EP1105703A1 - Procede et dispositif de surveillance des operations de traitement au plasma - Google Patents

Procede et dispositif de surveillance des operations de traitement au plasma

Info

Publication number
EP1105703A1
EP1105703A1 EP99918803A EP99918803A EP1105703A1 EP 1105703 A1 EP1105703 A1 EP 1105703A1 EP 99918803 A EP99918803 A EP 99918803A EP 99918803 A EP99918803 A EP 99918803A EP 1105703 A1 EP1105703 A1 EP 1105703A1
Authority
EP
European Patent Office
Prior art keywords
plasma
processing chamber
optical emissions
data
calibration light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99918803A
Other languages
German (de)
English (en)
Other versions
EP1105703A4 (fr
Inventor
Michael Lane Smith, Jr.
Joel O'don Stevenson
Pamela Denise Peardon Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Technology and Engineering Solutions of Sandia LLC
Original Assignee
Sandia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/065,680 external-priority patent/US6077386A/en
Priority claimed from US09/065,359 external-priority patent/US6157447A/en
Priority claimed from US09/065,203 external-priority patent/US6192826B1/en
Priority claimed from US09/065,006 external-priority patent/US6090302A/en
Priority claimed from US09/065,362 external-priority patent/US6132577A/en
Priority claimed from US09/064,793 external-priority patent/US6134005A/en
Priority claimed from US09/064,970 external-priority patent/US6269278B1/en
Priority claimed from US09/064,991 external-priority patent/US6246473B1/en
Priority claimed from US09/064,965 external-priority patent/US6254717B1/en
Priority claimed from US09/065,274 external-priority patent/US6275740B1/en
Priority claimed from US09/065,307 external-priority patent/US6261470B1/en
Priority claimed from US09/065,257 external-priority patent/US6123983A/en
Priority claimed from US09/064,957 external-priority patent/US6221679B1/en
Priority claimed from US09/065,358 external-priority patent/US6419801B1/en
Priority claimed from US09/065,247 external-priority patent/US6169933B1/en
Priority claimed from US09/065,195 external-priority patent/US6223755B1/en
Priority claimed from US09/064,966 external-priority patent/US6165312A/en
Priority claimed from US09/290,903 external-priority patent/US6383402B1/en
Application filed by Sandia Corp filed Critical Sandia Corp
Publication of EP1105703A1 publication Critical patent/EP1105703A1/fr
Publication of EP1105703A4 publication Critical patent/EP1105703A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/443—Emission spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J2003/2866—Markers; Calibrating of scan

Definitions

  • the present invention generally relates to the field of plasma processes and, more particularly, to monitoring/evaluating such plasma processes.
  • Plasma is used in various types of industrial-type processes in the semiconductor and printed wiring board industries, as well as in various other industries such as in the medical equipment and automotive industries.
  • One common use of plasma is for etching away materials in an isolated or controlled environment.
  • Various types of materials may be etched by one or more plasma compositions, including glasses, silicon or other substrate materials, organics such as photoresist, waxes, plastics, rubbers, biological agents, and vegetable matter, and metals such as copper, aluminum, titanium, tungsten, and gold.
  • Plasma is also utilized for depositing materials such as organics and metals onto an appropriate surface by various techniques, such as via chemical vapor deposition.
  • Sputtering operations may also utilize plasmas to generate ions which sputter away material from a source (e.g., metals, organics) and deposit these materials onto a target such as a substrate.
  • Surface modification operations also use plasmas, including operations such as surface cleaning, surface activation, surface passivation, surface roughening, surface smoothing, micromachining, hardening, and patterning.
  • Plasma processing operations can have a significant effect on a company's profit margin. This is particularly true in the semiconductor and printed wiring board industries. Consider that a single semiconductor fabrication facility may have up to 200-300 processing chambers and that each processing chamber in commercial production may process at least about 15-20 wafers per hour.
  • an eight inch wafer which is processed in one of these chambers in some cases may be used to produce up to 1 ,500 semiconductor chips which are each worth at least about $125, and that each of these semiconductor chips are in effect "pre-sold.” Therefore, a single wafer which has undergone an abnormal plasma process and which is scrapped will result in lost revenues of at least about $187,500.
  • plasma recipe The particular plasma process which acts on the wafer such that a semiconductor device may be formed therefrom is commonly referred to as a plasma recipe.
  • a plasma recipe as used in relation to the present invention means a plasma processing protocol which includes one or more different and distinct plasma steps (e.g., a certain combination of certain steps).
  • "Different and distinct" means that each plasma step produces a different, predetermined result on the product being processed (e.g., a wafer).
  • Differences between plasma steps may be realized by changing one or more process conditions, including without limitation the composition of the plasma, the temperature and pressure in the processing chamber, DC bias, pumping speeds, and power settings.
  • the sequence of the plasma steps, as well as the result of each plasma step, also produces a desired overall or cumulative end result for the plasma recipe.
  • Plasma processes may be run on wafers in a commercial production facility in the following manner.
  • a cassette or boat which stores a plurality of wafers (e.g., 24) is provided to a location which may be accessed by a wafer handling system associated with one or more processing chambers.
  • One wafer at a time is processed in the chamber, although some chambers may accommodate more than one wafer at a time for simultaneous plasma processing.
  • One or more qualification wafers may be included in each cassette, and the rest are commonly referred to as production wafers. Both the qualification and production wafers are exposed to the same plasma process in the chamber.
  • One common monitoring technique associated with plasma recipes run on wafers is endpoint detection
  • Current endpoint detection systems attempt to identify when a single plasma step of a given plasma recipe is complete, or more specifically that point in time when the predetermined result associated with the plasma step has been produced on the product
  • a representative "predetermined" result is when a layer of a multi- layered wafer has been completely removed in a manner defined by a mask or the like
  • prior art systems exist for attempting to identify the endpoint of a single step of a multiple step plasma recipe, no known system is able to identify the endpoint of each step of a multiple step plasma recipe, or even any two steps of a multiple step recipe for that matter
  • the amount of gases which are used to generate the plasma may be reduced by terminating a given plasma step when it has achieved its desired result More importantly, terminating a given plasma step at or very shortly after its endpoint has been reached prevents the wafer from being over-etched to an undesired degree Over-etching a wafer removes more material from the wafer than desired, such as by etching away portions of the layer immediately following that which was to be etched, and may also result in the undesirable sputtering of materials onto other portions of the wafer The resulting effect on the semiconductor dev ⁇ ce(s) formed from this wafer may reduce the quality of the semiconductor dev ⁇ ce(s), may go undetected until the semiconductor dev ⁇ ce(s) has been delivered to the customer which would not be desirable if the dev ⁇ ce(s) was defective or deficient in any way, or both Finally, a certain degree of over- etching of
  • Endpoint detection is desirable in theory for plasma processes Certain deficiencies became evident as attempts were made to implement endpoint detection techniques in commercial fabrication facilities Initially, all known endpoint detection techniques were developed by first chemically analyzing the subject plasma operation to identify a wavelength to key in on as being indicative of endpoint Fabrication facilities typically run a multiplicity of plasma recipes As such, these known endpoint detection techniques increase costs due to the required retention of an experienced chemist Moreover, these techniques often do not produce the intended result - that is the wavelength which is selected by the chemist may in fact not be at all indicative of endpoint when the plasma step is actually run since it is only "theory" based A given endpoint detection technique may also be dependent upon the processing chamber on which the technique was developed Accurate results may not be realized when the endpoint detection technique is used on other processing chambers Therefore, it would be desirable to have a plasma monitoring system in which the amount of chemical "pre-analysis" is reduced and which would allow the plasma monitoring system to work to an acceptable degree on multiple processing chambers (i e , a generic plasma monitoring system which was
  • Plasma processing of product (e g , wafers) within the processing chamber will likely have an effect on the interior of the processing chamber which in turn may have an adverse effect on subsequent plasma recipes which are run on product within the chamber
  • Certain "byproducts" of a plasma process run on product in the chamber may be deposited on one or more interior surfaces of the chamber These deposits may have some type of adverse effect on one or more plasma recipes which are being run in the processing chamber (e g , a processing chamber may be used to run more than one type of plasma recipe)
  • Deposits on the interior surfaces of the processing chamber may have the following exemplary effects on the performance of the chamber a longer period of time may be required to reach the endpoint of one or more plasma steps of the plasma recipe, endpoint of one or more plasma steps may never be reached; and a result which is different than expected of the current plasma step may be undesirably realized (i.e., an unexpected/undesirable result).
  • Processing chambers are typically removed from the production line on a scheduled, periodic basis for a cleaning operation to address the above-noted conditions, regardless of whether the chamber is actually in condition for a cleaning and even if the chamber was ready for cleaning well before this time. It would be desirable to have a plasma monitoring system which would provide an indication of when a processing chamber should be removed from production for cleaning. Cleaning operations which are used to address the above-noted deposits include plasma cleans of the interior of the processing chamber, wet cleans of the interior of the processing chamber, and replacement of certain components of the processing chamber which may actually be consumed by the plasma processes conducted therein and are therefore commonly referred to as "consumables".
  • a plasma clean addresses the above-noted deposits by running an appropriate plasma in the processing chamber typically without any product therein (e.g., no production wafers), and therefore with the chamber being in an "empty" condition.
  • the plasma acts on these deposits in a plasma clean and reduces the thickness thereof by chemical action, mechanical action, or both. Resulting vapors and particulate matter are exhausted from the chamber during the plasma clean. It would be desirable to have a plasma monitoring system which would provide an accurate indication of both the health and endpoint of the plasma clean currently being conducted within the processing chamber.
  • a plasma clean alone will not adequately address the condition of the interior of the processing chamber.
  • Another cleaning technique which may be employed, alone or in combination with a plasma clean is commonly referred to as a "wet clean.”
  • Various types of solvents or the like may be used in a wet clean and are manually applied by personnel. In this regard, the subject processing chamber is depressurized, the chamber is opened to gain appropriate access, and the interior surfaces of the chamber are manually wiped down such that the solvents may remove at least some of the deposits by chemical action, mechanical action, or both.
  • Plasma cleaning operations address the solvent residuals from the wet clean, "prep" the new components of the chamber for plasma processing of product in the chamber, or both It would be desirable to have a plasma monitoring system which would provide an accurate indication of both the health and endpoint of the plasma cleaning operation in this type of case
  • Conditioning wafers may be run through the processing chamber before running production wafers through the processing chamber after any type of cleaning of the processing chamber, after any components of the chamber have been replaced, or in the case of a new chamber which has never had any plasma processes conducted therein
  • An entire plasma processes is typically run on one or more conditioning wafers disposed in the subject processing chamber in a conditioning wafer operation
  • Conditioning wafers may simply be "blanks" or may have some semiconductor device components thereon, and the running of entire plasma processes thereon may do nothing to the conditioning wafers or portions of the conditioning wafer may be etched. Nonetheless, no semiconductor devices are ever formed from a conditioning wafer and no integrated circuit of any kind is ever etched onto a conditioning wafer while running the plasma recipe thereon.
  • conditioning wafers of this type are either refurbished (e.g., material is redeposited back into those areas which were etched during the conditioning wafer operation) and re-used again as a conditioning wafer or they are scrapped.
  • the processing of these conditioning wafers further "preps” or "seasons” the chamber and is done for the purpose of placing the chamber in a certain condition for production. No devices are currently being used to identify when the processing of the conditioning wafers has achieved its intended purpose. Therefore, it would be desirable to have a plasma monitoring system which would provide an accurate indication of when the conditioning wafer operation may be terminated, as well as the health of such an operation.
  • the present invention generally relates to various aspects of a plasma process. These aspects may be grouped into four main categories. One category relates in at least some manner to a calibration or initialization procedure, associated components, or both. The first aspect through the fourth aspect presented below are within this category. Another category relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber (e.g., plasma health evaluations, plasma process/plasma process step identification, plasma "on” determinations). The fifth aspect through the eighth aspect presented below are within this second category.
  • Yet another category associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe).
  • a plasma process e.g., plasma clean, conditioning wafer operation
  • discrete/discernible portion thereof e.g., a plasma step of a multiple step plasma recipe.
