EP0834199A1 - Cellule solaire a emetteur pourvu d'une texture superficielle et son procede de fabrication - Google Patents

Cellule solaire a emetteur pourvu d'une texture superficielle et son procede de fabrication

Info

Publication number
EP0834199A1
EP0834199A1 EP96918588A EP96918588A EP0834199A1 EP 0834199 A1 EP0834199 A1 EP 0834199A1 EP 96918588 A EP96918588 A EP 96918588A EP 96918588 A EP96918588 A EP 96918588A EP 0834199 A1 EP0834199 A1 EP 0834199A1
Authority
EP
European Patent Office
Prior art keywords
solar cell
ribs
doping
doped
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96918588A
Other languages
German (de)
English (en)
Inventor
Wolfram Wettling
Stefan Glunz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Publication of EP0834199A1 publication Critical patent/EP0834199A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to a solar cell with an emitter layer which is applied to a base material and has a surface texture which is characterized by intersecting ribs which taper to the top, and to a method for producing such a rib .
  • Solar cells are components that convert sunlight or other light into electrical energy.
  • a solar cell consists of a semiconductor material that has a pn junction. Incident light creates positive and negative charge carriers in the semiconductor, which are separated by the pn junction. The electrical power generated in this way is removed via metallic contacts on the n and p sides.
  • the subject matter of this invention is limited to solar cells with a high efficiency of> 20%.
  • These electrical components also referred to as “high-efficiency” solar cells, are preferably made of silicon.
  • “High-efficiency” solar cells are characterized in particular by the fact that minimal losses occur in the conversion of light into electricity. This is made possible by applying various measures, which are described in detail by MA Green, "High-efficiency Silicon solar cells", TransTech Publications, Aedermannsdorf, Switzerland (1987), for example.
  • the structure of the "high-performance solar cell” known per se can be seen in FIG.
  • the PERL cell has a textured surface S which is coated with a silicon oxide layer Si0 2 for reasons of electrical passivation and the anti-reflective effect.
  • the emitter layer E Under the silicon oxide layer is the emitter layer E, which has areas of high n + + doping and normally doped n + doping areas.
  • the emitter layer is three-dimensionally formed by selective etching processes in such a way that its surface contour corresponds to the impression of many four-sided pyramids arranged next to one another. Only at points where the emitter layer comes into contact with a metal contact strip M is the emitter layer deeper and also provided with higher doping.
  • the typical shape of the characteristic surface texture of the emitter layer means that the light that has penetrated into the solar cell through the emitter layer penetrates into the cell with lower losses and, on the other hand, cannot so easily exit from the inside of the solar cell again. In addition to the anti-reflective effect of the top silicon oxide layer, this also contributes to the electrical passivation of the surface.
  • textured surface of the PERL cell is the two-stage n-doping of the emitter, which is highly doped under the contacts of the metal bridge and thus has low resistance and is also deeper than in the areas under the "inverted pyramids" on which the Emitter layer less doped and flatter.
  • base contact electrodes BE are provided on the back of the solar cell opposite the emitter layer.
  • Two photomask steps are necessary for the production of the PERL solar cell: an etching step, for producing the rib-like surface texture, and a local diffusion step, for introducing the depths n + + diffusion areas at locations over which the metal contact bridges are attached.
  • a third process step the surface contour of the solar cell is then covered with an all-over n + diffusion layer.
  • the invention is based on the object, starting from the known structure of a so-called PERL solar cell, to improve its properties so that, on the one hand, its production is simplified and, on the other hand, its efficiency is further improved.
  • the proportion of the area of the solar cell that is covered by contact elements and therefore cannot contribute to the light conversion should be significantly minimized.
  • the method according to the invention for producing a solar cell with an n-doped emitter layer, which has a lattice-like surface texture and is formed on a base material is to be carried out in such a way that, in a first method step, a highly doped n + + doping layer over the entire surface of a base material to be processed will be produced.
  • This n + + doping layer is preferably introduced into the upper region of the base material by diffusion of dopants.
  • a subsequent, selective etching process textures the n + + doping layer using an etching mask on its surface in such a way that a multiplicity of mutually intersecting, tapering ribs are formed, the upper sections of which the n + + -doped doping layer and the lower part of which consists of the base material (see FIG. 2).
  • the upper edges of the ribs are made of highly doped material, so that when viewed together, all crossing rib edges form a low-resistance grid on the top of the emitter layer, which covers the entire cell surface.
  • a particular advantage of this lattice-emitter structure according to the invention is that by placing a fine contact wire grid on the GE structure, for example, electrical contacting with the emitter of the solar cell is possible, the shading effects caused by the filigree design of the contact grid are reduced to a minimum.
