1989-05-23 | Bijou |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0399072A1 EP0399072A1 (fr) | 1990-11-28 |
| EP0399072B1 true EP0399072B1 (fr) | 1992-12-09 |
Family
ID=8201400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP89109305A Expired - Lifetime EP0399072B1 (fr) | 1989-05-23 | 1989-05-23 | Bijou |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5087528A (fr) |
| EP (1) | EP0399072B1 (fr) |
| AT (1) | ATE83134T1 (fr) |
| DE (1) | DE58902973D1 (fr) |
| ES (1) | ES2036295T3 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6042797A (en) * | 1997-07-02 | 2000-03-28 | Tosoh Corporation | Adsorbent for ethylene, method for adsorbing and removing ethylene and method for purifying an exhaust gas |
| US6794014B2 (en) * | 1997-09-30 | 2004-09-21 | Winter Cvd Tecknik Gmbh | Gemstone |
| CA2296702A1 (fr) * | 1998-04-23 | 1999-11-04 | Winter Cvd Technik Gmbh | Pierres ornementales |
| DE29820230U1 (de) * | 1998-04-23 | 1999-03-25 | Winter CVD-Technik GmbH, 22609 Hamburg | Schmucksteine |
| HK1050107A2 (en) * | 2002-04-02 | 2003-05-16 | Wallace & Samuel Gallery Ltd | Ornamental articles including translucent gems and method of making same |
| EP2543653B2 (fr) * | 2011-07-04 | 2023-01-11 | Comadur S.A. | Procédé de fabrication d'une céramique mate non marquante |
| HK1190568A2 (en) | 2013-05-21 | 2014-07-04 | Master Dynamic Limited | A method and apparatus for frabricating a coloured component for a watch |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1891248A (en) * | 1932-02-19 | 1932-12-20 | Stamer Morris | Cameo |
| US3414434A (en) * | 1965-06-30 | 1968-12-03 | North American Rockwell | Single crystal silicon on spinel insulators |
| US3412575A (en) * | 1966-01-18 | 1968-11-26 | Feldman Charles | Jewelry article including thin metal and dielectric films |
| US3922475A (en) * | 1970-06-22 | 1975-11-25 | Rockwell International Corp | Process for producing nitride films |
| US3950596A (en) * | 1971-12-20 | 1976-04-13 | Astrid Corporation, Limited | Altering the appearance of corundum crystals |
| GB1414864A (en) * | 1972-03-27 | 1975-11-19 | Suwa Seikosha Kk | Method of producing an externally visible part of a watch |
| JPS5532021B2 (fr) * | 1974-10-26 | 1980-08-22 | ||
| FR2547775B1 (fr) * | 1983-06-23 | 1987-12-18 | Metalem Sa | Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore |
| US4490440A (en) * | 1983-08-16 | 1984-12-25 | Reber William L | High technology jewelry and fabrication of same |
| DE3590588T1 (de) * | 1984-11-09 | 1986-10-30 | Konica Corp., Tokio/Tokyo | Leitendes Verbundgebilde |
| CH664665GA3 (fr) * | 1986-06-19 | 1988-03-31 |
-
1989
- 1989-05-23 AT AT89109305T patent/ATE83134T1/de not_active IP Right Cessation
- 1989-05-23 ES ES198989109305T patent/ES2036295T3/es not_active Expired - Lifetime
- 1989-05-23 EP EP89109305A patent/EP0399072B1/fr not_active Expired - Lifetime
- 1989-05-23 DE DE8989109305T patent/DE58902973D1/de not_active Expired - Fee Related
- 1989-06-19 US US07/367,884 patent/US5087528A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5087528A (en) | 1992-02-11 |
| DE58902973D1 (de) | 1993-01-21 |
| EP0399072A1 (fr) | 1990-11-28 |
| ES2036295T3 (es) | 1993-05-16 |
| ATE83134T1 (de) | 1992-12-15 |
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