EP0929104A2 - Elektrolumineszente Vorrichtung und Herstellungsverfahren - Google Patents

Elektrolumineszente Vorrichtung und Herstellungsverfahren Download PDF

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Publication number
EP0929104A2
EP0929104A2 EP99100080A EP99100080A EP0929104A2 EP 0929104 A2 EP0929104 A2 EP 0929104A2 EP 99100080 A EP99100080 A EP 99100080A EP 99100080 A EP99100080 A EP 99100080A EP 0929104 A2 EP0929104 A2 EP 0929104A2
Authority
EP
European Patent Office
Prior art keywords
electroluminescence device
layer
hole
emission
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99100080A
Other languages
English (en)
French (fr)
Other versions
EP0929104A3 (de
EP0929104B1 (de
Inventor
Yasunori Kijima
Shinichiro Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP00298498A external-priority patent/JP3852509B2/ja
Priority claimed from JP00298598A external-priority patent/JP4210872B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP0929104A2 publication Critical patent/EP0929104A2/de
Publication of EP0929104A3 publication Critical patent/EP0929104A3/de
Application granted granted Critical
Publication of EP0929104B1 publication Critical patent/EP0929104B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Definitions

  • a transparent electrode, an organic layer (particularly, the organic hole transfer layer, the hole block layer and the organic electron transfer layer), and a metallic electrode are laminated in this order on an optically transparent substrate.
  • Fig. 20 is a schematic cross sectional view showing an important part of a blue emission element 21B in a sixth embodiment according to the second aspect of the invention.
  • BSB-BCN (having the formula (17)) was vapor deposited (vapor deposition rate: from 0.2 to 0.4 nm/sec) on the transparent electrode 5 as an electron transfer red emission material layer 32 at a thickness of 20 nm in the stripe pattern of 1.15 mm x 48.0 mm, which was an emission region of the ITO electrode 5, with changing to a mask 22c having 12 openings 23c having a stripe form having an area of 1.16 mm x 49 mm.
  • Alq 3 (8-hydorxy quinoline aluminum having the formula (18)) was vapor deposited at a thickness of 40 nm as an electron transfer layer or an electron transfer emission layer 2.
  • the specific constitution of the organic EL device 21 of this example is explained based on its production process.
  • DMC2 (having the formula (19)) and Alq 3 (8-hydorxy quinoline aluminum having the formula (18)) was vapor deposited (vapor deposition rate: from 0.2 to 0.4 nm/sec) in such a manner that the molar ratio of DCM2 was from 0.5 to 1% on the transparent electrode 5 as an electron transfer red emission material layer 32 at a thickness of 20 nm in the stripe pattern of 1.15 mm x 48.0 mm, which was an emission region of the ITO electrode 5, with changing to a mask 22c having 12 openings 23c having a stripe form having an area of 1.16 mm x 49 mm.
  • the organic EL device according to Example 3 of the invention is explained based on its production process.
  • Fig. 22 is a graph showing the spectral characteristics of the organic EL device according to Example 3 shown in Fig. 11.
  • the luminance was 1,400 cd/m 2 at a current density of 400 mA/cm 2 .
  • the current did substantially not flow until a voltage of about 5 V, which gradually began to flow exceeding 5 V, and it suddenly flew exceeding 6 V. This means that it can be driven with a low voltage, and its threshold value voltage characteristics are good.
  • the organic EL device according to Example 4 of the invention is explained based on its production process.
  • the hole transfer layer can serve as an emission layer due to sufficient electron-hole recombination in the hole transfer layer by providing the hole block layer 33 between the hole transfer emission layer 4a and/or 4b and the electron transfer layer 2, so as to obtain stable emission with high efficiency.
  • ⁇ -NPD ⁇ -naphtylphenyldiamine having the formula (13) functioning as a hole transfer layer or a hole transfer emission layer 4b was vapor deposited by a vacuum vapor deposition method under vacuum to a thickness of 50 nm at a vapor deposition rate of from 0.2 to 0.4 nm/sec.
  • the mask was changed to a mask 22c having an opening 23c having an area of 1 mm x 2 mm, which covered a half of the emission region of 2 mm x 2 mm, bathocuproine (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline having the formula (3)) was vapor deposited at a vapor deposition rate of from 0.2 to 0.4 nm/sec as a hole block layer 33 at a thickness of 20 nm.
  • the peak luminance converted to the direct current driven was 55,000 cd/m 2 at a current density of 5,500 mA/cm 2 , and a high luminance blue emission element having high performance sufficient to practical use could be produced.
  • the mask was changed to 22a having an opening 23a of an area of 2 mm x 2 mm, Alq 3 (8-hydorxy quinoline aluminum having the formula (18)) functioning as an electron transfer layer or an electron transfer emission layer was vapor deposited at a thickness of 40 nm.
  • LiF was vapor deposited at a thickness of about 0.5 nm, followed by further vapor depositing Al at a thickness of about 200 nm, to produce an organic electroluminescence device 21 emitting blue light and green light.
  • the maximum emission wavelength in the emission region containing bathocuproine functioning as a hole block layer was 460 nm, and the coordinates on the CIE chromaticity coordinates were (0.155, 0.11), which resulted in good blue emission. It was apparent from the shape of the emission spectrum that it was emission from ⁇ -NPD. From the emission parts in the absence of bathocuproine, emission from Alq 3 as the electron transfer emission material was obtained, from which good green emission having the maximum emission wavelength of 520 nm and CIE (0.33, 0.55) was obtained.
  • the device emitting blue light and green light thus produced was a device having a blue emission region having an emission region of 1 mm x 2 mm, which was emission from ⁇ -NPD, and a green emission region having an emission region of 1 mm x 2 mm, which was emission from Alq 3 , in the same emission region having an emission region of 2 mm x 2 mm.
  • bathocuproine (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline having the formula (3)) was vapor deposited on the transparent electrode 5 as a hole block layer 33 at a thickness of 20 nm at a vapor deposition rate of from 0.2 to 0.4 nm/sec.
  • the hole transfer layers and the electron transfer layers each comprise the common materials within each of the laminated bodies, in which the emission region is independently present in each of the hole transfer layer and the electron transfer layer, the laminated bodies for each of the colors of emission light can be easily produced with a simple process at a low cost.
  • the common layers By forming the common layers on the whole surface of an organic pixel region by using a mask with a large opening, the film formation property and the step coverage property become good, and a leakage current between the cathode and the anode can be reduced.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
EP99100080A 1998-01-09 1999-01-05 Elektrolumineszente Vorrichtung und Herstellungsverfahren Expired - Lifetime EP0929104B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP00298498A JP3852509B2 (ja) 1998-01-09 1998-01-09 電界発光素子及びその製造方法
JP298598 1998-01-09
JP298498 1998-01-09
JP00298598A JP4210872B2 (ja) 1998-01-09 1998-01-09 電界発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
EP0929104A2 true EP0929104A2 (de) 1999-07-14
EP0929104A3 EP0929104A3 (de) 2003-03-26
EP0929104B1 EP0929104B1 (de) 2009-08-05

