EP0615323A3 - Amplificateur optique à semi-conducteur ayant un fonctionnement indépendant de la polarisation et système de communication optique utilisant ce dernier. - Google Patents

Amplificateur optique à semi-conducteur ayant un fonctionnement indépendant de la polarisation et système de communication optique utilisant ce dernier. Download PDF

Info

Publication number: EP0615323A3
Authority: EP; European Patent Office
Prior art keywords: polarization; communication system; same; functions independently; optical communication
Prior art date: 1993-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP19940103520

Other languages

German (de)

English (en)

Other versions

EP0615323B1 (fr

EP0615323A2 (fr

Inventor

Yukio C O Canon Kabus Furukawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Inc

Original Assignee

Canon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-03-09

Filing date

1994-03-08

Publication date

1994-11-09

1994-03-08 Application filed by Canon Inc filed Critical Canon Inc

1994-09-14 Publication of EP0615323A2 publication Critical patent/EP0615323A2/fr

1994-11-09 Publication of EP0615323A3 publication Critical patent/EP0615323A3/fr

1997-08-06 Application granted granted Critical

1997-08-06 Publication of EP0615323B1 publication Critical patent/EP0615323B1/fr

2014-03-08 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

230000003287 optical effect Effects 0.000 title 2
230000010287 polarization Effects 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
- G02F1/0142—TE-TM mode conversion
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
- H01S2301/145—TM polarisation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Chemical & Material Sciences (AREA)
Nonlinear Science (AREA)
General Physics & Mathematics (AREA)
Nanotechnology (AREA)
Engineering & Computer Science (AREA)
Biophysics (AREA)
Life Sciences & Earth Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Electromagnetism (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Semiconductor Lasers (AREA)
Optical Communication System (AREA)

EP94103520A 1993-03-09 1994-03-08 Amplificateur optique à semi-conducteur ayant un fonctionnement indépendant de la polarisation et système de communication optique utilisant ce dernier Expired - Lifetime EP0615323B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP75352/93		1993-03-09
JP07535293A JP3226063B2 (ja)	1993-03-09	1993-03-09	半導体光増幅器

Publications (3)

Publication Number	Publication Date
EP0615323A2 EP0615323A2 (fr)	1994-09-14
EP0615323A3 true EP0615323A3 (fr)	1994-11-09
EP0615323B1 EP0615323B1 (fr)	1997-08-06

Family

ID=13573768

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP94103520A Expired - Lifetime EP0615323B1 (fr)	1993-03-09	1994-03-08	Amplificateur optique à semi-conducteur ayant un fonctionnement indépendant de la polarisation et système de communication optique utilisant ce dernier

Country Status (4)

Country	Link
US (1)	US5526176A (fr)
EP (1)	EP0615323B1 (fr)
JP (1)	JP3226063B2 (fr)
DE (1)	DE69404707T2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3739471B2 (ja) *	1996-03-01	2006-01-25	富士通株式会社	光可変減衰器
FR2745961B1 (fr) *	1996-03-05	1998-04-10	Alcatel Optronics	Amplificateur optique a semi-conducteur
FR2813449B1 (fr) *	2000-08-22	2003-01-17	Cit Alcatel	Dispositif optique amplificateur
JP2004070338A (ja) *	2002-07-23	2004-03-04	Canon Inc	光波長変換装置、及び光波長変換方法
JP4359035B2 (ja)	2002-11-21	2009-11-04	富士通株式会社	光中継器
JP4574396B2 (ja) *	2005-03-02	2010-11-04	キヤノン株式会社	光偏向器
JP2007316443A (ja) *	2006-05-26	2007-12-06	Canon Inc	光偏向器、及びそれを用いた光学機器
EP2670072B1 (fr) *	2011-01-24	2018-08-15	Nec Corporation	Dispositif de réception optique de multiplexage à onde polarisée et procédé de réception optique de multiplexage à onde polarisée

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02235449A (ja) *	1989-03-09	1990-09-18	Canon Inc	光通信方式
JPH03184388A (ja) *	1989-12-13	1991-08-12	Canon Inc	Ｔｍレーザー
EP0470523A2 (fr) *	1990-08-04	1992-02-12	Canon Kabushiki Kaisha	Dispositif de conversion de polarisation optique destiné à être utilisé comme isolateur, modulateur et analogue
JPH0590703A (ja) *	1991-09-30	1993-04-09	Nippon Telegr & Teleph Corp <Ntt>	半導体光増幅器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2980723B2 (ja) *	1990-06-01	1999-11-22	キヤノン株式会社	光増幅装置
EP0543061B1 (fr) *	1991-11-20	1998-07-15	Hamamatsu Photonics K.K.	Polariseur amplificateur de lumière
JP3226061B2 (ja) *	1993-02-19	2001-11-05	キヤノン株式会社	偏光無依存な半導体光増幅器及びそれを用いた光通信システム

1993
- 1993-03-09 JP JP07535293A patent/JP3226063B2/ja not_active Expired - Fee Related
1994
- 1994-03-01 US US08/203,355 patent/US5526176A/en not_active Expired - Fee Related
- 1994-03-08 EP EP94103520A patent/EP0615323B1/fr not_active Expired - Lifetime
- 1994-03-08 DE DE69404707T patent/DE69404707T2/de not_active Expired - Fee Related

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02235449A (ja) *	1989-03-09	1990-09-18	Canon Inc	光通信方式
JPH03184388A (ja) *	1989-12-13	1991-08-12	Canon Inc	Ｔｍレーザー
EP0470523A2 (fr) *	1990-08-04	1992-02-12	Canon Kabushiki Kaisha	Dispositif de conversion de polarisation optique destiné à être utilisé comme isolateur, modulateur et analogue
JPH0590703A (ja) *	1991-09-30	1993-04-09	Nippon Telegr & Teleph Corp <Ntt>	半導体光増幅器

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
E.R. RANALLI ET AL: "Narrow bandwidth electrooptic polarization modulator using GaAs Quantum well waveguides", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 3, no. 4, April 1991 (1991-04-01), NEW YORK US, pages 320 - 323, XP000227553, DOI: doi:10.1109/68.82099 *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 550 (E - 1009) 6 December 1990 (1990-12-06) *
PATENT ABSTRACTS OF JAPAN vol. 15, no. 438 (E - 1130) 8 November 1991 (1991-11-08) *
PATENT ABSTRACTS OF JAPAN vol. 17, no. 434 (E - 1412) 11 August 1993 (1993-08-11) *
T SAITOH ET AL: "Structural design of polarization insensitive 1.55 travelling wave semiconductor laser amplifiers", TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS AND COMMUNICATION ENGINEERS OF JAPAN, SECTION E, vol. E71, no. 5, May 1988 (1988-05-01), TOKYO JP, pages 482 - 484 *

Also Published As

Publication number	Publication date
DE69404707D1 (de)	1997-09-11
US5526176A (en)	1996-06-11
JP3226063B2 (ja)	2001-11-05
DE69404707T2 (de)	1998-01-15
EP0615323B1 (fr)	1997-08-06
EP0615323A2 (fr)	1994-09-14
JPH06260726A (ja)	1994-09-16

Legal Events

Date	Code	Title	Description
1994-07-29	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1994-09-14	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): DE FR GB
1994-09-20	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
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1995-05-17	17P	Request for examination filed	Effective date: 19950321
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1996-05-15	17Q	First examination report despatched	Effective date: 19960401
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