  • the ninth aspect through the thirteenth aspect presented below are within this third category
  • the fourth category associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility
  • the fourteenth aspect through the seventeenth aspect presented below are within this fourth category
  • a first aspect of the present invention is embodied in a plasma processing system having calibration capabilities in relation to the monitoring of plasma processing operations
  • the plasma processing system includes a processing chamber having a window with an inner surface which is exposed to plasma processes conducted within the chamber and an outer surface which is isolated from such processes
  • a plasma generator is associated with the plasma processing system to provide the plasma for the plasma processes Any technique and corresponding structure for forming a plasma in the chamber is appropriate for this first aspect of the present invention
  • a first spectrometer assembly e g , one or more spectrometers of any type, such as scanning-type spectrometers and solid state spectrometers
  • a calibration light source is also located outside of the chamber and operatively interconnected with the window through a second fiber optic cable assembly (e g , one or more fiber optic cables)
  • Ends of the first and second fiber optic cable assemblies may be disposed on, but are preferably spaced from
  • calibration involves a comparison between data relating to the calibration light which is sent to the window by the calibration light source (e g , a pattern, intensity, or both, of the corresponding optical emissions) and data relating to a first portion of this same calibration light which is reflected by the inner surface of the window on the processing chamber (e g , a pattern, intensity, or both, of the first portion)
  • the inner surface of the window of the processing chamber is that portion of the window which is typically affected by plasma processes conducted within the chamber Changes on the inner surface of the window may have an effect on any evaluation of a plasma process being conducted within the chamber if such an evaluation is based upon the transmission of optical emissions through the window
  • Information on the window in relation to calibration in accordance with the first aspect of the present invention preferably includes information which is specific to the inner surface of the window on the processing chamber through which optical emissions are obtained That is, calibrations in accordance with this first aspect are preferably in relation to only the inner surface of the window and not the outer surface of the window Steps may be undertaken such that the portion of the calibration light which is reflected by the inner surface of the window is readily available for comparison with the calibration light in the form as it is being sent to the window in another embodiment of the subject first aspect This may be accomplished through appropriately configuring the window For instance, at least a portion of the window, which includes that area where the calibration light impacts the window, may have a generally wedge- shaped configuration (e g , variable window thickness) Another characterization of a window configuration in this embodiment is that at least a portion of the inner and outer surfaces of the window may be disposed in non-parallel relation These types of configurations are particularly useful when the relevant ends of the first and second fiber optic cable assemblies are coaxially disposed or are at least disposed in
  • the end of the second fiber optic cable assembly would be disposed on a first side of this reference plane, displaced therefrom and directed toward the window and at least generally in the direction of the reference plane such that light leaving its end would impact the outer surface of the window at an angle other than perpendicular
  • the end of the first fiber optic cable assembly would be disposed on a second side of this same reference plane (opposite the first side), displaced therefrom, and directed toward the window and at least generally in the direction of the reference plane such that at least a portion of the calibration light which is reflected by the inner surface of the window would be "collected" by the first fiber optic cable assembly for provision to the first spectrometer assembly
  • the thickness of the window will define at least in part the amount by which that portion of the calibration light which is reflected by the inner surface of the window is offset from that portion of the calibration light which is reflected by the outer surface of the window, and thereby the "sensitivity" to the relative positionings between the ends of the first and second fiber optic cable assemblies to collect only light reflected by the inner surface
  • Anti-reflective coatings may also be applied to the outer surface of the window to reduce the effects of that portion of the calibration light which is reflected by the outer surface of the window - that is such that a comparison may be made between the calibration light that is sent to the window with that portion of the calibration light which is reflected by the inner surface of the window
  • a window with parallel inner and outer surfaces could be used with an arrangement whereby the ends of the first and second fiber optic cable assemblies were coaxially disposed and oriented such that reference axes projecting from their respective ends impacted both the inner and outer surfaces in at least substantially perpendicular fashion
  • Application of an anti-reflective coating to the outer surface of the window would reduce the amount of light which is reflected from the outer surface of the window and directed back to the first fiber optic cable assembly for provision to the first spectrometer assembly in this instance
  • Another embodiment of the first aspect of the present invention relates to the use of at least two different types of light by the calibration light source
  • One of these calibration lights may include a plurality of discrete intensity peaks, while the other of these lights may be defined by a continuum of intensity or where there are no discernible peaks (e g , a constant intensity, a continually changing intensity, or a combination of both)
  • one of these calibration lights may be used to identify one type of condition requiring calibration (e g , a wavelength shift associated with the optical emissions data obtained through the window) while the other may be used for another, different type of condition requiring calibration (e g , an intensity shift associated with the optical emissions data obtained through the window, a complete filtering of some part of the optical emissions transmitted through the window)
  • One embodiment of the calibration assembly associated with the second aspect of the present invention calibrates the plasma monitoring assembly for one or more conditions
  • One of these conditions is a wavelength shift which may be experienced in relation to the optical emissions data obtained on the subject plasma process
  • Another of these conditions is an intensity shift which may be experienced in relation to the optical emissions data obtained on the subject plasma process
  • Yet another of these conditions is where certain of the optical emissions, which should be available on the subject plasma process, are being at least substantially completely filtered (e g , blocked out) by the window
  • one of these conditions is where the window is having different effects on different portions of the optical emissions This would be the case where there are differing intensity shifts or multiple dampening effects throughout the optical emissions data being obtained on the subject plasma process
  • the calibration assembly discussed above in relation to the first aspect of the present invention may be used to identify and calibrate the subject plasma monitoring assembly for any of the above-noted types of conditions in relation to the second aspect of the present invention
  • Wavelength shifts may be identified through using a calibration light having a plurality of discrete and displaced (at different wavelengths) intensity peaks Any shifting in the wavelengths at which these peaks appear in the calibration light which is sent to the window (calibration light) in relation to that portion of the calibration light which is reflected by the inner surface of the window (reflected light) would be indicative of a wavelength shift and which could be addressed and more preferably at least substantially alleviated by calibration Intensity shifts may also be identified with this type of light by noting how the intensity of the peaks vary between the calibration light and the reflected light Some peaks in the reflected light may be dampened in relation to the calibration light more than others, which would indicate the existence of multiple dampening effects Peaks which were present in the calibration light but which were absent in the reflected light would indicate that there is filtering
  • intensity shifts, complete filtering, and different dampening effects are identified through using a type of calibration light having a continuum of intensity which provides a more complete picture than the case where a calibration light having discrete intensity peaks is used for any of these purposes That is, little or no information is provided on the "behavior" of the window in relation to those wavelengths which are located between the intensity peaks in the calibration light (i e the effect of the window on the intensity of these wavelengths), and therefore assumptions must be made There is no need for such assumptions in the case of using a calibration light with a continuum of intensity for the above-noted purposes
  • a third aspect of the present invention is directed to monitoring a plasma process through initializing a plasma monitoring assembly
  • the plasma monitoring assembly evaluates at least one aspect of a subject plasma process (e g , one currently being conducted within a processing chamber) by obtaining optical emissions data through a window on the processing chamber
  • Optical emissions which are obtained on the subject plasma process include at least wavelengths from about 250 nanometers to about 1 ,000 nanometers which defines a first wavelength range, and at least at every 1 nanometer throughout this first wavelength range
  • Initialization of the plasma monitoring assembly in a first embodiment of this third aspect includes directing a calibration light toward the window through which optical emissions are obtained reflecting a first portion of the calibration light from the window, and comparing the original calibration light which was sent with this first portion Consequently, any combination of the various features discussed above in relation to calibration in accordance with the first and second aspects may be implemented in this third aspect as well When the comparison of the calibration light with the first portion of the reflected light yields a first result
  • At least one adjustment is made in relation to the plasma monitoring assembly
  • Adjustments which may be made in relation to the plasma monitoring assembly in this first embodiment of this third aspect include physical adjustments to the plasma monitoring assembly
  • the grating, one or more of its mirrors, or both may be moved (e g , pivoted) to calibrate the plasma monitoring assembly
  • Any calibration of the plasma monitoring assembly involving a physical adjustment of the spectrometer assembly in this manner will typically be to address a wavelength shift which is typically due to "drifting" of the spectrometer assembly, although this type of physical adjustment may be used to address wavelength shifts from other sources
  • Another type of adjustment which may be made in relation to the plasma monitoring assembly is a calibration of the optical emissions which are collected or obtained on the subject plasma process, or more typically data which is representative of these optical emissions
  • the "adjustment" may include the implementation of a single calibration factor or multiple calibration factors in the plasma monitoring assembly A single calibration factor is typically utilized when there is a "uniform"
  • Initialization of the plasma monitoring assembly in a second embodiment of this third aspect includes the steps of monitoring the window on the processing chamber through which optical emissions are obtained
  • the second embodiment further includes the step of determining if the window is filtering out optical emissions within a first wavelength region which is contained within the first wavelength range of about 250 nanometers to about 1 ,000 nanometers, which again defines the optical emissions being obtained and made available for evaluation by the plasma monitoring assembly
  • the various features discussed above in relation to the second aspect of the invention in relation to "filtering" may be included in this second embodiment of the third aspect as well
  • the second embodiment of the third aspect includes the step of having the plasma monitoring assembly ignore any optical emissions within any first wavelength region or that reg ⁇ on(s) where filtering has been detected
  • Notification may be provided that a filtering condition has been identified Moreover, a recommendation that the window be replaced may be issued in this situation
  • the monitoring step of the second embodiment of the third aspect may include the step of directing a calibration light toward the window, reflecting a first portion of this calibration light from the window, and comparing the calibration light with this first portion
  • any one or more of the features discussed above in relation to the first and second aspects of the present invention may be utilized by this second embodiment of the third aspect as well
  • the second embodiment may also include the step of making at least one adjustment in relation to the plasma monitoring assembly when certain conditions are identified by the above-noted calibration procedure
  • any one or more of the features discussed above in relation to the first embodiment of this third aspect may also be utilized by this second embodiment of the third aspect of the present invention
  • Initialization of the plasma monitoring assembly in a third embodiment of the above-noted third aspect of the present invention includes the steps of monitoring the window on the processing chamber through which optical emissions on the subject plasma process are obtained
  • the third embodiment further includes the step of determining if the window is having a first effect (e g , dampening) on a first wavelength region which is contained within the first wavelength range of about 250 nanometers to about 1 ,000 nanometers (which defines the optical emissions being obtained and made available for evaluation by the plasma monitoring assembly), as well as a second effect (e g dampening) on a second wavelength region which is also contained within the first wavelength range but outside of the first wavelength region associated with the first effect
  • the various features discussed above in relation to the second aspect of the invention in relation to identifying different dampening effects may be included in this third embodiment of the third aspect as well
  • the third embodiment of the third aspect includes the step of making at least one adjustment in relation to the plasma monitoring assembly if any of these first and second types of effects are identified As such, any one or more of the
  • a fourth aspect of the present invention relates to a method for monitoring a plasma process which includes monitoring a window on the processing chamber in which the plasma process is conducted
  • a quantity of product is loaded into the processing chamber (e g , at least one wafer)
  • the plasma process is thereafter conducted on this product (e g , a plasma recipe)
  • data on the plasma process e g , optical emissions of the plasma in the chamber during the process
  • the plasma process is evaluated based upon both the data which is obtained through the processing chamber window and the monitoring of the window
  • the monitoring of the window more specifically includes the step of monitoring an actual condition of the window
  • the condition of the window in the case of the subject second embodiment is monitored other than through data which is obtained on the plasma process That is, the data which is obtained on the plasma process being conducted within the processing chamber is not utilized in any manner by the step of monitoring the condition of the window in this first embodiment of the fourth aspect of the present invention
  • a second embodiment of the subject fourth aspect characterizes the monitoring of the window in a different manner than as discussed above in relation to the first embodiment
  • the monitoring step of this second embodiment includes the steps of directing a calibration light toward the window, reflecting a first portion of this calibration light from the inner surface of the window, and comparing the calibration light as it was sent to the window with that portion of the calibration light which was reflected by the inner surface of the window
  • one or more of the features presented above in relation to the first and second aspects of the invention may be included in this second embodiment of the fourth aspect as well
  • the types of conditions which may be identified through this monitoring of the processing chamber window are presented above in relation to the second aspect of the present invention and any one or more of these features may be included in this second embodiment of the fourth aspect as well
  • a fifth aspect of the present invention relates to determining when plasma exists or is "on" within a processing chamber based upon machine-based optical analysis (i e , not by a human eye) More specifically, the fifth aspect relates to obtaining optical emissions from within the processing chamber evaluating these optical emissions, generating a plasma in the processing chamber and identifying when plasma exists within the processing chamber through a machine-based evaluation of the optical emissions from within the processing chamber
  • the identification of when plasma exists within the chamber through optical analysis may implement various techniques
  • the time at which the plasma comes on within the chamber may be identified by determining when the optical emissions from within the processing chamber exceeds a certain predetermined output (e g , when the intensity of the optical emissions or a certain portion thereof within the chamber exceeds a certain amount)
