EP0939979A1 - Systeme laser et amplificateur pour produire un faisceau laser dans la gamme d'ondes visibles - Google Patents

Systeme laser et amplificateur pour produire un faisceau laser dans la gamme d'ondes visibles

Info

Publication number
EP0939979A1
EP0939979A1 EP97951155A EP97951155A EP0939979A1 EP 0939979 A1 EP0939979 A1 EP 0939979A1 EP 97951155 A EP97951155 A EP 97951155A EP 97951155 A EP97951155 A EP 97951155A EP 0939979 A1 EP0939979 A1 EP 0939979A1
Authority
EP
European Patent Office
Prior art keywords
laser
frequency
amplifier
solid
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97951155A
Other languages
German (de)
English (en)
Inventor
Nikolaus Schmitt
Max KÖNIGER
Peter Unger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mercedes Benz Group AG
Original Assignee
DaimlerChrysler AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DaimlerChrysler AG filed Critical DaimlerChrysler AG
Publication of EP0939979A1 publication Critical patent/EP0939979A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3542—Multipass arrangements, i.e. arrangements to make light pass multiple times through the same element, e.g. using an enhancement cavity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers

Definitions

  • Laser and amplifier system for generating laser radiation in the visible wavelength range
  • the invention relates to a laser and amplifier system.
  • lasers are required which emit red, green and blue in the area of the three primary colors (RGB). These lasers typically have to emit powers in the range of 1 W or more. Furthermore, the lasers have to be miniaturized and efficient in order to enable later mass application.
  • Solid-state lasers of this type are generally based on the optical excitation of laser materials made of crystals or glass which are doped with rare d-ions or ions of the transition metals. Either pulsed, mainly mode-locked lasers are used here, which allow efficient frequency conversion due to high pulse powers, or continuously emitting (cw) lasers.
  • Pulsed lasers have the required output power in all three colors, but are still relatively large. In continuous operation (cw) working lasers are significantly smaller.
  • a typical laser for generating the green wavelength in the watt range, e.g. - a diode-pumped Nd: YAG laser with intracavity frequency doubling, pumped with a fiber-coupled IOW diode - takes up a volume of typically 0.5 - 2 liters and, with an output power of 2 W (cw), has an efficiency of typically> 3% electrical optical performance.
  • the lasers are already much smaller and more efficient than mode-locked lasers, it is still difficult to achieve real mass application in a wide range.
  • the lasers would have to have an efficiency of significantly greater than 10% and a volume of approximately 1/20 liters, on the one hand to find space in small, handy systems and on the other hand to be able to be produced at a correspondingly low cost. It is therefore an object of the invention to demonstrate a simple, efficient and miniaturized laser system which enables the generation of primarily continuous visible laser radiation in the watt range.
  • FIG. 1 shows the basic scheme of an arrangement according to the invention of a diode-pumped solid-state laser of low power and a semiconductor amplifier
  • 3 shows a diagram for assigning the suitable semiconductor materials for the respective wavelength ranges of diode-pumped solid-state lasers
  • FIG. 6 shows a typical layer sequence of an InGaAs amplifier structure (taken from ibid.),
  • 7 is a diagram illustrating the dependence of the spectral gain center and charge carrier density in the quantum film (taken from the same), 8 shows an arrangement according to the invention of solid-state lasers and
  • FIG. 9 shows an arrangement according to the invention of a modulator between solid-state laser and semiconductor amplifier for tuning the solid-state laser radiation to the external resonator or for amplitude modulation
  • 10a shows an arrangement according to the invention of a solid-state laser, the laser radiation of which is first resonantly frequency-multiplied and then coupled into a semiconductor amplifier, and
  • FIG. 10b shows an arrangement according to the invention of a solid-state laser with intra-cavity frequency multiplication and subsequent amplification in a semiconductor element.
  • miniaturized and efficient laser systems would represent, for example, electrically pumped semiconductor laser diodes in the three colors red, green and blue, which, similar to the semiconductor laser diodes in the near infrared, could achieve efficiencies of up to 50%.
  • semiconductor lasers are currently still in the research stage, but in the next few years, semiconductor laser diodes, at least in the green and blue wavelength range, are not to be expected, which emit with an acceptable lifespan at the required power and correspondingly good beam quality. Laser diodes of low power are available here in red.
