EP0664591A2 - Transmetteur laser à diode avec contrôle de rafale - Google Patents

Transmetteur laser à diode avec contrôle de rafale Download PDF

Info

Publication number: EP0664591A2
Authority: EP; European Patent Office
Prior art keywords: connection; input; laser diode; voltage; diode
Prior art date: 1994-01-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP95100505A

Other languages

German (de)

English (en)

Other versions

EP0664591B1 (fr

EP0664591A3 (fr

Inventor

Uwe Dipl.-Ing. Lehmann

Johannes Dipl.-Ing. Schweinberger

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Siemens Corp

Original Assignee

Siemens AG

Siemens Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-01-24

Filing date

1995-01-16

Publication date

1995-07-26

1995-01-16 Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG

1995-07-26 Publication of EP0664591A2 publication Critical patent/EP0664591A2/fr

1996-01-03 Publication of EP0664591A3 publication Critical patent/EP0664591A3/fr

2000-04-05 Application granted granted Critical

2000-04-05 Publication of EP0664591B1 publication Critical patent/EP0664591B1/fr

2015-01-16 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06835—Stabilising during pulse modulation or generation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/504—Laser transmitters using direct modulation
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation

Definitions

the invention relates to a method for burst control of a laser diode transmitter and a laser diode transmitter for carrying out the method.
the semiconductor laser diodes used in laser diode transmitters have characteristics for converting the electrical current into the light to be emitted, the usable range of which lies above a certain threshold current.
This threshold current depends on the one hand on the one hand and on the other hand changes strongly with temperature and during the service life.
the steepness of the part of the converter characteristic curve used as the working characteristic curve is also heavily dependent on the temperature and is subject to considerable variation in specimens. Therefore, in addition to a regulated bias current, a regulated modulation current is usually also supplied to the laser diodes, a regulation signal frequently being used for regulation, which is generated by a monitor photodiode optically coupled to the laser diode.
laser control circuits known from DE A1 2847182 work in principle with two mutually dependent control loops, the control information of which relating to the average light output and the peak value of the modulation signal are represented by DC voltage signals.
the control criteria are output signals from low-pass filters, which are further processed in appropriately slow control loops. Smooth operation of the laser diode transmitter is therefore a prerequisite for the function of the control.
burst mode for example for the transmission from the subscriber-oriented terminal to the central office, in which pulse or data packets are transmitted by means of optical burst signals.
burst signals because of the long settling times, the transmission of burst signals with these known laser diode transmitters is not possible, since the signal transmission would fall into the start-up phase of the control.
the object of the present invention is therefore to further develop the above-mentioned method for laser diode regulation and the corresponding laser diode transmitter so that the transmission of comparatively short burst signals, for example with a duration of 1-10 ⁇ s with burst intervals of 1 ⁇ s to 5s, also during the network measurement phase immediately after initial start-up with low pulse distortion.
the laser diode transmitter shown in FIG. 1 contains a D flip-flop DFF, the D input of which has an input HPE for a signal corresponding to the logic high level and its trigger Input is connected to an input LSE for a signal for laser transmitter release.
the signal for laser transmitter release is generated by an external control very shortly before the planned transmission of the optical burst signals.
An input for a switch-on signal of a charging multiplexer LMUX and the control input of a controlled switch VSS, which is connected between a connection -Ub for a negative operating voltage and the corresponding operating voltage connection of a bias current source VSQ, are also connected to the input LSE.
a control input of the load multiplexer LMUX and a control input of a signal multiplexer DMUX are connected to the non-inverting output Q of the D flip-flop.
An input connection of the signal multiplexer DMUX is connected to the input HPE for a high level signal
a further input connection of the signal multiplexer DMUX is connected to the data signal input DSE, at which the data packet to be transmitted is caused by the external control, a time ⁇ after the generation of the signal to the laser transmitter - Approval pending.
the signal multiplexer LMUX represents a controlled changeover switch with three switch positions, with the output of the charge multiplexer being connected to the input terminal LN in the upper switch position, at which an externally generated charging voltage is present.
the charge multiplexer LMUX is connected to reference potential, so that in this switch position a discharge process of the voltage store SS connected to the output of the charge multiplexer is possible.
the voltage store SS for example in the form of a capacitor, is additionally connected to a control input of a modulation current source MSQ, the current generated by this current source changing linearly with the voltage at the voltage store SS.
the modulation current source MSQ is also connected to the negative operating voltage source -Ub and via a modulator MO in the form of a controlled switch with the laser diode LD Laser diode transmitter connected.
the modulator MO is controlled by the output of the signal multiplexer DMUX, which is connected to a corresponding control signal input of the modulator.
the bias current source VSQ additionally connected to the laser diode generates a bias current for the laser diode, which is regulated by the temperature control TR as a function of the temperature on an outer surface of the laser diode.
