EP0881676A3 - Empaquetage de type flip-chip pour puces à mémoire - Google Patents

Empaquetage de type flip-chip pour puces à mémoire Download PDF

Info

Publication number
EP0881676A3
EP0881676A3 EP98303943A EP98303943A EP0881676A3 EP 0881676 A3 EP0881676 A3 EP 0881676A3 EP 98303943 A EP98303943 A EP 98303943A EP 98303943 A EP98303943 A EP 98303943A EP 0881676 A3 EP0881676 A3 EP 0881676A3
Authority
EP
European Patent Office
Prior art keywords
flip chip
memory chips
chip packaging
solder
high tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98303943A
Other languages
German (de)
English (en)
Other versions
EP0881676A2 (fr
EP0881676B1 (fr
Inventor
Yinon Degani
King Lien Tai
Thomas Dixon Dudderar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of EP0881676A2 publication Critical patent/EP0881676A2/fr
Publication of EP0881676A3 publication Critical patent/EP0881676A3/fr
Application granted granted Critical
Publication of EP0881676B1 publication Critical patent/EP0881676B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

Landscapes

  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
EP98303943.9A 1997-05-30 1998-05-19 Empaquetage de type flip-chip pour puces à mémoire Expired - Lifetime EP0881676B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/866,264 US5990564A (en) 1997-05-30 1997-05-30 Flip chip packaging of memory chips
US866264 1997-05-30

Publications (3)

Publication Number Publication Date
EP0881676A2 EP0881676A2 (fr) 1998-12-02
EP0881676A3 true EP0881676A3 (fr) 2005-11-09
EP0881676B1 EP0881676B1 (fr) 2016-01-20

Family

ID=25347254

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98303943.9A Expired - Lifetime EP0881676B1 (fr) 1997-05-30 1998-05-19 Empaquetage de type flip-chip pour puces à mémoire

Country Status (4)

Country Link
US (1) US5990564A (fr)
EP (1) EP0881676B1 (fr)
JP (1) JP3232042B2 (fr)
KR (1) KR100295034B1 (fr)

