EP0917717A4 - Sensoren und verfahren zu deren herstellung aus einem gemeinsamen wafer - Google Patents

Sensoren und verfahren zu deren herstellung aus einem gemeinsamen wafer

Info

Publication number
EP0917717A4
EP0917717A4 EP97931199A EP97931199A EP0917717A4 EP 0917717 A4 EP0917717 A4 EP 0917717A4 EP 97931199 A EP97931199 A EP 97931199A EP 97931199 A EP97931199 A EP 97931199A EP 0917717 A4 EP0917717 A4 EP 0917717A4
Authority
EP
European Patent Office
Prior art keywords
sensors
methods
making wafer
making
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97931199A
Other languages
English (en)
French (fr)
Other versions
EP0917717A1 (de
Inventor
Carol Zwick Rosen
Donald G Wickham
John Carter Jr
David Sorg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermometrics Inc
Original Assignee
Thermometrics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermometrics Inc filed Critical Thermometrics Inc
Publication of EP0917717A1 publication Critical patent/EP0917717A1/de
Publication of EP0917717A4 publication Critical patent/EP0917717A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
EP97931199A 1996-06-17 1997-06-17 Sensoren und verfahren zu deren herstellung aus einem gemeinsamen wafer Withdrawn EP0917717A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1997396P 1996-06-17 1996-06-17
US19973P 1996-06-17
PCT/US1997/010406 WO1997049104A1 (en) 1996-06-17 1997-06-17 Sensors and methods of making wafer sensors

Publications (2)

Publication Number Publication Date
EP0917717A1 EP0917717A1 (de) 1999-05-26
EP0917717A4 true EP0917717A4 (de) 2000-11-08

Family

ID=21796081

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97931199A Withdrawn EP0917717A4 (de) 1996-06-17 1997-06-17 Sensoren und verfahren zu deren herstellung aus einem gemeinsamen wafer

Country Status (2)

Country Link
EP (1) EP0917717A4 (de)
WO (1) WO1997049104A1 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891158A (en) * 1984-11-08 1990-01-02 Matsushita Electric Industrial Co., Ltd. Oxide semiconductor for thermistor and manufacturing method thereof
JPH0788836A (ja) * 1993-09-27 1995-04-04 Komatsu Electron Metals Co Ltd 半導体単結晶インゴットの切断方法
EP0723276A2 (de) * 1995-01-18 1996-07-24 Murata Manufacturing Co., Ltd. Halbleitende Keramik mit negativem Temperaturkoeffizienten und diese verwendendes keramisches Halbleiterbauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA742384A (en) * 1966-09-06 W.R. Grace And Co. Process for making thermistors
GB1002704A (en) * 1962-12-14 1965-08-25 Grace W R & Co Improvements in the production of thermistor devices
DE2100789A1 (de) * 1971-01-08 1972-07-20 Philips Patentverwaltung Thermistor und Verfahren zu seiner Herstellung
US4952902A (en) * 1987-03-17 1990-08-28 Tdk Corporation Thermistor materials and elements
US5653954A (en) * 1995-06-07 1997-08-05 Thermometrics, Inc. Nickel-manganese oxide single crystals

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891158A (en) * 1984-11-08 1990-01-02 Matsushita Electric Industrial Co., Ltd. Oxide semiconductor for thermistor and manufacturing method thereof
JPH0788836A (ja) * 1993-09-27 1995-04-04 Komatsu Electron Metals Co Ltd 半導体単結晶インゴットの切断方法
EP0723276A2 (de) * 1995-01-18 1996-07-24 Murata Manufacturing Co., Ltd. Halbleitende Keramik mit negativem Temperaturkoeffizienten und diese verwendendes keramisches Halbleiterbauelement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 07 31 August 1995 (1995-08-31) *
See also references of WO9749104A1 *

Also Published As

Publication number Publication date
WO1997049104A1 (en) 1997-12-24
EP0917717A1 (de) 1999-05-26

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