EP1205967A3 - Verfahren zur Ionenstrahlbearbeitung mit Wasserdampf - Google Patents

Verfahren zur Ionenstrahlbearbeitung mit Wasserdampf Download PDF

Info

Publication number
EP1205967A3
EP1205967A3 EP01130911A EP01130911A EP1205967A3 EP 1205967 A3 EP1205967 A3 EP 1205967A3 EP 01130911 A EP01130911 A EP 01130911A EP 01130911 A EP01130911 A EP 01130911A EP 1205967 A3 EP1205967 A3 EP 1205967A3
Authority
EP
European Patent Office
Prior art keywords
water vapour
removal
beam machining
enhanced ion
machining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01130911A
Other languages
English (en)
French (fr)
Other versions
EP1205967B1 (de
EP1205967A2 (de
Inventor
Phillip E. Russell
Dieter P. Griffis
Gordon M. Shedd
Terrence J. Stark
James Vitarelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of EP1205967A2 publication Critical patent/EP1205967A2/de
Publication of EP1205967A3 publication Critical patent/EP1205967A3/de
Application granted granted Critical
Publication of EP1205967B1 publication Critical patent/EP1205967B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
EP01130911A 1995-04-13 1996-04-08 Verfahren zur Ionenstrahlbearbeitung mit Wasserdampf Expired - Lifetime EP1205967B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US421811 1995-04-13
US08/421,811 US5958799A (en) 1995-04-13 1995-04-13 Method for water vapor enhanced charged-particle-beam machining
EP96911620A EP0820641B9 (de) 1995-04-13 1996-04-08 Verfahren für verbesserte wasserdampf-ladungsteilchenstrahlbearbeitung

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP96911620A Division EP0820641B9 (de) 1995-04-13 1996-04-08 Verfahren für verbesserte wasserdampf-ladungsteilchenstrahlbearbeitung

Publications (3)

Publication Number Publication Date
EP1205967A2 EP1205967A2 (de) 2002-05-15
EP1205967A3 true EP1205967A3 (de) 2005-03-02
EP1205967B1 EP1205967B1 (de) 2009-07-22

Family

ID=23672137

Family Applications (2)

Application Number Title Priority Date Filing Date
EP01130911A Expired - Lifetime EP1205967B1 (de) 1995-04-13 1996-04-08 Verfahren zur Ionenstrahlbearbeitung mit Wasserdampf
EP96911620A Expired - Lifetime EP0820641B9 (de) 1995-04-13 1996-04-08 Verfahren für verbesserte wasserdampf-ladungsteilchenstrahlbearbeitung

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP96911620A Expired - Lifetime EP0820641B9 (de) 1995-04-13 1996-04-08 Verfahren für verbesserte wasserdampf-ladungsteilchenstrahlbearbeitung

Country Status (6)

Country Link
US (2) US5958799A (de)
EP (2) EP1205967B1 (de)
JP (1) JP3572081B2 (de)
AU (1) AU5445096A (de)
DE (2) DE69625050T2 (de)
WO (1) WO1996032741A1 (de)

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US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
IL124592A (en) 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6407001B1 (en) 2000-06-30 2002-06-18 Intel Corporation Focused ion beam etching of copper
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
WO2003019629A2 (en) * 2001-08-27 2003-03-06 Nptest, Inc. Process for charged particle beam micro-machining of copper
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
US7140812B2 (en) * 2002-05-29 2006-11-28 3M Innovative Properties Company Diamond tool with a multi-tipped diamond
US20040045419A1 (en) * 2002-09-10 2004-03-11 Bryan William J. Multi-diamond cutting tool assembly for creating microreplication tools
US6863787B2 (en) * 2003-04-02 2005-03-08 Fei Company Dummy copper deprocessing
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
TWI483013B (zh) 2008-04-02 2015-05-01 3M Innovative Properties Co 光導膜及其製造方法
NL2004888A (en) * 2009-06-29 2010-12-30 Asml Netherlands Bv Deposition method and apparatus.
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device
US9443697B2 (en) * 2012-01-31 2016-09-13 Fei Company Low energy ion beam etch
US9275823B2 (en) 2012-03-21 2016-03-01 Fei Company Multiple gas injection system
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles
US9349395B2 (en) * 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching
EP2787523B1 (de) * 2013-04-03 2016-02-10 Fei Company Niedrigenergieionendünnung oder -abscheidung
US10347463B2 (en) 2016-12-09 2019-07-09 Fei Company Enhanced charged particle beam processes for carbon removal
JP7121119B2 (ja) * 2018-06-22 2022-08-17 株式会社日立ハイテク イオンミリング装置
CZ310675B6 (cs) 2023-02-19 2026-04-22 Tescan Group, A.S. Zařízení s fokusovaným svazkem nabitých částic a způsob opracování či zobrazování vzorků