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US6392296B1 (en) 1998-08-31 2002-05-21 Micron Technology, Inc. Silicon interposer with optical connections
US5965945A (en) * 1998-11-12 1999-10-12 Advanced Micro Devices, Inc. Graded PB for C4 pump technology
US6255852B1 (en) 1999-02-09 2001-07-03 Micron Technology, Inc. Current mode signal interconnects and CMOS amplifier
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US6570251B1 (en) * 1999-09-02 2003-05-27 Micron Technology, Inc. Under bump metalization pad and solder bump connections
WO2001047013A1 (fr) * 1999-12-21 2001-06-28 Advanced Micro Devices, Inc. Boitiers organiques a soudures permettant des connexions fiables de puces a bosses
JP2002076589A (ja) * 2000-08-31 2002-03-15 Hitachi Ltd 電子装置及びその製造方法
JP3558595B2 (ja) * 2000-12-22 2004-08-25 松下電器産業株式会社 半導体チップ，半導体チップ群及びマルチチップモジュール
JP2002359358A (ja) * 2001-03-26 2002-12-13 Seiko Epson Corp 強誘電体メモリ及び電子機器
US6707684B1 (en) * 2001-04-02 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for direct connection between two integrated circuits via a connector
US20040174954A1 (en) * 2001-06-28 2004-09-09 Rust Johan Willem Medical x-ray device and power module therefor
US6877071B2 (en) 2001-08-20 2005-04-05 Technology Ip Holdings, Inc. Multi-ported memory
US7101770B2 (en) 2002-01-30 2006-09-05 Micron Technology, Inc. Capacitive techniques to reduce noise in high speed interconnections
JP2003249743A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 配線基板及びその製造方法、半導体装置並びに電子機器
US7235457B2 (en) 2002-03-13 2007-06-26 Micron Technology, Inc. High permeability layered films to reduce noise in high speed interconnects
US7344970B2 (en) 2002-04-11 2008-03-18 Shipley Company, L.L.C. Plating method
AU2003272790A1 (en) * 2002-10-08 2004-05-04 Honeywell International Inc. Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials
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US6828514B2 (en) * 2003-01-30 2004-12-07 Endicott Interconnect Technologies, Inc. High speed circuit board and method for fabrication
DE10308275A1 (de) * 2003-02-26 2004-09-16 Advanced Micro Devices, Inc., Sunnyvale Strahlungsresistentes Halbleiterbauteil
US6911730B1 (en) * 2003-03-03 2005-06-28 Xilinx, Inc. Multi-chip module including embedded transistors within the substrate
JP4758614B2 (ja) * 2003-04-07 2011-08-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電気めっき組成物および方法
US8060207B2 (en) 2003-12-22 2011-11-15 Boston Scientific Scimed, Inc. Method of intravascularly delivering stimulation leads into direct contact with tissue
JP4543755B2 (ja) * 2004-05-31 2010-09-15 パナソニック株式会社 半導体集積回路
US7238547B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Packaging integrated circuits for accelerated detection of transient particle induced soft error rates
US20070166875A1 (en) * 2005-12-29 2007-07-19 Intel Corporation Method of forming a microelectronic package and microelectronic package formed according to the method
US8110899B2 (en) * 2006-12-20 2012-02-07 Intel Corporation Method for incorporating existing silicon die into 3D integrated stack
US7539034B2 (en) * 2007-02-01 2009-05-26 Qimonda North America Corp. Memory configured on a common substrate
JP5260094B2 (ja) 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
JP5753681B2 (ja) 2009-12-15 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストおよびその使用方法
CN102184851B (zh) 2009-12-15 2015-07-15 罗门哈斯电子材料有限公司 光致抗蚀剂及其使用方法
EP2336829B1 (fr) 2009-12-15 2019-01-23 Rohm and Haas Electronic Materials LLC Photoréserves et leurs procédés d'utilisations
EP2472327A1 (fr) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photorésines et leurs procédés d'utilisation
US8674503B2 (en) * 2011-10-05 2014-03-18 Himax Technologies Limited Circuit board, fabricating method thereof and package structure
US10109609B2 (en) 2014-01-13 2018-10-23 Infineon Technologies Austria Ag Connection structure and electronic component
JP2020155596A (ja) 2019-03-20 2020-09-24 キオクシア株式会社 半導体装置
US11152378B1 (en) 2020-03-25 2021-10-19 International Business Machines Corporation Reducing error rates with alpha particle protection
US20250028596A1 (en) * 2023-07-17 2025-01-23 Honeywell International Inc. EEPROM Correction Method

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US4871914A (en) * 1987-05-05 1989-10-03 Sun Nuclear Corporation Low-cost radon detector
EP0389195A2 (fr) * 1989-03-18 1990-09-26 Hitachi, Ltd. Procédé pour former un film structuré de polyimide et dispositifs utilisant ledit film
EP0547989A2 (fr) * 1991-12-17 1993-06-23 International Business Machines Corporation Technique pour la réduction des dérangements générés par particules alpha
US5615477A (en) * 1994-09-06 1997-04-01 Sheldahl, Inc. Method for interconnecting a flip chip to a printed circuit substrate

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US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
US4871914A (en) * 1987-05-05 1989-10-03 Sun Nuclear Corporation Low-cost radon detector
EP0389195A2 (fr) * 1989-03-18 1990-09-26 Hitachi, Ltd. Procédé pour former un film structuré de polyimide et dispositifs utilisant ledit film
EP0547989A2 (fr) * 1991-12-17 1993-06-23 International Business Machines Corporation Technique pour la réduction des dérangements générés par particules alpha
US5615477A (en) * 1994-09-06 1997-04-01 Sheldahl, Inc. Method for interconnecting a flip chip to a printed circuit substrate

Also Published As

Publication number Publication date
JPH1116940A (ja) 1999-01-22
JP3232042B2 (ja) 2001-11-26
KR100295034B1 (ko) 2002-09-25
US5990564A (en) 1999-11-23
EP0881676A2 (fr) 1998-12-02
EP0881676B1 (fr) 2016-01-20
KR19980087391A (ko) 1998-12-05

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