  • the method according to the invention avoids the second, costly photomask step required in the conventional method, as a result of which the production costs can be considerably reduced.
  • the entire surface texture of the solar cell according to the invention can be doped with n + dopants.
  • a two-stage doped emitter is obtained which has areas of highest doping only below the edges of the ribs, while the depths of the ribs extend into the Doping decreases. This type of two-stage doping has a favorable influence on recombination in the emitter.
  • the geometrical design of the ribs can be influenced by the choice of the different geometries of the masks to be used during the etching process. Further details can be found in the following description of the figures.
  • the surface of a base material is doped with p + dopants. This is preferably done as part of diffusion doping.
  • the surface predoped in this way is then subsequently doped with n + + dopants.
  • the doping profile is to be selected such that the n-dopants penetrate less deeply into the base material than the p-dopants.
  • an etching mask is used to produce a desired surface texture in order to obtain a multiplicity of mutually crossing ribs that taper to the top.
  • the etching mask geometry is to be selected such that rib trains form higher in the outer surface area than inner rib trains surrounded by the outer ones, so that the upper sections of the higher rib trains are made of the n + -doped doping layer and the upper sections of the inner ribs consist of the p + -doped doping layer.
  • FIG. 1 shows a schematic, perspective illustration of a PERL solar cell
  • FIG. 2 shows schematic diagrams for comparing the production of the emitter of a PERL solar cell and a grid-emitter solar cell according to the invention
  • FIG. 2 shows a comparison of the emitter production using the PERL process known per se (left illustration) and according to the method according to the invention (right illustration).
  • the first step (uppermost Illustration on the left) first textured the surface of the base material using a suitable mask. Subsequently, likewise using a corresponding second mask, local diffusion is used to produce a highly doped n + + doping region En + + which extends deep into the base material and which later serves as a contact region to an external electrode contact. Finally, in a subsequent process step, the textured surface is n + -doped (En + ).
  • the base material is n ++ doped over the entire surface in a first step to produce the GE structure.
  • This is followed by an etching step using a suitable mask, in which the structuring shown in the middle illustration on the right side of FIG. 2 is generated. It is essential here that the etching depth between the individual ribs extends into the base material, so that highly doped n + + doping regions remain in each case under the pointed edges of each individual ribs. Whilst avoiding a second mask step according to the invention, doping over the entire surface can additionally be carried out, this time with n + dopants. In this way, a new type of emitter structure is obtained, in which the emitter area lies under the edges of the respective ribs.
  • the special feature of the GE structure is that the texturing is not only for the optical adaptation of the cell, but also for the structuring of the emitter and the Contacts can be used. This saves a time-consuming and costly photomask step compared to conventional structuring.
  • the GE structures according to the invention can be seen in a perspective representation without (see FIG. 3 a) and with (see FIG. 3 b) additional homogeneous n + doping.
  • an electrical contact G is applied to the top of the edges, so that an electrical contact that is as low as possible can be produced in this way.
  • the electrode G is preferably part of an electrode grid, as can be described in FIGS. 7 and 8, which only slightly shades the effective solar cell surface.
  • FIG. 4 shows doping profile options, the common feature of which is the production of a high dopant concentration in the region of the edges of the respective ribs, while the doping decreases in the depth of the edges.
  • This doping profile has a favorable influence on the recombination possibilities within the emitter.
  • the conductivity in the edge can be further improved by a double diffusion profile according to Figure 4 b.
  • the size and shape of the crossing ribs can be determined by the choice of suitable etching masks.
  • the mutual spacing of the individual inverse pyramids is determined by the width of the intermediate webs of the lattice-like mask, which is the same in every direction in the present case.
  • the mask example according to FIG. 5b likewise has square mesh fields, but the intermediate webs, which each intersect perpendicularly, are of different strengths. Because of the narrow design of the intermediate webs, which run horizontally, the shielding effects during the etching process are less, so that more material can be removed in the direction of the narrowly designed intermediate webs than in the orthogonal direction along the wider intermediate webs.
  • cross-sectional profiles are shown on the side of the mask grid, which represent the etching profile in the corresponding direction of the solar cell to be processed.