  • the generation of single-frequency laser radiation with a narrow line width at powers significantly greater than 1 W cw is relatively inefficient.
  • an output power of 1 W single-frequency with an optical pump power of 3 W was achieved in a twisted-mode resonator arrangement, which requires an electrical input power of typically 9 W.
  • the laser line width was 15 MHz (see Plorin et.al., Laser in technology, W. Waidelich (ed.), P. 103).
  • the overall efficiency from an electrical to optical point of view is still only less than 8%.
  • the volume of the single-frequency laser is typically 1 liter.
  • semiconductor laser amplifiers which, like semiconductor laser diodes, are composed of an epitaxial layer sequence of, for example, GaAs, GaAlAs, InGaAs or InGaAsP, are particularly simple.
  • semiconductor amplifiers have anti-reflective coatings on both end faces, so that the semiconductor element is operated far below the threshold power required for laser operation as an oscillator. If you now couple laser radiation on one side of the semiconductor element, it is amplified in the electrically pumped semiconductor material.
  • Such arrangements have also been known for many years and are described, for example, in R. Waarts et. al., Electron. Lett. 26 (1990) 1926.
  • Semiconductor laser diodes made of the same material are usually also used as laser oscillators, the radiation of which is to be amplified.
  • Such oscillator amplifier structures (MOPA from Master-Oscillator-Power Amplifier) are preferably built on the same epitaxial substrate and separated in their function by appropriate structuring.
  • Such components are for example in R. Parke, CLEO 93, Tech. Digest, contribution CTuI4 (1993) 108 and are offered commercially.
  • a resonant external frequency multiplication in which the nonlinear medium is introduced in a separate resonator, which is fed with the radiation from the infrared laser, is also only insufficiently possible with semiconductor laser diodes, since both the beam quality and the laser line width are insufficient, to achieve a good mode adaptation on the one hand as well as a significant increase in performance by tuning the laser diode to an external, narrow-band (multiplication) resonator (or tuning a narrow-band resonator to the laser diode).
  • the external resonator would have to be dimensioned correspondingly wide, which results in a low quality and thus only a slight increase in output.
  • Solid-state lasers for example, diode-pumped Nd: YAG lasers, which can have line widths well below the 1 kHz range and which also have very low frequency noise (jitter), are to be used here according to the invention.
  • This can be explained - in addition to other effects such as very high resonator quality - not least due to the fact that the coefficient for changing the optical resonator length and thus the frequency of the laser radiation with temperature is about two orders of magnitude lower in solid state lasers.
  • This coefficient is for semiconductor laser diodes for example typically 0.3 nm / ° C, corresponding to 830 nm of 130 GHz / ° C compared to typically 3.5 GHz / ° C for Nd: YAG lasers.
  • Particularly simple diode-pumped solid-state lasers are microcrystalline lasers which inherently emit single-frequency due to their short resonator length (cf. e.g. Demtröder, Laser Spectroscopy, Springer-Verlag 1982, p. 286, or N. Schmitt, Tunable Microcrystalline Lasers, Shaker-Verlag 1995).
  • the output power of such lasers is typically 30-50 mW.
  • Powerful single-frequency solid-state lasers have a higher frequency noise and, as described above, are much more inefficient and, moreover, mostly complex, which runs against strong miniaturization.
  • a low-power solid-state laser especially a narrow-band, continuously emitting solid-state laser such as, for example, micro-crystal laser (or also monolithic ring laser).
  • One embodiment of the invention is based on the amplification of the laser radiation of a narrow-band, diode-pumped solid-state laser, for example a microcrystalline laser, preferably consisting of rare earth or transition metal-doped crystal or glass materials, by means of a semiconductor amplifier element, which is chosen by the choice of the epitaxial material as well Structuring is adapted to the emission wavelength of the solid-state laser.
  • solid-state lasers which emit in the range between 900 and 1100 nm are particularly suitable for material combinations of GaAlAs, GaAlAs, InGaAs and / or GaAsP.
  • the dots indicate the binary connections, along the line the wavelength and the lattice constant of the tertiary connection change according to the respective percentage of the two binary connections.
  • the areas between these lines indicate the quaternary compounds (i.e. two elements of group III plus two Group V compounds, example InGaAsP).
  • the horizontal lines here mark the connections with the same lattice constant, with the non-horizontal lines the structure of the composition is strained (strained layer).