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319889A (en) * 1979-08-06 1982-03-16 Villalobos Humberto F Ultrasharp diamond edges and points and methods of making same by precision micro-irradiation techniques
JPS5747800A (en) * 1980-09-01 1982-03-18 Citizen Watch Co Ltd Etching method for crystal substrate
EP0345757A2 (de) * 1988-06-09 1989-12-13 Fujitsu Limited Veraschungsverfahren zum Entfernen einer organischen Schicht auf einer Halbleiteranordnung während ihrer Herstellung

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US3548189A (en) * 1965-06-16 1970-12-15 Aden B Meinel Method employing ion beams for polishing and figuring refractory dielectrics
US4486292A (en) * 1981-09-23 1984-12-04 Critikon, Inc. Support and anchoring mechanism for membranes in selectively responsive field effect devices
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
US4733074A (en) * 1985-04-17 1988-03-22 Hitachi, Ltd. Sample surface structure measuring method
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
DE3785737T2 (de) * 1986-12-26 1993-09-02 Seiko Instr Inc Geraet zur ausbesserung eines gemusterten films.
JPH0663758B2 (ja) * 1987-10-14 1994-08-22 株式会社東芝 パターンの測定方法
WO1989004052A1 (en) * 1987-10-22 1989-05-05 Oxford Instruments Limited Exposing substrates to ion beams
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH01311551A (ja) * 1988-06-08 1989-12-15 Toshiba Corp パターン形状測定装置
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
JP2541851B2 (ja) * 1989-03-10 1996-10-09 富士通株式会社 有機物の剥離方法
US5093572A (en) * 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
JP2763172B2 (ja) * 1990-03-19 1998-06-11 株式会社神戸製鋼所 ダイヤモンド薄膜のエッチング方法
EP0463870B1 (de) * 1990-06-26 1999-02-24 Fujitsu Limited Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas
WO1992000601A1 (fr) * 1990-06-27 1992-01-09 Fujitsu Limited Procede de fabrication d'un circuit integre a semi-conducteurs et appareil de fabrication correspondant
JP2932650B2 (ja) * 1990-09-17 1999-08-09 松下電器産業株式会社 微細構造物の製造方法
US5188705A (en) * 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
US5159170A (en) * 1991-04-26 1992-10-27 International Business Machines Corporation Grid structure for reducing current density in focussed ion beam
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5504340A (en) * 1993-03-10 1996-04-02 Hitachi, Ltd. Process method and apparatus using focused ion beam generating means
JP3153391B2 (ja) * 1993-07-07 2001-04-09 株式会社日立製作所 集束イオンビーム装置
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
JP3015646B2 (ja) * 1993-12-27 2000-03-06 株式会社東芝 位相シフトマスクの欠陥修正方法及び欠陥修正装置
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319889A (en) * 1979-08-06 1982-03-16 Villalobos Humberto F Ultrasharp diamond edges and points and methods of making same by precision micro-irradiation techniques
JPS5747800A (en) * 1980-09-01 1982-03-18 Citizen Watch Co Ltd Etching method for crystal substrate
EP0345757A2 (de) * 1988-06-09 1989-12-13 Fujitsu Limited Veraschungsverfahren zum Entfernen einer organischen Schicht auf einer Halbleiteranordnung während ihrer Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 6, no. 118 (C - 111) 2 July 1982 (1982-07-02) *

Also Published As

Publication number Publication date
EP1205967B1 (de) 2009-07-22
EP0820641A1 (de) 1998-01-28
EP1205967A2 (de) 2002-05-15
DE69625050D1 (de) 2003-01-09
JPH11503574A (ja) 1999-03-26
JP3572081B2 (ja) 2004-09-29
EP0820641B9 (de) 2003-08-20
US5958799A (en) 1999-09-28
DE69625050T2 (de) 2003-09-04
EP0820641B1 (de) 2002-11-27
DE69637975D1 (de) 2009-09-03
US6140655A (en) 2000-10-31
WO1996032741A1 (en) 1996-10-17
AU5445096A (en) 1996-10-30

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