EP0967653A3 - Halbleiter-Grabenkondensator für DRAM - Google Patents

Halbleiter-Grabenkondensator für DRAM Download PDF

Info

Publication number
EP0967653A3
EP0967653A3 EP99304810A EP99304810A EP0967653A3 EP 0967653 A3 EP0967653 A3 EP 0967653A3 EP 99304810 A EP99304810 A EP 99304810A EP 99304810 A EP99304810 A EP 99304810A EP 0967653 A3 EP0967653 A3 EP 0967653A3
Authority
EP
European Patent Office
Prior art keywords
trench capacitor
trench
epi layer
semiconductor dram
dram trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99304810A
Other languages
English (en)
French (fr)
Other versions
EP0967653A2 (de
Inventor
Martin Schrems
Herbert Schaefer
Jack Mandelman
Reinhard Stengl
Joachim Hoepfner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
International Business Machines Corp
Original Assignee
Siemens AG
Siemens Corp
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp, International Business Machines Corp filed Critical Siemens AG
Publication of EP0967653A2 publication Critical patent/EP0967653A2/de
Publication of EP0967653A3 publication Critical patent/EP0967653A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
EP99304810A 1998-06-26 1999-06-18 Halbleiter-Grabenkondensator für DRAM Withdrawn EP0967653A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/105,945 US5945704A (en) 1998-04-06 1998-06-26 Trench capacitor with epi buried layer
US105945 1998-06-26

Publications (2)

Publication Number Publication Date
EP0967653A2 EP0967653A2 (de) 1999-12-29
EP0967653A3 true EP0967653A3 (de) 2003-07-02

Family

ID=22308666

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99304810A Withdrawn EP0967653A3 (de) 1998-06-26 1999-06-18 Halbleiter-Grabenkondensator für DRAM

Country Status (6)

Country Link
US (1) US5945704A (de)
EP (1) EP0967653A3 (de)
JP (1) JP2000031427A (de)
KR (1) KR100621714B1 (de)
CN (1) CN1222999C (de)
TW (1) TW429609B (de)