  • the thin connecting lines for example between GaP and AIP and AIP and AI As, characterize indirect semiconductor junctions.
  • GaAlAs or InGaAsP structures are preferably used, over 900 nm to approx. 1120 nm InAsP, InGaAs or InGaAsP materials.
  • GaAsP is particularly suitable for amplification in the wavelength range around 630 nm.
  • the selection of the semiconductor amplifier materials is based on the specific wavelength range of the laser color to be generated or the frequency wavelength to be multiplied for this purpose. The respective selection is shown below using the specific examples for red, green and blue laser colors. Both material combinations of the ternary connections (i.e. along the lines) and quaternary connections (i.e. in the intermediate area between the lines) are interesting here.
  • the areas of particular interest are dotted and marked with A for the area of the laser radiation that is to be amplified for the generation of red laser radiation, B for the generation of green laser radiation and C for the generation of blue laser radiation by means of frequency doubling following the amplification.
  • the area D denotes material combinations which, as explained below, are particularly suitable for amplifying red laser radiation which was generated by doubling the frequency before the amplification.
  • the gain curve of such semiconductor amplifiers is typically 50-60 nm wide (Fig. 4, taken from Ebeling / Unger, summary of the 2nd interim report R&D funding code 13 N 6374/3, University of Ulm), its focus can be selected by the thickness of the Epitaxial layer (width of the quantum film QW) and doping of the materials can be adjusted accordingly. 5 (taken from ibid.) Shows a typical layer sequence for an InGaAs amplifier.
  • the width of the quantum film QW also has an influence in particular on the carrier density (carrier concentration), which influences the gain fluctuation (FIG. 6, taken from the same place).
  • the reinforcement of such semiconductor structures which are preferably pumped electrically by charge injection, is generally extremely efficient and is typically 50% that saturation intensity required to generate laser radiation in the watt range typically 5-10 mW (FIG. 7, taken from ibid.).
  • FIG. 1 shows such an embodiment of a diode-pumped solid-state laser, consisting of a pump laser diode (1), the radiation of which is optionally transmitted via an optical fiber (3) and solid-state laser material (4), in this example designed as a monolithic microcrystallized with the required mirror layers, whose radiation is coupled into a semiconductor amplifier unit (5).
  • the optical elements (lenses) 2a-c used for the respective coupling are also shown.
  • the optical fiber shown for transmitting the pump light to the microcrystalline laser, as well as all lenses, are optional here and can optionally be omitted.
  • the semiconductor amplifier (5) is preferably pumped electrically via a corresponding feed line (7) by injecting charge carriers into the pn boundary layer.
  • the spatial structure (6) of the amplifier can preferably be either cuboid (broad stripe) or trapezoidal as shown in the figure by way of example, the latter with the advantage of better beam quality at the amplifier output.
  • Lenses or other elements with lens-like properties can be used for focusing.
  • Miniaturized diode-pumped solid-state lasers such as micro-crystal lasers, monolithic ring lasers or generally longitudinally pumped lasers are preferably used as solid-state lasers. Since the semiconductor element is only operated as an amplifier, ie not in resonance, the narrow-band nature of the laser line is maintained in the first order.
  • the combination of the good laser properties of solid-state lasers with the high and efficient amplification of electrically pumped semiconductor elements creates a miniaturized, efficient laser system that generates output power in the watt range with an extremely small laser line width.
  • the microcrystalline laser as an oscillator represents a particularly preferred embodiment according to the invention since, in addition to excellent laser properties, such as are required for external frequency doubling (narrow line width up to 40 Hz, excellent beam profile M ⁇ typically ⁇ 1.2, see Schmitt) , especially miniaturized.
  • Typical dimensions of the entire micro-crystal laser without a pump diode and coupling optics, which consists, for example, of a monolithically vapor-deposited crystal piece, are 2-3 mm Diameter and typically 200-700 ⁇ m thick. The diameter can be further reduced to 1 mm.
  • the micro-crystal laser is thus of the same order of magnitude as the semiconductor amplifier structures (typically a few 100 ⁇ m in two lateral dimensions and 50-100 ⁇ m in thickness) and can thus be easily brought into a common housing with it, which both reduces costs in the Manufacturing as well as the miniaturization of the laser system accommodates.
