EP0442704A2 - Metallhalogenidlampe und Verfahren zu ihrer Herstellung - Google Patents

Metallhalogenidlampe und Verfahren zu ihrer Herstellung Download PDF

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Publication number
EP0442704A2
EP0442704A2 EP91301128A EP91301128A EP0442704A2 EP 0442704 A2 EP0442704 A2 EP 0442704A2 EP 91301128 A EP91301128 A EP 91301128A EP 91301128 A EP91301128 A EP 91301128A EP 0442704 A2 EP0442704 A2 EP 0442704A2
Authority
EP
European Patent Office
Prior art keywords
hafnium
yttrium
hfo2
uranium
quartz glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP91301128A
Other languages
English (en)
French (fr)
Other versions
EP0442704A3 (en
Inventor
Masaki Aoki
Hideaki Omura
Toshiaki Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of EP0442704A2 publication Critical patent/EP0442704A2/de
Publication of EP0442704A3 publication Critical patent/EP0442704A3/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/30—Vessels; Containers
    • H01J61/35—Vessels; Containers provided with coatings on the walls thereof; Selection of materials for the coatings

Definitions

  • the present invention relates to a quartz luminous tube to be used for a metal halide lamp, a high pressure mercury lamp, etc. and a method of making the same.
  • a metal iodide or mercury and rare gas are sealed in the quartz luminous tube of such lamp (e.g. Japanese Patent Laid-open Publication No.50-12881/1975).
  • the additive is present as a stable metal iodide in the vicinity of the luminous tube and does not corrode quartz or quartz glass, but at the central part of the arc, it is dissociated into metal atoms and iodine atoms, and vapor of said metal is excited in arc and radiates the spectrum peculiar to the metal.
  • An object of the present invention is to provide a metal halide lamp having extremely excellent durability and a method of making the same.
  • quartz glass tube is coated on its inner surface with an oxide which has a higher heat resistance than that of quartz and chemical stability, preferably any one of hafnium oxide (HfO2), uranium oxide (UO2), especially preferably HfO2 or UO2 partially stabilized with yttrium oxide (Y2O3), by a chemical vapour deposition (CVD) using metal chelate.
  • an oxide which has a higher heat resistance than that of quartz and chemical stability preferably any one of hafnium oxide (HfO2), uranium oxide (UO2), especially preferably HfO2 or UO2 partially stabilized with yttrium oxide (Y2O3), by a chemical vapour deposition (CVD) using metal chelate.
  • HfO2 hafnium oxide
  • UO2 uranium oxide
  • Y2O3 yttrium oxide
  • the CVD to be used in the present invention is to introduce a vapour of metal chelate containing hafnium (Hf), uranium (U), yttrium (Y), preferably hafnium acetyl acetone [Hf(C5H7O2)4], uranium acetyl acetone [U(C5H7O2)4], yttrium acetyl acetone [Y(C5H7O2)3], especially preferably hafnium dipivaloylmethane [Hf (C11H19O2)4], uranium dipivaloylmethane [U(C11H19O2)4], yttrium dipivaloylmethane [Y(C11H19O2)3], hafnium hexafluoroacetylacetone [Hf(C5HF6O2)4], uranium hexafluoroacetylacetone [U(C5HF6O2)4], ura
  • HfO2 or UO2 obtained by such a method does not react with the metal halide, which is a material sealed in the lamp, at a high temperature during lighting of the lamp (during the lighting of the lamp, the inner wall of the quartz glass is about 950°C) is not only because HfO2 or UO2 is a substance having the higher melting point and higher density than the quartz glass (HfO2's melting point is 2810°C and density is 9.68 g/cm3, UO2's melting point is 2800°C and density is 10.96 g/cm3), but also because the oxide film formed by CVD using an active metal chelate is dense.
  • the present invention is a useful invention which can extend the life of the halide lamp to a great extent.
  • Fig. 1 shows a schematic view of a CVD apparatus.
  • the part 11 is a luminous tube sealed with main electrodes at both ends
  • 12 is a heater for heating the luminous tube 11
  • 13 is a gas introducing tube for flowing a reaction gas
  • 14 is an exhaust pipe for gas
  • 15 is a bubbler containing a material gas
  • 16 is an introducing port for carrier gas
  • 17 is a pump for exhausting the luminous tube under reduced pressure.
  • the luminous tube is subjected to reduced pressure inside with a rotary pump 17 to remove adsorbed gases and the like.
  • the luminous tube is heated with the heater 12, a metal chelate is placed on the bubbler 15, the bubbler is heated, and the vapour thereof is introduced into the luminous tube 11 through the introducing port 13 along with the oxygen carrier to carry out reaction, by which an oxide is formed into a film of 0.1 ⁇ m - 3.0 ⁇ m (preferably, 0.2 ⁇ m - 2 ⁇ m) on the inner surface of the luminous tube.
  • introduction of the carrier gas is stopped, the heater is switched off to cool the luminous tube, and the gas introducing tube 13 is tip sealed at a position as near as possible to the luminous tube.
  • the luminous tube was subjected to reduced pressure inside to 2 X 10 -2 Torr with a rotary pump 17 to remove adsorbed gas and the like.
