EP0944810A4 - Procede et appareil ameliores pour mesurer la concentration d'ions implantes dans des materiaux semi-conducteurs - Google Patents

Procede et appareil ameliores pour mesurer la concentration d'ions implantes dans des materiaux semi-conducteurs

Info

Publication number: EP0944810A4
Authority: EP; European Patent Office
Prior art keywords: concentration; measuring; improved method; semiconductor materials; ions implanted
Prior art date: 1997-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP98932942A

Other languages

German (de)

English (en)

Other versions

EP0944810A1 (fr

Inventor

Matthew J Banet

John A Rogers

Martin Fuchs

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Koninklijke Philips Electronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-06-30

Filing date

1998-06-26

Publication date

2007-08-08

1997-06-30 Priority claimed from US08/885,786 external-priority patent/US6052185A/en

1998-06-26 Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV

1999-09-29 Publication of EP0944810A1 publication Critical patent/EP0944810A1/fr

2007-08-08 Publication of EP0944810A4 publication Critical patent/EP0944810A4/fr

Status Withdrawn legal-status Critical Current

Links

150000002500 ions Chemical class 0.000 title 1
239000000463 material Substances 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

Landscapes

Physics & Mathematics (AREA)
Health & Medical Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
General Physics & Mathematics (AREA)
Immunology (AREA)
Pathology (AREA)
Investigating Or Analysing Materials By Optical Means (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)

EP98932942A 1997-06-30 1998-06-26 Procede et appareil ameliores pour mesurer la concentration d'ions implantes dans des materiaux semi-conducteurs Withdrawn EP0944810A4 (fr)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US885786		1997-06-30
US08/885,786 US6052185A (en)	1997-06-30	1997-06-30	Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
US926850		1997-09-10
US08/926,850 US6118533A (en)	1997-06-30	1997-09-10	Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
PCT/US1998/013473 WO1999000641A1 (fr)	1997-06-30	1998-06-26	Procede et appareil ameliores pour mesurer la concentration d'ions implantes dans des materiaux semi-conducteurs

Publications (2)

Publication Number	Publication Date
EP0944810A1 EP0944810A1 (fr)	1999-09-29
EP0944810A4 true EP0944810A4 (fr)	2007-08-08

Family

ID=27128771

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP98932942A Withdrawn EP0944810A4 (fr)	1997-06-30	1998-06-26	Procede et appareil ameliores pour mesurer la concentration d'ions implantes dans des materiaux semi-conducteurs

Country Status (3)

Country	Link
EP (1)	EP0944810A4 (fr)
JP (1)	JP2001500976A (fr)
WO (1)	WO1999000641A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA2281627C (fr) *	1997-12-19	2007-05-29	Bernard Siu	Systeme et procede d'evaluation d'integrite de liaison par ultrasons au laser
US6795198B1 (en) *	1998-05-28	2004-09-21	Martin Fuchs	Method and device for measuring thin films and semiconductor substrates using reflection mode geometry
JP7719648B2 (ja) *	2021-07-12	2025-08-06	住友重機械工業株式会社	アニール評価装置、アニール装置、アニール評価方法、及びアニール方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1996023197A1 (fr) *	1995-01-24	1996-08-01	Massachusetts Institute Of Technology	Dispositif et procede pour mesures optiques a resolution temporelle

1998
- 1998-06-26 EP EP98932942A patent/EP0944810A4/fr not_active Withdrawn
- 1998-06-26 WO PCT/US1998/013473 patent/WO1999000641A1/fr not_active Ceased
- 1998-06-26 JP JP11505843A patent/JP2001500976A/ja not_active Ceased

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1996023197A1 (fr) *	1995-01-24	1996-08-01	Massachusetts Institute Of Technology	Dispositif et procede pour mesures optiques a resolution temporelle

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
E. GAUBAS ET AL.: "INVESTIGATION OF RECOMBINATION PARAMETERS IN ION IMPLNATED LAYER.SUBSTRATE Si STRUCTURRES", DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES, MAT. RES. SOC. SYMPOSIUM PROCEEDINGS, 17.-21. APRIL 1995, SAN FRANCISCO, CA, USA, vol. 378, 17 April 1995 (1995-04-17), pages 603 - 608, XP009077882 *
HIROYUKI NISHIMURA ET AL: "APPLICATION OF LASER-INDUCED GHZ SURFACE ACOUSTIC WAVES TO EVALUATE ION-IMPLANTED SEMICONDUCTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 31, no. 31 - 1, January 1992 (1992-01-01), pages 91 - 93, XP000322480, ISSN: 0021-4922 *
HUI NIE ET AL: "High-speed, low-noise resonant-cavity avalanche photodiodes", LASERS AND ELECTRO-OPTICS SOCIETY ANNUAL MEETING, 1996. LEOS 96., IEEE BOSTON, MA, USA 18-19 NOV. 1996, NEW YORK, NY, USA,IEEE, US, vol. 1, 18 November 1996 (1996-11-18), pages 392 - 393, XP010205231, ISBN: 0-7803-3160-5 *
J. VATKUS ET AL.: "Mapping of GaAs and Si wafers and ion-implanted layers by light-induced scattering and absorption of IR light", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 7, no. 1A, 1 January 1992 (1992-01-01), pages A131 - A134, XP002417038 *
JOHN ASHLEY ROGERS: "Time-Resolved Photoacoustic and Photothermal Measurements on Surfaces, Thin Films and Multilayer Assemblies", THESIS, XX, XX, 12 June 1995 (1995-06-12), pages 59 - 112, XP002424464 *
KIM J ET AL: "NOISE-FREE AVALANCHE MULTIPLICATION IN SI SOLID STATE PHOTOMULTIPLIERS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 70, no. 21, 26 May 1997 (1997-05-26), pages 2852 - 2854, XP000658440, ISSN: 0003-6951 *
See also references of WO9900641A1 *
T.SAWADA, A. HARATA: "Transient reflecting grating for sub-surface analysis: GHz ultrasonic and thermal spectroscopies and imaging", APPLIED PHYSICS A, vol. 61, no. 3, 1 September 1995 (1995-09-01), pages 263 - 268, XP009077902 *
ZEBDA Y ET AL: "FREQUENCY RESPONSE AND GAIN OF MULTIQUANTUM WELL (MQW) AVALANCHE PHOTODIODE", JOURNAL OF OPTICAL COMMUNICATIONS, FACHVERLAG SCHIELE & SCHON, BERLIN, DE, vol. 18, no. 3, 1 June 1997 (1997-06-01), pages 99 - 103, XP000677447, ISSN: 0173-4911 *

Also Published As

Publication number	Publication date
EP0944810A1 (fr)	1999-09-29
WO1999000641A1 (fr)	1999-01-07
JP2001500976A (ja)	2001-01-23

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Legal Events

Date	Code	Title	Description
1999-08-13	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1999-09-29	17P	Request for examination filed	Effective date: 19990707
1999-09-29	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FR GB
2007-04-25	RIC1	Information provided on ipc code assigned before grant	Ipc: G01N 21/17 20060101AFI20070307BHEP
2007-08-08	A4	Supplementary search report drawn up and despatched	Effective date: 20070710
2008-03-07	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2008-04-09	18D	Application deemed to be withdrawn	Effective date: 20071009