  • the pump laser diode which also typically measures a few 100 ⁇ m in each dimension and 50-100 ⁇ m in thickness, as well as the coupling optics can either also be introduced into the housing or the131m laser diode is coupled via an optical fiber and arranged in a separate and housing, the latter improving interchangeability.
  • the micro-crystal laser as well as the coupling optics can be metallized on the side and thus, like the semiconductor amplifier and possibly the pump laser diode, can be soldered into a hybrid housing.
  • micro-crystal lasers and semiconductor amplifiers can also be mounted, for example, on the same heat sink, which enables a significant increase in mechanical stability.
  • the microcrystalline laser whose principle of operation is that the resonator of length L is sufficiently short so that only a single longitudinal resonator mode lies in the amplification range ⁇ v of the laser material, written as L ⁇ c / (- n- ⁇ v) (n is the refractive index of the resonator-internal medium; see N. Schmitt, tunable solid-state lasers), but in principle other miniaturized, frequency-stable single-frequency lasers can also be used. These can be, for example, diode-pumped lasers with highly doped materials, which are attached in the vicinity of a mirror, thus avoiding spatial "hole burning" (see GJ Kintz et al., IEEE J. Quant. Electron. 26 (1990) 1457). . Furthermore, it can also be monolithic ring lasers, such as in T. J. Kane, Opt. Lett. 10 (1985) 65.
  • a diode-pumped single-frequency solid-state laser (preferably microcrystalline laser) (4) is used as the laser oscillator, for example for generating blue laser radiation, which emits in the range between 920 nm and 950 nm (for example by using the quasi- Three level transitions nd doped crystal or glass materials, see Kaminskii, Laser Crystals, Springer-Verlag), the radiation of which is then amplified in the semiconductor element (5) and then coupled into a narrow-band external resonator (consisting of mirrors 8a and 8b), which is a suitable one contains nonlinear element (9) (for example in LBO or BBO crystal or the like) for frequency doubling.
  • nonlinear element 9
  • the laser can be tuned to the frequency of the external doubling resonator, or the external doubling resonator can be tuned to the frequency of the laser. Both frequency tuning and (or in combination) tuning using movable mirrors or the like come into question for frequency tuning (cf. Schmitt, tunable micro crystal laser).
  • a modulator (10) for example an integrated optical waveguide modulator, can also be formed between the solid-state laser and the amplifier, consisting of an electro-optical substrate in which a waveguide (11) is structured and provided with electrodes (12a, 12b) be used for frequency or phase modulation, via which the coupling ("luring") of the resonator frequencies takes place (FIG. 9) and, if necessary, the output power of the frequency-multiplied radiation can be modulated.
  • frequency modulation of the solid-state laser radiation can also be carried out by modulating the radiation from the pump laser diode (1).
  • the arrangement according to the invention also has the essential advantage that only the low power of the solid-state laser has to be modulated before amplification, which can be done much more easily than the modulation of high powers (for example by integrated optical waveguide structures, fiber modulators or the like).
  • the modulator (10) can, however, also be an amplitude modulator. This also enables the modulation of the frequency-multiplied laser light, as is required, for example, in display technology. This arrangement of the modulator in the region of relatively low laser power with modulation of the total output power further represents an essential advantage of the arrangement according to the invention.
  • An alternative form of amplitude modulation is also frequency modulation of the solid-state laser or of the external multiplication Resonators, which leads to frequency mismatch, thus preventing efficient frequency doubling for the moment of modulation.
  • the amplitude of the visible laser beam can also be modulated by switching this disturbance on and off.
  • Another alternative method is to modulate the current to pump the semiconductor amplifier. All methods, both frequency or amplitude modulation in front of the amplifier as well as frequency detuning of solid-state lasers or external resonators as well as the modulation of the pump current of the semiconductor amplifier, allow a very high dynamic of the amplitude modulation in comparison to the conventional modulation of the powerful visible laser radiation itself, since its mode of operation is non-linear enters into the generation of visible laser radiation. Furthermore, all of these methods also allow the combination with one another.
  • An arrangement according to FIG. 1 is also used to generate green laser radiation, in which case the solid-state laser is designed in such a way that it emits laser radiation in the range of approximately 1045-1080 nm.