  • the identification of when plasma exists through optical analysis may also be directed toward evaluating how the optical emissions change over time For instance, when no plasma exists within the chamber, there will be no corresponding optical emissions being emitted from the chamber Therefore, the identifying step may simply be directed toward noting any change from a "dark" condition to a "light” condition
  • Another way to determine when plasma exists within the chamber through an optical analysis is to determine when the optical emissions from within the chamber include at least a certain number of discrete intensity peaks, each of which has at least a certain intensity
  • the presence of plasma within the chamber may be identified by
  • Another feature which may be incorporated in the subject fifth aspect relates to the processing of a product after the plasma exists within the chamber
  • the window on the chamber may be monitored in accordance with the fourth aspect of the invention discussed above These monitoring operations may be automatically terminated at a time when plasma is first identified within the chamber through the noted optical analysis provided by this fifth aspect
  • plasma processes conducted within the chamber may be monitored by a plasma monitoring assembly Calibration of this plasma monitoring assembly may be made available in accordance with the third aspect of the invention discussed above These calibration operations may be automatically terminated when plasma is identified within the chamber through the noted optical analysis provided by this fifth aspect
  • a sixth aspect of the present invention relates to a plasma spectra directory which contains at least optical emissions data from plasma processes previously conducted within the processing chamber and which are used to evaluate plasma processes subsequently conducted in this very same processing chamber
  • the plasma spectra directory is stored on a computer- readable storage medium and for ease of description includes a first data structure having a plurality of data entries Each of these data entries includes data representative of optical emissions from at least one time during the subject plasma process and this data is associated with one of a first category, a second category, and a third category
  • Virtually any type of plasma process may be included in data entries associated with the first category as long as its optical emissions data provides an indication that the plasma process is proceeding in a certain fashion
  • One or more plasma recipes (run on production wafers, qualification wafers, or both), plasma cleanings (before or after a wet clean), and conditioning wafer operations may each be included in the plasma spectra directory and associated with the first category
  • Multiple "species" of these types of plasma processes may also be included in the plasma spectra directory in association with the first category (e g , different types of plasma recipes)
  • Multiple data entries of the same "spec ⁇ es" may also be included in the plasma spectra directory in association with the first category as well (e g , multiple entries of the same plasma recipe run on the same type of product)
  • the data entries associated with the second category of the subject sixth aspect are those plasma processes (e g , plasma recipes, plasma cleans, conditioning wafer operations) which have been run in the processing chamber and which have encountered at least one error or aberration
  • This error or aberration will typically be represented by a change in the optical emissions of the plasma in the processing chamber, and the cause may be identified by a review of these optical emissions Typically this review is after termination of the subject plasma process
  • Obtaining optical emissions data within the above- noted wavelength range increases the likelihood that optical emissions data which is representative of the error or aberration will in fact be available for inclusion in a data entry which is associated with the second category
  • the entire run in which the error occurred is not included in the data entry associated with the second category Instead only those optical emissions which reflect the existence of the subject error or aberration are typically included in such a data entry This may include optical emissions data from only a single point in time during the subject plasma process or from multiple times Optical emissions included in any data entry associated with the second category may also be of the above-noted wavelength range However, if the error or aberration is only reflected in a certain portion of the optical emissions which are obtained on the subject plasma process, only this portion need be included in the plasma spectra directory for the subject data entry associated with the second category
  • the data entries associated with the third category in relation to the subject sixth aspect are those plasma processes which have been run in the processing chamber and which are "unknown" to the plasma spectra subdirectory That is, the optical emissions from the subject plasma process have failed to correspond with any data entry associated with the first category or with the second category Moreover the reason as to why this is the case has yet to be determined, or more accurately the cause has yet to be associated with a data entry on the computer-readable storage medium Two situations will typically encompass each case where a data entry is recorded in the plasma spectra directory and associated with the third category Plasma processes which have not yet been recorded in the plasma spectra directory and associated with the first category are one such situation In this case, the entirety of the subject plasma process may be recorded in the plasma spectra directory and associated with the third category Once this data entry is identified as being a new plasma process which did or was assumed to have proceeded without substantially any error or aberration, the data entry may be "transferred" from the third category to the first category Plasma processes which have encountered an error which has not been recorded in the plasma
  • a seventh aspect of the present invention relates to various analytical techniques which may be used to evaluate a plasma process in at least some manner
  • a computer-readable storage medium includes a plurality of data entries At least one of these data entries is associated with the type of first category discussed above in relation to the sixth aspect, while at least one of these data entries is associated with the type of second category also discussed above in relation to the sixth aspect
  • the evaluation technique embodied by this first embodiment of the seventh aspect first determines if the subject plasma process corresponds with any data entry associated with the first category Any such correspondence may be used to characterize the subject plasma process as "normal" or the like If the subject plasma process at any time fails to correspond with at least one data entry under the first category, this first embodiment of the seventh aspect will then "search" those data entries under the second category to see if the subject plasma process has encountered a known error or aberration Therefore, data entries under the second category are not searched in each case
  • Various actions may be initiated if the current plasma process corresponds with a data entry associated with the second category, either manually or automatically For instance, the subject plasma process may be terminated, an alert may be issued that an error has been encountered, further use of the processing chamber for processing product may be suspended, adjustment of the plasma process may be undertaken in an attempt to remedy the subject error(s), or any combination thereof
  • a second embodiment of the subject seventh aspect utilizes a computer- readable storage medium which includes a first data entry which is associated with a first category of the type identified above in relation to the sixth aspect
  • This data entry includes a plurality of first data segments from a plurality of different times during one plasma process previously conducted in the processing chamber
  • Each data segment includes optical emissions of the plasma in the chamber for wavelengths of at least about 250 nanometers to about 1 ,000 nanometers which defines a first wavelength range, and at least at every 1 nanometer throughout this first wavelength range
  • This second embodiment entails obtaining current optical emissions from another plasma process run in this same processing chamber which are also within the first wavelength range and at least at every 1 nanometer throughout this first wavelength range.
  • a comparison is undertaken between the current optical emissions and those associated with at least one first data segment of the first data entry throughout the first wavelength range and at least at every 1 nanometer throughout the first wavelength range.
  • the second plasma process is evaluated based upon at least a portion of the optical emissions data from the second plasma process.
  • this may not be practical, desirable, or necessary.
  • the progress of the second plasma process in relation to the first plasma process recorded in the first data entry on the computer-readable storage medium may be based upon an evaluation of at least a 50 nanometer bandwidth and at least every 1 nanometer throughout this smaller bandwidth.
  • a smaller wavelength region may be selected for evaluating the second plasma process in relation to the first plasma process in a variety of manners.
  • the particular wavelength(s) at which error(s) have been previously encountered in running this same plasma process may be used to select that portion of the first wavelength range which should be used in the subject evaluation (e.g., ⁇ 25 nanometers of each wavelength which is indicative of an error or aberration).
  • a wavelength region may be selected which includes each of the errors previously encountered on the same type of plasma process.
  • the "width" of the region may be defined by the two extreme wavelengths, although it would be preferred to include a "buffer" of sorts on each of these ends (e.g., expand the range by 25 nanometers on each end).
  • the particular wavelength(s) which is indicative of the endpoint of the subject plasma process or discrete/discernible portion thereof may be used to select that portion of the first wavelength range which should be used in the subject evaluation ( ⁇ 25 nanometers of each such wavelength).
  • Individual endpoint indicator wavelengths are discussed in more detail below in relation to the ninth aspect of the present invention.
  • An eighth aspect of the present invention relates to identifying the type of plasma process conducted within the processing chamber. This aspect may be used to identify whether a plasma process is a certain type of plasma recipe being run on a certain type of production wafer, a certain type of plasma recipe being run on a certain type of qualification wafer, a certain type of plasma recipe being run on a certain type of conditioning wafer, or a plasma clean being run in a chamber.
  • a first embodiment of this eighth aspect is able to identify the particular type of a plasma recipe being run on product (e.g., production wafer, qualification wafer) in a processing chamber based upon the storage of at least two plasma recipes on a computer-readable storage medium.
  • the computer-readable storage medium includes a plurality of data entries.
  • a first of these data entries includes relevant data from a plurality of times during a first plasma recipe run on product in the processing chamber (and preferably of the entirety of this first plasma recipe at least after stabilization of the plasma).
  • a second of these data entries includes relevant data from a plurality of times during a second plasma recipe (different from the first plasma recipe) run on product in the same processing chamber (and preferably of the entirety of this second plasma recipe at least after stabilization of the plasma).
  • Data on a subject plasma recipe which is being run on product in the same processing chamber is obtained. This data is used to determine if the current plasma recipe is of the same type as the first or second plasma recipe stored on the computer- readable storage medium.
  • this determination is completed prior to termination of the current plasma recipe and at least before the next product is loaded into the chamber
  • This first embodiment of the eighth aspect may be used to determine not only the identity of the subject plasma process, but the type of product (e g , whether a production wafer or a qualification wafer) that is being processed by including relevant data from prior plasma processes on the computer-readable storage medium That is, by including a plasma recipe "A" run on a certain type of production wafer in one data entry and the same plasma recipe "A" on a certain type of qualification wafer in another data entry, the ability exists to determine if the current plasma recipe is being run on a production versus a qualification wafer
  • the data obtained on the current plasma process may be optical emissions of the plasma in the processing chamber
  • These optical emissions may include at least wavelengths from about 250 nanometers to about 1 ,000 nanometers (inclusive) which defines a first wavelength range, and optical emissions may be obtained at least at every 1 nanometer throughout this first wavelength range
  • Optical emissions of the subject plasma process may be compared with one or both of the first and second plasma recipes stored on the computer-readable storage medium to see if there is sufficient correspondence therebetween
  • the techniques discussed above in relation to the seventh aspect may be implemented in this first embodiment of the eighth aspect as well
  • a second embodiment of the subject eighth aspect is directed toward inputting the plasma recipe to be run in the chamber and using the principles discussed above in relation to the first embodiment of the eighth aspect to verify that no errors were made when inputting the subject plasma recipe That is, the identify of the subject plasma process is determined in accordance
  • a third embodiment of the subject eighth aspect is directed to identifying a subject plasma recipe based upon at least two plasma recipes which are stored on a computer-readable storage medium and which were previously run in the same processing chamber
  • the first execution of the subject plasma recipe is initiated and is of the type associated with either the first or second plasma recipe
  • At least one characteristic of the plasma is monitored during the execution of each subject plasma recipe
  • Both the first and second plasma recipes are available for comparison against the first execution of the subject plasma recipe
  • subsequent executions of the subject plasma recipes are evaluated at least initially only in relation to the identified plasma recipe on the computer-readable storage medium
  • This embodiment is particularly pertinent to the case where the first wafer of a cassette or boat of wafers is evaluated in accordance with the foregoing since the same plasma recipe is typically run on the entire cassette Therefore, once the third embodiment of the eighth aspect determines the identify of the plasma recipe being run on the first wafer, all subsequent wafers in the cassette are at least initially evaluated against only
  • a ninth aspect of the present invention relates to engaging in research to identify one or more indicators of a first endpoint which is when the plasma process (e g , plasma recipe, plasma clean, conditioning wafer operation) or portion thereof (e g , plasma step of a plasma recipe) has achieved a first predetermined result (e g , the etching away of a certain layer from a multi-layer structure such as a wafer)
  • a first plasma process is run in the processing chamber
  • Optical emissions of the plasma are obtained at a plurality of times during this first plasma process
  • These optical emissions include at least wavelengths from about 250 nanometers to about 1 ,000 nanometers (inclusive) which defines a first wavelength range
  • Optical emissions are preferably obtained at least at every 1 nanometer throughout this first wavelength range
  • These optical emissions are evaluated or analyzed and at least one endpoint indicator is selected based upon this analysis
  • a comparison of the plots between two or more runs may identify a pattern which stays the same, but which undergoes some type of change
  • This change may be a temporal shift, a shift in the intensity associated with the pattern, a uniform enlargement of the pattern, a uniform reduction in the pattern, or any combination thereof
  • Patterns which undergo this type of change are an indicator that the corresponding wavelength is in fact indicative of the first endpoint
  • One "controlled" way of inducing such a shift is to process two or more products having different thicknesses
  • the analysis used to select at least one indicator of the first endpoint may also include examining the optical emissions to identify the existence of intensity peaks, and determining if any of these
  • a tenth aspect of the present invention relates to monitoring at least two aspects of a plasma process, one of which may be the "health" of the plasma process and another of which may be at least one endpoint associated with the plasma process
  • This tenth aspect is applicable to any plasma process, including plasma recipes which are run on product (e g , production wafers, qualification wafers) in a processing chamber, plasma cleanings (e g , with or without a wet clean), and conditioning wafer operations
  • substantially the entirety of the plasma process may be evaluated in relation to its "health" except possibly the initial portion of the plasma process where the plasma is typically unstable
  • the evaluation of the plasma process in relation to identifying an endpoint need not be initiated until closer to the time at which the subject endpoint should be reached
  • the frequency at which the plasma health is evaluated need not be the same as the frequency at which the evaluation is undertaken to identify the subject endpoint
  • the plasma health may be assessed less frequently than the evaluation relating to identifying the subject endpoint
  • An eleventh aspect of the present invention generally relates to monitoring a plasma process to identify an occurrence of a first endpoint associated with the plasma process. More specifically, at least two different techniques are used to evaluate the current plasma process to identify the first endpoint in this eleventh aspect. Endpoint may be called when only one of these techniques identifies the occurrence of the first endpoint, or may be called after each of these techniques identifies the occurrence of the first endpoint.
