EP0833193A3 - Appareil d'exposition - Google Patents

Appareil d'exposition Download PDF

Info

Publication number
EP0833193A3
EP0833193A3 EP97116262A EP97116262A EP0833193A3 EP 0833193 A3 EP0833193 A3 EP 0833193A3 EP 97116262 A EP97116262 A EP 97116262A EP 97116262 A EP97116262 A EP 97116262A EP 0833193 A3 EP0833193 A3 EP 0833193A3
Authority
EP
European Patent Office
Prior art keywords
illumination
sensor
detachable
intensity
sensors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97116262A
Other languages
German (de)
English (en)
Other versions
EP0833193A2 (fr
EP0833193B1 (fr
Inventor
Kenji c/o Nikon Corporation Intell. Prop. Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Publication of EP0833193A2 publication Critical patent/EP0833193A2/fr
Publication of EP0833193A3 publication Critical patent/EP0833193A3/fr
Application granted granted Critical
Publication of EP0833193B1 publication Critical patent/EP0833193B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP97116262A 1996-09-18 1997-09-18 Appareil d'exposition Expired - Lifetime EP0833193B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP245809/96 1996-09-18
JP8245809A JPH1092722A (ja) 1996-09-18 1996-09-18 露光装置
JP24580996 1996-09-18

Publications (3)

Publication Number Publication Date
EP0833193A2 EP0833193A2 (fr) 1998-04-01
EP0833193A3 true EP0833193A3 (fr) 1998-04-08
EP0833193B1 EP0833193B1 (fr) 2005-04-13

Family

ID=17139174

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97116262A Expired - Lifetime EP0833193B1 (fr) 1996-09-18 1997-09-18 Appareil d'exposition

Country Status (4)

Country Link
US (1) US6115107A (fr)
EP (1) EP0833193B1 (fr)
JP (1) JPH1092722A (fr)
KR (1) KR100523091B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108205242B (zh) * 2016-12-20 2023-08-18 东京毅力科创株式会社 光处理装置、涂敷、显影装置、光处理方法和存储介质

