EP1345734A1 - Tampon de polissage en poly thyl ne r ticul destin polir de fa on chimico-mecanique, appareil et proc d de polissage - Google Patents

Tampon de polissage en poly thyl ne r ticul destin polir de fa on chimico-mecanique, appareil et proc d de polissage

Info

Publication number
EP1345734A1
EP1345734A1 EP01998427A EP01998427A EP1345734A1 EP 1345734 A1 EP1345734 A1 EP 1345734A1 EP 01998427 A EP01998427 A EP 01998427A EP 01998427 A EP01998427 A EP 01998427A EP 1345734 A1 EP1345734 A1 EP 1345734A1
Authority
EP
European Patent Office
Prior art keywords
polishing
recited
cross
linked polymer
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01998427A
Other languages
German (de)
English (en)
Other versions
EP1345734B1 (fr
Inventor
Yaw S. Obeng
Edward M. Yokley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
psiloQuest Inc
Original Assignee
psiloQuest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/000,101 external-priority patent/US6846225B2/en
Application filed by psiloQuest Inc filed Critical psiloQuest Inc
Priority claimed from PCT/US2001/044177 external-priority patent/WO2002043922A1/fr
Publication of EP1345734A1 publication Critical patent/EP1345734A1/fr
Application granted granted Critical
Publication of EP1345734B1 publication Critical patent/EP1345734B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Definitions