the light generated by the laser diode LD is coupled on the one hand for signal transmission into an optical fiber LWL, on the other side of the laser diode an additional monitor photodiode is coupled to the laser diode and generates a photocurrent depending on the respective light output of the laser diode, which is a photocurrent amplifier V is fed.
the laser diode and the monitor photodiode are connected in the usual way to a source for a positive operating voltage + Ub.
a voltage signal corresponding to the average light output of the laser diode is emitted from the photocurrent amplifier V to a signal input of a fast voltage comparator KO, the comparison signal input of which is connected to a source for a reference voltage Uref.
the level changes at its output and thus at the directly connected reset input R of the D flip-flop and also at its non-inverting output Q.
the time or pulse diagram shown in FIG. 2 is used to explain the mode of operation of FIG. 1.
the upper line labeled LSE shows the course of the laser transmitter enable signal present at the corresponding input, by means of which the laser transmitter is activated and which switches over the clock input of the D flip-flop.
the level at the non-inverting output Q of the D flip-flop thus jumps to a high level, as shown in the second line labeled UQ.
the charging multiplexer LMUX is switched so that a charging current flows to the charging multiplexer output and thus to the voltage memory SS via the input labeled LN.
the third line, labeled SS shows the voltage profile at the voltage memory SS and thus also at the control signal input of the modulation current source MSQ.
the charging circuit for the voltage circuit SS is designed in such a way that the voltage at the voltage memory and thus also the modulation current shown in the line MI increase linearly regardless of the data content.
the line for the modulation current shows the total current flowing through the laser diode, which is denoted by LDI. It can be seen that this laser diode current is composed of the modulation current and a direct current component, which represents the bias current VI for setting the operating point of the laser diode.
the monitor photodiode MD Depending on the light output, the monitor photodiode MD generates a photocurrent, which is converted by the photocurrent amplifier V into a voltage UV, which is shown in the correspondingly labeled line and is compared by the comparator KO with the externally generated reference voltage Uref. As long as the voltage UV is less than the reference voltage, there is a high level at the comparator output, which is switched off again if the two comparator voltages are identical; the course of this level UK is shown in the bottom line of FIG. 2.
FIG. 3 shows the circuit parts of the block diagram according to FIG. 1 relating to the modulation current control in detail without the monitor photodiode, the photocurrent amplifier and the comparator.
the clock input of the D flip-flop DFF is in turn connected to the input connection LSE for the laser transmitter enable signal and the connection HPE for a high level signal is connected to its D input, and the reset input R is also connected to the output of the comparator KO (not shown) .
the charging multiplexer DMUX is implemented by the first and second diodes D1, D2, the charging resistor RL and the discharge capacitor CE.
the voltage memory SS in the form of a capacitor SSK and the gate terminal of a first transistor TR1 are connected to the non-inverting output Q of the D flip-flop via a series circuit comprising the charging resistor RL and the first diode D1.
the source terminal of this transistor TR1 is connected to reference potential via a source resistor RS, while the drain terminal of the first transistor TR1 is connected to the emitter terminals of a second and a third transistor TR2, TR3.
the second and the third transistor TR2, TR3 form an emitter-coupled differential amplifier, which is driven in push-pull with the data D to be transmitted and in which the laser diode is optionally connected to the collector terminal of the second or third transistor TR2, TR3.
a series resistor RV is connected, which is led to the connection for the positive operating voltage + UB and which, together with the charging resistor RL, results in a voltage divider through which the positive operating voltage is reduced to the size of the Threshold voltage of the field effect transistor TR1 is reduced, this ensures that the first transistor TR1 always remains in the active region.
the first diode D1 is continuous during the charging phase of the voltage storage capacitor SSK, and this diode is blocked when the holding phase is reached.
the series circuit comprising a second diode D2 and discharge capacitor CE, which is additionally connected to the voltage memory, is blocked, since the discharge capacitor CE is connected to the input terminal LSE for the laser transmitter enable signal and this during the hold phase - as from line 1 of Figure 2 shows - is at high level.
the low or L level is present at the input terminal LSE, so that the voltage storage capacitor SSK can discharge to a voltage that is only dependent on the capacitance ratio via the series connection of the second diode D2 and the discharge capacitor CE of the voltage storage capacitor and the discharge capacitor and the voltage at the start of discharge. This ensures that the discharge process is largely independent of the subsequent burst pauses.
a third diode D3 is connected to the connection between the second diode D2 and the discharge capacitor CE, the other connection of which is led to the connection for the positive operating voltage + UB.
the third diode D3 is polarized so that the discharge capacitor CE is discharged again at this burst signal with the high level of the laser transmitter enable signal at the next burst signal.
the targeted discharge of both the voltage storage capacitor SSK and the discharge capacitor CE ensures that overcharging of the voltage storage and thus an excessively high modulation current is excluded, the charging pulse duration ⁇ , i.e. the time until the maximum modulation current is reached, is also set such that it is always greater than the delay in the control loop.

