EP0456343A1 - Gruppe von LED's hoher Intensität auf einem Träger - Google Patents

Gruppe von LED's hoher Intensität auf einem Träger Download PDF

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Publication number
EP0456343A1
EP0456343A1 EP91302139A EP91302139A EP0456343A1 EP 0456343 A1 EP0456343 A1 EP 0456343A1 EP 91302139 A EP91302139 A EP 91302139A EP 91302139 A EP91302139 A EP 91302139A EP 0456343 A1 EP0456343 A1 EP 0456343A1
Authority
EP
European Patent Office
Prior art keywords
light
mount
emitting diode
diode
cluster mount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP91302139A
Other languages
English (en)
French (fr)
Inventor
Josef Rzeznik
Raymond Edward Foran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kulicke and Soffa Industries Inc
Original Assignee
Kulicke and Soffa Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kulicke and Soffa Industries Inc filed Critical Kulicke and Soffa Industries Inc
Publication of EP0456343A1 publication Critical patent/EP0456343A1/de
Withdrawn legal-status Critical Current

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means

Definitions

  • the present invention relates to light sources of the type employed to illuminate semiconductor integrated circuits during the process of their manufacturing. More particularly, the present invention relates to a cluster mount for concentrating light being emitted from a plurality of high intensity light emitting diodes (LEDs).
  • LEDs high intensity light emitting diodes
  • illuminators for manufacturing of semiconductor equipment have employed fluorescent or incandescent white light which may be supplied directly or though lucite tubes or fiber optic bundles. While such white light sources have been able to be flood or focus white light on the semiconductor chips being processed, the light and/or the light source has consumed excesses or mounts of power and generated unnecessary heat in the workplace.
  • Light from light emitting diodes has a narrow wave length varying from various reds in the long wave length spectrum to greens associated with the short wave lengths and narrow spectrum intensity characteristics.
  • the human eye is more responsive to a broad spectrum of colors which define white light.
  • electronic pattern recognition systems have been found to be responsive to narrow spectrum wave lengths of light which fall in the yellow to orange spectrum of colors. The reason for the difference appears to reside in the fact that pattern recognition systems depend upon recognition of different gray scale intensities which can be easily detected within the narrow spectrum light sources such as that produced by LEDs.
  • pattern recognition systems depend upon recognition of different gray scale intensities which can be easily detected within the narrow spectrum light sources such as that produced by LEDs.
  • LEDs there are not commercial available LED light sources which have sufficient candle power to be used with commercially available pattern recognition systems of the type used on semiconductor manufacturing equipment such as wire bonders and mask aligners, etc.
  • Such pattern recognition systems precisely locate a die or a wafer before performing an operational step in the manufacture of the semiconductor part.
  • an LED cluster mount having a plurality of LED receivers.
  • the cluster mount is provided with a central axis and each of the LED receivers in the cluster mount is displaced from the central axis and has a focus axis which is focused across the central axis at predetermined distance from said cluster mount.
  • Each receiver is provided with an adjustable sleeve portion and a tapered (conical) reflector portion which is adapted to concentrate the light emitted from the LEDs at a predetermined spot.
  • Figure 1 showing a typical radiation diagram for commercially available high intensity light emitting diodes.
  • This diagram shows a central or frontal lobe 11 which is symmetrical to the 0° axis 12.
  • the cylindrical coordinates shown as the percent of light intensity versus angle.
  • the side lobes 13 and 14 are shown emitting light which is directed approximately 45° in the negative and positive angular coordinate directions.
  • the information in Figure 1 may be interpreted by reference to axis line 15 shown to be approximately -17° from the zero axis and crosses the frontal lobe or beam at the 50% intensity point.
  • a person looking into the light or lobe along the axis 15 would only encounter 50% of the maximum intensity being emitted along the zero axis as shown in the frontal lobe 11.
  • the intensity of the light is highly dependent on the angle or axis of view looking into the light source.
  • FIG. 2 showing an enlarged high intensity light emitting diode 17.
  • the active element of the diode is not shown.