  • This eleventh aspect of the present invention is applicable to any plasma process having at least one endpoint associated therewith (e.g., plasma recipes which are run on product in a processing chamber, plasma cleanings, and conditioning wafer operations).
  • One of the techniques which may be used in the subject eleventh aspect involves a comparison of the current optical emissions of the plasma in the chamber with optical emissions of the plasma in the chamber from a previous time in the same process, preferably the immediately preceding time at which optical emissions were obtained.
  • these optical emissions include at least wavelengths from about 250 nanometers to about 1 ,000 nanometers at least at about every 1 nanometer.
  • endpoint may be deemed to have been reached. Stated another way, when there is no longer any substantial change in the optical emissions, endpoint may be deemed to have been reached.
  • Yet another technique which may be used in the subject eleventh aspect of the present invention includes determining if there is at least a first change in the impedance of the processing chamber which is reflected in the optical emissions of the plasma in the processing chamber
  • a "modal" change in the plasma may be indicative of a change in impedance which in turn is indicative of endpoint
  • This "modal" change may be a rather sudden and significant increase or decrease in the intensity of the entirety of the plasma or of a particular wavelength(s)
  • Another technique which may be used to identify endpoint in relation to the subject eleventh aspect includes evaluating at least one individual wavelength of light forming the plasma of the subject plasma process This one wavelength of light may be evaluated to determine when a plot of intensity versus time deviates by more than a predetermined amount from a predetermined equation (e g , when there is no longer a "fit" between the current data and the subject equation) Therefore, the features discussed above in relation to the ninth aspect of the present invention are also relevant to this portion of the eleventh aspect as well Moreover, any one or more individual wavelengths of light may be evaluated to determine when the change in slope over time of the wavelength(s) changes by more than a predetermined amount Second order derivatives may be used as well
  • a twelfth aspect of the present invention is directed toward a technique for identifying the occurrence of a first endpoint associated with a plasma process (e g , plasma recipe, plasma clean, conditioning wafer operation) or a discrete/discernible portion thereof (e g , a plasma step of a multiple step recipe or process)
  • Optical emissions of the plasma in the chamber from the process are obtained These optical emissions include at least wavelengths from about 250 nanometers to about 1 ,000 nanometers which defines a first wavelength range
  • the data resolution which is used in collecting the optical emissions is no more than about 1 nanometer This means that optical emissions are obtained at least at every 1 nanometer throughout the first wavelength range
  • Identification of the first endpoint involves a comparison of the most current optical emissions of the plasma in the chamber with a first output
  • This first output may be optical emissions of the plasma in the chamber from a previous time in the same plasma process, preferably the immediately preceding time at which the optical emissions were obtained in relation to the now current optical emissions
  • This first output may also
  • Confidence in the calling of the first endpoint by the above-noted technique may be enhanced by using a second technique and not calling the first endpoint until both of the techniques have "seen” the first endpoint
  • Appropriate actions include terminating the current plasma process, issuing an alert, suspending execution of any further plasma processes in the chamber until it is appropriately cleaned, or any combination thereof
  • Appropriate actions include terminating the current plasma process, issuing an alert, suspending execution of any further plasma processes in the chamber until it is appropriately cleaned, or any combination thereof
  • Various features may be utilized by the fourteenth aspect of the present invention, and these features may be used alone in relation to this fourteenth aspect as well as in any combination
  • the data which is obtained on the current plasma process may be optical emissions of the plasma in the chamber Wavelengths obtained may include at least from about 250 nanometers to about 1 ,000 nanometers which defines a first wavelength range Data may be obtained at least at every 1 nanometer throughout the noted first wavelength range
  • Predetermined amount contemplates using pattern recognition techniques, as well as taking a differential and noting when this differential is at least substantially free from any substantial intensity peaks
  • the first embodiment of the fifteenth aspect of the present invention includes comparing the pattern of a specific wavelength(s) within the optical emissions of the plasma with the first standard pattern which will include the corresponding wavelength(s) Moreover, the first embodiment also includes comparing the pattern of the entirety of the optical emissions obtained on the current plasma process with the first standard pattern
  • the differential between the optical emissions at a current time in the process and the optical emissions from a previous time in the same plasma process is determined
  • this differential is no more than a first amount, the current plasma process is terminated Therefore, this second embodiment equates the time at which the plasma clean should be terminated with a situation where the current plasma process is no longer changing the condition of the interior of the processing chamber at a desired rate All or a portion of those
  • Conditioning wafer operations are addressed in a sixteenth aspect of the present invention
  • At least one conditioning wafer is loaded in a processing chamber and a plasma process is run thereon
  • the plasma process will etch a pattern on the conditioning wafer which is something other than an integrated circuit or a pattern which would not be associated with a semiconductor device
  • Plasma processing of the conditioning wafer is monitored through obtaining optical emissions of the plasma in the chamber
  • a number of conditioning wafers are processed in this manner until the conditioning wafer operation is terminated based upon the results of the monitoring of one of the plasma processes conducted on a conditioning wafer
  • a production wafer operation is initiated whereby at least one production wafer is loaded in the chamber and a plasma recipe (e g , one or more plasma steps) is run thereon
  • a plasma recipe e g , one or more plasma steps
  • Termination of the conditioning wafer operation may also be based upon when consecutive runnings of the plasma process on conditioning wafers are within a certain amount of each other as determined through the data obtained on the process That is, the termination of the conditioning wafer operation may be equated with the conditioning wafer operation having reached a steady state (e g , the processing of one conditioning wafer looks at least effectively the same as the processing of the next conditioning wafer) determined in accordance with an evaluation of optical emissions data Termination of the conditioning wafer operation may also be based solely on the data obtained on the conditioning wafer operation That is, no wafer need be analyzed before the production wafer operation is initiated
  • One or more of a plasma cleaning operation, a wet cleaning operation, or a replacement of consumables may also be initiated before the initiation of the conditioning wafer operation as well
  • At least two chambers are involved in the plasma processing of wafers disposed therein Each plasma process conducted within these chambers is monitored in at least some respect Wafers will continue to be sequentially processed in these chambers unless the monitoring of the current plasma process on the wafer(s) in one of these chambers detects the existence of one or more conditions
  • These conditions include the existence of a "dirty chamber", a known error condition, an unknown condition, or a combination thereof as these terms have been used in relation to the sixth and fourteenth aspects discussed above
  • the distribution of wafers to this particular chamber may be suspended immediately after this type of condition is identified, or suspension may be delayed until a certain number of these types of conditions are encountered in multiple plasma processes That is, a given chamber may not be taken "off line” until this same condition (or another of the conditions) have been identified in multiple runs
  • the chamber may be cleaned in some manner Plasma cleans, wet cleans, replacement of consumables, or any combination thereof are contemplated as an appropriate "cleaning' in the context of this first embodiment of the seventeenth aspect
  • the distribution of wafers for running plasma processes thereon may be reinitiated Encountering a known error during the plasma processing of a wafer(s) in one of the chambers may result in the modification of one or more process control parameters to address this error
  • the first embodiment contemplates analyzing the plasma process after termination thereof in an attempt to identify the corresponding cause
  • a second embodiment of the seventeenth aspect relates to the running of plasma processes on product in at least three chambers
  • the wafers are distributed to these chambers using a first sequence Modification of this sequence is initiated if the monitoring of the plasma process in one of the chambers identifies the existence of a certain condition Any of those identified above in relation to the first embodiment would be applicable to this second embodiment as well In this regard the corresponding features from the first embodiment may be implemented in this second embodiment as well
  • a third embodiment of this seventeenth aspect involves the distribution of wafers to at least two processing chambers for the running of a plasma process thereon The time required to complete each plasma process is monitored The distribution sequence which is utilized is based upon this monitoring of time For instance, the distribution sequence may involve maximizing the use of the "fastest" processing chamber
  • An eighteenth aspect of the present invention relates to a virtual optical filter of sorts for use in monitoring plasma processing operations
  • Optical emissions data throughout a first wavelength region e g , a range of wavelengths extending from a first wavelength to a second wavelength, the distance between which defines a bandwidth
  • a second wavelength region is selected for monitoring at least one aspect of the first plasma process
  • This second wavelength region is a subset of the first wavelength region (i e has a smaller bandwidth) That is the second wavelength region is totally contained within, but is smaller than, the first wavelength region Therefore, only a portion of the optical emissions data which is being collected on a given plasma process is used to evaluate this process in at least some manner in accordance with the subject eighteenth aspect
  • Monitoring one portion of a plasma process may require optical emissions data within one wavelength region or at one specific wavelength, while monitoring another portion of the same plasma process may require optical emissions data within a different wavelength region or at a different wavelength Similarly, monitoring one type of plasma process may require optical emissions data within a certain wavelength region or at a certain wavelength while monitoring a different type of plasma process may require optical emissions data within a different wavelength region or at a different wavelength
  • a significant benefit of the subject eighteenth aspect is that so long as the desired optical emissions for monitoring a given plasma process or a portion thereof are within the first wavelength region of the optical emissions data which is being collected no physical adjustments will be needed to accommodate any of these scenarios
  • the eighteenth aspect avoids the situation where one bandpass filter is required to monitor one type of plasma process and where another bandpass filter is required to monitor another type of plasma process
  • the optical emissions data over the first wavelength region may be stored on a computer-readable storage medium in a database or otherwise cataloged such that a plasma monitor (e g , plasma health module, endpoint detection module) may seiectably retrieve which particular subset of the first wavelength region (e g , a specific wavelength or a wavelength region) is desired for use by the plasma monitor That is, each wavelength may be assigned some type of identifier such that all that is required to retrieve the optical emissions data on this wavelength is to input the corresponding identifier to the requisite plasma monitoring module In order to retrieve optical emissions data on a plasma monitor (e g , plasma health module, endpoint detection module) may seiectably retrieve which particular subset of the first wavelength region (e g , a specific wavelength or a wavelength region) is desired for use by the plasma monitor That is, each wavelength may be assigned some type of
  • One aspect of any plasma process which may be monitored through the subject eighteenth aspect is to identify an occurrence of at least one endpoint which is associated with a plasma process being run in a processing chamber "Endpoint" is defined as when the plasma process has realized or affected a certain, predetermined result (e g , the removal of a certain layer)
  • the occurrence of an endpoint may be monitored by monitoring one or more individual wavelengths which are each contained in the first wavelength region, by monitoring one or more wavelength regions which are each contained within the first wavelength region but which need not have the same bandwidth, or any combination thereof
  • Another aspect of a plasma process which may be monitored through the eighteenth aspect is to determine if a plasma process currently being run in a processing chamber is proceeding in accordance with at least one plasma process which was previously conducted within the very same processing chamber Although this may be done by comparing optical emissions data over the entire first wavelength region, this may be done through the eighteenth aspect and its use of a smaller wavelength region for monitoring purposes
  • the second wavelength region may have a bandwidth of at least
  • wavelengths or wavelength regions may be used to monitor the plasma process in accordance with the subject eighteenth aspect, and again without making any physical change to the plasma monitoring system so long as each of these wavelengths or wavelength regions are in the first wavelength region where optical emissions data is being collected on the current plasma process
  • one wavelength region within the first wavelength region may be monitored for a first endpoint of a first step of a certain plasma process
  • another/different wavelength region within the first wavelength region may be monitored for a second endpoint of a second step of the same plasma process This may be done for each step of the plasma process
  • Another possibility is to monitor for at least one endpoint associated with the current plasma process and at the same time to also monitor the health of the plasma process by comparing optical emissions data from a wavelength region having at least a 50 nanometer bandwidth, with optical emissions data of this same wavelength region from a plasma process previously conducted in the same processing chamber
  • a nineteenth aspect of the present invention relates to identifying a wavelength region which would be appropriate for monitoring a plasma process for the occurrence of a certain endpoint of the plasma
  • the nineteenth aspect will be described in relation to selecting a first wavelength region which has a first bandwidth, and which may be used to identify a first endpoint associated with a first plasma process
  • Optical emissions data throughout a second wavelength region having a second bandwidth are obtained on the first plasma process
  • the second wavelength region includes at least wavelengths within the range from about 250 nanometers to about 1 ,000 nanometers and at least at every 1 nanometer throughout this wavelength range
  • these optical emissions are obtained on the plasma process at least at every 1 second during most if not all of the first plasma process
  • a third wavelength bandwidth is selected which is less than the second bandwidth of the second wavelength region which again defines the particular optical emissions data which are to be collected on the first plasma process
  • Optical emissions data are collected on the first plasma process over a second wavelength which includes at least wavelengths from about 250 nanometers to about 1 ,000 nanometers
  • the third bandwidth may be selected as 5 nanometers
  • Each wavelength region having this 5 nanometer bandwidth and plotted for purposes of identifying an appropriate endpoint indicator wavelength region may be referred to as an endpoint evaluation wavelength region
  • the number and relationship between the various endpoint evaluation wavelength regions may be selected to cover at least most, and more preferably the entirety of, the second wavelength region over which optical emissions data are being collected on the first plasma process
  • the endpoint evaluation wavelength regions may be disposed in overlapping relation or may be disposed in end-to-end fashion
  • the first endpoint evaluation wavelength region may be from 250-
  • the second endpoint evaluation wavelength region may be from 255-260 nanometers
  • the third endpoint evaluation wavelength region may be from 260-265 nanometers, and so forth up to the 995-1 ,000 endpoint evaluation wavelength region in the subject example
  • the first wavelength region for calling the first endpoint may be selected as the first wavelength region for calling the first endpoint.