  • the present invention is directed to polishing pads 5 used for creating a smooth, ultra-flat surface on such items as glass, semiconductors, dielectric/metal composites, magnetic mass storage media and integrated circuits. More specifically, the present invention relates to the selective mechanical and chemical polishing 10 properties of a cross-linked polymer and its application to create pads suitable for polishing a substrate.
  • CMP Chemical-mechanical polishing
  • the first is the abrasive liquid slurry.
  • the abrasive liquid slurry's composition must be altered, and special formulations must be produced for each different substrate being polished. For example, some substrates require a high pH to be activated for polishing, while other substrates need a more acid environment. Still other substrates respond best to silica abrasives, while others require alumina or titanium abrasive particles .
  • the second critical consumable component in the CMP process is the polishing pad. It must be very flat, uniform across its entire surface, and resistant to the chemical nature of the slurry and have the right combination of stiffness and compressibility to minimize effects like dishing and erosion.
  • a third critical consumable component in the CMP process is the carrier film. The carrier film attaches the wafer to its rotating holder must be: adequately flat and uniform in its thickness; an adhesive that will hold it tightly to the carrier but not too tightly to the wafer; and immune to the chemical environment in which it works.
  • shallow trench isolation (STI) technology the trench is backfilled with oxide and the wafer is planarized using CMP. The result is a more planar structure than typically obtained using LOCOS, and the deeper trench (as compared with LOCOS) provides superior latch up immunity.
  • STI substrates have a much reduced "bird' s beak" effect and thus theoretically provide higher packing density for circuit elements on the chips.
  • Planarity in the metal layers is a common objective, and is promoted by using plug interlevel connections .
  • a preferred approach to plug formation is to blanket deposit a thick metal layer on the interlevel dielectric and into the interlevel windows, and then remove the excess using CMP.
  • CMP is used for polishing an oxide, such as Si0 2 , Ta 2 0 5 , W 2 0 5 . It can also be used to polish nitrides such as Si 3 N 4 , TaN, TiN, and conductor materials used for interlevel plugs, e . g. , Cu, , Ti, and TiN.
  • CMP metal chemical-mechanical polishing
  • an oxidant is used to convert the top metal to metal oxides .
  • metal oxides are subsequently abraded in si tu with some harder metal oxide abrasives. It certain applications, it is desirable to selectively polish such metal surfaces without removing the underlying nitride surface, for example. In such situations, selective metal polishing and precise end-point detection are desirable features.
  • areas dense in features i.e., alignment marks
  • oxide erosion This uncontrollable oxidation of the metals forming the alignment marks.
  • manufacturers have observed that oxide erosion in dense arrays increases dramatically as batch sizes are increased.
  • polishing pads are composed of stacked polyurethane based materials, containing a softer bottom structure and harder top surface used for polishing.
  • Two examples of such pads in wide commercial use include the IC1400TM and IC1000/SUBAIVTM, pads, manufactured by Rodel ® , Inc. (Phoenix, Az . ) .
  • Such polyurethane pads are subject to wear down and glazing due to hydrolysis during polishing, with consequent deleterious effects on the rate and uniformity of planarization. This in turn requires frequent reconditioning to restore the pad's surface properties, with a subsequent loss in productivity and increase in costs .
  • the present invention in one embodiment, provides a polishing pad comprising a polishing body comprising a material wherein said material is a cross-linked polymer.
  • the present invention provides a polishing apparatus.
  • This particular embodiment includes a mechanically driven carrier head, a polishing platen, and a polishing pad attached to the polishing platen.
  • the carrier head is positionable against the polishing platen to impart a polishing force against the polishing platen.
  • the polishing pad includes a polishing body comprising a material wherein the material is a cross-linked polymer.
  • Yet another embodiment provides a method of polishing a substrate.
  • the method comprises positioning a substrate having at least one layer of material located thereon against a polishing pad attached to a polishing apparatus wherein the polishing pad includes a polishing body comprising a cross-linked polymer; and polishing the layer of material against the polishing pad.
  • FIGURE 1 illustrates a polishing apparatus, including a polishing pad fabricated using a cross-linked polymer made according to the present invention
  • FIGURE 2 illustrates an exemplary contour plot of the depth of Copper removed during the polishing of a TEOS wafer having a layer of Copper and an underlying Ta barrier layer, using a pad (A32) fabricated using a cross-linked polymer according to the present invention, and a conventional polyurethane pad (IC1400) ;
  • FIGURE 3 illustrates an exemplary change in coefficient of friction determined during the polishing of a TEOS wafer having a layer of Copper and an underlying Ta barrier layer, using a pad (A32) fabricated using a cross- linked polymer according to the present invention, and a conventional polyurethane pad (IC1000/SUBA IV) .
  • polishing pads containing a polishing body comprised of a crossed-linked polymer have unexpected desirable polishing properties.
  • pads formed from such material are capable of uniformly and rapidly removing a metal surface, such as copper, with relatively much slower removal rates of an underlying tantalum barrier layer and the silicon wafer.
  • the cross-linked polymer may be made from a thermoplastic foam polymer.
  • the polishing pad may be made from a thermoplastic foam elastomer.
  • the cross-linked polymer has a closed cell structure.
  • the thermoplastic foam may include cross-linked polyolefins, such as polyethylene, polypropylene, and combinations thereof.
  • the crosslinked polymer may be a crosslinked polyethylene closed-cell foam such as VolaraTM, available from Merryweather Foam, Inc. (Anthony, NM) ; or AliplastTM, available JMS Plastics Supply, Inc. (Neptune, NJ) , or from Atlas International (Sacramento, CA) .