  • the solid-state laser is designed in such a way that it emits laser radiation in the range of approximately 1045-1080 nm.
  • there are a large number of laser transitions of Nd-doped crystal or glass materials (again see Kaminskii, Laser Crystals).
  • the energy balance compared to the balance for the generation of green laser radiation described at the beginning, is calculated as follows: With an electrical input power of 0.75 W (optical pump power 250 mW), a single-frequency output power of approx. 50 mW can be obtained from a micro-crystal laser become. This is amplified in the semiconductor amplifier with an efficiency of 50% to 1-3 W (electrical input power 2-6 W) and then resonantly frequency-doubled as described above (using KTP, KTA, LBO or the like).
  • a doubling efficiency of 70% is assumed, as can be achieved here more realistically, since the microcrystalline laser has an extremely narrow line width, which allows the doubling resonator to be designed in a correspondingly narrow-band manner with a high resonator quality and consequently a correspondingly large power increase at the location of the doubler crystal.
  • an electrical-to-optical efficiency of 1 / 2.75 to 3 / 6.75, i.e. 36-44% can be achieved.
  • either a solid-state laser in the range between 1200 and 1350 nm can be used according to the same scheme. However, special applications require wavelengths of the red laser radiation around 630 nm.
  • An alternative scheme and thus a further exemplary embodiment of the idea according to the invention now consists in firstly doubling the solid-state laser in the range between 1200 and 1350 nm (or multiplying a laser of even longer wavelengths accordingly), and then the red radiation of low power generated thereby after doubling
  • the known semiconductor materials from the above list (or a selection thereof) will be used well, so that visible laser radiation of high power is also generated here using a (diode-pumped) solid-state laser of low power and a semiconductor amplifier element.
  • the frequency multiplication of the solid-state laser can either take place resonantly (FIG.
  • qasi-phase-adapted materials can also be used, for example periodically poled LiNb ⁇ 3, KTP, RTA or the like.
  • a particularly miniaturized, mechanically stable and inexpensive solution can be obtained by at least the (microcrystalline) laser (4), optionally the modulator (10) and the semiconductor amplifier (5), possibly also the laser diode (1) on a common basis , for example on a mounting plate or in a housing.
  • the microcrystalline laser (4) and semiconductor amplifier (5) can even be mounted on the same heat sink, which is then tempered together by a common temperature control element, for example a Peltier element, and which enables a substantial increase in mechanical stability.
  • a common temperature control element for example a Peltier element
  • a laser according to the invention for producing red, green or blue laser color can have dimensions of approximately 3-5 cm ⁇ for the basic wavelength plus approximately 5-10 cm3 for frequency doubling, that is to say approximately less than 15 cm3 overall.
  • a low-power solid-state laser especially a narrow-band, continuously emitting solid-state laser such as microcrystalline laser
  • the semiconductor material for amplification being selected and designed in accordance with the respective wavelength range in terms of composition and structure, the amplification either before the frequency conversion takes place or a frequency conversion is first carried out and this now visible laser light is subsequently amplified.
  • the scheme to be used depends on the spectral range of the possible reinforcement materials.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un système laser et amplificateur pour lequel il est prévu que le rayonnement d'un laser à solide (4) pompé par diode, de faible puissance, de préférence à base de matériaux cristallins ou de matériaux en verre dopés aux terres rares ou au métal de transition, soit injecté dans une puce d'amplification à semi-conducteur (5), réalisée de préférence en GaAs, GaA1As, InGaAs ou en InGaAsP et qui amplifie le faisceau du laser à solide par le choix du système de matériau, ainsi que de la structure épitaxique, de manière adaptée à la longueur d'ondes d'émission du laser à solide, et produit ainsi un faisceau de sortie amplifié par rapport au faisceau laser injecté.
EP97951155A 1996-11-19 1997-11-10 Systeme laser et amplificateur pour produire un faisceau laser dans la gamme d'ondes visibles Withdrawn EP0939979A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19647878A DE19647878A1 (de) 1996-11-19 1996-11-19 Laser- und Verstärkersystem zur Erzeugung von Laserstrahlung im sichtbaren Wellenlängenbereich
DE19647878 1996-11-19
PCT/EP1997/006220 WO1998023000A1 (fr) 1996-11-19 1997-11-10 Systeme laser et amplificateur pour produire un faisceau laser dans la gamme d'ondes visibles