  • the first wavelength region for calling the first endpoint may be selected to encompass each of these endpoint evaluation wavelength regions For instance, if the plot of the 275-280 wavelength region, the plot of the 285-290 wavelength region, and the plot of the 300-305 wavelength region had the requisite identifiable or significant event, the first wavelength region could be defined as the 275-305 nanometer wavelength region
  • no two adjacentmost endpoint evaluation wavelength regions are combined to define a particular first wavelength region if there is more than about a 15 nano
  • the twentieth aspect may be used to conduct various experiments of sorts as to how making a certain change or combination of changes in the plasma monitoring system a particular plasma monitoring technique, or both would effect the results achieved by or the performance associated with the monitoring of plasma processes
  • the subject "monitoring” may be for plasma health, endpoint, or both
  • the twentieth aspect is implemented on a remote system which is interconnected with the plasma monitoring system in at least some way and which replicates or mimics at least portions of the plasma monitoring system so that these experiments of sorts may be conducted "off-line” so as to not affect production
  • a twenty-first aspect of the present invention is a plasma monitoring network of sorts
  • a first embodiment of this twenty-first aspect is a plasma processing system which includes a plurality of chamber clusters Each chamber cluster includes at these one plasma processing chamber and at least one plasma monitoring system which is interconnected with at least one of the processing chambers of the particular chamber cluster There may be a single plasma monitoring system for the entire chamber cluster, each chamber may have its own plasma monitoring system, or a single plasma monitoring system may service a plurality of processing chambers within a given chamber cluster but not all of such processing chambers
  • a master remote station is operatively interconnected with the plasma monitoring system(s) of each chamber cluster
  • This master remote station is disposed outside of the clean room system and includes a display (e g , computer monitor) and data entry device (e g , keyboard)
  • each chamber cluster remote station is disposed outside of the clean room system and includes a display (e g , computer monitor) and data entry device (e g , keyboard)
  • a given chamber cluster remote station is operatively interconnected only with the plasma monitoring system(s) of its associated chamber cluster, and thereby not the plasma monitoring system(s) of any other chamber cluster
  • the master remote station may have greater access rights to a given plasma monitoring system of a given chamber cluster than the chamber cluster remote station for this same given chamber cluster
  • multiple modules may be associated with each of the plasma monitoring systems
  • the master remote station may have access to a greater number of modules on a per plasma monitoring system basis than the corresponding chamber cluster remote station (i e , the chamber cluster remote station which interfaces with the plasma monitoring system(s) of a single chamber cluster)
  • Examples of the above-noted modules include a data player module, a statistical analyzer module, a control module, and a data review module
  • the data player module may have the characteristics discussed above in relation to the twentieth aspect of the present invention
  • the statistical analyzer module may be configured to undertake various types of statistical analysis For instance the performance of a single processing chamber could be statistically analyzed against itself (e g , performance variations over time) Moreover the performance of one processing chamber could
  • the present invention will now be described in relation to the accompanying drawings which assist in illustrating its various pertinent features
  • One application of the present invention is for processes which utilize plasma to provide at least one function or to achieve at least one predetermined result, and the present invention will hereafter be described in this context More specifically, the present invention will be described in relation to the running of plasma processes on wafers or the like from which semiconductor devices are formed (e g , etching where the "predetermined result” may be the removal of one or more layers, chemical vapor deposition where the predetermined result may be the buildup of one or more films, sputtering where the predetermined result may be the addition or removal of material)
  • Figure 1 is a schematic view of a wafer production system
  • Figures 3A-B are top and side views, respectively, of one embodiment of the wafer handling assembly incorporated in the wafer production system of Figure 1 ,
  • Figure 4 is a cross-sectional view of one embodiment of a plasma processing chamber which may be incorporated in the wafer production system of Figure 1 namely a dry etching chamber,
  • FIG. 7 is a flowchart of one embodiment of the plasma monitoring module used by the plasma monitoring assembly of Figure 6,
  • Figure 8 is a spectral pattern of one embodiment of a plasma recipe which may be run on the system of Figure 1 ,
  • FIG. 9 is a flowchart of one embodiment of a plasma spectra directory and its various subdirectories which may be used in plasma monitoring operations,
  • Figure 10 is a flowchart of one embodiment of a general data management structure which may be utilized for the various subdirectories of the plasma spectra directory of Figure 9,
  • Figure 11 is a flowchart of one embodiment of how data within the general data management structure of Figure 10 may be condensed/consolidated
  • Figure 12B is one embodiment of a data management structure which may be used for the abnormal spectra and unknown spectra subdirectories of Figure 9,
  • Figure 13 is a flowchart of one embodiment of a pattern recognition module which may be used by the current plasma process module of Figures 7 and 32 in the evaluation of a plasma process being run in the processing chamber of Figure 1
  • Figure 14 is a flowchart of one embodiment of a process alert module which may be used by the current plasma process module of Figures 7 and 32 in the evaluation of a plasma process being run in the processing chamber of Figure 1
  • a pattern recognition module which may be used by the current plasma process module of Figures 7 and 32 in the evaluation of a plasma process being run in the processing chamber of Figure 1
  • Figure 14 is a flowchart of one embodiment of a process alert module which may be used by the current plasma process module of Figures 7 and 32 in the evaluation of a plasma process being run in the processing chamber of Figure 1
  • Figures 17A-C are exemplary spectra of one type of plasma process that may be run in any of the processing chambers of Figure 1 and monitored by the current plasma process module, namely a three-step plasma recipe,
  • Figures 18A-C are exemplary spectra of another type of plasma process that may be run in any of the processing chambers of Figure 1 and monitored by the current plasma process module, namely a plasma cleaning operation without first wet cleaning the chamber at the start, at an intermediate time, and end of such a plasma cleaning operation, respectively,
  • Figure 24 is a flowchart of another embodiment of a plasma health/process recognition subroutine which may be used by the plasma health module of Figures 7 and 32
  • Figure 25 is a flowchart of one embodiment of a plasma health/process step recognition subroutine which may be used by the plasma health module of Figures 7 and 32
  • Figure 44 is a cutaway view of another embodiment of a spectrometer which may be used by the spectrometer assembly of Figure 31 and which is operatively interfaced with the calibration module of Figure 40,
  • Figure 53 is a flowchart of another embodiment of an endpoint detection subroutine which may be used by the endpoint detection module of Figures 7 and 32,
  • Figure 56C is the difference between the spectra of Figures 55A and 55B in accordance with the endpoint detection subroutine of Figure 53,
  • the wafer cassette 6 includes a frame 10 defined by a pair of laterally spaced sidewalls 22 which are interconnected by a back panel 26, as well as a pair of end panels 8
  • the front of the frame 10 is substantially open such that the wafer handling assembly 44 may be advanced within and retracted from the wafer cassette 6 to remove wafers 18 from and provide wafers 18 to the associated wafer cassette 6
  • a plurality of longitudinally spaced and laterally disposed partitions 16 (e g , each partition 16 being disposed at least generally perpendicular to the longitudinal axis of the cassette 6) are provided within the frame 10 for purposes of maintaining separation of adjacent wafers 18
  • Each pair of adjacent partitions 16 defines a pocket 14 in which a single wafer 18 may be placed
  • Loading of wafers 18 within the wafer cassette 6 which are to be plasma processed may be accomplished by disposing the one of the end panels 8 of the cassette 6 on an appropriate supporting surface and manually loading wafers 18 into the cassette 6, with only one wafer 18 being disposed in any
  • a bell jar 90 and a bell roof 86 which are each formed from transparent, dielectric materials (e g , quartz, sapphire)
  • the bell jar 90 is spaced radially inward (e g , in the direction of the central, longitudinal axis 76 of the chamber 74) from the inner surface of the chamber sidewalls 78
  • the bell roof 86 is disposed above the bell jar 90 and is axially movable in a direction which is at least substantially parallel with the central, longitudinal axis 76 of the chamber 74 through interconnection with an elevator 98 Movement of the elevator 98 may be desirable for one or more purposes For instance, this movement may be used to change the spacing between a showerhead 94 and a wafer pedestal 106/wafer platform 102 which in one embodiment are the electrodes or "plasma generator" for the chamber 74
  • the PMCU 128 includes a plasma monitoring module 200 and each of its sub-modules may be stored on a computer-readable storage medium associated with the PMCU 128 (e g , on a portable computer d ⁇ skette(s), on a hard drive, on a CD(s))
  • the plasma monitoring module 200 and these sub-modules are illustrated in Figure 7
  • One sub-module is a startup module 202 which provides a way of accessing other sub-modules through a current plasma process module 250
  • the current plasma process module 250 of the plasma monitoring module 200 facilitates the monitoring or evaluation of the various types of plasma processes which may be conducted within the chamber 36 through the evaluation of optical emissions data of the plasma in the chamber 36
  • optical emissions data are collected and delivered by the fiber optic cable 178 to the spectrometer assembly 182 which divides the light up into its individual optical components Data representative of these optical emission components are then made available to the current plasma process module 250 through the CCD array 186 as described above
  • Spectral data from a plasma process ABC conducted in a given chamber 36 may be recorded in the normal spectra subdirectory 288 one day simply for purposes of determining if any subsequent running of this same plasma process ABC in this same chamber 36 has proceeded in accordance with the spectral data from the plasma process ABC previously recorded in the normal spectra subdirectory 288
  • Spectra of "Abnormal” Plasma Processes and identified by reference numeral 292 (hereafter “abnormal spectra subdirectory 292")
  • Data relating to any of the plasma processes referenced above in relation to the normal spectra subdirectory 288 may also be stored in the abnormal spectra subdirectory 292, and the above-noted organizational techniques may be utilized here as well
  • Entries to the abnormal spectra subdirectory 292 are made when a given plasma process conducted in the processing chamber 36 does not proceed in the desired or predetermined manner (e g , when the process has not proceeded according to the relevant plasma process(es) of the normal spectra subdirectory 288), and further when the cause or causes of the error or aberration has been identified to the plasma spectra directory 284
  • Spectral data recorded in the unknown spectra subdirectory 296 from prior plasma processes will typically be analyzed by personnel at some point in time after the process has been terminated If the spectral data from a plasma process recorded in the unknown spectra subdirectory 296 is identified as being a new plasma process, and if a determination is made to use this spectral data as a standard for evaluating further runnings of this same plasma process on this same processing chamber 36 this spectral data may be transferred to the normal spectra subdirectory 292 Entries may also be made to the abnormal spectra subdirectory 292 from the unknown spectra subdirectory 296 Analysis of the spectral data from a particular plasma process which is recorded in the unknown spectra subdirectory 296 may lead to the conclusion that the spectral data is associated with one or more particular errors/aberrations which is identifiable by its spectral data The relevant spectral data from the unknown spectra subdirectory 296 may then be transferred to the abnormal spectra subdirectory 292
  • Spectra for the data segments 354 are taken periodically throughout the running of a plasma process within the processing chamber 36 through the window 38 on the chamber 36 (e.g., by the plasma monitoring assembly 174 of Figure 6 or any of the embodiments illustrated in Figures 31 and 37 below) using the Preferred Data Collection Time Resolution.
