EP0426812B1 - Gallium-arsenid schaltmischstufe - Google Patents

Gallium-arsenid schaltmischstufe Download PDF

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Publication number
EP0426812B1
EP0426812B1 EP90907888A EP90907888A EP0426812B1 EP 0426812 B1 EP0426812 B1 EP 0426812B1 EP 90907888 A EP90907888 A EP 90907888A EP 90907888 A EP90907888 A EP 90907888A EP 0426812 B1 EP0426812 B1 EP 0426812B1
Authority
EP
European Patent Office
Prior art keywords
mixer
receiving
transistor
gallium
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP90907888A
Other languages
English (en)
French (fr)
Other versions
EP0426812A4 (en
EP0426812A1 (de
Inventor
Edward T. Clark
Yolanda Prieto
John W. Simmons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of EP0426812A1 publication Critical patent/EP0426812A1/de
Publication of EP0426812A4 publication Critical patent/EP0426812A4/en
Application granted granted Critical
Publication of EP0426812B1 publication Critical patent/EP0426812B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04H—BROADCAST COMMUNICATION
    • H04H40/00—Arrangements specially adapted for receiving broadcast information

Definitions

  • This invention relates generally to mixers, and more specifically to gallium-arsenide (GaAs) switching mixers, and is particularly directed toward a GaAs switching mixer employing enhancement mode GaAs switching devices.
  • GaAs gallium-arsenide
  • GaAs switching mixers have attempted to vary device geometries of GaAs depletion mode devices to minimize the turn-on (switching point) of the devices. While helpful, such variation of depletion mode GaAs devices has not been able to satisfactorily reduce the required local oscillator drive level or harmonic distortion . Accordingly, a need exists for a superior GaAs switching mixer.
  • a gallium-arsenide switching mixer for providing an output signal representing the sum and difference frequency, the mixer comprising:
  • a GaAs switching mixer receives an information signal and an injection signal to provide an intermediate frequency signal.
  • the injection signal controls enhancement mode GaAs devices so as to minimize the required injection drive level and distortion products.
  • Figure 1 illustrates a GaAs mixer in accordance with the present invention.
  • a switching mixer circuit 10 is arranged in what is commonly known as a double-balanced mixer configuration.
  • a current source 12 is coupled from the sources of a differential pair of gallium-arsenide depletion mode field effect transistors 14 and 14' to ground.
  • Transistors 14 and 14' are coupled in what is known as a single-balanced configuration.
  • the source of transistor 14 is coupled to the source of transistor 14'.
  • the drain of transistor 14 is coupled to the sources of a differential pair of enhancement mode gallium-arsenide transistors 18 and 22 and the drain of transistor 14' is coupled to the sources of the differential pair of transistors 18' and 22'.
  • Transistors 14 and 14' are as close to being geometrically symmetrical as possible, as are the 18 and 18' transistors and 22 and 22' transistors, respectively.
  • the drain of transistor 18 is coupled to a primary terminal 26 of transformer coupling 24 and the drain of transistor 18' is coupled to the opposite primary terminal 26' of transformer coupling 24.
  • the drain of transistor 22 is coupled to the drain of transistor 18' and, similarly, the drain of transistor 22' is coupled to the drain transistor 18.
  • the primary winding of transformer 24 is center-tapped at terminal 28 to provide a balanced output.
  • the secondary coupling of transformer 24 extends between terminals 30 and 30'.
  • Radio-frequency information signal 16 is applied to the gate of transistor 14 and radio-frequency signal 16' (i.e., the compliment or negative of signal 16') is applied to the gate of transistor 14'.
  • Signals 16 and 16' are known as complementary-phased signals.
  • a local oscillator injection signal 20 is applied to the gates of transistors 18 and 18'.
  • Signal 20', (the complement of signal 20) is applied to the gates of transistors 22 and 22'.
  • the complementary-phased signals 16, 16' cause the source currents in differential pairs 18, 22 and 18', 22' to vary.
  • multiplication of complementary-phased signals 16, 16' and complementary-phased signals 20, 20' is accomplished in each of the differential pairs 18, 22 and 18', 22'.
  • the output signal appears between terminals 30 and 30'.