Landscapes

Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Networks & Wireless Communication (AREA)
Signal Processing (AREA)
Semiconductor Lasers (AREA)
Optical Communication System (AREA)

EP95100505A 1994-01-24 1995-01-16 Transmetteur laser à diode avec contrôle de rafale Expired - Lifetime EP0664591B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE4401884A DE4401884A1 (de)	1994-01-24	1994-01-24	Laserdiodensender mit Burstregelung
DE4401884		1994-01-24

Publications (3)

Publication Number	Publication Date
EP0664591A2 true EP0664591A2 (fr)	1995-07-26
EP0664591A3 EP0664591A3 (fr)	1996-01-03
EP0664591B1 EP0664591B1 (fr)	2000-04-05

Family

ID=6508499

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP95100505A Expired - Lifetime EP0664591B1 (fr)	1994-01-24	1995-01-16	Transmetteur laser à diode avec contrôle de rafale

Country Status (3)

Country	Link
EP (1)	EP0664591B1 (fr)
AT (1)	ATE191588T1 (fr)
DE (2)	DE4401884A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2000004655A1 (fr) *	1998-07-15	2000-01-27	Maxim Integrated Products, Inc.	Controle local pour emetteurs optiques en mode rafale
US7352784B2 (en)	2004-07-20	2008-04-01	Jds Uniphase Corporation	Laser burst boosting method and apparatus
EP2568547A1 (fr)	2011-09-06	2013-03-13	Leica Geosystems AG	Pilote laser sans moniteur à diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59117336A (ja) *	1982-12-24	1984-07-06	Fujitsu Ltd	レ−ザダイオ−ド駆動回路
US4985896A (en) *	1985-03-29	1991-01-15	Canon Kabushiki Kaisha	Laser driving device
US4845720A (en) *	1987-10-20	1989-07-04	Matsushita Electric Industrial Co., Ltd.	Semiconductor laser control circuit
US4916706A (en) *	1988-06-14	1990-04-10	Brother Kogyo Kabushiki Kaisha	Excitation system for exciting a semiconductor laser device