  • Entries of plasma processes in the normal spectra subdirectory 288 may consist of a plurality of totally different types or species of plasma processes within a given category or genus as also illustrated in Figure 10.
  • Plasma recipe A is stored under main data entry 350a, which is different from a plasma recipe B which is stored under main data entry 350b, which is different from a plasma recipe "X" which is stored under main data entry 350c.
  • Multiple runnings of the same plasma recipe or process may also be recorded in the normal spectra subdirectory 288 as well if desired (not shown). For instance, spectral data from two separate runnings of plasma recipe A on the same type of product in the associated processing chamber 36 may actually be included in the normal spectra subdirectory 288. Evaluation of a current plasma recipe being run on product in the subject processing chamber 36 would then potentially involve the comparison of optical emissions data on the current process in relation to both of these main data entries 350.
  • Each data segment 354 of each plasma process stored under a mam data entry 350 in the normal spectra subdirectory 288 of Figure 10 may contain a multiplicity of data types relevant to the monitoring of the current plasma process with the current plasma process module 250
  • a representative example is presented in Figure 12A where these various data types of data are presented in data fields 322 which are associated with each data segment 354
  • Spectral patterns of the plasma in the processing chamber 36 is a significant data type for comparing the current plasma process with the plasma spectra directory 284, and these spectra are stored in a spectra field 322d in the normal spectra subdirectory 288 of Figure 12A
  • Each data segment 354 in the normal spectra subdirectory 288 also includes a time field 322a where the time associated with the spectra in the spectra field 322d is recorded (e g , the time into the plasma process when the spectra is taken) Data in the time field 322a may be used in various ways by the current plasma process module 250 as will be discussed in more detail
  • the current plasma process module 250 includes error identification capabilities as will be discussed in more detail below Once the current plasma process module 250 identifies a match between the current optical emissions data and a relevant spectra or portion thereof in the abnormal spectra subdirectory 292, information on the corresponding error/aberration may be issued based upon information in the error field 338c Moreover, corrective actions may be undertaken based upon the contents of this same error field
  • spectral data should be taken at least every 1 second and the analysis of this data should be completed by the pattern recognition subroutine 374 as fast as possible
  • the identification of the current plasma recipe and the analysis of the performance of the processing chamber 36 e g , plasma health
  • the pattern recognition subroutine 374 of Figure 13 is able to meet the demands through simplifying the analysis of the spectra of the plasma in the processing chamber 36
  • the sum total of the analysis provided by the pattern recognition subroutine 374 is simply whether the pattern of the current spectra "matches" the pattern of the relevant spectra from the Target Directory There is no need to locate or
  • Process Alert Module 428 - Figure 14 Various conditions which may be encountered by the current plasma process module 250 may result in the transfer of control to or the sharing of control with the process alert module 428 of Figure 14
  • One or more subroutines may be included under the process alert module 428
  • Each of these subroutines may present various options in relation to how the relevant condition or situation is addressed which resulted in the activation of the process alert module 428
  • actions are made available - the issuing of one or more alerts and addressing the control of the subject plasma process in some manner
  • step 450e may access a protocol of step 450e which relates to a wet clean which may be initiated in accordance with the foregoing Spectra or conditions within the chamber 36 which are of a nature such that the wafer distribution sequence should be affected in some manner by their existence may be included in or associated with step 448c
  • the protocol set forth in step 450c thereby addresses the manner in which wafers 18 are distributed to the various processing chambers 36 of the wafer production system 2 through the wafer distribution module 1384 which will be discussed in more detail below in relation to Figures 59-60 Addressing the sequence of distribution of wafers 18 to the processing chambers 36 of the wafer production system 2 may be automatically undertaken if desired by the facility incorporating the wafer production system 2 through operatively interfacing the process alert subroutine 432 with the appropriate process controller(s) (e g , wafer distribution module 1384, MCU 58) Manual techniques are also contemplated by step 450c in that the execution of step 450c of the process alert subroutine 432 may simply
  • the startup subroutine 204 proceeds to step 228 where at least spectral data of the current plasma process is recorded in the normal spectra subdirectory 288 Preferably this encompasses the Preferred Optical Bandwidth at the Preferred Data Resolution and using the Preferred Data Collection Time Resolution After the plasma process is terminated, the subroutine 204 returns to the "mam menu-like" startup routine 203 of Figure 15 via step 226
  • Figure 17A has an intensity of about 3,200
  • peak 756a in the spectra 752 of Figure 17B has an intensity of about 3,900
  • there is no peak in the spectra 760 of Figure 17C but the corresponding intensity (noise) is about 500, 3) at about the 525 nanometer wavelength region
  • peak 748c in the spectra 744 of Figure 17A has an intensity in excess of 4,000
  • peak 756c in the spectra 752 of Figure 17B has an intensity of about 3,400
  • peak 764c in the spectra 760 of Figure 17C has an intensity of about 2,750, 4) at about the 587 nanometer wavelength region
  • there is no peak in the spectra 744 of Figure 17A but the intensity is about 500 (noise)
  • peak 764d in the spectra 760 of Figure 17C has an intensity of about 3,000
  • Each of the spectra 770, 774, and 778 are characterized by a number of peaks 772, 776, and 780, respectively, of varying intensities at various wavelengths
  • a comparison of the spectra 770, 774, and 778 reveals that their associated patterns are in fact different, including without limitation as follows 1 ) at about the 625 nanometer wavelength region, peak 772e in the spectra 770 of Figure 18A has an intensity of about 500, peak 776e in the spectra 774 of Figure 18B has an intensity of about 300, and there is no substantial peak in the spectra 778 of Figure 18C, 2) at about the 675 nanometer wavelength region, peak 772f in the spectra 770 of Figure 18A has an intensity of about 4,000, peak 776f in the spectra 774 of Figure 18B has an intensity of about 1 ,000, and there is no substantial peak in the spectra 778 of Figure 18C, and 3) at about the 685 nanometer wavelength region, peak 772g in the spectra
  • More than one entry of a plasma clean may be required in the normal spectra subdirectory 288 depending upon a variety of factors
  • the spectral data of a plasma clean run on a chamber 36 after a wet clean may look different than a plasma clean that is run on a new chamber 36 which has not been wet cleaned
  • the spectral data of a plasma clean which is run after the chamber 36 has been running a first type of plasma recipe may look different than a plasma clean which is run after the chamber 36 has been running a second type of plasma recipe which is different from the first type of plasma recipe
  • Figure 20A presents a spectra 1288 of an exemplary plasma in the processing chamber 36 at the start of a conditioning wafer operation
  • Figure 20B presents a spectra 1292 of an exemplary plasma at an intermediate point in the conditioning wafer operation
  • Figure 20C presents a spectra 1296 of an exemplary plasma at the end of the conditioning wafer operation.
  • Each of the spectra 1288, 1292 and 1296 are characterized by a number of peaks 1290, 1294, and 1298, respectively, of varying intensities at various wavelengths.
  • Plasma Health Module 252 - Figures 21-25 The current plasma process module 250 of Figures 7 and 32 is available for monitoring the health of any plasma process which is conducted within the processing chamber 36 first through a comparison of at least a portion of its spectral data with at least a portion of the spectral data stored in the normal spectra subdirectory 288 ( Figure 9). Plasma recipes (whether run on production wafers 18 or qualification wafers 18), plasma cleans (with or without wet cleans), and conditioning wafer operations, as well as the health of any other plasma process, may each be evaluated through the plasma health module 252.
  • each of the endpoints of this range may be desirable to include a "buffer" on each of the endpoints of this range as well (e.g., extend by about 25 nanometers on each end of the range).
  • the above may be further limited by limiting the plasma health evaluation to those optical emissions segments which include only errors from the same type of plasma process which is to be run in the chamber 36 (e.g., same plasma recipe).
  • information on endpoint of the plasma process or discrete portion thereof may be used to define the wavelengths to be evaluated in relation to plasma health.
  • endpoint may be called based upon a change at one or more specific wavelengths.
  • Plasma health may be evaluated by looking at a ⁇ 25 nanometer region around each wavelength which is used to call endpoint.
  • Spectral data from the current plasma process is first compared against the normal spectra subdirectory 288 to determine if the current plasma process "matches” any plasma process stored within the normal spectra subdirectory 288. As long as the current plasma process "matches” at least one plasma process stored in the normal spectra subdirectory 288, the current plasma process is characterized as being "normal” or “healthy” and the plasma health subroutine 253 will continue to limit its search for "matching" spectra to the normal spectra subdirectory 288. However, oftentimes there is an error or aberration during a plasma process which may have some type of adverse effect on the desired end result of the plasma process, and this should be identifiable from the spectra of the plasma in the chamber 36.
  • Step 258 of the plasma health subroutine 253 calls the pattern recognition module 370 of Figure 13 to undertake a comparative analysis between the
  • the point-by-point analysis embodied by step 386 of the pattern recognition subroutine 374 of Figure 13 may be performed in relation to only those spectra within the abnormal spectra subdirectory 292 which were also recorded at the same 20 second time period or within ⁇ 10 seconds (or any other desired amount) of this time period.
  • Plasma health module 252 may not have narrowed down the identification of the current plasma process to a single plasma process within the normal spectra subdirectory 288. How the plasma health module 252 may identify a current plasma process being run on product in the processing chamber 36 is addressed below in relation to the plasma health/process recognition subroutines 790, 852, and 924 of Figures 22- 24.
  • the plasma step of a plasma process may also be used as a refining search criterion for which spectra of the abnormal spectra subdirectory 292 are analyzed by the pattern recognition module 370.
  • the pattern recognition module 370 returns control of the plasma monitoring operation back to the plasma health subroutine 253 of Figure 21 after the pattern recognition module 370 has determined whether there is a "match” between the spectra of the plasma in the chamber 36 at the current time t c (from step 254 of the plasma health subroutine 253) and the relevant spectra from the abnormal spectra subdirectory 292.
  • the result (“match” or “no match”) of the analysis by the pattern recognition module 370 is provided to step 276 of the plasma health subroutine 253 of Figure 21.
  • the plasma health/process recognition subroutine 790 also presents one way in which a current plasma process being run in the subject chamber 36 may be evaluated against multiple plasma processes stored in the normal spectra subdirectory 288 of Figure 9. These very same principles may be implemented in the plasma health subroutine 253 of Figure 21.
  • an indication may be provided to operations personnel on the display 130 ( Figure 6), or by any of the other methods described above, that the plasma health/process recognition subroutine 790 has determined that the current plasma process being run in the processing chamber 36 corresponds, through the current time t c , with Process A. It may be inaccurate and therefore inadvisable at this point in time to indicate that the plasma process currently being run in the processing chamber 36 is definitively Process A.
  • the comparison of the current plasma process with the normal spectra subdirectory 288 up to this time has been limited to Process A.
  • the spectra of the plasma in the chamber 36 up through the current time t c could in fact also "match" the relevant spectra of one or more other plasma processes stored in the normal spectra subdirectory 288.
  • the spectra at this new current time t c from the processing chamber 36 is then obtained for the subroutine 790 at step 808, and the subroutine 790 returns to step 800 where the pattern of this new spectra is compared with the pattern of the relevant spectra of Recipe A to determine if they "match" in accordance with the foregoing.
