EP1014071A3 - Procédé et dispositif automatique de mesure d'une marquage d'aberration de coma - Google Patents

Procédé et dispositif automatique de mesure d'une marquage d'aberration de coma Download PDF

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Publication number
EP1014071A3
EP1014071A3 EP99125043A EP99125043A EP1014071A3 EP 1014071 A3 EP1014071 A3 EP 1014071A3 EP 99125043 A EP99125043 A EP 99125043A EP 99125043 A EP99125043 A EP 99125043A EP 1014071 A3 EP1014071 A3 EP 1014071A3
Authority
EP
European Patent Office
Prior art keywords
isosceles triangle
order diffraction
elongated isosceles
diffraction gratings
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99125043A
Other languages
German (de)
English (en)
Other versions
EP1014071A2 (fr
Inventor
Hirofumi c/o NEC Corporation Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP1014071A2 publication Critical patent/EP1014071A2/fr
Publication of EP1014071A3 publication Critical patent/EP1014071A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Transform (AREA)
EP99125043A 1998-12-15 1999-12-15 Procédé et dispositif automatique de mesure d'une marquage d'aberration de coma Withdrawn EP1014071A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10356299A JP2000180302A (ja) 1998-12-15 1998-12-15 コマ収差自動計測用マークと計測方法
JP35629998 1998-12-15

Publications (2)

Publication Number Publication Date
EP1014071A2 EP1014071A2 (fr) 2000-06-28
EP1014071A3 true EP1014071A3 (fr) 2000-07-12

Family

ID=18448343

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99125043A Withdrawn EP1014071A3 (fr) 1998-12-15 1999-12-15 Procédé et dispositif automatique de mesure d'une marquage d'aberration de coma

Country Status (4)

Country Link
US (1) US6323945B1 (fr)
EP (1) EP1014071A3 (fr)
JP (1) JP2000180302A (fr)
KR (1) KR20000048140A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002131185A (ja) * 2000-10-20 2002-05-09 Nec Corp コマ収差の測定用マスク及びコマ収差の測定方法
US6538753B2 (en) 2001-05-22 2003-03-25 Nikon Precision, Inc. Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools
US6956659B2 (en) * 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
US6974653B2 (en) * 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks
JP2009277711A (ja) * 2008-05-12 2009-11-26 Canon Inc 露光装置、補正方法及びデバイス製造方法
CN104330240B (zh) * 2013-12-13 2016-08-31 北京印刷学院 一种用分光光度计测量光柱镭射纸光栅参数的方法
CN106644410B (zh) * 2016-12-21 2019-04-09 信利光电股份有限公司 一种摄像模组光心位置测量方法及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63306624A (ja) * 1987-06-09 1988-12-14 Nikon Corp アライメント方法
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
EP0849638A2 (fr) * 1996-12-19 1998-06-24 Nikon Corporation Méthode de mesure de l'aberration d'un système de projection optique
US5835227A (en) * 1997-03-14 1998-11-10 Nikon Precision Inc. Method and apparatus for determining performance characteristics in lithographic tools

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814829A (en) * 1986-06-12 1989-03-21 Canon Kabushiki Kaisha Projection exposure apparatus
US5402224A (en) * 1992-09-25 1995-03-28 Nikon Corporation Distortion inspecting method for projection optical system
US5615006A (en) * 1992-10-02 1997-03-25 Nikon Corporation Imaging characteristic and asymetric abrerration measurement of projection optical system
US5300786A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JPH10232185A (ja) 1996-12-19 1998-09-02 Nikon Corp 投影光学系の収差測定方法
US6088113A (en) * 1998-02-17 2000-07-11 Samsung Electronics Co., Ltd. Focus test mask for projection exposure system, focus monitoring system using the same, and focus monitoring method
JPH11297614A (ja) * 1998-04-09 1999-10-29 Nikon Corp コマ収差測定装置および該装置を備えた投影露光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63306624A (ja) * 1987-06-09 1988-12-14 Nikon Corp アライメント方法
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
EP0849638A2 (fr) * 1996-12-19 1998-06-24 Nikon Corporation Méthode de mesure de l'aberration d'un système de projection optique
US5835227A (en) * 1997-03-14 1998-11-10 Nikon Precision Inc. Method and apparatus for determining performance characteristics in lithographic tools

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 144 (E - 740) 10 April 1989 (1989-04-10) *

Also Published As

Publication number Publication date
US6323945B1 (en) 2001-11-27
EP1014071A2 (fr) 2000-06-28
JP2000180302A (ja) 2000-06-30
KR20000048140A (ko) 2000-07-25

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