EP1114210A4 - Niedrigtemperaturverfahren zur herstellung epitaktischer schichten auf ein halbleitersubstrat - Google Patents

Niedrigtemperaturverfahren zur herstellung epitaktischer schichten auf ein halbleitersubstrat

Info

Publication number: EP1114210A4
Authority: EP; European Patent Office
Prior art keywords: forming; low; semiconductor substrate; epitaxial layer; temperature process
Prior art date: 1998-08-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP99945264A

Other languages

English (en)

French (fr)

Other versions

EP1114210A1 (de

Inventor

Georg M Ritter

Bernd Tillack

Thomas Morgenstern

Dirk Wolansky

Paul R Mchugh

Kevin Stoddard

Konstantinos Tsakalis

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semitool Inc

Original Assignee

Semitool Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-08-26

Filing date

1999-08-26

Publication date

2003-04-16

1999-08-26 Application filed by Semitool Inc filed Critical Semitool Inc

2001-07-11 Publication of EP1114210A1 publication Critical patent/EP1114210A1/de

2003-04-16 Publication of EP1114210A4 publication Critical patent/EP1114210A4/de

Status Withdrawn legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
239000000758 substrate Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Chemical Vapour Deposition (AREA)

EP99945264A 1998-08-26 1999-08-26 Niedrigtemperaturverfahren zur herstellung epitaktischer schichten auf ein halbleitersubstrat Withdrawn EP1114210A4 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US9805798P	1998-08-26	1998-08-26
US98057P		1998-08-26
PCT/US1999/019684 WO2000012785A1 (en)	1998-08-26	1999-08-26	Low-temperature process for forming an epitaxial layer on a semiconductor substrate

Publications (2)

Publication Number	Publication Date
EP1114210A1 EP1114210A1 (de)	2001-07-11
EP1114210A4 true EP1114210A4 (de)	2003-04-16

Family

ID=22266670

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP99945264A Withdrawn EP1114210A4 (de)	1998-08-26	1999-08-26	Niedrigtemperaturverfahren zur herstellung epitaktischer schichten auf ein halbleitersubstrat

Country Status (3)

Country	Link
EP (1)	EP1114210A4 (de)
JP (1)	JP2002523908A (de)
WO (1)	WO2000012785A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004537855A (ja)	2001-07-27	2004-12-16	イーハーペーゲーエムベーハー−イノヴェイションズフォーハイパフォーマンスマイクロエレクトロニクス／インスティチュートフュアイノヴァティーヴェミクロエレクトローニク	薄いエピタキシャル半導体層の製造方法および装置
DE10335460B4 (de) *	2003-08-02	2008-02-28	Infineon Technologies Ag	Verfahren zum Betreiben einer CVD-Anlage
CN100418247C (zh) *	2003-11-07	2008-09-10	崇越科技股份有限公司	多腔体分离外延层有机金属化学气相外延装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4738618A (en) *	1987-05-14	1988-04-19	Semitherm	Vertical thermal processor
JPH10209050A (ja) *	1997-01-24	1998-08-07	Nec Corp	半導体薄膜の製造方法
WO1998035531A1 (en) *	1997-01-27	1998-08-13	Semitool, Inc.	Model based temperature controller for semiconductor thermal processors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5273621A (en) *	1989-11-27	1993-12-28	At&T Bell Laboratories	Substantially facet-free selective epitaxial growth process
US5168089A (en) *	1989-11-27	1992-12-01	At&T Bell Laboratories	Substantially facet-free selective epitaxial growth process
US5089441A (en) *	1990-04-16	1992-02-18	Texas Instruments Incorporated	Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH05217921A (ja) *	1991-09-13	1993-08-27	Motorola Inc	材料膜のエピタキシアル成長を行うための温度制御された処理
US5498578A (en) *	1994-05-02	1996-03-12	Motorola, Inc.	Method for selectively forming semiconductor regions
EP0799495A4 (de) *	1994-11-10	1999-11-03	Lawrence Semiconductor Researc	Silizium-germanium-kohlenstoff-verbindung und dazugehörende prozesse

1999
- 1999-08-26 WO PCT/US1999/019684 patent/WO2000012785A1/en not_active Ceased
- 1999-08-26 JP JP2000567765A patent/JP2002523908A/ja active Pending
- 1999-08-26 EP EP99945264A patent/EP1114210A4/de not_active Withdrawn

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4738618A (en) *	1987-05-14	1988-04-19	Semitherm	Vertical thermal processor
JPH10209050A (ja) *	1997-01-24	1998-08-07	Nec Corp	半導体薄膜の製造方法
US6074478A (en) *	1997-01-24	2000-06-13	Nec Corporation	Method of facet free selective silicon epitaxy
WO1998035531A1 (en) *	1997-01-27	1998-08-13	Semitool, Inc.	Model based temperature controller for semiconductor thermal processors

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) *
REGOLINI J L ET AL: "EPITAXIAL SILICON CHEMICAL VAPOR DEPOSITION BELOW ATMOSPHERIC PRESSURE", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B04, no. 1/4, 1 October 1989 (1989-10-01), pages 407 - 415, XP000095491, ISSN: 0921-5107 *
See also references of WO0012785A1 *

Also Published As

Publication number	Publication date
JP2002523908A (ja)	2002-07-30
EP1114210A1 (de)	2001-07-11
WO2000012785A1 (en)	2000-03-09

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Legal Events

Date	Code	Title	Description
2001-05-24	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2001-07-11	17P	Request for examination filed	Effective date: 20010323
2001-07-11	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
2003-04-02	RIC1	Information provided on ipc code assigned before grant	Ipc: 7C 30B 25/02 B Ipc: 7C 30B 25/10 B Ipc: 7C 30B 25/16 B Ipc: 7C 30B 25/14 B Ipc: 7C 30B 25/08 A
2003-04-16	A4	Supplementary search report drawn up and despatched	Effective date: 20030304
2003-05-09	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN
2003-06-25	18W	Application withdrawn	Effective date: 20030430