EP0836536A4 - Herstellung am ort von ultrahochreinem gepuffertem wasserstofffluorid für halbleiterbehandlung - Google Patents

Herstellung am ort von ultrahochreinem gepuffertem wasserstofffluorid für halbleiterbehandlung

Info

Publication number
EP0836536A4
EP0836536A4 EP96922477A EP96922477A EP0836536A4 EP 0836536 A4 EP0836536 A4 EP 0836536A4 EP 96922477 A EP96922477 A EP 96922477A EP 96922477 A EP96922477 A EP 96922477A EP 0836536 A4 EP0836536 A4 EP 0836536A4
Authority
EP
European Patent Office
Prior art keywords
ultrapur
semiconductors
treatment
hydrogen peroxide
situ production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96922477A
Other languages
English (en)
French (fr)
Other versions
EP0836536A1 (de
Inventor
Joe G Hoffman
R Scot Clark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide America Corp
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26789686&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP0836536(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from PCT/US1995/007649 external-priority patent/WO1996039358A1/en
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Publication of EP0836536A1 publication Critical patent/EP0836536A1/de
Publication of EP0836536A4 publication Critical patent/EP0836536A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01CAMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00Ammonia; Compounds thereof
    • C01C1/02Preparation, purification or separation of ammonia
    • C01C1/024Purification
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D1/00Evaporating
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • C01B7/191Hydrogen fluoride
    • C01B7/195Separation; Purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • C01B7/191Hydrogen fluoride
    • C01B7/195Separation; Purification
    • C01B7/197Separation; Purification by adsorption
    • C01B7/198Separation; Purification by adsorption by solid ion-exchangers
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01CAMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00Ammonia; Compounds thereof
    • C01C1/16Halides of ammonium
    • C01C1/162Ammonium fluoride
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
EP96922477A 1995-06-05 1996-06-05 Herstellung am ort von ultrahochreinem gepuffertem wasserstofffluorid für halbleiterbehandlung Withdrawn EP0836536A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/US1995/007649 WO1996039358A1 (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component manufacture
WOPCT/US95/07649 1995-06-06
US49942795A 1995-07-07 1995-07-07
US499427 1995-07-07
PCT/US1996/010388 WO1996039266A1 (en) 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered-hf for semiconductor processing

Publications (2)

Publication Number Publication Date
EP0836536A1 EP0836536A1 (de) 1998-04-22
EP0836536A4 true EP0836536A4 (de) 1999-12-15

Family

ID=26789686

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96922477A Withdrawn EP0836536A4 (de) 1995-06-05 1996-06-05 Herstellung am ort von ultrahochreinem gepuffertem wasserstofffluorid für halbleiterbehandlung

Country Status (5)

Country Link
EP (1) EP0836536A4 (de)
JP (1) JP2001527697A (de)
KR (1) KR100379886B1 (de)
AU (1) AU6333896A (de)
WO (1) WO1996039266A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7871249B2 (en) 1998-04-16 2011-01-18 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids using a liquid ring pump
US7980753B2 (en) 1998-04-16 2011-07-19 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system
US6799883B1 (en) 1999-12-20 2004-10-05 Air Liquide America L.P. Method for continuously blending chemical solutions
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
DE19837041A1 (de) * 1998-08-14 2000-02-24 Messer Griesheim Gmbh Erzeugung von gebrauchsfertigen Lösungen
DE19905798A1 (de) 1999-02-12 2000-08-17 Bayer Ag Verfahren zum Herstellen reiner Flußsäure
DE10115345A1 (de) 2001-03-28 2002-10-02 Merck Patent Gmbh Verfahren zur Aufreinigung von korrosiv wirkenden Gasen
FR2834045B1 (fr) * 2001-12-20 2004-05-28 Air Liquide Electronics Sys Procede et systeme de production d'une solution de produit chimique a partir de la phase gazeuse d'un produit chimique
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
US20160296902A1 (en) 2016-06-17 2016-10-13 Air Liquide Electronics U.S. Lp Deterministic feedback blender
CN108609585A (zh) * 2018-08-08 2018-10-02 宣城亨泰电子化学材料有限公司 一种氢氟酸除砷工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
US5164049A (en) * 1986-10-06 1992-11-17 Athens Corporation Method for making ultrapure sulfuric acid
US4756899A (en) * 1987-02-12 1988-07-12 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4952386A (en) * 1988-05-20 1990-08-28 Athens Corporation Method and apparatus for purifying hydrogen fluoride
US4980032A (en) * 1988-08-12 1990-12-25 Alameda Instruments, Inc. Distillation method and apparatus for reprocessing sulfuric acid
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
JPH05121390A (ja) * 1991-10-29 1993-05-18 Koujiyundo Silicon Kk 酸の除去方法
DE4135918A1 (de) * 1991-10-31 1993-05-06 Solvay Fluor Und Derivate Gmbh, 3000 Hannover, De Herstellung von hochreinem fluorwasserstoff
US5500098A (en) * 1993-08-05 1996-03-19 Eco-Tec Limited Process for regeneration of volatile acids
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *

Also Published As

Publication number Publication date
AU6333896A (en) 1996-12-24
EP0836536A1 (de) 1998-04-22
JP2001527697A (ja) 2001-12-25
WO1996039266A1 (en) 1996-12-12
KR100379886B1 (ko) 2003-06-19
KR19990022227A (ko) 1999-03-25

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