  • the luminous tube was heated to 600°C hafnium acetyl acetonate [Hf(C5H7O2)4] was placed in a bubbler 15, the bubbler was heated to 125°C, and its vapour, along with the oxygen carrier (flow rate, 10 cc/min.), was introduced into the luminous tube 11 through the introducing port 13, and a reaction was carried out for 5 minutes to form a film of hafnium oxide of about 1.0 ⁇ m on the inner surface of the luminous tube.
  • CsI cesium iodide
  • NdI3 neodium iodide
  • Hg mercury
  • the discharge lamp was lighted with 100 volts and 1.5 amperes (at that time, the color temperature was about 6500°K) . Also, the beam maintenance factor after lighting the lamp for 5000 hours was 84%.
  • Fig. 2 shows a sectional view of the lamp produced in the above manner, in which 21 is a quartz luminous tube, 22 is a coated oxide film (HfO2), and 23 is a tungusten starting electrode.
  • 21 is a quartz luminous tube
  • 22 is a coated oxide film (HfO2)
  • 23 is a tungusten starting electrode.
  • the luminous tube was subjected to reduced pressure inside to 2 X 10 ⁇ 2 Torr with a rotary pump 17 to remove adsorbed gas and the like.
  • the luminous tube was heated to 600°C, a mixture of 95 mol % hafnium acetyl acetonate [Hf(C5H7O2)4] and 5 mol % yttrium acetyl acetone [Y(C5H7O2)3] was placed in a bubbler 15, the bubbler was heated to 125°C, and its vapour, along with the oxygen carrier (flow rate, 10 cc/min.), was introduced into the luminous tube 11 through the introducing port 13, and a reaction was carried out for 5 minutes to form a film of hafnium oxide of about 1.1 ⁇ m on the inner surface of the luminous tube.
  • CsI cesium iodide
  • NdI3 neodium iodide
  • Hg mercury
  • the discharge lamp was lighted with 100 volts and 2.5 amperes (at that time, the color temperature was about 6500°K). Also, the beam maintenance factor after lighting the lamp for 5000 hours was 88 %.
  • Fig. 2 shows a sectional view of the lamp produced in the above manner, in which 21 is a quartz luminous tube, 22 is a coated oxide film (HfO2), and 23 is a tungsten starting electrode.
  • 21 is a quartz luminous tube
  • 22 is a coated oxide film (HfO2)
  • 23 is a tungsten starting electrode.
  • the luminous tube was subjected to reduced pressure inside to 10 ⁇ 2 Torr with a rotary pump 37 to remove adsorbed gas and the like.
  • a high frequency power source 13.56 MHz
  • a current of 200 W was applied to generate a plasma.
  • hafnium acetyl acetonate [Hf(C5H7O2)4] was placed in a bubbler 35, the bubbler was heated to 125°C, and its vapour, along with the oxygen carrier (flow rate, 10 cc/min.), was introduced into the luminous tube 31 through the introducing port 33, and a reaction was carried out for 7 minutes to form a film of hafnium oxide of about 1.1 ⁇ m on the inner surface of the luminous tube. Thereafter, introduction of the carrier gas was stopped supply of the high frequency power was stopped, and the gas introducing pipe 33 was tip sealed at a position as near as possible to the luminous tube.
  • CsI cesium iodide
  • NdI3 neodium iodide
  • Hg mercury
  • about 20 Torr of argon gas (Ar) was introduced as a gas for starting from the exhaust pipe 34, followed by tip sealing the exhaust pipe 34 to complete the lamp.
  • Ar argon gas
  • the lamp was lighted with 100 volts and 2.5 amperes (at that time, the color temperature was about 6500°K). Also, the beam maintenance factor after lighting the lamp for 5000 hours was 85 %.
  • the luminous tube was subjected to reduced pressure inside to 10 -3 Torr with a turbo molecular pump 47 to remove adsorbed gas and the like.
  • a microwave power source (2.45 GHz) 42 a power of 200 W was applied to generate a plasma.
  • hafnium acetyl acetonate [Hf(C5H7O2)4] was placed in a bubbler 45, the bubbler 45 was heated to 125°C, and its vapour, along with the oxygen carrier (flow rate, 10 cc/min.), was introduced into the luminous tube 41 through the introducing port 43, and a reaction was carried out for 6 minutes to form a film of hafnium oxide of about 1.2 ⁇ m on the inner surface of the luminous tube. Thereafter, the introduction of the carrier gas was stopped, supply of the microwave power was stopped, and the gas introducing pipe 43 was tip sealed at a position as near as possible to the luminous tube.
  • CsI cesium iodide
  • NdI3 neodium iodide
  • Hg mercury
  • about 20 Torr of argon gas (Ar) was introduced as a gas for starting from the exhaust pipe 44, followed by tip sealing the exhaust pipe 44 to complete the lamp.
  • Ar argon gas
  • the lamp was lighted with 100 volts and 2.5 amperes (at that time, the color temperature was about 6500°K). Also, the beam maintenance factor after lighting the lamp for 5000 hours was 87 %
  • the Sample No. 14 is a comparative example lying outside the scope of the present invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)
EP19910301128 1990-02-16 1991-02-12 Metal halide lamp and method of making the same Withdrawn EP0442704A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36457/90 1990-02-16
JP2036457A JPH03238747A (ja) 1990-02-16 1990-02-16 金属蒸気放電灯およびその製造方法