  • the mesh fields of the etching masks can also have a rectangular outline according to sub-figure 5c, if the emitter area and the emitter resistance should be larger in one direction than in the other. This creates larger trenches between individual ribs, which can be seen from the horizontal profile profile in sub-figure 5c. In this way, different conductivities can be formed in the vertical and horizontal direction within the emitter structure, which are determined by the ratio of the side lengths.
  • the GE diffusion profile In addition to influencing the width of the intermediate web of an etching mask on the height of the ribs that form, the GE diffusion profile must also be influenced. For example, using the mask according to FIG. 5b, a profile with a higher doping is created in the horizontal row than in the vertical row. The reason for this is the greater etching removal in the vertical row.
  • etching grating variants which are not intended to represent a conclusive list of possible mask geometries
  • a particular advantage of the GE structure according to the invention is the high doping at the upper regions of the ribbed lines which are formed, as a result of which an increased transverse conductivity is created, which not least leads to a reduction in the electrode contact surfaces which come into contact with the lattice structure leads.
  • grid fingers which represent individual electrical contact surfaces, can be used for contacting, as a result of which the shading losses are reduced and the technology can be considerably simplified.
  • the GE structure according to the invention is also suitable for the use of so-called screen-printed contact points.
  • the doping profiles in the ribs that form can be set in a targeted manner by deeper etching.
  • a highly doped “superlattice”, as has been described for production using FIG. 5d, can be produced in a lightly doped GE structure.
  • the base material is doped by double emitter diffusion, so that two doping profiles result, a highly doped region HD and a low-doped region LD.
  • the emitter structure according to FIG. 6b results after the etching process. It is important to note here that the upper part of the high ribs has areas of high doping, whereas the lower ribs have only areas of low doping at the upper edges.
  • an oxide layer 0 is preferably applied over the entire surface of the surface texture obtained (according to FIG. 6c) and is only removed locally at locations of the higher ribs until the edge area of the highly doped areas is exposed (see FIG. 6b).
  • galvanic contact elements are now applied at these points according to FIG. 6e, whereby a GE solar cell structure is created which can be optimized by very fine contacts for maximum efficiency.
  • An alternative embodiment of applying electrical contact points to the surface of the GE structure is, as already mentioned, the use of the finest wire grids according to FIG. 7.
  • the wire grid is preferably pressed onto the edges by pressing the wire under the influence of heat, ultrasound or a flux the ribs applied.
  • the advantage here is that the wire mesh, the dimensions of which are of the order of 20 ⁇ m wire diameter and 2000 ⁇ m mesh size, does not have to be adjusted to the GE structure, but, according to FIG. 8, can assume an arbitrary position relative to the rib pull orientation. This type of electrical contacting is therefore particularly suitable for automated production.
  • GE structures can also be applied analogously to the basic contact.
  • the base side of the solar cell opposite the emitter side is to be processed in the same way, only with a correspondingly reversed dopant concentration. ions.
  • the n-dopants have to be replaced by p-dopants.
  • GBSF back surface field grating
  • the entire rear side can then either be vapor-coated with aluminum over an oxide or have only a few electrical contact points such as the emitter side. In the latter case, a so-called bifacial solar cell is obtained, ie a solar cell that can be illuminated from both sides.
  • a solar cell can be processed with both a GE and a G-BSF structure.
  • FIG. 9 shows a further novel variant of a surface-textured solar cell which has both the emitter and the base contacts on a single surface.
  • This structure is obtained by doping the base material with p + dopants in a first step and then diffusing in an n + + doping layer.
  • a suitable etching mask to produce "superlattice emitter" see also FIG. 5d
  • a structure as shown in cross section in FIG. 9 can be processed so that the deeper-etched edges of the ribbed lines form the p + doping layer and the more highly etched ones which have n + + doping layer.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire et la cellule solaire proprement dite pourvue d'une couche émettrice dopée N avec une texture superficielle en forme de grille formée sur un matériau de base. L'invention se caractérise en ce que l'on recouvre d'abord toute la surface du matériau de base d'une couche de dopage N<++> par diffusion. On procède ensuite à une attaque sélective de la couche émettrice en utilisant un masque qui génère la texture superficielle. On obtient une pluralité de nervures entrecroisées qui se terminent en pointe dans leur partie supérieure; la zone supérieure des nervures est constituée par la couche dopée N<++> et la zone inférieure est constituée par le matériau de base.
EP96918588A 1995-06-21 1996-06-19 Cellule solaire a emetteur pourvu d'une texture superficielle et son procede de fabrication Withdrawn EP0834199A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19522539 1995-06-21
DE19522539A DE19522539C2 (de) 1995-06-21 1995-06-21 Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
PCT/DE1996/001082 WO1997001189A1 (fr) 1995-06-21 1996-06-19 Cellule solaire a emetteur pourvu d'une texture superficielle et son procede de fabrication