  • the cross-linked polymer of this invention may be fabricated by melt extrusion of the pellets into sheets, and then pads made by laser cutting, die cutting or similar process familiar to those skilled in the art of thermoplastic processing. Referring to FIGURE 1, these cross-linked polymers may then be incorporated into a polishing body 100 that includes a base pad 110, where a cross-linked polymer pad 120 forms a polishing surface located over the base pad 110.
  • a first adhesive material 130 such as epoxy or other materials well known to those skilled in the art, may be used to couple the base pad 110 to the cross-linked polymer pad 120.
  • the polishing pads thus formed may also have a second adhesive material 140, well known to those skilled in the art, applied to the platen side. The polishing pad may then be cleaned and packaged for use.
  • the polishing body 100 may then be employed in a variety of CMP processes by incorporation into a polishing apparatus 150.
  • the polishing apparatus 150 typically includes a mechanically driven carrier head 160, carrier ring 170, polishing platen 180, and a polishing pad that includes the polishing body 100 comprising the cross-linked polymer pad 120 of the present invention, attached to the polishing platen 180, optionally using the second adhesive 140.
  • the substrate to be polished 185 typically a wafer, may be attached to the carrier ring with the aid of a third adhesive 190 also well known to those skilled in the art.
  • the carrier head 160 is then positioned against the polishing platen 180 to impart a polishing force against the polishing platen 180, typically a repetitive, regular motion of the mechanically driven carrier head 160, while providing an appropriate slurry mixture well known to those skilled in the art.
  • substrates 185 may be polished by positioning the substrate 185, having at least one layer, on to the above-described polishing apparatus 150, and polishing the layer against the cross-linked polymer pad 120 of the present invention.
  • the substrate 185 has at least one layer of material that is a metal layer.
  • the metal layer is copper.
  • the substrate 185 is located on a semiconductor wafer.
  • Cross-linked polymer pads 120 of the present invention are particularly suited for polishing in shallow trench isolation (STI) in integrated circuit fabrication or other fabrication techniques where large areas of field oxide or other dielectrics must be removed from the wafer to produce a planar surface prior to subsequent processing.
  • the cross- linked polymer pad 120 of the present invention are also desirable for polishing interlevel plug materials such as W, Ti, Cu, Al, and other metals as well as nitrides or barrier materials such as Si 3 N 4 , TaN, TiN.
  • Another embodiment of the present invention includes a method to determine an endpoint for metal polishing.
  • the endpoint may be determined by detecting a change in the coefficient of friction or a change in an acoustic signal during substrate polishing using the cross-linked polymer pad 120 of the present invention associated with the transition from removing the metal layer to removing at least a portion of another layer.
  • Detection apparatus for determining changes in coefficient of friction or a change in an acoustic signal such as that described by CETR, Inc. (Campbell, CA) , may be used.
  • a polishing apparatus was prepared according to the present invention by including a polishing pad whose polishing body comprised a cross-linked polymer, attaching the pad to a polishing platen, and attaching the platen to a mechanically driven carrier head.
  • the cross-linked polymer used was Type 6A or Type 10 Aliplast ® (JMS Plastic Supplies, Neptune, N.J.). Both are cross-linked closed cell polyethylene foam having a medium density and hardness of about 34 Shore A (Type 6A) and about 60 Shore A (Type 10) .
  • the blanket Copper polishing properties of polishing pads incorporating these materials were compared to two commercially available pads: an IC1400 pad, and an IC1000/SUBA IV pad stack (both manufactured by Rodel, Phoenix, Az) in two experimental protocols .
  • Contour plots of copper surfaces polished using the IC 1400 versus the A32 pad were measured electrically by measuring sheet resistance at 49 points distributed radially across the wafer. Texture maps were generated using software obtained from ResMat® Corporation (Resmat map model 487; Montreal, Quebec, Canada). As illustrated in FIGURE 2, the depth of copper removed across the wafer using the IC 1400 pad ranged from 3000 to 6500 A, and from 2000 to 5500 A in a second experiment (not shown) . In contrast, the depth of copper removed using the A32 pad was more uniform, ranging from only 4000 to 5250 A.
  • the average and standard deviation for the removal rate of copper was compared for the IC1400 pad versus the A32 pad.
  • the copper removal rate and its standard deviation using the A32 pad was not significantly different than the removal rate obtained using the IC1400 pad (5446 ⁇ 760 and 5429 ⁇ 801 ⁇ / min, in two experiments) .
  • the A32 pad removed copper at a rate comparable to that of a commercial pad.
  • Polishing using the A32 pad was continued until the copper layer was entirely removed and the Ta layer was polished for an additional two minutes.
  • the thickness of Ta removed narrowly ranged from 75 to 175 A, and the average rate of removal over all 49 measurement points was only about 41 A / min.
  • polishing was continued until the entire Ta layer was removed, and the underlying TEOS wafer was polished.
  • the removal rate of the TEOS was about 45 A / min.
  • the removal rate increased from 3416 ⁇ 875 A / min, with a down force of 3 psi, to 6826 + 491 A / min, with a down force of 5 psi.
  • the removal rate was relatively invariant at different table speeds.
  • the removal rate increased slightly from 3416 + 875 A / min with a table speed of 40 rm, to 4452 + 730 A / min with a table speed of 80.
  • the blanket copper polishing properties of the A32 pad was compared to the IC1000/SUBA IV pad stack.
  • the comparison was performed using a Model PMT-A CMP tester (CETR, Inc., Campbell, Ca.) , operated with a down force of 3 psi and table speed of 200 rpm.
  • the PMT-A CMP tester was equipped with both a coefficient of friction and an acoustic signal detector.
  • TEOS wafers having a 16,000 A thick copper surface and underlying 300 A thick tantalum barrier layer were used.
  • the coefficient of friction measured by the tester was more uniform compared to the IC1000/SUBA IV pad stack. Moreover, during a 300 second polishing period, the IC1000/SUBA IV pad never completely removed the Copper layer, whereas the A32 pad removed the Cu layer in about 220 s, as determined by an increase the coefficient of friction when the Ta layer was reached (FIGURE 3) , or as similarly determined by an decrease in the acoustic signal