Family

ID=26336471

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99100080A Expired - Lifetime EP0929104B1 (de) 1998-01-09 1999-01-05 Elektrolumineszente Vorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6633122B2 (de)
EP (1) EP0929104B1 (de)
KR (1) KR100689163B1 (de)
DE (1) DE69941200D1 (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1191821A1 (de) * 2000-09-25 2002-03-27 Konica Corporation Organisches Elektrolumineszenzelement und dafür verwendetes organisches Elektrolumineszenzmaterial
WO2002087288A1 (en) * 2001-04-20 2002-10-31 Elam-T Limited Green light emitting electroluminescent material
EP1205528A4 (de) * 2000-04-07 2004-10-27 Sony Corp Organisch lumineszierendes element und lumineszierender apparat dieses verwendend
US7052351B2 (en) * 2002-12-31 2006-05-30 Eastman Kodak Company Using hole- or electron-blocking layers in color OLEDS
EP1234338A4 (de) * 1999-11-26 2009-01-21 Univ Princeton Organische lichetmpfindliche optoelektronische anordnung mit einer exciton-blockierschicht
US7719014B2 (en) 2001-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
WO2011141109A1 (de) * 2010-05-11 2011-11-17 Merck Patent Gmbh Organische elektrolumineszenzvorrichtungen
EP3201961A1 (de) * 2014-09-30 2017-08-09 Novaled GmbH Aktive oled-anzeige, verfahren zum betrieb einer aktiven oled-anzeige und verbindung