  • the plastic transparent encapsulating cover 21 is in the shape of a parabaloid attached to a base 18 and shown for purposes of explaining the LED light source. It has been found that an annular ring of light 19 is emitted from the transparent cover 21 and is substantially parallel and columnated. Further, the frontal cone 22 is found to form a slightly diverging beam of light in the frontal area.
  • This information shown in Figure 2 does not conflict with the commercially available information shown in Figure 1 but is more useful in preparing a reflector for concentrating the light being emitted from the LED.
  • FIG. 3 showing an enlarged section of the anode and cathode of a typical stamp lead frame used to support a light emitting diode chip 23.
  • the base of the chip 23 is surface mounted in a bowl shaped receptacle on the first electrode 24 and reflects back light being emitted from the chip 23.
  • the annular ring 19 and the frontal cone 22 are shown in dotted lines for purposes of reference to associated Figure 2.
  • An electrical fine wire 25 is connected to the front face of the chip 23 and electrically connected to the second electrode 26.
  • the electrodes 26 and 24 are shown having leads for connecting the LED 17 to an electrical circuit in both Figures 2 and 3.
  • the cluster mount 27 may be machined from aluminum or made from a plastic material on which highly reflective cones are provided.
  • the reflective cone area comprises a tapered reflector portion 28 and the adjustable sleeve 29 preferably comprises a cylindrical portion.
  • the exact size and dimensions of the LED are known so that the sleeve or receiver portion 29 can be machined to the proper depths so that the aforementioned LED chip 23 is located in the tapered reflector portion at a pre-determined desired position to reflect all of the light being emitted in the form of the aforementioned annular ring 19.
  • any dispersed light or defused light which is not in the frontal cone 22 will also be refocused along the reflected path shown by dotted lines 31 and 32.
  • Each of the receivers 28, 29 has its own focus axis 33, 34 for each of the LEDs.
  • the focus axis of the LEDs preferably crosses over the central axis 35 of the cluster mount 36.
  • the distance from the cluster mount to the area to be illuminated 37 is known and the reflected light from the tapered reflector portion can be focused on this area 37 to provide a complete area or spot of illumination sufficient to completely cover the portion of the chip or wafer being examined by the pattern recognition system.
  • the mount 36 is provided with a threaded hole 38 which receives a support shaft 39 used to support the cluster mount 36.
  • the modified cluster mount 41 is designed to receive a plurality of adjustable pre-focus receivers 42 of the type shown in Figure 7.
  • the aforementioned annular ring of light 19 may be occurring at a point measured from the base 18 which differs.
  • the receiver 42 it is possible to mount the base 18 in the male threaded portion 44 and adjust it in the female portion 43.
  • By adjusting the male portion 44 it is possible to position the annular ring 19 at the optimum position of the highly reflective cone 28.
  • the light being emitted from the adjustable receiver 42 basically is a columnated light source composed of two light cones: 1) a diverging frontal cone 22 and 2) a converging cone of annular ring light 19.
  • the modified cluster mount 41 is provided with a female threaded portion 45 in the rear which is used to attach the cluster mount to a support at a desired distance from the area to be illuminated.
  • cluster mount which may be machined from a metal which may be polished to a high reflective surface
  • mount may be made from other metals or plastic and a highly reflective tapered reflector portion added.
  • tapered reflector portions may be made in the form of a truncated cone or parabaloidical or empirically designed to obtain the properly desired focus of the reflected beam.
  • adjustable pre-focus receivers 42 of the type shown in Figure 7 may be further modified by eliminating the male portion 44 of the receiver and supplying spacing rings and mounting rings against shoulder 46 in portion 43 for the LED 17 so as to obtain the proper position of the LED chip relative to the highly reflective tapered portion 28.
  • cluster mounts may employ more than two and up to six individual LEDs it is possible to mix the color spectrum of the LEDs to achieve a broader range of wave lengths for some specific applications.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
EP91302139A 1990-04-30 1991-03-13 Gruppe von LED's hoher Intensität auf einem Träger Withdrawn EP0456343A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/516,470 US5083192A (en) 1990-04-30 1990-04-30 Cluster mount for high intensity leds
US516470 1990-04-30