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US6137128A (en) 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
US6214687B1 (en) 1999-02-17 2001-04-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
US6150212A (en) * 1999-07-22 2000-11-21 International Business Machines Corporation Shallow trench isolation method utilizing combination of spacer and fill
AU7565400A (en) * 1999-09-17 2001-04-17 Telefonaktiebolaget Lm Ericsson (Publ) A self-aligned method for forming deep trenches in shallow trenches for isolation of semiconductor devices
US6265279B1 (en) * 1999-09-24 2001-07-24 Infineon Technologies Ag Method for fabricating a trench capacitor
US6339228B1 (en) * 1999-10-27 2002-01-15 International Business Machines Corporation DRAM cell buried strap leakage measurement structure and method
JP3479010B2 (ja) * 1999-11-04 2003-12-15 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP3457236B2 (ja) * 1999-11-05 2003-10-14 茂徳科技股▲ふん▼有限公司 深いトレンチキャパシター蓄積電極の製造方法
DE19956078B4 (de) * 1999-11-22 2006-12-28 Infineon Technologies Ag Verfahren zur Herstellung eines Isolationskragens in einem Grabenkondensators
DE19956978B4 (de) * 1999-11-26 2008-05-15 Promos Technologies, Inc. Verfahren zur Herstellung eines tiefen flaschenförmigen Graben-Kondensators
DE19957123B4 (de) * 1999-11-26 2006-11-16 Infineon Technologies Ag Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher
DE10014920C1 (de) * 2000-03-17 2001-07-26 Infineon Technologies Ag Verfahren zur Herstellung eines Grabenkondensators
DE10019090A1 (de) * 2000-04-12 2001-10-25 Infineon Technologies Ag Grabenkondensator sowie dazugehöriges Herstellungsverfahren
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US6404000B1 (en) 2000-06-22 2002-06-11 International Business Machines Corporation Pedestal collar structure for higher charge retention time in trench-type DRAM cells
US6376324B1 (en) 2000-06-23 2002-04-23 International Business Machines Corporation Collar process for reduced deep trench edge bias
US6373086B1 (en) * 2000-06-29 2002-04-16 International Business Machines Corporation Notched collar isolation for suppression of vertical parasitic MOSFET and the method of preparing the same
DE10034003A1 (de) * 2000-07-07 2002-01-24 Infineon Technologies Ag Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren
US6391720B1 (en) * 2000-09-27 2002-05-21 Chartered Semiconductor Manufacturing Ltd. Process flow for a performance enhanced MOSFET with self-aligned, recessed channel
US6261894B1 (en) * 2000-11-03 2001-07-17 International Business Machines Corporation Method for forming dual workfunction high-performance support MOSFETs in EDRAM arrays
JP3808700B2 (ja) * 2000-12-06 2006-08-16 株式会社東芝 半導体装置及びその製造方法
US6544838B2 (en) 2001-03-13 2003-04-08 Infineon Technologies Ag Method of deep trench formation with improved profile control and surface area
US6518118B2 (en) 2001-03-15 2003-02-11 International Business Machines Corporation Structure and process for buried bitline and single sided buried conductor formation
US6809368B2 (en) * 2001-04-11 2004-10-26 International Business Machines Corporation TTO nitride liner for improved collar protection and TTO reliability
DE10121778B4 (de) * 2001-05-04 2005-12-01 Infineon Technologies Ag Verfahren zur Erzeugung eines Dotierprofils bei einer Gasphasendotierung
DE10128718B4 (de) * 2001-06-13 2005-10-06 Infineon Technologies Ag Grabenkondensator einer DRAM-Speicherzelle mit metallischem Collarbereich und nicht-metallischer Leitungsbrücke zum Auswahltransistor
EP1278239B1 (de) 2001-07-20 2005-09-21 Infineon Technologies AG Verfahren zur Herstellung selbstjustierender Maskenschichten
TW501206B (en) * 2001-10-03 2002-09-01 Promos Technologies Inc Manufacturing method of buried strap diffusion area
US20030107111A1 (en) * 2001-12-10 2003-06-12 International Business Machines Corporation A 3-d microelectronic structure including a vertical thermal nitride mask
DE10205077B4 (de) * 2002-02-07 2007-03-08 Infineon Technologies Ag Halbleiterspeicherzelle mit einem Graben und einem planaren Auswahltransistor und Verfahren zu ihrer Herstellung
US6885080B2 (en) * 2002-02-22 2005-04-26 International Business Machines Corporation Deep trench isolation of embedded DRAM for improved latch-up immunity
US6821864B2 (en) * 2002-03-07 2004-11-23 International Business Machines Corporation Method to achieve increased trench depth, independent of CD as defined by lithography
US6686595B2 (en) 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US6943426B2 (en) * 2002-08-14 2005-09-13 Advanced Analogic Technologies, Inc. Complementary analog bipolar transistors with trench-constrained isolation diffusion
US6984860B2 (en) 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
DE10303963B4 (de) * 2003-01-31 2005-02-10 Infineon Technologies Ag Integrierte Schaltungsanordnung
JP4483179B2 (ja) * 2003-03-03 2010-06-16 株式会社デンソー 半導体装置の製造方法
DE10334547B4 (de) * 2003-07-29 2006-07-27 Infineon Technologies Ag Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist
US20050164469A1 (en) * 2004-01-28 2005-07-28 Infineon Technologies North America Corp. Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches
US7291541B1 (en) 2004-03-18 2007-11-06 National Semiconductor Corporation System and method for providing improved trench isolation of semiconductor devices
US7041553B2 (en) * 2004-06-02 2006-05-09 International Business Machines Corporation Process for forming a buried plate
US7633110B2 (en) * 2004-09-21 2009-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell
TWI246700B (en) * 2005-03-09 2006-01-01 Promos Technologies Inc Trench capacitor and method for preparing the same
US7199020B2 (en) * 2005-04-11 2007-04-03 Texas Instruments Incorporated Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
TWI278069B (en) * 2005-08-23 2007-04-01 Nanya Technology Corp Method of fabricating a trench capacitor having increased capacitance
WO2007105840A1 (en) * 2006-03-14 2007-09-20 Nine Architech Co., Ltd. Connecting structure
US20080124890A1 (en) * 2006-06-27 2008-05-29 Macronix International Co., Ltd. Method for forming shallow trench isolation structure
KR20090051894A (ko) * 2007-11-20 2009-05-25 주식회사 동부하이텍 반도체 소자의 제조 방법
US20100155801A1 (en) * 2008-12-22 2010-06-24 Doyle Brian S Integrated circuit, 1T-1C embedded memory cell containing same, and method of manufacturing 1T-1C memory cell for embedded memory application
US8361875B2 (en) * 2009-03-12 2013-01-29 International Business Machines Corporation Deep trench capacitor on backside of a semiconductor substrate
US20130043559A1 (en) * 2011-08-17 2013-02-21 International Business Machines Corporation Trench formation in substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0259629A1 (de) * 1986-08-19 1988-03-16 Siemens Aktiengesellschaft Verfahren zum Herstellen einer definierten Dotierung in den vertikalen Seitenwänden und den Böden von in Halbleitersubstrate eingebrachten Gräben
US5395786A (en) * 1994-06-30 1995-03-07 International Business Machines Corporation Method of making a DRAM cell with trench capacitor
EP0735581A1 (de) * 1995-03-30 1996-10-02 Siemens Aktiengesellschaft DRAM-Grabenkondensator mit isolierendem Ring
EP0949684A2 (de) * 1998-04-06 1999-10-13 Siemens Aktiengesellschaft Grabenkondensator mit epitaktischer vergrabener Schicht