1994
- 1994-01-24 DE DE4401884A patent/DE4401884A1/de not_active Withdrawn
1995
- 1995-01-16 DE DE59508108T patent/DE59508108D1/de not_active Expired - Lifetime
- 1995-01-16 EP EP95100505A patent/EP0664591B1/fr not_active Expired - Lifetime
- 1995-01-16 AT AT95100505T patent/ATE191588T1/de not_active IP Right Cessation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2000004655A1 (fr) *	1998-07-15	2000-01-27	Maxim Integrated Products, Inc.	Controle local pour emetteurs optiques en mode rafale
US6188498B1 (en)	1998-07-15	2001-02-13	Maxim Integrated Products, Inc.	Local control for burst mode optical transmitters
US7352784B2 (en)	2004-07-20	2008-04-01	Jds Uniphase Corporation	Laser burst boosting method and apparatus
EP2568547A1 (fr)	2011-09-06	2013-03-13	Leica Geosystems AG	Pilote laser sans moniteur à diode
WO2013034555A1 (fr)	2011-09-06	2013-03-14	Leica Geosystems Ag	Télémètre électro-optique
US9753139B2 (en)	2011-09-06	2017-09-05	Leica Geosystems Ag	Electro-optical distance measuring device

Also Published As

Publication number	Publication date
DE59508108D1 (de)	2000-05-11
EP0664591B1 (fr)	2000-04-05
DE4401884A1 (de)	1995-07-27
EP0664591A3 (fr)	1996-01-03
ATE191588T1 (de)	2000-04-15

Legal Events

Date	Code	Title	Description
1995-06-09	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1995-07-26	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): AT BE CH DE FR GB IT LI
1995-11-13	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1996-01-03	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): AT BE CH DE FR GB IT LI
1996-07-03	17P	Request for examination filed	Effective date: 19960506
1998-10-07	17Q	First examination report despatched	Effective date: 19980819
1999-07-13	GRAG	Despatch of communication of intention to grant	Free format text: ORIGINAL CODE: EPIDOS AGRA
1999-08-04	RTI1	Title (correction)	Free format text: DIODE LASERTRANSMITTER WITH BURST CONTROL
1999-08-16	GRAG	Despatch of communication of intention to grant	Free format text: ORIGINAL CODE: EPIDOS AGRA
1999-08-16	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
1999-08-18	RTI1	Title (correction)	Free format text: DIODE LASERTRANSMITTER WITH BURST CONTROL
1999-11-16	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
2000-02-18	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
2000-03-29	RIC1	Information provided on ipc code assigned before grant	Free format text: 7H 01S 5/068 A, 7H 01S 5/06 B, 7H 04B 10/145 B
2000-04-05	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): AT BE CH DE FR GB IT LI
2000-04-05	REF	Corresponds to:	Ref document number: 191588 Country of ref document: AT Date of ref document: 20000415 Kind code of ref document: T
2000-04-14	REG	Reference to a national code	Ref country code: CH Ref legal event code: NV Representative=s name: SIEMENS SCHWEIZ AG Ref country code: CH Ref legal event code: EP
2000-05-11	REF	Corresponds to:	Ref document number: 59508108 Country of ref document: DE Date of ref document: 20000511
2000-06-20	ITF	It: translation for a ep patent filed
2000-07-12	GBT	Gb: translation of ep patent filed (gb section 77(6)(a)/1977)	Effective date: 20000615
2000-07-28	ET	Fr: translation filed
2001-02-02	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
2001-02-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
2001-03-21	26N	No opposition filed
2002-01-01	REG	Reference to a national code	Ref country code: GB Ref legal event code: IF02
2008-03-31	REG	Reference to a national code	Ref country code: CH Ref legal event code: PUE Owner name: NOKIA SIEMENS NETWORKS GMBH & CO. KG Free format text: SIEMENS AKTIENGESELLSCHAFT#WITTELSBACHERPLATZ 2#80333 MUENCHEN (DE) -TRANSFER TO- NOKIA SIEMENS NETWORKS GMBH & CO. KG#ST.-MARTIN-STRASSE 76#81541 MUENCHEN (DE) Ref country code: CH Ref legal event code: NV Representative=s name: SIEMENS SCHWEIZ AG
2008-04-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: CH Payment date: 20080115 Year of fee payment: 14
2008-05-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: IT Payment date: 20080125 Year of fee payment: 14
2008-06-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: AT Payment date: 20080116 Year of fee payment: 14
2008-08-29	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: BE Payment date: 20080304 Year of fee payment: 14
2008-12-12	REG	Reference to a national code	Ref country code: FR Ref legal event code: TP
2009-02-25	REG	Reference to a national code	Ref country code: GB Ref legal event code: 732E Free format text: REGISTERED BETWEEN 20090129 AND 20090204
2009-03-13	REG	Reference to a national code	Ref country code: CH Ref legal event code: PCAR Free format text: SIEMENS SCHWEIZ AG;INTELLECTUAL PROPERTY FREILAGERSTRASSE 40;8047 ZUERICH (CH)
2009-08-31	REG	Reference to a national code	Ref country code: CH Ref legal event code: PL
2009-10-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090131 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090131 Ref country code: AT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090116
2010-02-26	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090131
2011-03-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090116
2014-04-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 20140129 Year of fee payment: 20
2014-05-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 20140117 Year of fee payment: 20
2014-06-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 20140127 Year of fee payment: 20
2015-01-17	REG	Reference to a national code	Ref country code: DE Ref legal event code: R071 Ref document number: 59508108 Country of ref document: DE
2015-02-04	REG	Reference to a national code	Ref country code: GB Ref legal event code: PE20 Expiry date: 20150115
2015-05-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20150115

