EP0898303A3 - Système de couche mince isolante à conduction résiduelle définie - Google Patents

Système de couche mince isolante à conduction résiduelle définie Download PDF

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Publication number
EP0898303A3
EP0898303A3 EP98115855A EP98115855A EP0898303A3 EP 0898303 A3 EP0898303 A3 EP 0898303A3 EP 98115855 A EP98115855 A EP 98115855A EP 98115855 A EP98115855 A EP 98115855A EP 0898303 A3 EP0898303 A3 EP 0898303A3
Authority
EP
European Patent Office
Prior art keywords
film system
thin film
electric isolating
defined residual
isolating thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98115855A
Other languages
German (de)
English (en)
Other versions
EP0898303A2 (fr
Inventor
Andreas Dr. Weber
Thomas Höing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Publication of EP0898303A2 publication Critical patent/EP0898303A2/fr
Publication of EP0898303A3 publication Critical patent/EP0898303A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/281—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
EP98115855A 1997-08-22 1998-08-21 Système de couche mince isolante à conduction résiduelle définie Withdrawn EP0898303A3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19736664 1997-08-22
DE19736664 1997-08-22
DE19740189 1997-09-12
DE19740189 1997-09-12

Publications (2)

Publication Number Publication Date
EP0898303A2 EP0898303A2 (fr) 1999-02-24
EP0898303A3 true EP0898303A3 (fr) 1999-04-07

Family

ID=26039396

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98115855A Withdrawn EP0898303A3 (fr) 1997-08-22 1998-08-21 Système de couche mince isolante à conduction résiduelle définie

Country Status (2)

Country Link
EP (1) EP0898303A3 (fr)
DE (1) DE19838063A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0070509A2 (fr) * 1981-07-17 1983-01-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconducteur amorphe et dispositif photovoltaique en silicium amorphe
JPS5864070A (ja) * 1981-10-13 1983-04-16 Kanegafuchi Chem Ind Co Ltd フツ素を含むアモルフアスシリコン太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0070509A2 (fr) * 1981-07-17 1983-01-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconducteur amorphe et dispositif photovoltaique en silicium amorphe
JPS5864070A (ja) * 1981-10-13 1983-04-16 Kanegafuchi Chem Ind Co Ltd フツ素を含むアモルフアスシリコン太陽電池

Non-Patent Citations (13)

* Cited by examiner, † Cited by third party
Title
ASANO M ET AL: "High sensitive magneto-optical media with new types of protective film", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENT, INTERNATIONAL SYMPOSIUM ON OPTICAL MEMORY, KOBE, JAPAN, 26-28 SEPT. 1989, vol. 28, no. 28-3, 1989, Tokyo, JP, pages 353 - 357, XP002091728 *
BRINGMANN U ET AL: "Downstream mass spectrometry on a plasma of a silicon organic compound", IPAT 87. 6TH INTERNATIONAL CONFERENCE ON ION AND PLASMA ASSISTED TECHNIQUES, May 1987 (1987-05-01), CEP Consultants, Edinburgh, UK, pages 123 - 127, XP002091722 *
BULLOT J ET AL: "Physics of amorphous silicon-carbon alloys", PHYSICA STATUS SOLIDI B, vol. 143, no. 2, 1 October 1987 (1987-10-01), Berlin, DD, pages 345 - 418, XP002091729 *
GAZICKI M ET AL: "DEPOSITION AND PROPERTIES OF GERMANIUM-CARBON ALLOY FILMS PRODUCED FROM TETRAETHYLGERMANIUM IN AN R.F. DISCHARGE", THIN SOLID FILMS, vol. 187, no. 1, 15 May 1990 (1990-05-15), Lausanne, CH, pages 51 - 63, XP000132929 *
GERSTENBERG K W ET AL: "Gas evolution studies for structural characterization of hexamethyldisilazane-based a-Si:C:N:H films", JOURNAL OF APPLIED PHYSICS, vol. 62, no. 5, September 1987 (1987-09-01), Woodbury, US, pages 1782 - 1787, XP002091724 *
GERSTENBERG K: "Structure and properties of a-Si:C:N:H films deposited in a plasma activated CVD process from hexamethyldisilazane", IPAT 87. 6TH INTERNATIONAL CONFERENCE ON ION AND PLASMA ASSISTED TECHNIQUES, May 1987 (1987-05-01), CEP Consultants, Edinburgh, UK, pages 122, XP002091727 *
LEVY R A ET AL: "Plasma enhanced chemical vapor deposition of Si-N-C-H films from environmentally benign organosilanes", MATERIALS LETTERS, vol. 24, no. 1-3, June 1995 (1995-06-01), Amsterdam, NL, pages 47 - 52, XP004067086 *
MAURY F ET AL: "PYROLYSIS OF VARIOUS ORGANOSILAZANES USED AS SINGLE PRECURSOR OF SINxCy:H FILMS OMCVD PROCESS", JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS, vol. 17, no. 1, 1989, Amsterdam, NL, pages 67 - 81, XP002091725 *
NAKAAKI I ET AL: "ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF A-SINGE: H FILMS PREPARED BY THE R.F. GLOW-DISCHARGED DECOMPOSITION", THIN SOLID FILMS, vol. 281/282, no. 1/02, 1 August 1996 (1996-08-01), Lausanne, CH, pages 308 - 310, XP000643413 *
NAKAAKI I ET AL: "Enhancement of photoconductivity in r.f. glow-discharge-deposited a-SiC:H films doped with nitrogen", PHILOSOPHICAL MAGAZINE B (PHYSICS OF CONDENSED MATTER, ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES), vol. 68, no. 1, July 1993 (1993-07-01), London, GB, pages 55 - 65, XP002091723 *
PATENT ABSTRACTS OF JAPAN vol. 007, no. 154 (E - 185) 6 July 1983 (1983-07-06) *
YASUI K ET AL: "THE INFLUENCE OF CARBON ADDITION ON THE INTERNAL STRESS AND CHEMICAL INERTNESS OF AMORPHOUS SILICON-NITRIDE FILMS", JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 111, no. 2/03, 1 November 1989 (1989-11-01), pages 173 - 177, XP000117019 *
ZHANG W ET AL: "SiCxNy:H FILMS PRODUCED FROM R.F. DISCHARGE OF THE SiH4-CH4-NH3 SYSTEM", SURFACE COATINGS & TECHNOLOGY, vol. 50, 1991, Lausanne, CH, pages 11 - 15, XP002091726 *

Also Published As

Publication number Publication date
EP0898303A2 (fr) 1999-02-24
DE19838063A1 (de) 1999-04-15

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