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3101613B2 (ja) * 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
DE69933903T2 (de) * 1998-04-14 2007-05-24 Asml Netherlands B.V. Lithograpischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
US6819414B1 (en) 1998-05-19 2004-11-16 Nikon Corporation Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method
EP1079223A4 (fr) * 1998-05-19 2002-11-27 Nikon Corp Instrument et procede de mesure d'aberrations, appareil et procede de sensibilisation par projection incorporant cet instrument, et procede de fabrication de dispositifs associe
DE19827602A1 (de) * 1998-06-20 1999-12-23 Zeiss Carl Fa Verfahren zur Korrektur nicht-rotationssymmetrischer Bildfehler
EP1014197B1 (fr) * 1998-12-16 2006-11-08 ASML Netherlands B.V. Appareil de projection lithographique
WO2000072375A1 (fr) * 1999-05-20 2000-11-30 Nikon Corporation Contenant pour appareil d'exposition de support, procede de fabrication de dispositif et appareil de fabrication de dispositif
DE19926086C1 (de) * 1999-06-08 2001-01-18 Oriental System Technology Inc Verschluß für ein Strahlungsthermometer
JP2001196293A (ja) * 2000-01-14 2001-07-19 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US6366308B1 (en) * 2000-02-16 2002-04-02 Ultratech Stepper, Inc. Laser thermal processing apparatus and method
JP4289755B2 (ja) * 2000-02-24 2009-07-01 キヤノン株式会社 露光量制御方法、デバイス製造方法および露光装置
JP2001338868A (ja) * 2000-03-24 2001-12-07 Nikon Corp 照度計測装置及び露光装置
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
KR100691570B1 (ko) * 2000-10-05 2007-03-12 에이에스엠엘 유에스, 인크. 탈착 가능한 센서
US6548797B1 (en) 2000-10-20 2003-04-15 Nikon Corporation Apparatus and method for measuring a wavefront using a screen with apertures adjacent to a multi-lens array
JP2002134393A (ja) * 2000-10-24 2002-05-10 Mitsubishi Electric Corp 露光装置、露光方法およびその露光方法を用いて製造した半導体装置
JP3742000B2 (ja) * 2000-11-30 2006-02-01 富士通株式会社 プレス装置
JP2002203768A (ja) * 2000-12-28 2002-07-19 Toshiba Corp 露光方法、露光システム及び記録媒体
EP1316847A1 (fr) * 2001-11-30 2003-06-04 Degraf s.r.l. Machine pour l'exposition de plaques d'impression flexographiques à la lumière UV
EP1319987B1 (fr) * 2001-12-12 2007-02-28 ASML Netherlands B.V. Appareil lithographique, méthode pour la fabrication d'un dispositif, et programme informatique correspondant
EP1319982A1 (fr) 2001-12-12 2003-06-18 ASML Netherlands B.V. Appareil lithographique, procédé pour la production d un dispositif et programme d ordinateur
DE10233175A1 (de) * 2002-07-22 2004-02-12 Leica Microsystems Semiconductor Gmbh Vorrichtung und Verfahren zum Kalibrieren eines opto-elektronischen Sensors und zur Vermessung von Strukturen auf einem Substrat
KR100620170B1 (ko) 2002-12-30 2006-09-01 동부일렉트로닉스 주식회사 노광장치의 조명계
SG125101A1 (en) * 2003-01-14 2006-09-29 Asml Netherlands Bv Level sensor for lithographic apparatus
EP1524558A1 (fr) 2003-10-15 2005-04-20 ASML Netherlands B.V. Appareil lithographique et procédé pour la production d'un dispositif
DE602005025457D1 (de) 2004-03-22 2011-02-03 Ube Industries Nicht-wässrige elektrolytlösung und lithium-sekundärbatterie dieselbe verwendend
JP4622568B2 (ja) * 2005-02-14 2011-02-02 株式会社ニコン 露光方法、露光装置、反射板、反射率計測センサの校正方法及びマイクロデバイスの製造方法
US20060219947A1 (en) * 2005-03-03 2006-10-05 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
US8547522B2 (en) * 2005-03-03 2013-10-01 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
JP2006303193A (ja) * 2005-04-20 2006-11-02 Canon Inc 露光装置、較正方法、およびデバイス製造方法
JP4924421B2 (ja) * 2005-05-23 2012-04-25 株式会社ニコン センサの校正方法、露光方法、露光装置、デバイス製造方法、および反射型マスク
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US8477283B2 (en) 2006-05-10 2013-07-02 Nikon Corporation Exposure apparatus and device manufacturing method
US7848835B2 (en) * 2006-06-02 2010-12-07 Cymer, Inc. High power laser flat panel workpiece treatment system controller
JP5692949B2 (ja) * 2006-11-29 2015-04-01 キヤノン株式会社 露光装置
DE102008042463B3 (de) * 2008-09-30 2010-04-22 Carl Zeiss Smt Ag Optische Messvorrichtung für eine Projektionsbelichtungsanlage
CN102128678B (zh) * 2010-01-12 2013-07-17 上海微电子装备有限公司 一种光学能量传感器测校装置及方法
JP2015510269A (ja) * 2012-02-10 2015-04-02 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及びシステム、リソグラフィ装置を較正する方法、及びデバイス製造方法
JP6202993B2 (ja) * 2013-11-05 2017-09-27 キヤノン株式会社 露光装置、露光方法、およびデバイスの製造方法
JP6813521B2 (ja) 2018-02-08 2021-01-13 ファナック株式会社 温度計測装置
CN115803687A (zh) * 2020-07-10 2023-03-14 Asml荷兰有限公司 用于调节光学装置的系统和方法
WO2025218972A1 (fr) * 2024-04-16 2025-10-23 Asml Netherlands B.V. Module pour appareil lithographique, appareil lithographique et procédé de serrage d'élément capteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759115A (en) * 1980-09-26 1982-04-09 Terumo Corp Calibrating data writing method applied externally to information measuring device and information measuring device stored with calibra ting data
JPS60188950A (ja) * 1984-03-08 1985-09-26 Canon Inc 光量制御装置の校正方法
US4927266A (en) * 1987-03-30 1990-05-22 Anritsu Corporation Optical signal generating apparatus and optical power meter calibrating system using the same
JPH0787262A (ja) * 1993-09-09 1995-03-31 Nec Corp 固体撮像素子およびその測定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443117A (en) * 1980-09-26 1984-04-17 Terumo Corporation Measuring apparatus, method of manufacture thereof, and method of writing data into same
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS6052852A (ja) * 1983-09-02 1985-03-26 Nippon Kogaku Kk <Nikon> 露光量制御装置の較正方法
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP3391940B2 (ja) * 1995-06-26 2003-03-31 キヤノン株式会社 照明装置及び露光装置
JP3487383B2 (ja) * 1995-07-06 2004-01-19 株式会社ニコン 露光装置及びそれを用いる素子製造方法
KR100210569B1 (ko) * 1995-09-29 1999-07-15 미따라이 하지메 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759115A (en) * 1980-09-26 1982-04-09 Terumo Corp Calibrating data writing method applied externally to information measuring device and information measuring device stored with calibra ting data
JPS60188950A (ja) * 1984-03-08 1985-09-26 Canon Inc 光量制御装置の校正方法
US4927266A (en) * 1987-03-30 1990-05-22 Anritsu Corporation Optical signal generating apparatus and optical power meter calibrating system using the same
JPH0787262A (ja) * 1993-09-09 1995-03-31 Nec Corp 固体撮像素子およびその測定方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 137 (P - 130) 24 July 1982 (1982-07-24) *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 041 (P - 429) 18 February 1986 (1986-02-18) *
PATENT ABSTRACTS OF JAPAN vol. 095, no. 006 31 July 1995 (1995-07-31) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108205242B (zh) * 2016-12-20 2023-08-18 东京毅力科创株式会社 光处理装置、涂敷、显影装置、光处理方法和存储介质

Also Published As

Publication number Publication date
KR100523091B1 (ko) 2005-12-28
EP0833193A2 (fr) 1998-04-01
US6115107A (en) 2000-09-05
JPH1092722A (ja) 1998-04-10
EP0833193B1 (fr) 2005-04-13
KR19980024238A (ko) 1998-07-06

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