  • Steps 800, 812, 802, 806, 804, and 808 define a loop 818 which continues to be executed to compare the current plasma process being run in the processing chamber 36 with one of the plasma processes stored in the normal spectra subdirectory 288 (Process A in the subject example) until one of two conditions exists. One of these conditions is where the current plasma process has been completed and "matched" an entire plasma process stored in the normal spectra subdirectory 288. In this case, the subroutine will exit from step 806 to step 810. Control of the plasma monitoring operations may be returned by step 810 to, for instance, the startup module 202 of Figure 15.
  • the plasma health/process recognition subroutine 790 will proceed from step 814 to step 822 where data on the next plasma process stored in the normal spectra subdirectory 288 is recalled in some manner for use by the subroutine 790.
  • This data on a plasma process stored in the normal spectra subdirectory 288 is recalled for evaluation by the subroutine 790 against the current plasma process from the time ⁇ through the latest current time t c (i.e. , from the very beginning of this plasma process).
  • the subroutine 790 returns to step 798 from step 822 where the current time t c is returned to the start time t 0 , and the loop 818 of the subroutine 790 is entered to evaluate the current plasma process against the next plasma process stored in the normal spectra subdirectory 288 in the above-described manner.
  • Data relating to the current plasma process being run on product in the processing chamber 36 is obtained for the plasma health/process recognition subroutine 852 at step 860. Included in this data is at least a spectra of the plasma within the processing chamber 36 during the execution of a plasma process within the processing chamber 36 at the current time t c which was obtained from the chamber 36 over the Preferred Optical Bandwidth and at the Preferred Data Resolution.
  • the spectra at the current time t c from step 860 of the plasma health/process recognition subroutine 852 is effectively concurrently compared with each of the relevant plasma process stored in the normal spectra subdirectory 288 the first time through the mam body of the plasma health/process recognition subroutine 852
  • the logic operator "Flag 2 " associated with each such plasma process has been set to "T" at the previous step 856, so the subroutine 852 will proceed through steps 864 (Process A), 880 (Process B), and 892 (Process "X") to steps 868 (Process A), 884 (Process B), and 892 (Process "X") to where the subroutine 852 is directed to proceed to the pattern recognition module 370 of Figure 13
  • the pattern recognition module 370 determines if the pattern of the current spectra at the current time t c is a "match" with the relevant spectra of the subject plasma process stored in the normal spectra subdirectory 288 (Process A in the
  • Notification of the deviation of the current plasma process from the process selected in step 928 of the plasma health/process recognition subroutine 924 may be provided through execution of step 956 which calls the process alert module 428 discussed above in relation to Figure 14 and which may also offer one or more protocols in relation to this condition if the process control feature is enabled at step 436 of the process subroutine 432
  • Other options such as allowing the present plasma process to be terminated (even though it may be a valid plasma process) may also be provided (not shown)
  • a variation of the subroutine 924 relates to the fact that the same plasma recipe is typically run on an entire cassette 6, and that the cassette 6 may have one or more qualification wafers 18 in with the production wafers 18 Even though the same plasma recipe is run on these wafers 18, certain differences between the production wafers 18 and the qualification wafer(s) 18 may produce differences in their respective spectral patterns
  • the logic of the subroutine 924 may be to first compare the current plasma process against
  • Plasma Health/Process Step Recognition Subroutine 972 - Figure 25 Another embodiment of a subroutine which may be used by the plasma health module 252 is presented in Figure 25 Not only does the subroutine 972 of Figure 25 monitor or evaluate the health of the plasma from a plasma process being run in the processing chamber 36, but the subroutine 972 is also able to identify the current plasma step of the current plasma process being run in the processing chamber 36 As such, the subroutine 972 is characterized as a plasma health/process step recognition subroutine 972 Two factors are key to providing this plasma step identification function One is that the steps of the subject plasma process actually differ sufficiently in relation to their subject spectra such that they can be distinguished as is the case of the multi-step recipe illustrated in Figures 17A-C above Another is that the identify of the plasma step be associated in some manner with its corresponding spectra, such as through inputting information to the plasma step field 322e discussed above in relation to Figure 12A
  • the plasma health/process step recognition subroutine 972 proceeds with a "parallel" logic and in the same manner as the plasma health/process recognition subroutine 852 of Figure 23
  • the plasma health/process step recognition subroutine 972 of Figure 25 begins at step 976 where the Target Directory for the pattern recognition module 370 of Figure 13 is set to the normal spectra subdirectory 288 (i e , the search for "matching" spectra will initiate in the normal spectra subdirectory 288)
  • Another preliminary step of the plasma health/process step recognition subroutine 972 is at step 980 where a logic operator Flag 3 is set to "T" for each of the plasma processes stored in the normal spectra subdirectory 288
  • the order in which steps 976 and 980 are executed is not particularly important to the present invention
  • Data relating to the current plasma process being run in the processing chamber 36 is obtained for the subroutine 972 at step 984 Included in this data is a spectra of the plasma within the processing chamber 36 during execution of a plasma process being run
  • step 1012 the clock of the subroutine 972 is adjusted by increasing the current time t c by a factor of "n"
  • the magnitude of "n”def ⁇ nes the Analytical Time Resolution i e , what portion of the collected data is actually analyzed
  • the subroutine 972 then proceeds from step 1012 to step 1016 where all of the plasma processes from the normal spectra subdirectory 288 which are still a potential "match” for the current plasma process being run in the processing chamber 36 are displayed to the appropriate personnel (e g , on display 130 in Figure 6) Moreover, the specific process step, if any, of each of these potential plasma processes is also displayed at step 1016 Another spectra at the new current time t
  • the distmctiveness of the patterns between the spectra 1052, 1060, and 1068 may be utilized to apprise the appropriate personnel of the condition of the processing chamber 36 in relation to cleaning schedules
  • the chamber condition subroutine 1088 assumes that when a given plasma step takes longer than its associated time limit, the associated cause is the existence of a dirty chamber condition
  • a maximum time limit for each plasma step, if any, of the plasma process to be run in the chamber 36 should be obtained by the chamber condition subroutine 1088 at its step 1092
  • Personnel may manually input the maximum time limit for the subject plasma step(s) of the plasma process with the data entry device 132 for purposes of step 1092 of the chamber condition subroutine 1088
  • a more preferred approach is to include these time limits in the maximum total process step time field 322f for the mam data entry 350 of the plasma process as stored in the normal spectra subdirectory 288 ( Figure 12A)
  • the maximum time limit may be empirically determined and input to the subject maximum total process step time field 322f
  • the limits referred to in step 1092 may simply coincide with a time in which the operator of the fabrication facility employing the wafer production system 2 has determined is necessary to maintain a desired production rate, which would then be input to the subject maximum total process step time field 322f
  • Information for step 1092 of the chamber condition subroutine 1088 may then be automatically retrieved from the corresponding maximum
  • the angle between the reference axis 490 and the outer surface 486 of the window 478 is within the range of about 2° to about 45°, and in another embodiment this angle is less than the critical angle.
  • This relative positioning of the inner surface 482 and outer surface 486 of the window 478 has the effect of having that portion of the calibration light, which is reflected by the outer surface 486 of the window 478, be directed away from the axis 490 and thereby away from the inner cables 508 of the fiber optic cable assembly 504 which lead to the spectrometer assembly 506.
  • FIG. 37 Further enhancement of the arrangement presented in Figure 37 may be realized by incorporating a broad band anti-reflection coating (e g , of multiple- layer or laminated construction) on the outer surface 42 of the window 38 at least in that region where the calibration light impacts the outer surface 42
  • a broad band anti-reflection coating e g , of multiple- layer or laminated construction
  • These types of coatings increase the amount of the calibration light which passes through the outer surface 42 of the window 38 to the inner surface 40 by reducing the amount of the calibration light which is reflected by the outer surface 42
  • the embodiment presented in Figure 31 could be used with the type of window presented in the Figure 37 embodiment where the above- noted coating is included on the window 38 and with the ends of the fiber optic cable assembly 504 projecting toward the window 38 to form at least a substantially perpendicular angle relative to both the outer surface 42 and the inner surface 40
  • This arrangement is less preferable in that notwithstanding the presence of an anti-reflection coating on the outer surface 42 of the window 38, some portion of the calibration
  • calibration light from the calibration light source 728 is directed through the fiber optic cable 704, through the port 1584b in the fiber fixture 1576, through the recess 1572 in the window fixture 1568, and to the outer surface 42 of the window 478.
  • Calibration light which is reflected by the inner surface 40 of the window 38 travels through the recess
  • FIG. 61 Another embodiment of a device for interconnecting a fiber optic cable end 1587 (e g , of fiber optic cable assembly 504, of fiber optic cable 704, of fiber optic cable 708, or an adapter for interfacing with the same) is presented in Figure 61 in the form of a fixture assembly 1586
  • the fixture assembly 1586 generally includes a housing 1588 which may be appropriately interconnected with the processing chamber 36 so that an aperture 1598 of the housing 1588 is aligned with the window 38 on the chamber 36 to at least a degree (i e , to allow for the passage of light to the fiber optic cable end 1587
  • An appropriate seal ring 1592 may be disposed within and become part of this interconnection
  • a cable mount 1590 is disposed within at least a portion of the aperture 1598 of the housing 1588 to which the fiber optic end 1587 is actually attached
  • An appropriate interfacing relationship exists between the cable mount 1590 and the housing 1588 such that the cable mount 1590, and thereby the fiber optic cable end 1587, may be moved relative to the housing 1588
  • the spectra 690 is characterized by a plurality of discrete peaks 694 of varying intensity, with “intensity” again being plotted along the "y” axis and expressed in “counts” which is reflective of the intensity level, and with “wavelength” being plotted along the "x” axis in nanometers.