Publications (1)

Publication Number Publication Date
EP0834199A1 true EP0834199A1 (fr) 1998-04-08

Family

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Application Number Title Priority Date Filing Date
EP96918588A Withdrawn EP0834199A1 (fr) 1995-06-21 1996-06-19 Cellule solaire a emetteur pourvu d'une texture superficielle et son procede de fabrication

Country Status (6)

Country Link
US (1) US6147297A (fr)
EP (1) EP0834199A1 (fr)
JP (1) JPH11508088A (fr)
AU (1) AU716866B2 (fr)
DE (1) DE19522539C2 (fr)
WO (1) WO1997001189A1 (fr)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO638997A0 (en) * 1997-04-23 1997-05-22 Unisearch Limited Metal contact scheme using selective silicon growth
EP0996967B1 (fr) 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé pour produire des structures en couche sur un substrat à semiconducteur, substrat à semiconducteur et composants à semiconducteur produits à l'aide dudit procédé
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
US6313397B1 (en) 1998-08-31 2001-11-06 Sharp Kabushiki Kaisha Solar battery cell
RU2139601C1 (ru) * 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
TWI223012B (en) * 1999-05-28 2004-11-01 Shinetsu Handotai Kk CZ silicon single crystal and wafer doped with gallium and method for producing them
JP3732993B2 (ja) 2000-02-09 2006-01-11 シャープ株式会社 太陽電池セルおよびその製造方法
DE10040459A1 (de) * 2000-08-18 2002-03-21 Infineon Technologies Ag PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
JP4660642B2 (ja) * 2003-10-17 2011-03-30 信越化学工業株式会社 太陽電池及びその製造方法
DE10350643B4 (de) 2003-10-29 2008-12-04 Infineon Technologies Ag Verfahren zur Herstellung einer antireflektierenden Oberfläche auf optischen integrierten Schaltkreisen
DE102004012884B4 (de) 2004-03-16 2011-07-21 IXYS Semiconductor GmbH, 68623 Leistungs-Halbleiterbauelement in Planartechnik
DE102004034435B4 (de) * 2004-07-16 2007-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement mit einem auf mindestens einer Oberfläche angeordneten elektrischen Kontakt
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
DE102006031300A1 (de) * 2006-06-29 2008-01-03 Schmid Technology Systems Gmbh Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
WO2008031250A1 (fr) * 2006-08-14 2008-03-20 Jiangsu Sunshine Solar Electric Power Co., Ltd Cellule solaire de mémoire à puits quantiques
US20080048102A1 (en) * 2006-08-22 2008-02-28 Eastman Kodak Company Optically enhanced multi-spectral detector structure
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US8257998B2 (en) * 2007-02-15 2012-09-04 Massachusetts Institute Of Technology Solar cells with textured surfaces
EP2165371B1 (fr) * 2007-07-18 2012-02-29 Imec Procédé pour produire une structure d'émetteur et structures d'émetteur obtenues par ce procédé
US10453986B2 (en) * 2008-01-23 2019-10-22 Solvay Fluor Gmbh Process for the manufacture of solar cells
CN103400898B (zh) * 2008-03-27 2016-01-20 三菱电机株式会社 光电动势装置的制造方法
WO2009118861A1 (fr) * 2008-03-27 2009-10-01 三菱電機株式会社 Dispositif d’alimentation photovoltaïque et procédé de fabrication de celui-ci
WO2009133607A1 (fr) * 2008-04-30 2009-11-05 三菱電機株式会社 Dispositif photovoltaïque et son procédé de fabrication
TWI493605B (zh) * 2008-06-11 2015-07-21 Ind Tech Res Inst 背面電極層的製造方法
WO2009157052A1 (fr) * 2008-06-23 2009-12-30 三菱電機株式会社 Procédé de fabrication d’un système photovoltaïque
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US8030206B2 (en) * 2008-08-27 2011-10-04 The Boeing Company Coplanar solar cell metal contact annealing in plasma enhanced chemical vapor deposition