Publications (1)

Publication Number Publication Date
EP0456343A1 true EP0456343A1 (de) 1991-11-13

Family

ID=24055737

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91302139A Withdrawn EP0456343A1 (de) 1990-04-30 1991-03-13 Gruppe von LED's hoher Intensität auf einem Träger

Country Status (3)

Country Link
US (1) US5083192A (de)
EP (1) EP0456343A1 (de)
JP (1) JPH0529164U (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4141978A1 (de) * 1991-12-19 1993-06-24 Sel Alcatel Ag Leuchtdiode mit einer umhuellung
WO1995009444A1 (en) * 1993-09-30 1995-04-06 Universal Electronics Inc. Led assembly with enhanced power output
EP1300712A3 (de) * 2001-10-05 2004-02-25 Nicotech Limited Optische Systeme mit Reflektoren
US6759814B2 (en) 2002-03-28 2004-07-06 Eastman Kodak Company Illuminator and method of making same
WO2005045945A1 (en) * 2003-10-31 2005-05-19 Hutchinson Technology Inc. Light source structure
US7012634B2 (en) 2002-03-28 2006-03-14 Eastman Kodak Company System and method for calibrating an image capture device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4313544C2 (de) * 1993-04-24 2001-11-08 Nat Rejectors Gmbh Lichtschranke in einem Münzgerät
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
US6550949B1 (en) 1996-06-13 2003-04-22 Gentex Corporation Systems and components for enhancing rear vision from a vehicle
US20040239243A1 (en) * 1996-06-13 2004-12-02 Roberts John K. Light emitting assembly
US5723881A (en) * 1996-12-04 1998-03-03 Quarton Inc. Dual-beam laser diode
US5865529A (en) * 1997-03-10 1999-02-02 Yan; Ellis Light emitting diode lamp having a spherical radiating pattern
CA2320153A1 (en) * 1997-12-31 1999-07-08 Gentex Corporation Vehicle vision system
DE19818403A1 (de) 1998-04-24 1999-10-28 Horn Hannes Schulze Beleuchtungssystem mit Niederspannungs-Leuchten und -Lampen
US6676278B2 (en) 2000-09-29 2004-01-13 Suncor Stainless, Inc. Super bright LED utility and emergency light
US7052170B2 (en) * 2000-09-29 2006-05-30 Striebel Roman F Super bright LED utility and emergency light
US7168843B2 (en) * 2000-09-29 2007-01-30 Suncor Stainless, Inc. Modular lighting bar
JP4813691B2 (ja) * 2001-06-06 2011-11-09 シチズン電子株式会社 発光ダイオード
CN1663044A (zh) * 2002-06-14 2005-08-31 莱尼股份有限公司 灯和制灯方法
US6902299B2 (en) * 2003-02-27 2005-06-07 Cantronic Systems Inc. Long distance illuminator
CA2518625A1 (en) * 2003-03-12 2004-09-23 Lednium Pty. Ltd. A lamp and a process for producing a lamp
US7722207B2 (en) * 2007-06-01 2010-05-25 Creative Industries, Llc Baluster lighting assembly and method
CN102280566A (zh) * 2010-06-09 2011-12-14 北京汇冠新技术股份有限公司 一种红外发射管及触摸屏
JP4792120B1 (ja) 2010-06-18 2011-10-12 株式会社東芝 テレビジョン装置、電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967672A (ja) * 1982-10-09 1984-04-17 Fuji Xerox Co Ltd 集光型発光ダイオ−ド
EP0184877A1 (de) * 1984-12-07 1986-06-18 Philips Composants Matrix von elektrolumineszierenden Elementen und deren Herstellungsverfahren
US4869580A (en) * 1986-11-21 1989-09-26 Quality Technologies Corporation Immersion cartesian ovoid lens

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US3660713A (en) * 1970-07-13 1972-05-02 Master Specialties Co Lamp assembly having terminal pins for engaging external circuit connectors
FR2440563A1 (fr) * 1978-11-02 1980-05-30 Labo Electronique Physique Dispositif de liaison entre fibres optiques et/ou dispositifs electro-optiques, et procede pour assurer leur positionnement optimal
JPS613764A (ja) * 1984-06-18 1986-01-09 Fuji Photo Film Co Ltd 画像出力装置における半導体光源装置
FR2589629B1 (fr) * 1985-11-05 1987-12-18 Radiotechnique Compelec Composant opto-electronique pour montage en surface et son procede de fabrication
JPH0326536Y2 (de) * 1986-10-01 1991-06-07
DE8713875U1 (de) * 1987-10-15 1988-02-18 Siemens AG, 1000 Berlin und 8000 München Optisches Senderbauelement
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967672A (ja) * 1982-10-09 1984-04-17 Fuji Xerox Co Ltd 集光型発光ダイオ−ド
EP0184877A1 (de) * 1984-12-07 1986-06-18 Philips Composants Matrix von elektrolumineszierenden Elementen und deren Herstellungsverfahren
US4869580A (en) * 1986-11-21 1989-09-26 Quality Technologies Corporation Immersion cartesian ovoid lens

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 173 (E-259)(1610) 09 August 1984, & JP-A-59 67672 (FUJI XEROX KK) 17 April 1984, *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4141978A1 (de) * 1991-12-19 1993-06-24 Sel Alcatel Ag Leuchtdiode mit einer umhuellung
WO1995009444A1 (en) * 1993-09-30 1995-04-06 Universal Electronics Inc. Led assembly with enhanced power output
EP1300712A3 (de) * 2001-10-05 2004-02-25 Nicotech Limited Optische Systeme mit Reflektoren
US6759814B2 (en) 2002-03-28 2004-07-06 Eastman Kodak Company Illuminator and method of making same
US7012634B2 (en) 2002-03-28 2006-03-14 Eastman Kodak Company System and method for calibrating an image capture device
WO2005045945A1 (en) * 2003-10-31 2005-05-19 Hutchinson Technology Inc. Light source structure

Also Published As

Publication number Publication date
JPH0529164U (ja) 1993-04-16
US5083192A (en) 1992-01-21

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