Family Cites Families (5)

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KR910007180B1 (ko) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Sdtsac구조로 이루어진 dram셀 및 그 제조방법
JPH0637275A (ja) * 1992-07-13 1994-02-10 Toshiba Corp 半導体記憶装置及びその製造方法
US5658816A (en) 1995-02-27 1997-08-19 International Business Machines Corporation Method of making DRAM cell with trench under device for 256 Mb DRAM and beyond
US5827765A (en) * 1996-02-22 1998-10-27 Siemens Aktiengesellschaft Buried-strap formation in a dram trench capacitor
TW366585B (en) * 1996-08-17 1999-08-11 United Microelectronics Corp Manufacturing method of low-temperature epitaxy titanium silicide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0259629A1 (de) * 1986-08-19 1988-03-16 Siemens Aktiengesellschaft Verfahren zum Herstellen einer definierten Dotierung in den vertikalen Seitenwänden und den Böden von in Halbleitersubstrate eingebrachten Gräben
US5395786A (en) * 1994-06-30 1995-03-07 International Business Machines Corporation Method of making a DRAM cell with trench capacitor
EP0735581A1 (de) * 1995-03-30 1996-10-02 Siemens Aktiengesellschaft DRAM-Grabenkondensator mit isolierendem Ring
EP0949684A2 (de) * 1998-04-06 1999-10-13 Siemens Aktiengesellschaft Grabenkondensator mit epitaktischer vergrabener Schicht

Also Published As

Publication number Publication date
JP2000031427A (ja) 2000-01-28
TW429609B (en) 2001-04-11
CN1248066A (zh) 2000-03-22
US5945704A (en) 1999-08-31
KR20000006496A (ko) 2000-01-25
EP0967653A2 (de) 1999-12-29
KR100621714B1 (ko) 2006-09-06
CN1222999C (zh) 2005-10-12

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