Publications (1)

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EP0939979A1 true EP0939979A1 (fr) 1999-09-08

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EP97951155A Withdrawn EP0939979A1 (fr) 1996-11-19 1997-11-10 Systeme laser et amplificateur pour produire un faisceau laser dans la gamme d'ondes visibles

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EP (1) EP0939979A1 (fr)
JP (1) JP2001504276A (fr)
DE (1) DE19647878A1 (fr)
WO (1) WO1998023000A1 (fr)

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EP2957547A1 (fr) 2009-12-16 2015-12-23 Skyworks Solutions, Inc. Matériaux en céramique diélectrique et procédés associés
US10315959B2 (en) 2016-09-29 2019-06-11 Skyworks Solutions, Inc. Temperature compensated dielectric material

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2957547A1 (fr) 2009-12-16 2015-12-23 Skyworks Solutions, Inc. Matériaux en céramique diélectrique et procédés associés
US10315959B2 (en) 2016-09-29 2019-06-11 Skyworks Solutions, Inc. Temperature compensated dielectric material
US10843974B2 (en) 2016-09-29 2020-11-24 Skyworks Solutions, Inc. Radiofrequency component incorporating temperature compensated dielectric material
US11021403B2 (en) 2016-09-29 2021-06-01 Skyworks Solutions, Inc. Method for forming a temperature compensated dielectric material
US11306032B2 (en) 2016-09-29 2022-04-19 Skyworks Solutions, Inc. Radiofrequency component incorporating temperature compensated dielectric material
US11912627B2 (en) 2016-09-29 2024-02-27 Skyworks Solutions, Inc. Radiofrequency components incorporating temperature compensated dielectric material

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DE19647878A1 (de) 1998-05-20
WO1998023000A1 (fr) 1998-05-28
JP2001504276A (ja) 2001-03-27

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