JP5344872B2 (ja) * 2008-08-27 2013-11-20 三菱電機株式会社 光起電力装置
WO2010028177A1 (fr) * 2008-09-03 2010-03-11 Sionyx, Inc. Photodétecteurs haute sensibilité, réseaux d'imagerie et dispositifs photovoltaïques à rendement élevé fabriqués à l'aide d'une implantation d'ions et d'une irradiation laser femtoseconde
KR100997669B1 (ko) * 2008-11-04 2010-12-02 엘지전자 주식회사 스크린 인쇄법을 이용한 실리콘 태양전지 및 그 제조방법
DE102008060599A1 (de) 2008-12-06 2010-06-10 Rainer Merdonig Solarzelleneinheit
US8338220B2 (en) * 2009-02-06 2012-12-25 Applied Materials, Inc. Negatively charged passivation layer in a photovoltaic cell
EP2356695B1 (fr) 2009-03-03 2018-11-21 LG Electronics Inc. Cellule solaire
KR101192345B1 (ko) 2009-06-09 2012-10-18 엘지전자 주식회사 태양전지의 전극 패턴 및 이를 포함하는 태양전지
KR101092469B1 (ko) 2009-03-03 2011-12-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8652869B2 (en) 2009-03-25 2014-02-18 Mitsubishi Electric Corporation Method for roughening substrate surface and method for manufacturing photovoltaic device
CN102428565A (zh) * 2009-03-26 2012-04-25 Bp北美公司 用于在热扩散掺杂区域中带有激光烧结接触的太阳能电池的设备和方法
US8207051B2 (en) 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
DE102009021971A1 (de) * 2009-05-19 2010-11-25 Ersol Solar Energy Ag Verfahren zur Herstellung einer Solarzelle und Solarzelle
DE102009029944A1 (de) 2009-06-19 2010-12-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zu deren Herstellung
US20110048505A1 (en) * 2009-08-27 2011-03-03 Gabriela Bunea Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve
JP5961332B2 (ja) 2009-09-17 2016-08-02 サイオニクス、エルエルシー 感光撮像素子および関連方法
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
EP2478562A4 (fr) * 2009-09-20 2014-10-22 Intermolecular Inc Procédés de formation de cellules solaires en silicium cristallin pour une utilisation dans un tamisage combinatoire
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114152A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114147A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
WO2011061694A2 (fr) * 2009-11-18 2011-05-26 Solar Wind Ltd. Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci
US8796060B2 (en) * 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
JP2011142210A (ja) * 2010-01-07 2011-07-21 Sharp Corp 太陽電池およびその製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
KR101626162B1 (ko) * 2010-04-26 2016-05-31 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9991407B1 (en) * 2010-06-22 2018-06-05 Banpil Photonics Inc. Process for creating high efficiency photovoltaic cells
JP2012009578A (ja) * 2010-06-24 2012-01-12 Sharp Corp 太陽電池
US8377738B2 (en) 2010-07-01 2013-02-19 Sunpower Corporation Fabrication of solar cells with counter doping prevention
US8664100B2 (en) * 2010-07-07 2014-03-04 Varian Semiconductor Equipment Associates, Inc. Manufacturing high efficiency solar cell with directional doping
DE102011108070B4 (de) * 2010-07-20 2019-05-29 Lg Electronics Inc. Verfahren zur Herstellung einer Solarzelle
DE102010044271A1 (de) 2010-09-02 2012-03-08 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
TWI431797B (zh) 2010-10-19 2014-03-21 Ind Tech Res Inst 選擇性射極之太陽能電池及其製作方法
CN105679862A (zh) 2010-12-21 2016-06-15 西奥尼克斯公司 具有减少的衬底损伤的半导体器件和相关方法
CN102593204B (zh) * 2011-01-10 2014-09-24 Lg电子株式会社 太阳能电池和制造该太阳能电池的方法
KR101180813B1 (ko) * 2011-01-18 2012-09-07 엘지전자 주식회사 태양 전지
WO2012117558A1 (fr) 2011-03-03 2012-09-07 三菱電機株式会社 Dispositif photovoltaïque, procédé de fabrication correspondant et module photovoltaïque