Publication	Publication Date	Title
DE69735254T2 (de)	2006-11-16	Treiberschaltung einer lichtemittierenden Vorrichtung
DE69311755T2 (de)	1998-01-08	Steuerschaltung für lichtemittierende Vorrichtung
EP0762651B1 (fr)	2003-11-26	Circuit d'attaque pour une diode photoémettrice
DE3434217C2 (fr)	1988-10-06
DE69023572T2 (de)	1996-03-28	Energieversorgungskreis für Laserdiode in optischem Speichergerät.
DE2847182B2 (de)	1981-07-09	Verfahren zur Modulationsstromregelung von Laserdioden
DE2813513A1 (de)	1978-10-05	Vorrichtung zum stabilisieren von ausgangsdaten eines injektionslasers
EP0176800A1 (fr)	1986-04-09	Procédé et dispositif pour contrôler l'état d'un thyristor blocable
DE102005051825B4 (de)	2016-02-18	Treiberschaltung für eine Licht emittierende Diode und damit ausgerüstete Übertragungseinrichtung
EP0419728A1 (fr)	1991-04-03	Circuit pour alimentation à découpage du type à récupération à fréquence fixe
DE3405936C2 (fr)	1990-07-12
DE19522956C2 (de)	1997-07-17	Umrichter
EP0664591B1 (fr)	2000-04-05	Transmetteur laser à diode avec contrôle de rafale
DE4106690A1 (de)	1992-09-10	Verfahren zur steuerung einer last sowie eine schaltungsanordnung zur durchfuehrung dieses verfahrens mit einem igbt-transistor
DE10393795T5 (de)	2005-11-03	Impulserzeugungsschaltung und Abtastschaltung
DE102005013494B4 (de)	2008-01-10	Optischer Empfänger
EP0249270A2 (fr)	1987-12-16	Modulateur de largeur d'impulsions
CH616519A5 (en)	1980-03-31	Arrangement for controlling a light source.
EP0899860A2 (fr)	1999-03-03	Etage de sortie de puissance avec opération à modulation de largeur d'impulsion et opération à conduction continue
EP4399774A1 (fr)	2024-07-17	Dispositif de génération d'une tension de circuit de sortie de courant et système laser
DE102005033240B4 (de)	2012-08-02	Schaltungsanordnung zum Starten und Betreiben einer Entladungslampe
DE2846710A1 (de)	1979-05-03	Einrichtung zur signaluebertragung mittels optokoppler
DE10320333B4 (de)	2009-06-18	Elektrische Schaltungen für eine direkt modulierte Halbleiterstrahlungsquelle
DE4318857C1 (de)	1994-07-28	Treiberstufe für ein optisches Sendeelement
DE3636154A1 (de)	1987-05-14	Verbesserter verzoegerungsschaltkreis fuer inverter