Publications (2)

Publication Number Publication Date
EP0442704A2 true EP0442704A2 (de) 1991-08-21
EP0442704A3 EP0442704A3 (en) 1992-04-08

Family

ID=12470352

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19910301128 Withdrawn EP0442704A3 (en) 1990-02-16 1991-02-12 Metal halide lamp and method of making the same

Country Status (3)

Country Link
EP (1) EP0442704A3 (de)
JP (1) JPH03238747A (de)
CA (1) CA2036485A1 (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4422778A1 (de) * 1993-06-29 1995-01-12 Matsushita Electric Works Ltd Metalldampf-Bogenentladungslampe
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US7115166B2 (en) 2002-08-28 2006-10-03 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US7122464B2 (en) 2002-08-28 2006-10-17 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US7300870B2 (en) 2002-08-28 2007-11-27 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using organic amines
US7332032B2 (en) 1999-06-16 2008-02-19 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US7943501B2 (en) 2002-08-28 2011-05-17 Micron Technology, Inc. Systems and methods of forming tantalum silicide layers
US8617312B2 (en) 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443686A (en) * 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes
US5394057A (en) * 1992-08-07 1995-02-28 General Electric Company Protective metal silicate coating for a metal halide arc discharge lamp
JP4926504B2 (ja) * 2006-03-08 2012-05-09 浜松ホトニクス株式会社 光電面、それを備える電子管及び光電面の製造方法
US9999907B2 (en) * 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1188015A (en) * 1967-10-12 1970-04-15 Gen Electric & English Elect Improvements in or relating to Electric Discharge Lamps.
DE1764126C3 (de) * 1968-04-05 1975-06-12 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Niederdruck-Natriumdampf-Entladungslampe
FR2145382A1 (en) * 1971-07-12 1973-02-23 Commissariat Energie Atomique Dipivaloylmethane chelates - of uranium and indium activatable by radiation, as tracers for leak detection
BR7902379A (pt) * 1978-08-07 1980-10-07 J Crowley Processo para fazer uma pelicula de oxido metalico em tubos de vidro
NL8202778A (nl) * 1982-07-09 1984-02-01 Philips Nv Lagedrukkwikdampontladingslamp.
CH672380A5 (en) * 1987-01-27 1989-11-15 Bbc Brown Boveri & Cie Reduce darkening of mercury vapour UV tube - using hafnium, lanthanum, thorium or aluminium oxide coating

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500571A (en) * 1993-06-29 1996-03-19 Matsushita Electric Works, Ltd. Metal vapor discharge lamp
DE4422778A1 (de) * 1993-06-29 1995-01-12 Matsushita Electric Works Ltd Metalldampf-Bogenentladungslampe
US7332032B2 (en) 1999-06-16 2008-02-19 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US7943501B2 (en) 2002-08-28 2011-05-17 Micron Technology, Inc. Systems and methods of forming tantalum silicide layers
US7122464B2 (en) 2002-08-28 2006-10-17 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US7196007B2 (en) 2002-08-28 2007-03-27 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US7300870B2 (en) 2002-08-28 2007-11-27 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using organic amines
US7115166B2 (en) 2002-08-28 2006-10-03 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US7544615B2 (en) 2002-08-28 2009-06-09 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using organic amines
US7560393B2 (en) 2002-08-28 2009-07-14 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US8617312B2 (en) 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum
US7482284B2 (en) 2003-04-29 2009-01-27 Micron Technology, Inc. Deposition methods for forming silicon oxide layers
US7678708B2 (en) 2003-04-29 2010-03-16 Micron Technology, Inc. Systems and methods for forming metal oxide layers
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US8114219B2 (en) 2003-04-29 2012-02-14 Micron Technology, Inc. Systems and methods for forming metal oxide layers
US8394725B2 (en) 2003-04-29 2013-03-12 Micron Technology, Inc. Systems and methods for forming metal oxide layers

Also Published As

Publication number Publication date
EP0442704A3 (en) 1992-04-08
JPH03238747A (ja) 1991-10-24
CA2036485A1 (en) 1991-08-17

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