EP1229580A3 - Elektrochemische Reduktion von Kupferkeimschichten zur Reduzierung von Leerstellen in einer elektrochemischen Abscheidung - Google Patents
Elektrochemische Reduktion von Kupferkeimschichten zur Reduzierung von Leerstellen in einer elektrochemischen Abscheidung Download PDFInfo
- Publication number
- EP1229580A3 EP1229580A3 EP02100088A EP02100088A EP1229580A3 EP 1229580 A3 EP1229580 A3 EP 1229580A3 EP 02100088 A EP02100088 A EP 02100088A EP 02100088 A EP02100088 A EP 02100088A EP 1229580 A3 EP1229580 A3 EP 1229580A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrochemical
- copper
- copper seed
- reducing voids
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
- H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26585701P | 2001-02-01 | 2001-02-01 | |
| US265857 | 2001-02-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1229580A2 EP1229580A2 (de) | 2002-08-07 |
| EP1229580A3 true EP1229580A3 (de) | 2003-03-26 |
Family
ID=23012145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP02100088A Withdrawn EP1229580A3 (de) | 2001-02-01 | 2002-01-30 | Elektrochemische Reduktion von Kupferkeimschichten zur Reduzierung von Leerstellen in einer elektrochemischen Abscheidung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20020100693A1 (de) |
| EP (1) | EP1229580A3 (de) |
| JP (1) | JP2002289559A (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
| US7189647B2 (en) * | 2001-04-05 | 2007-03-13 | Novellus Systems, Inc. | Sequential station tool for wet processing of semiconductor wafers |
| US6852618B2 (en) * | 2001-04-19 | 2005-02-08 | Micron Technology, Inc. | Combined barrier layer and seed layer |
| JP3727277B2 (ja) | 2002-02-26 | 2005-12-14 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6849173B1 (en) * | 2002-06-12 | 2005-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Technique to enhance the yield of copper interconnections |
| US20040069651A1 (en) * | 2002-10-15 | 2004-04-15 | Applied Materials, Inc. | Oxide treatment and pressure control for electrodeposition |
| US6743719B1 (en) * | 2003-01-22 | 2004-06-01 | Texas Instruments Incorporated | Method for forming a conductive copper structure |
| US20070023912A1 (en) * | 2003-03-14 | 2007-02-01 | Acm Research, Inc. | Integrating metal with ultra low-k-dielectrics |
| US7253524B2 (en) * | 2003-11-25 | 2007-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnects |
| US7288479B2 (en) * | 2005-03-31 | 2007-10-30 | Tokyo Electron Limited | Method for forming a barrier/seed layer for copper metallization |
| JP4816052B2 (ja) * | 2005-12-13 | 2011-11-16 | 東京エレクトロン株式会社 | 半導体製造装置及び半導体装置の製造方法 |
| KR100966392B1 (ko) | 2008-05-26 | 2010-06-28 | 주식회사 동부하이텍 | 반도체 소자의 구리 배선 형성 방법 |
| US8882983B2 (en) | 2008-06-10 | 2014-11-11 | The Research Foundation For The State University Of New York | Embedded thin films |
| JP6576463B2 (ja) * | 2015-11-12 | 2019-09-18 | 三菱電機株式会社 | Ｃｕめっきの形成方法、および、Ｃｕめっき付き基板の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000007236A2 (en) * | 1998-07-31 | 2000-02-10 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
| US6071814A (en) * | 1998-09-28 | 2000-06-06 | Taiwan Semiconductor Manufacturing Company | Selective electroplating of copper for damascene process |
| US6177347B1 (en) * | 1999-07-02 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | In-situ cleaning process for Cu metallization |
| US6261953B1 (en) * | 2000-01-25 | 2001-07-17 | Kabushiki Kaisha Toshiba | Method of forming a copper oxide film to etch a copper surface evenly |
| US6348125B1 (en) * | 2000-01-17 | 2002-02-19 | Micron Technology, Inc. | Removal of copper oxides from integrated interconnects |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5167791A (en) * | 1991-12-20 | 1992-12-01 | Xerox Corporation | Process for electrolytic deposition of iron |
| DE19716493C2 (de) * | 1997-04-19 | 2001-11-29 | Aluminal Oberflaechentechnik | Verfahren zum elektrolytischen Beschichten von metallischen oder nichtmetallischen Endlosprodukten und Vorrichtung zur Durchführung des Verfahrens |
| TW593731B (en) * | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
-
2002
- 2002-01-10 JP JP2002003229A patent/JP2002289559A/ja active Pending
- 2002-01-30 EP EP02100088A patent/EP1229580A3/de not_active Withdrawn
- 2002-01-30 US US10/062,839 patent/US20020100693A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000007236A2 (en) * | 1998-07-31 | 2000-02-10 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
| US6071814A (en) * | 1998-09-28 | 2000-06-06 | Taiwan Semiconductor Manufacturing Company | Selective electroplating of copper for damascene process |
| US6177347B1 (en) * | 1999-07-02 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | In-situ cleaning process for Cu metallization |
| US6348125B1 (en) * | 2000-01-17 | 2002-02-19 | Micron Technology, Inc. | Removal of copper oxides from integrated interconnects |
| US6261953B1 (en) * | 2000-01-25 | 2001-07-17 | Kabushiki Kaisha Toshiba | Method of forming a copper oxide film to etch a copper surface evenly |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1229580A2 (de) | 2002-08-07 |
| US20020100693A1 (en) | 2002-08-01 |
| JP2002289559A (ja) | 2002-10-04 |
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Legal Events
| Date | Code | Title | Description |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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| AX | Request for extension of the european patent |
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| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: CHEN, LINLIN Inventor name: ROSE, DAVID J. Inventor name: LU, JIONG-PING |
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| PUAL | Search report despatched |
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| 17P | Request for examination filed |
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| AKX | Designation fees paid |
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| 17Q | First examination report despatched |
Effective date: 20031201 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
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| 18D | Application deemed to be withdrawn |
Effective date: 20040414 |