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480722B (en) * 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
US6867539B1 (en) * 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
US6906458B2 (en) * 2000-08-11 2005-06-14 Seiko Epson Corporation Method for manufacturing organic EL device, organic EL device and electronic apparatus
KR100685914B1 (ko) * 2000-09-05 2007-02-23 엘지.필립스 엘시디 주식회사 멀티 도메인 액정표시소자 및 그 제조방법
US6739931B2 (en) * 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
TW594617B (en) * 2002-03-13 2004-06-21 Sanyo Electric Co Organic EL display panel and method for making the same
CN100557667C (zh) * 2004-04-22 2009-11-04 株式会社半导体能源研究所 发光装置及其驱动方法
GB0422391D0 (en) * 2004-10-08 2004-11-10 Cambridge Display Tech Ltd Light emitting device
JP4595565B2 (ja) * 2005-01-31 2010-12-08 株式会社デンソー 自発光表示装置
TWI361018B (en) * 2005-04-18 2012-03-21 Sony Corp Display device and a method of manufacturing the s
US8258690B2 (en) * 2005-10-11 2012-09-04 Kuraray Co., Ltd. High brightness inorganic electroluminescence device driven by direct current
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
US8476844B2 (en) * 2008-11-21 2013-07-02 B/E Aerospace, Inc. Light emitting diode (LED) lighting system providing precise color control
US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
US9929366B2 (en) * 2013-05-17 2018-03-27 Sumitomo Chemical Company, Limited Organic EL element, and organic EL element manufacturing method
TWI731616B (zh) * 2020-03-09 2021-06-21 財團法人紡織產業綜合研究所 電致發光線

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US5393614A (en) * 1992-04-03 1995-02-28 Pioneer Electronic Corporation Organic electroluminescence device
EP0647694B1 (de) * 1993-03-26 1999-09-15 Sumitomo Electric Industries, Ltd. Organische elektroluminineszente elementen
US5424560A (en) * 1994-05-31 1995-06-13 Motorola, Inc. Integrated multicolor organic led array
US5693428A (en) * 1995-02-06 1997-12-02 Sanyo Electric Co., Ltd. Organic electroluminescent device
US5837390A (en) * 1995-05-10 1998-11-17 Sony Corporation Metal complex, method for producing the same and optical device
JP3672125B2 (ja) * 1996-01-26 2005-07-13 ソニー株式会社 光学的素子の製造方法
DE69732548T2 (de) * 1996-07-09 2006-01-12 Sony Corp. Elektrolumineszierende Anordnung
JPH1079297A (ja) * 1996-07-09 1998-03-24 Sony Corp 電界発光素子
US5949188A (en) * 1996-12-18 1999-09-07 Hage Gmbh & Co. Kg Electroluminescent display device with continuous base electrode
JPH10183112A (ja) * 1996-12-27 1998-07-14 Sony Corp 電界発光素子

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2400554A1 (de) * 1999-11-26 2011-12-28 The Trustees Of Princeton University Organische lichtempfindliche optoelektronische Vorrichtung mit Exzitonblockierschicht
EP1234338A4 (de) * 1999-11-26 2009-01-21 Univ Princeton Organische lichetmpfindliche optoelektronische anordnung mit einer exciton-blockierschicht
EP1205528A4 (de) * 2000-04-07 2004-10-27 Sony Corp Organisch lumineszierendes element und lumineszierender apparat dieses verwendend
US7255935B2 (en) 2000-04-07 2007-08-14 Sony Corporation Organic electroluminescent element and luminescent apparatus employing the same
US6723455B2 (en) 2000-09-25 2004-04-20 Konica Corporation Organic electro-luminescent element and material of organic electro-luminescent element
EP1191821A1 (de) * 2000-09-25 2002-03-27 Konica Corporation Organisches Elektrolumineszenzelement und dafür verwendetes organisches Elektrolumineszenzmaterial
WO2002087288A1 (en) * 2001-04-20 2002-10-31 Elam-T Limited Green light emitting electroluminescent material
US9048203B2 (en) 2001-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7982206B2 (en) 2001-12-28 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7719014B2 (en) 2001-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US9450030B2 (en) 2001-12-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Active matrix light-emitting device with overlapping electroluminescent layers
US10497755B2 (en) 2001-12-28 2019-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7052351B2 (en) * 2002-12-31 2006-05-30 Eastman Kodak Company Using hole- or electron-blocking layers in color OLEDS
WO2011141109A1 (de) * 2010-05-11 2011-11-17 Merck Patent Gmbh Organische elektrolumineszenzvorrichtungen
CN102884649A (zh) * 2010-05-11 2013-01-16 默克专利有限公司 有机电致发光器件
EP3201961A1 (de) * 2014-09-30 2017-08-09 Novaled GmbH Aktive oled-anzeige, verfahren zum betrieb einer aktiven oled-anzeige und verbindung

Also Published As

Publication number Publication date
EP0929104A3 (de) 2003-03-26
DE69941200D1 (de) 2009-09-17
KR100689163B1 (ko) 2007-03-08
US20020089282A1 (en) 2002-07-11
US6633122B2 (en) 2003-10-14
EP0929104B1 (de) 2009-08-05
KR19990067810A (ko) 1999-08-25

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