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne, en général, un procédé de polissage d'une surface sur des substrats, tels que des plaquettes de semi-conducteur et, plus particulièrement, un tampon de polissage à cet effet. Ce tampon de polissage comprend un corps de polissage comportant un matériau polymère réticulé, et peut être incorporé dans un appareil de polissage. Le polissage consiste à positionner le substrat possédant au moins une couche contre le corps de polissage et à polir ladite couche.
EP01998427A 2000-11-29 2001-11-27 Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage Expired - Lifetime EP1345734B1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US25029900P 2000-11-29 2000-11-29
US250299P 2000-11-29
US30437501P 2001-07-10 2001-07-10
US304375P 2001-07-10
US10/000,101 US6846225B2 (en) 2000-11-29 2001-10-24 Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
PCT/US2001/044177 WO2002043922A1 (fr) 2000-11-29 2001-11-27 Tampon de polissage en polyéthylène réticulé destiné à polir de façon chimico-mecanique, appareil et procédé de polissage
2003-03-28

Publications (2)

Publication Number Publication Date
EP1345734A1 true EP1345734A1 (fr) 2003-09-24
EP1345734B1 EP1345734B1 (fr) 2006-04-19

Family

ID=27356605

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01998427A Expired - Lifetime EP1345734B1 (fr) 2000-11-29 2001-11-27 Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage

Country Status (4)

Country Link
EP (1) EP1345734B1 (fr)
CN (1) CN1484566A (fr)
AU (1) AU2002217867A1 (fr)
DE (1) DE60118963T2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110269380A1 (en) * 2010-05-03 2011-11-03 Iv Technologies Co., Ltd. Base layer, polishing pad including the same and polishing method
RU213815U1 (ru) * 2022-07-04 2022-09-29 Иван Александрович Антонов Сменная накладка для устройств для маникюра и педикюра

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102554764A (zh) * 2012-02-15 2012-07-11 蔡桂芳 适用于超长超薄石英板的研磨抛光机及研磨抛光方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10456886B2 (en) 2016-01-19 2019-10-29 Applied Materials, Inc. Porous chemical mechanical polishing pads
US20180134918A1 (en) * 2016-11-11 2018-05-17 Jh Rhodes Company, Inc. Soft polymer-based material polishing media
KR101945874B1 (ko) * 2017-08-07 2019-02-11 에스케이씨 주식회사 표면 처리된 연마패드용 윈도우 및 이를 포함하는 연마패드
CN116749093B (zh) * 2023-08-11 2023-11-07 太原理工大学 磁性磨具的制备工艺及基于磁性磨具的细长管内抛光装置
CN117840840B (zh) * 2024-03-08 2024-05-07 常州臻晶半导体有限公司 一种兆声辅助大直径碳化硅晶片检测设备及其检测方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0243922A1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110269380A1 (en) * 2010-05-03 2011-11-03 Iv Technologies Co., Ltd. Base layer, polishing pad including the same and polishing method
RU213815U1 (ru) * 2022-07-04 2022-09-29 Иван Александрович Антонов Сменная накладка для устройств для маникюра и педикюра

Also Published As

Publication number Publication date
EP1345734B1 (fr) 2006-04-19
AU2002217867A1 (en) 2002-06-11
DE60118963T2 (de) 2006-12-21
CN1484566A (zh) 2004-03-24
DE60118963D1 (de) 2006-05-24

Similar Documents

Publication Publication Date Title
EP1345734B1 (fr) Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage
JP6030703B2 (ja) 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
EP1295322B1 (fr) Procede de polissage mecano-chimique en deux etapes
US6846225B2 (en) Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
US5916011A (en) Process for polishing a semiconductor device substrate
US20030013387A1 (en) Barrier removal at low polish pressure
US8133096B2 (en) Multi-phase polishing pad
US20010055880A1 (en) Barrier layer buffing after cu cmp
CN114621686A (zh) 用于化学机械平面化组合物的复合磨料颗粒及其使用方法
KR20000058021A (ko) 화학적 기계적 연마 처리 및 부품
HK1044504A1 (en) Method of modifying a surface of a structured wafer
JP2003514061A5 (fr)
EP1147546A1 (fr) Procede de diminution de la vitesse de creusage pendant le processus de planarisation chimico-mecanique de structures a semi-conducteurs metalliques
US6312321B1 (en) Polishing apparatus
WO2008103549A2 (fr) Pâtes à auto-arrêt pour polissage chimique mécanique de dioxyde de silicium diélectrique topographique
US6391779B1 (en) Planarization process
US10562149B2 (en) Polyurethane CMP pads having a high modulus ratio
KR20050107760A (ko) 웨이퍼 연마 및 패드 컨디셔닝 방법
JP7804507B2 (ja) 研磨レートが向上したｃｍｐ研磨パッド
WO2002043922A1 (fr) Tampon de polissage en polyéthylène réticulé destiné à polir de façon chimico-mecanique, appareil et procédé de polissage
JP2004128112A (ja) 半導体装置の製造方法
US6368969B1 (en) Chemical-mechanical polishing methods
US6080671A (en) Process of chemical-mechanical polishing and manufacturing an integrated circuit
See et al. 1, 2,* K. Goh,'F. Chen,'S Balakumar, 2G. Higelin

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030526

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

RBV Designated contracting states (corrected)

Designated state(s): AT BE DE FR

17Q First examination report despatched

Effective date: 20040421

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RTI1 Title (correction)

Free format text: CROSSLINKED POLYETHYLENE POLISHING PAD FOR CHEMICAL-MECHNICAL POLISHING AND POLISHING APPARATUS

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

RBV Designated contracting states (corrected)

Designated state(s): DE FR

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR

REF Corresponds to:

Ref document number: 60118963

Country of ref document: DE

Date of ref document: 20060524

Kind code of ref document: P

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20061120

Year of fee payment: 6

ET Fr: translation filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20070126

Year of fee payment: 6

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20070122

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080603

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20080930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20071130