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Superheterodyne Receivers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Transmitters (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Disintegrating Or Milling (AREA)

Claims (9)

  1. Eine Gallium-Arsenid Schaltmischeinrichtung (10) zum Bereitstellen eines Ausgangssignals, das die Summen- und Differenzfrequenz darstellt, wobei die Mischeinrichtung umfaßt:
    eine erste Einrichtung (14, 14') zum Erhalten eines Informationssignals, wobei die genannte erste Einrichtung mindestens einen ersten Transistor (14) umfaßt; und
    eine zweite Einrichtung (18, 18', 22, 22') zum Erhalten eines Injektionssignals, wobei die genannte zweite Einrichtung mindestens einen zweiten Transistor (18) umfaßt, der mit dem ersten Transistor (14) so gekoppelt ist, daß das Informationssignal und das Injektionssignal kombiniert werden, um das Ausgangssignal zu liefern, wobei die Mischeinrichtung dadurch gekennzeichnet ist, daß der genannte zweite Transistor ein Transistor vom Anreicherungstyp ist, so daß ein verringerter Ansteuerpegel des örtlichen Oszillators und eine verringerte harmonische Verzerrung geschaffen werden.
  2. Die Mischeinrichtung gemäß Anspruch 1, worin die genannte zweite Einrichtung zum Erhalten eines Injektionssignals mindestens zwei Gallium-Arsenid Transistoren (18, 22) vom Anreicherungstyp einschließt, die in einer Einzelgegentaktausgestaltung gekoppelt sind.
  3. Die Mischeinrichtung gemäß Anspruch 1, worin die genannte zweite Einrichtung zum Erhalten eines Injektionssignals vier Gallium-Arsenid Transistoren (18, 22, 18', 22') vom Anreicherungstyp einschließt, die in einer Doppelgegentaktausgestaltung gekoppelt sind.
  4. Die Mischeinrichtung gemäß Anspruch 1, 2 oder 3, worin die erste Einrichtung zum Erhalten eines Injektionssignals ein Paar von Transistoren (14, 14') einschließt.
  5. Die Mischeinrichtung gemäß Anspruch 1, 2, 3 oder 4, die ferner eine Einrichtung zum Bereitstellen eines abgestimmten Ausgangs (24) umfaßt.
  6. Die Mischeinrichtung gemäß Anspruch 1, 2, 3, 4 oder 5, worin die erste Einrichtung zum Erhalten eines Informationssignals ein Paar Transistoren (14, 14') vom Verarmungstyp einschließt.
  7. Die Mischeinrichtung gemäß Anspruch 6, worin die erste Einrichtung zum Erhalten eines Informationssignals ein Paar Gallium-Arsenid Transistoren (14, 14') vom Verarmungstyp einschließt.
  8. Die Mischeinrichtung gemäß Anspruch 1, 2, 3, 4 oder 5, worin die erste Einrichtung zum Erhalten eines Informationssignals ein Paar Transistoren vom Anreicherungstyp einschließt.
  9. Die Mischeinrichtung gemäß Anspruch 8, worin die erste Einrichtung zum Erhalten eines Informationssignals ein Paar Gallium-Arsenid Transistoren vom Anreicherungstyp einschließt.
EP90907888A 1989-05-01 1990-04-25 Gallium-arsenid schaltmischstufe Expired - Lifetime EP0426812B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34526989A 1989-05-01 1989-05-01
US345269 1989-05-01
PCT/US1990/002284 WO1990014150A2 (en) 1989-05-01 1990-04-25 Gallium-arsenide switching mixer

Publications (3)

Publication Number Publication Date
EP0426812A1 EP0426812A1 (de) 1991-05-15
EP0426812A4 EP0426812A4 (en) 1992-01-15
EP0426812B1 true EP0426812B1 (de) 1996-08-28

Family

ID=23354299

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90907888A Expired - Lifetime EP0426812B1 (de) 1989-05-01 1990-04-25 Gallium-arsenid schaltmischstufe

Country Status (7)

Country Link
EP (1) EP0426812B1 (de)
JP (1) JPH03506110A (de)
AT (1) ATE142058T1 (de)
DE (1) DE69028275T2 (de)
DK (1) DK0426812T3 (de)
ES (1) ES2090133T3 (de)
WO (1) WO1990014150A2 (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177860A (en) * 1985-07-09 1987-01-28 Multitone Electronics Plc R.F. mixer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603435A (en) * 1984-08-20 1986-07-29 Gte Laboratories Incorporated Microwave mixer apparatus
DE3509327A1 (de) * 1985-03-15 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Dynamischer frequenzteiler mit mischstufe und verstaerker
US4896374A (en) * 1988-12-09 1990-01-23 Siemens Aktiengesellschaft Broadband monolithic balanced mixer apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177860A (en) * 1985-07-09 1987-01-28 Multitone Electronics Plc R.F. mixer

Also Published As

Publication number Publication date
EP0426812A4 (en) 1992-01-15
WO1990014150A2 (en) 1990-11-29
DK0426812T3 (da) 1996-09-16
DE69028275T2 (de) 1997-03-13
JPH03506110A (ja) 1991-12-26
EP0426812A1 (de) 1991-05-15
ES2090133T3 (es) 1996-10-16
WO1990014150A3 (en) 1991-04-04
DE69028275D1 (de) 1996-10-02
ATE142058T1 (de) 1996-09-15

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