EP1024513A4 - Halbleitende photoelektrische oberfläche - Google Patents

Halbleitende photoelektrische oberfläche

Info

Publication number: EP1024513A4
Authority: EP; European Patent Office
Prior art keywords: semiconductor photoelectric; photoelectric surface; semiconductor; photoelectric
Prior art date: 1997-09-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP98941849A

Other languages

English (en)

French (fr)

Other versions

EP1024513A1 (de

EP1024513B1 (de

Inventor

Tokuaki Nihashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-09-24

Filing date

1998-09-11

Publication date

2000-09-20

1998-09-11 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

2000-08-02 Publication of EP1024513A1 publication Critical patent/EP1024513A1/de

2000-09-20 Publication of EP1024513A4 publication Critical patent/EP1024513A4/de

2002-08-07 Application granted granted Critical

2002-08-07 Publication of EP1024513B1 publication Critical patent/EP1024513B1/de

2018-09-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

EP98941849A 1997-09-24 1998-09-11 Halbleitende photoelektrische oberfläche Expired - Lifetime EP1024513B1 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP25883797		1997-09-24
JP25883797A JPH1196896A (ja)	1997-09-24	1997-09-24	半導体光電面
PCT/JP1998/004119 WO1999016098A1 (fr)	1997-09-24	1998-09-11	Surface photoelectrique de semi-conducteur

Publications (3)

Publication Number	Publication Date
EP1024513A1 EP1024513A1 (de)	2000-08-02
EP1024513A4 true EP1024513A4 (de)	2000-09-20
EP1024513B1 EP1024513B1 (de)	2002-08-07

Family

ID=17325721

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP98941849A Expired - Lifetime EP1024513B1 (de)	1997-09-24	1998-09-11	Halbleitende photoelektrische oberfläche

Country Status (5)

Country	Link
EP (1)	EP1024513B1 (de)
JP (1)	JPH1196896A (de)
AU (1)	AU9002998A (de)
DE (1)	DE69807103T2 (de)
WO (1)	WO1999016098A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
RU2249877C2 (ru) *	2003-04-29	2005-04-10	Бенеманская Галина Вадимовна	Устройство для получения фотоэлектронной эмиссии в вакуум
JP2006302843A (ja) *	2005-04-25	2006-11-02	Hamamatsu Photonics Kk	光電面及びそれを備える電子管
RU2454750C2 (ru) *	2010-08-02	2012-06-27	Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН	Фотокатод
CN102087937A (zh) *	2011-01-07	2011-06-08	南京理工大学	指数掺杂GaN紫外光电阴极材料结构及其制备方法
US9478402B2 (en) *	2013-04-01	2016-10-25	Kla-Tencor Corporation	Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
CN105428183B (zh) *	2015-11-17	2017-08-04	南京理工大学	一种反射式NEA GaN纳米线阵列光电阴极及制备方法
WO2018222528A1 (en)	2017-05-30	2018-12-06	Carrier Corporation	Semiconductor film and phototube light detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE673078A (de) *	1964-12-02	1966-05-31
DE1901333A1 (de) *	1968-01-18	1969-08-28	Varian Associates	Photoemitter
EP0066926A1 (de) *	1981-06-03	1982-12-15	Laboratoires D'electronique Et De Physique Appliquee L.E.P.	Halbleiterelektronenemissionsvorrichtung deren aktive Schicht einen Dotierungsgradient aufweist
WO1991014283A1 (en) *	1990-03-15	1991-09-19	Varian Associates, Inc.	Improved transferred electron iii-v semiconductor photocathode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3631303A (en) *	1970-01-19	1971-12-28	Varian Associates	Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
FR2217805A1 (en) *	1973-02-13	1974-09-06	Labo Electronique Physique	Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
US4352117A (en) *	1980-06-02	1982-09-28	International Business Machines Corporation	Electron source
JPH0750587B2 (ja) *	1991-02-25	1995-05-31	浜松ホトニクス株式会社	半導体光電子放出体
JPH06223709A (ja) *	1993-01-25	1994-08-12	Katsumi Kishino	偏極電子線発生素子

1997
- 1997-09-24 JP JP25883797A patent/JPH1196896A/ja active Pending
1998
- 1998-09-11 WO PCT/JP1998/004119 patent/WO1999016098A1/ja not_active Ceased
- 1998-09-11 AU AU90029/98A patent/AU9002998A/en not_active Abandoned
- 1998-09-11 DE DE69807103T patent/DE69807103T2/de not_active Expired - Fee Related
- 1998-09-11 EP EP98941849A patent/EP1024513B1/de not_active Expired - Lifetime

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE673078A (de) *	1964-12-02	1966-05-31
DE1901333A1 (de) *	1968-01-18	1969-08-28	Varian Associates	Photoemitter
EP0066926A1 (de) *	1981-06-03	1982-12-15	Laboratoires D'electronique Et De Physique Appliquee L.E.P.	Halbleiterelektronenemissionsvorrichtung deren aktive Schicht einen Dotierungsgradient aufweist
WO1991014283A1 (en) *	1990-03-15	1991-09-19	Varian Associates, Inc.	Improved transferred electron iii-v semiconductor photocathode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H.SONNENBERG: "effect of acceptor density on photoemission from p-GaAs-Cs and -Cs2O", JOURNAL OF APPLIED PHYSICS, vol. 40, no. 8, July 1969 (1969-07-01), pages 3414 - 3416, XP002143506 *
See also references of WO9916098A1 *

Also Published As

Publication number	Publication date
DE69807103T2 (de)	2003-01-23
WO1999016098A1 (fr)	1999-04-01
JPH1196896A (ja)	1999-04-09
AU9002998A (en)	1999-04-12
DE69807103D1 (de)	2002-09-12
EP1024513A1 (de)	2000-08-02
EP1024513B1 (de)	2002-08-07

Legal Events

Date	Code	Title	Description
2000-06-16	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2000-08-02	17P	Request for examination filed	Effective date: 20000217
2000-08-02	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FR GB
2000-09-20	A4	Supplementary search report drawn up and despatched	Effective date: 20000808
2000-09-20	AK	Designated contracting states	Kind code of ref document: A4 Designated state(s): DE FR GB
2001-03-21	17Q	First examination report despatched	Effective date: 20010206
2001-10-03	GRAG	Despatch of communication of intention to grant	Free format text: ORIGINAL CODE: EPIDOS AGRA
2002-02-13	GRAG	Despatch of communication of intention to grant	Free format text: ORIGINAL CODE: EPIDOS AGRA
2002-02-13	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
2002-05-17	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
2002-06-21	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
2002-08-07	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): DE FR GB
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2002-09-12	REF	Corresponds to:	Ref document number: 69807103 Country of ref document: DE Date of ref document: 20020912
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2009-05-27	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 20080911
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