CN106158895B9 (zh) 2011-03-10 2019-12-20 西奥尼克斯公司 三维传感器、系统和相关的方法
JP5496136B2 (ja) * 2011-03-25 2014-05-21 三菱電機株式会社 光起電力装置および光起電力モジュール
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
TWI453927B (zh) 2011-06-29 2014-09-21 Ind Tech Res Inst 多重反射結構以及光電元件
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
KR101860919B1 (ko) 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR101387718B1 (ko) 2012-05-07 2014-04-22 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN102779898A (zh) * 2012-06-27 2012-11-14 友达光电股份有限公司 制作太能阳电池的方法
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US8796061B2 (en) 2012-12-21 2014-08-05 Sunpower Corporation Module assembly for thin solar cells
WO2014127376A2 (fr) 2013-02-15 2014-08-21 Sionyx, Inc. Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés
US8916038B2 (en) * 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (fr) 2013-06-29 2014-12-31 Sionyx, Inc. Régions texturées formées de tranchées peu profondes et procédés associés.
US9685571B2 (en) 2013-08-14 2017-06-20 Sunpower Corporation Solar cell module with high electric susceptibility layer
WO2015027269A1 (fr) * 2013-09-02 2015-03-05 The Australian National University Dispositif photovoltaïque à structure émettrice sélective et son procédé de fabrication
JP6394618B2 (ja) * 2016-01-26 2018-09-26 三菱電機株式会社 太陽電池および太陽電池の製造方法
CN112466967B (zh) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 一种选择性发射极太阳能电池及其制备方法
CN115911147B (zh) * 2022-11-16 2024-08-30 宁夏隆基乐叶科技有限公司 选择性发射极及其制备方法、太阳能电池和太阳能组件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
JPS5165774U (fr) * 1974-11-20 1976-05-24
US3985579A (en) * 1975-11-26 1976-10-12 The United States Of America As Represented By The Secretary Of The Air Force Rib and channel vertical multijunction solar cell
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4343962A (en) * 1979-07-16 1982-08-10 Arnost Neugroschel Oxide charge induced high low junction emitter solar cell
US4314231A (en) * 1980-04-21 1982-02-02 Raychem Corporation Conductive polymer electrical devices
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4367368A (en) * 1981-05-15 1983-01-04 University Patents Inc. Solar cell
US4665277A (en) * 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
JP2732524B2 (ja) * 1987-07-08 1998-03-30 株式会社日立製作所 光電変換デバイス
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5215599A (en) * 1991-05-03 1993-06-01 Electric Power Research Institute Advanced solar cell
DE59310390D1 (de) * 1992-03-20 2006-10-12 Shell Solar Gmbh Herstellungsverfahren einer Solarzelle mit kombinierter Metallisierung
US5431741A (en) * 1992-12-11 1995-07-11 Shin-Etsu Chemical Co., Ltd. Silicon solar cell
DE4310206C2 (de) * 1993-03-29 1995-03-09 Siemens Ag Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe
JP3398385B2 (ja) * 1993-07-29 2003-04-21 ヴィレケ・ゲルハルト 太陽電池の製作方法およびこの方法によって製作された太陽電池
JP3202536B2 (ja) * 1994-07-19 2001-08-27 シャープ株式会社 バイパス機能付太陽電池セル
EP0729189A1 (fr) * 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Méthode de fabrication de cellules solaires et produits ainsi obtenus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9701189A1 *

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WO1997001189A1 (fr) 1997-01-09
AU716866B2 (en) 2000-03-09
AU6120896A (en) 1997-01-22
US6147297A (en) 2000-11-14
DE19522539C2 (de) 1997-06-12
JPH11508088A (ja) 1999-07-13

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