EP0903013A2 - Commutateur a transistors bidirectionnel integre pour tensions de signal eleve - Google Patents

Commutateur a transistors bidirectionnel integre pour tensions de signal eleve

Info

Publication number
EP0903013A2
EP0903013A2 EP98902151A EP98902151A EP0903013A2 EP 0903013 A2 EP0903013 A2 EP 0903013A2 EP 98902151 A EP98902151 A EP 98902151A EP 98902151 A EP98902151 A EP 98902151A EP 0903013 A2 EP0903013 A2 EP 0903013A2
Authority
EP
European Patent Office
Prior art keywords
transistor
signal
switching circuit
base
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98902151A
Other languages
German (de)
English (en)
Inventor
Jacobus Govert Sneep
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to EP98902151A priority Critical patent/EP0903013A2/fr
Publication of EP0903013A2 publication Critical patent/EP0903013A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages

Definitions

  • Such a switching circuit is known from European Patent Application EP 0 091 119.
  • Such switching circuits serve to short-circuit the signal voltage on the signal terminal to the reference terminal.
  • a coupling capacitor connects the signal terminal to a signal source, as a result of which an a.c. signal appears on the signal terminal.
  • This a.c. signal is short-circuited to the reference terminal under command of the control signal in the closed state of the switching circuit.
  • the switching circuit functions as a mute switch under control of a mute signal.
  • the switching circuit operates as a clamp switch in response to a clamp signal.
  • two transistors of the same conductivity type are arranged in series between the signal terminal and the reference terminal.
  • a first embodiment of the switching circuit is characterized in that the means for coupling comprise the second transistor.
  • the first and the second transistor are cut off.
  • the second transistor can be used to short-circuit the node to the reference terminal during negative signal excursions on the signal terminal.
  • an embodiment of the switching circuit is characterized in that the switching circuit comprises: a comparator having inputs for receiving the signal voltage and the threshold value, and having an out[ut for supplying an activation signal; a bias current source; and means for coupling the bias current source to the base of the second transistor in response to the activation signal.
  • the node between the collectors of the first and the second transistor will follow the instantaneous value of the signal voltage in the case of a positive signal excursion on the signal terminal and will increase in a positive sense to the positive peak value of the signal excursion minus two diode voltages, i.e. those of the base-emitter junction of the third transistor and the base-collector junction of the first transistor.
  • the switching circuit further comprises a signal follower having an input for receiving the signal voltage on the signal terminal and having an output coupled to the node.
  • the thyristor When the switching circuit is in the open state, i.e. when the transistors Tl and T2 are cut off, the thyristor will be turned on in the case of a negative-going signal U and will spontaneously cause an undesired short-circuit between the signal terminal ST and the substrate. However, this is prevented by short-circuiting the node N to the reference terminal RT, which is connected to the substrate. A consequence of this short-circuit is that a collector current of the transistor Tl cannot flow into the base of the parasitic transistor TP and thus cannot increase as a result of the loop gain. The thyristor is not ignited, as a result of which very large negative signal voltages can appear on the signal terminal ST.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

Un commutateur à transistor bidirectionnel destiné à des tensions de signal élevé comprend un premier transistor (T1) et un second transistor (T2) agencés en série, lesquels reçoivent un courant de base sous la commande d'un signal de commande afin de court-circuiter une borne de signal (ST) sur une borne de référence (RT) connectée au substrat du circuit. Lorsque le commutateur à transistor est ouvert, des excursions en tension négative élevées du signal (U) sur la borne de signal (ST) amorcent un thyristor formé par le premier transistor (T1) et un transistor parasite (TP), et par conséquent provoquent un court-circuit indésirable entre la borne de signal et la borne de référence (RT). Cela est empêché du fait que dans ces conditions, le noeud (N) entre les deux transistors est court-circuité à la borne de référence (RT), de manière que le gain de boucle de réaction dans le thyristor devient si petit que ce thyristor n'est plus excité. Le noeud (N) est court-circuité avec le second transistor (T2) ou un transistor MOS séparé, lequel est commandé par un comparateur (A1) qui compare le signal (U) avec une valeur de seuil (UR1).
EP98902151A 1997-03-04 1998-02-23 Commutateur a transistors bidirectionnel integre pour tensions de signal eleve Withdrawn EP0903013A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98902151A EP0903013A2 (fr) 1997-03-04 1998-02-23 Commutateur a transistors bidirectionnel integre pour tensions de signal eleve

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP97200637 1997-03-04
EP97200637 1997-03-04
EP98902151A EP0903013A2 (fr) 1997-03-04 1998-02-23 Commutateur a transistors bidirectionnel integre pour tensions de signal eleve
PCT/IB1998/000222 WO1998039841A2 (fr) 1997-03-04 1998-02-23 Commutateur a transistors bidirectionnel integre pour tensions de signal eleve

Publications (1)

Publication Number Publication Date
EP0903013A2 true EP0903013A2 (fr) 1999-03-24

Family

ID=26146208

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98902151A Withdrawn EP0903013A2 (fr) 1997-03-04 1998-02-23 Commutateur a transistors bidirectionnel integre pour tensions de signal eleve

Country Status (3)

Country Link
EP (1) EP0903013A2 (fr)
KR (1) KR20000065196A (fr)
WO (1) WO1998039841A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3104015C2 (de) * 1981-02-05 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Überstromschutzanordnung für einen Halbleiterschalter
US4771357A (en) * 1986-07-23 1988-09-13 Motorola, Inc. Power driver having short circuit protection
DE69409955T2 (de) * 1994-08-31 1998-09-03 St Microelectronics Srl Schutzschaltung gegen Überströme für elektronische Leistungsvorrichtungen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9839841A2 *

Also Published As

Publication number Publication date
KR20000065196A (ko) 2000-11-06
WO1998039841A2 (fr) 1998-09-11
WO1998039841A3 (fr) 1998-12-03

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