EP1198620A4 - Verfahren zur nassbehandlung von elektronischen bauteilen mit kupferenthaltenden oberflächen - Google Patents

Verfahren zur nassbehandlung von elektronischen bauteilen mit kupferenthaltenden oberflächen

Info

Publication number
EP1198620A4
EP1198620A4 EP00936165A EP00936165A EP1198620A4 EP 1198620 A4 EP1198620 A4 EP 1198620A4 EP 00936165 A EP00936165 A EP 00936165A EP 00936165 A EP00936165 A EP 00936165A EP 1198620 A4 EP1198620 A4 EP 1198620A4
Authority
EP
European Patent Office
Prior art keywords
electronic components
wet processing
whose surfaces
components whose
contain copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00936165A
Other languages
English (en)
French (fr)
Other versions
EP1198620A1 (de
Inventor
Steven Verhaverbeke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MATTSON TECHNOLOGY IP Inc
Original Assignee
MATTSON TECHNOLOGY IP Inc
MATTSON TECHNOLOGY IP Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MATTSON TECHNOLOGY IP Inc, MATTSON TECHNOLOGY IP Inc filed Critical MATTSON TECHNOLOGY IP Inc
Publication of EP1198620A1 publication Critical patent/EP1198620A1/de
Publication of EP1198620A4 publication Critical patent/EP1198620A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
EP00936165A 1999-05-21 2000-05-19 Verfahren zur nassbehandlung von elektronischen bauteilen mit kupferenthaltenden oberflächen Withdrawn EP1198620A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13526799P 1999-05-21 1999-05-21
US135267P 1999-05-21
PCT/US2000/014019 WO2000071782A1 (en) 1999-05-21 2000-05-19 Methods for wet processing electronic components having copper containing surfaces

Publications (2)

Publication Number Publication Date
EP1198620A1 EP1198620A1 (de) 2002-04-24
EP1198620A4 true EP1198620A4 (de) 2004-12-22

Family

ID=22467309

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00936165A Withdrawn EP1198620A4 (de) 1999-05-21 2000-05-19 Verfahren zur nassbehandlung von elektronischen bauteilen mit kupferenthaltenden oberflächen

Country Status (7)

Country Link
EP (1) EP1198620A4 (de)
JP (1) JP2003500537A (de)
KR (1) KR20020030742A (de)
CN (1) CN1352703A (de)
AU (1) AU5152200A (de)
TW (1) TW466728B (de)
WO (1) WO2000071782A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020072595A (ko) * 2001-03-12 2002-09-18 (주)에스티디 동판의 산화막 형성방법 및 이에 의해 제조된 동판
KR20080072905A (ko) * 2005-11-09 2008-08-07 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 표면에 저유전 물질이 있는 반도체 웨이퍼를 재생하기 위한조성물 및 방법
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
CN105802747B (zh) * 2016-04-15 2018-11-09 林淑录 一种太阳能光伏电池硅片制绒后清洗用的清洗剂
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
CN115558931B (zh) * 2022-10-26 2023-07-04 广东华智芯电子科技有限公司 铜表面晶花的细化方法、腐蚀液组合及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318584A (ja) * 1993-05-10 1994-11-15 Kawasaki Steel Corp Ｃｕ配線が形成されたウエハの洗浄方法及び洗浄後の乾燥方法
JPH0817776A (ja) * 1994-07-01 1996-01-19 Mitsubishi Materials Shilicon Corp シリコンウェーハの洗浄方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526853B2 (de) * 1972-12-22 1977-02-25
US4586961A (en) * 1985-02-15 1986-05-06 Halliburton Company Methods and compositions for removing copper and copper oxides from surfaces
JP2909743B2 (ja) * 1989-03-08 1999-06-23 富山日本電気株式会社 銅または銅合金の化学研磨方法
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
JP3338134B2 (ja) * 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
KR100234541B1 (ko) * 1997-03-07 1999-12-15 윤종용 반도체장치 제조용 웨이퍼의 세정을 위한 세정조성물 및 그를 이용한 세정방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318584A (ja) * 1993-05-10 1994-11-15 Kawasaki Steel Corp Ｃｕ配線が形成されたウエハの洗浄方法及び洗浄後の乾燥方法
JPH0817776A (ja) * 1994-07-01 1996-01-19 Mitsubishi Materials Shilicon Corp シリコンウェーハの洗浄方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHRISTENSON K K ET AL: "Use of dilute HF with controlled oxygen for post Cu CMP cleans", CHEMICAL-MECHANICAL POLISHING - FUNDAMENTALS AND CHALLENGES. SYMPOSIUM 5-7 APRIL 1999 (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOL.566) MATER. RES. SOC WARRENDALE, PA, USA, 2000, pages 267 - 272, XP009038881, ISBN: 1-55899-473-4 *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 02 31 March 1995 (1995-03-31) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31) *
See also references of WO0071782A1 *

Also Published As

Publication number Publication date
JP2003500537A (ja) 2003-01-07
CN1352703A (zh) 2002-06-05
WO2000071782A1 (en) 2000-11-30
KR20020030742A (ko) 2002-04-25
AU5152200A (en) 2000-12-12
TW466728B (en) 2001-12-01
EP1198620A1 (de) 2002-04-24

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