  • the profile of the spectra 670 of Figure 47B between about the 575 nm and 950 nm wavelengths is "flatter" than the corresponding portion of the spectra 666 of Figure 46B. Therefore, the window
  • Control of the calibration subroutine 616 of Figure 48 may pass from step 644 to step 656 if there was no complete filtering of data in the reflected spectra
  • Calibration of the reflected spectra pursuant to step 656 would then entail the application of at least two different calibration factors or a plurality of gams throughout the reflected spectra, or alternatively the normalization as discussed above
  • one calibration factor may be applied to the reflected spectra over the 200 nanometer to 500 nanometer wavelength region, while a different calibration factor may be applied to reflected spectra over the 501-900 nanometer wavelength region
  • Calibration subroutine 616 then exits step 656 to step 660 where control may be transferred to, for instance, the startup module 202 of Figure 15
  • the current plasma process module 250 includes a research module 1300 which is a submodule thereof and which is presented in Figure 49
  • the research module 1300 includes a research subroutine 1478 which is run to identify which character ⁇ st ⁇ c(s) of those optical emissions of the plasma in the processing chamber 36 may be indicative of the endpoint of the subject plasma step, and which may then be used by the endpoint detection module 1200 of Figures 7 and 32 to identify the occurrence of the endpoint of the subject plasma step
  • the research module 1300 may be accessed through the startup module 202 of Figure 15 through execution of steps 144 and 148
  • the research subroutine 1478 of Figure 49 typically is set to evaluate multiple executions of the same plasma step and identifies the optical emissions data of the plasma in the chamber 36 which may be used to call endpoint Some information about endpoint may be obtained by looking at the optical emissions data from only a single run
  • the research subroutine 1478 of Figure 49 utilizes, but does not necessarily require, some knowledge of the plasma step, such as a time estimate of the length of time required to reach the endpoint of the plasma step In one embodiment, this a priori knowledge may be used such that optical emissions data is obtained on the plasma step at a point in time which should include this endpoint
  • a time estimate t e for completing the subject plasma step is input to the subroutine 1478 by execution of step 1480 This time estimate for reaching endpoint may be calculated based upon, for instance, knowing the etch rate of the subject process and the thickness of the layer to be etched away
  • Figures 51A-C present the optical emissions data for the same wavelengths ⁇ 1? ⁇ 2 , and ⁇ 3 that are presented in Figures 50A-C, but from another running of the same plasma step in the processing chamber 36
  • the plot of the wavelength ⁇ ., in Figure 51 A still indicates that nothing about endpoint can be derived from this wavelength
  • the plot for the wavelength ⁇ 2 in Figure 51 B is at least substantially the same as presented in Figure 50B
  • the two distinct changes in its emissions line may be due, for instance, to certain changes in the process such as the opening/closing of a valve(s)
  • the plot for the wavelength ⁇ 3 in Figure 51 C has the same general pattern, the two distinct changes occur about 5 seconds later than they did in the run depicted in Figure 50C This may be an indication that the wavelength ⁇ 3 is reflective of the endpoint of the subject plasma step where endpoint may vary in time by some acceptable time differential
  • step 1654 in which product (e g , one or more wafers) is loaded into the processing chamber 36. Since endpoint may be called on processes which are run in the processing chamber 36 in the absence of product, step 1654 may be alleviated when research is being done to identify an endpoint wavelength region for these types of processes
  • the plasma process is nonetheless executed as indicated by step 1656 of the research subroutine 1650
  • Optical emissions data are obtained as indicated by step 1658, preferably throughout the entirety of the plasma process, and more preferably using the Preferred Optical Bandwidth, the Preferred Data
  • Step 1658 indicates that a plot of an endpoint evaluation wavelength region area versus time is generated for each endpoint evaluation wavelength region, preferably over the entirety of the subject plasma process or portion thereof (i e , determine/calculate the area under the spectral pattern of the subject endpoint evaluation wavelength region at time l
  • endpoint detection subroutine 1456 is used to determine when a given plasma step of a plasma recipe has affected its intended purpose or achieved the desired result A current spectra of the plasma in the processing chamber
  • actions may be taken to apprise personnel that the endpoint of the subject plasma step has been reached (through execution of steps 454 and 458 of the process alert subroutine 432), actions may be taken in relation to control of the plasma process (e g , initiating the next plasma step or terminating the plasma recipe if the subject step is the last step of the recipe), or both Whether through the process alert module 428 or through step 1472 of the endpoint detection subroutine 1456, control of plasma monitoring operations may then be returned to, for instance, the startup module 202 of Figure 15
  • FIG. 53 Another embodiment of an endpoint detection subroutine which may be accessed through the endpoint module 1200 is presented in Figure 53
  • the endpoint detection subroutine 1506 of Figure 53 initiates at step 1510 where a spectra of the plasma in the processing chamber 36 at the current time t c is obtained for the subroutine 1506
  • This spectra and a "reference" spectra are subtracted from each other at step 1514 Only the differential is important in relation to step 1514 That is, it is not of particular importance whether the current spectra is subtracted from the "reference" spectra or vice versa
  • both the reference spectra and the spectra on the current plasma process which is obtained are defined by the Preferred Optical Bandwidth and
  • the "differential" referred to in step 1518 of the endpoint detection subroutine 1506 of Figure 53 may be compared with a predetermined tolerance, such as baseline intensity A raw difference basis, a percentage difference basis, or both may be used for establishing this tolerance
  • a predetermined tolerance such as baseline intensity A raw difference basis, a percentage difference basis, or both may be used for establishing this tolerance
  • the subroutine 1506 may be directed to proceed from step 1518 to step 1530
  • Another way of saying this is that endpoint is deemed to have been reached for purposes of the endpoint detection subroutine 1506 when there are no longer any substantial peaks in the differential defined by step 1514
  • Figures 54A-C, 55A-C, and 56A-C The spectra 1496a of Figure 54A is representative of plasma in the processing chamber 36 in the initial part (e g , for a current time t 0 ) of a plasma step being run on product within the processing chamber 36 (e g , the spectra of Figure 54A is
  • the differential between the optical emissions associated with the times t c1 and t c2 is ever more than the predetermined amount associated with step 1224 of the endpoint detection subroutine 1204, this may be an indication of the above-noted "modal" change in the plasma which is in turn indicative of endpoint It is not definitively indicative of the type of "modal” change at this point in time however Only those "modal" changes associated with the plasma which occur at about the time that endpoint is estimated to occur, which appear quickly or abruptly, and which are persistently observed in subsequent executions of the same plasma process are indicative of a change in impedance which occurs at endpoint Therefore, it may be desirable to execute a plurality of runs for each particular plasma process in which the subroutine 1204 is used before relying upon the subroutine 1204 to call endpoint by execution of the process alert module 428 through execution of step 1232
  • the subroutine 1204 may also be implemented to confirm or increase the confidence level that endpoint has been reached when another endpoint detection technique is being used to call endpoint as well
  • FIG. 64 is illustrated in Figure 64 in the form of an endpoint detection subroutine 1670.
  • the subroutine 1670 includes preparation or initialization steps 1672 and
  • Step 1672 directs that the endpoint wavelength region(s) be selected.
  • One or more endpoint wavelength regions may be used to call a specific endpoint within the subject plasma process.
  • Endpoint "A” may be called when indicated by relevant plots of either of the endpoint wavelength regions or only when indicated by the relevant plots of all relevant endpoint wavelength regions.
  • One endpoint wavelength region may be designated as the primary indicator for endpoint "A", and any other endpoint wavelength region associated with the same endpoint may be used merely to increase the confidence level that the call on endpoint "A" by the primary endpoint wavelength region was correct.
  • Wafer Distribution Module 1384 - Figures 59-60 Various of the above-noted evaluations provided by the current plasma process module 250 may provide information to the wafer distribution module 1384 of Figures 59-60 to have some type of effect on the distribution of wafers to the various process chambers 36 of the wafer production system 2
  • One embodiment of a subroutine which may be used by the wafer distribution module 1384 is illustrated in Figure 59
  • the subroutine 1388 of Figure 55 includes steps 1392, 1396, 1400, and 1402 in which the protocol is for the wafer distribution subroutine 1388 to proceed to the plasma process product module 252 for each of chambers 36a-d ( Figure 1 )
  • the subroutine 1388 may of course accommodate wafer production systems having different numbers of processing chambers 36 Monitoring of the current plasma recipes being run on product in each of these processing chambers 38a-d is included in the protocol of 1404 Any deviation from the normal spectra subdirectory 288 of the current plasma recipe being run on product in any of the chambers 36a-d is noted
  • the main control unit 58 and plasma monitoring control unit 128 of each given wafer production system 2 are both operatively interconnected with a remote chamber cluster station 1614 which is located outside of the clean room
  • the access to the modules of Figure 66 may be different for the remote master station 1630 and each of the remote chamber cluster stations 1614, the access to the modules of Figure 66 may be different between one or more of the remote chamber cluster stations 1614, or any combination thereof.
  • the modules illustrated in Figure 66 also may be made available to or incorporated in any one or more of the plasma monitoring control units 128 within the clean room 1646, whether included on a plasma monitoring network 1510 or in a non-networked environment. In many cases, neither any of the remote chamber cluster stations 1614 nor the remote master station 1630 will have access to any main control unit 58 to control the operation of the same.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

L'invention se rapporte à divers aspects d'un processus de traitement au plasma et plus particulièrement à la surveillance de tels processus de traitement au plasma. Un de ces aspects est relatif au moins en partie à l'étalonnage et à l'initialisation d'un ensemble de traitement au plasma (174). Ce type d'étalonnage peut servir à gérer les décalages de longueurs d'ondes, les décalages d'intensités ou les deux, associés aux données d'émissions optiques fournies par un processus au plasma. Il est possible de diriger une lumière destinée à l'étalonnage sur une fenêtre (124) à travers laquelle les données d'émissions optiques sont recueillies afin de déterminer l'effet éventuel que la surface interne de la fenêtre possède sur les données d'émissions optiques en cours d'obtention, sur le fonctionnement du dispositif recueillant les données d'émissions optiques ou sur les deux. Un autre aspect est relatif au moins en partie à divers types d'évaluations qu'il est possible d'effectuer sur un processus au plasma qui a été exécuté, et plus particulièrement sur un processus en cours d'exécution, au sein de la chambre de traitement (74).
EP99918803A 1998-04-23 1999-04-23 Procede et dispositif de surveillance des operations de traitement au plasma Withdrawn EP1105703A4 (fr)

Applications Claiming Priority (40)

Application Number Priority Date Filing Date Title
US64972 1979-08-08
US65247 1979-08-09
US64966 1987-06-19
US65307 1987-06-23
US64970 1993-05-20
US6524598A 1998-04-23 1998-04-23
US6497298A 1998-04-23 1998-04-23
US64957 1998-04-23
US09/065,006 US6090302A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,362 US6132577A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US64793 1998-04-23
US65195 1998-04-23
US09/064,793 US6134005A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US65680 1998-04-23
US09/064,970 US6269278B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/064,991 US6246473B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US65362 1998-04-23
US09/064,965 US6254717B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/064,957 US6221679B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,680 US6077386A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,359 US6157447A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US65245 1998-04-23
US09/065,274 US6275740B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US64991 1998-04-23
US65006 1998-04-23
US65203 1998-04-23
US09/065,358 US6419801B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US65359 1998-04-23
US65274 1998-04-23
US64965 1998-04-23
US09/065,247 US6169933B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,195 US6223755B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/064,966 US6165312A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,257 US6123983A (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,307 US6261470B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/065,203 US6192826B1 (en) 1998-04-23 1998-04-23 Method and apparatus for monitoring plasma processing operations
US09/290,903 US6383402B1 (en) 1998-04-23 1999-04-12 Method and apparatus for monitoring plasma processing operations
PCT/US1999/008894 WO1999054694A1 (fr) 1998-04-23 1999-04-23 Procede et dispositif de surveillance des operations de traitement au plasma
US65257 2002-09-30
US65358 2002-10-08

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7565220B2 (en) 2006-09-28 2009-07-21 Lam Research Corporation Targeted data collection architecture
US7672747B2 (en) 2000-03-30 2010-03-02 Lam Research Corporation Recipe-and-component control module and methods thereof
US7814046B2 (en) 2006-09-29 2010-10-12 Lam Research Corporation Dynamic component-tracking system and methods therefor

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4138901A (en) * 1999-12-03 2001-06-12 Regents Of The University Of California, The System and method relating to vapor deposition
JP2006501620A (ja) * 2002-09-30 2006-01-12 東京エレクトロン株式会社 プラズマ処理システムとともに光学系を使用するための装置及び方法
WO2008009165A1 (fr) * 2006-07-03 2008-01-24 He Jian Technology(Suzhou)Co.Ltd. PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON
TWI379074B (en) * 2007-05-07 2012-12-11 Verity Instr Inc Calibration method of a radiometric optical monitoring system used for fault detection and process monitoring
CN104266324A (zh) * 2014-10-15 2015-01-07 北京雷克利达机电股份有限公司 可提醒用户更换新风除霾机hepa过滤器的系统和方法
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
CN107466420B (zh) * 2015-04-23 2019-10-25 应用材料公司 用于腔室清洁终点的原位蚀刻速率确定
KR102543349B1 (ko) * 2016-07-11 2023-06-30 삼성전자주식회사 플라즈마 모니터링 장치
CN107782447B (zh) * 2017-09-14 2019-11-15 中国科学院长春光学精密机械与物理研究所 成像光谱仪光谱定标中空间维自动识别方法及系统
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
JP6762927B2 (ja) * 2017-12-19 2020-09-30 株式会社日立ハイテク 信号処理装置及び信号処理方法
US12487121B2 (en) * 2019-04-26 2025-12-02 Applied Materials, Inc. Methods for calibrating an optical emission spectrometer
US11927482B2 (en) * 2019-04-26 2024-03-12 Applied Materials, Inc. Methods for calibrating an optical emission spectrometer
CN114270487B (zh) 2019-07-26 2025-10-10 应用材料公司 基板处理监控
CN112458440B (zh) * 2020-11-18 2022-11-25 北京北方华创微电子装备有限公司 半导体工艺设备及其反应腔室和膜层沉积方法
JP7660021B2 (ja) * 2021-04-26 2025-04-10 東京エレクトロン株式会社 校正装置及び校正方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
US5347460A (en) * 1992-08-25 1994-09-13 International Business Machines Corporation Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication
JPH08232087A (ja) * 1994-12-08 1996-09-10 Sumitomo Metal Ind Ltd エッチング終点検出方法及びエッチング装置
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7672747B2 (en) 2000-03-30 2010-03-02 Lam Research Corporation Recipe-and-component control module and methods thereof
US7565220B2 (en) 2006-09-28 2009-07-21 Lam Research Corporation Targeted data collection architecture
US7814046B2 (en) 2006-09-29 2010-10-12 Lam Research Corporation Dynamic component-tracking system and methods therefor
US8010483B2 (en) 2006-09-29 2011-08-30 Lam Research Corporation Component-tracking system and methods therefor
US8295963B2 (en) 2007-03-29 2012-10-23 Lam Research Corporation Methods for performing data management for a recipe-and-component control module

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KR20040053203A (ko) 2004-06-23
WO1999054694A9 (fr) 2001-08-09

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