EP1377993A1 - Procede pour definir des magnetisations de reference dans des systemes de couches - Google Patents

Procede pour definir des magnetisations de reference dans des systemes de couches

Info

Publication number
EP1377993A1
EP1377993A1 EP02761865A EP02761865A EP1377993A1 EP 1377993 A1 EP1377993 A1 EP 1377993A1 EP 02761865 A EP02761865 A EP 02761865A EP 02761865 A EP02761865 A EP 02761865A EP 1377993 A1 EP1377993 A1 EP 1377993A1
Authority
EP
European Patent Office
Prior art keywords
layer
hard
resistor
magnetic field
cooled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02761865A
Other languages
German (de)
English (en)
Inventor
Oliver De Haas
Rudolf Schäfer
Claus Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Original Assignee
Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV filed Critical Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Publication of EP1377993A1 publication Critical patent/EP1377993A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H01F41/304—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field

Definitions

  • the invention relates to the field of materials technology and relates to a method for defining reference magnetizations, which is used, for example, in components in magnetic sensors or spin electronics, such as e.g. could be used in GMR sensors or MRAM memory cells.
  • armature layer can consist of a hard magnet, a natural or artificial antiferromagnet.
  • the magnetization direction of the ferromagnetic layer is spatially fixed by the exchange coupling between the ferromagnet and the armature layer.
  • This anchor layer itself must also be magnetically aligned. Depending on the material properties of the anchor layer, the following methods have been used to date:
  • the object of the present invention is to provide a method for determining reference magnetizations in layer systems, the reference directions in terms of number and spatial direction being arbitrary.
  • At least one hard and / or soft magnetic layer is produced by geometrically structuring a hard and / or soft magnetic layer and before or during or after a one- or multi-stage heat treatment and / or soft magnetic layer is brought into direct contact with at least one antiferromagnetic layer.
  • the heat treatment is carried out with an increase in temperature at least up to above the coupling temperature.
  • the layer system is then cooled.
  • the layer system is advantageously cooled without applying a magnetic field, so that the demagnetized state or the remanent state is impressed as reference magnetization without being disturbed.
  • the layers are advantageously produced with lateral dimensions in the micro and nanometer range and layer thicknesses in the nanometer range.
  • a hard and / or soft magnetic layer is initially structured geometrically. This can be done using methods known from microelectronics, such as, for example, lithographic methods. This geometric structuring determines the shape, number and arrangement of these geometric elements in relation to one another. This process step has a significant influence on the direction of magnetization of the hard and / or soft magnetic layer, since the choice of the geometric shape according to the principle found by van den Berg determines the direction of magnetization within the respective shape. Domains form within a shape, the magnetization of which is aligned parallel to the nearest edge. Alternatively, the stray field interaction of neighboring elements can be used to form desired domain patterns.
  • any number of reference directions and any number of different reference directions can thus be produced in one layer system by number, shape and / or arrangement with respect to one another.
  • the heating above the coupling temperature means that the magnetization configurations can be set in the hard and / or soft magnetic layer that is free due to the temperature increase in accordance with the domain elements.
  • the antiferromagnetic layer takes over the magnetization configuration of the hard and / or soft magnetic layer.
  • the layer system thus has a uniform magnetization configuration.
  • the hard and / or soft magnetic layer it is also possible for the hard and / or soft magnetic layer to be subjected to the heat treatment alone and to be applied to an antiferromagnetic layer only during or after cooling.
  • the antiferromagnetic layer takes over the magnetization configuration of the hard and / or soft magnetic layer.
  • the hard and / or soft magnetic layer is applied or can only be applied after the production of the antiferromagnetic layer, its structuring can take place, for example, by means of an interchangeable mask process or lithographically controlled ion etching.
  • the magnetization of the antiferromagnet is not determined by an applied magnetic field, but by the magnetization of the exchange-coupled ferromagnetic layer.
  • a magnetic field during the heat treatment can favor the setting of the pattern as described by van den Berg.
  • a sufficiently strong DC magnetic field can specifically cause remanent magnetization states.
  • Another advantage of the method according to the invention is that the domain patterns of the hard and / or soft magnetic layer are retained even at higher temperatures and thus the method with the Temperature treatment for generating an antiferromagnetic state, such as PtMn and similar substances, is compatible.
  • the reference magnetizations established by the method according to the invention can be regenerated (self-healing). This can only be achieved by reheating the layer composite above the coupling temperature. Destroyed magnetizations above the coupling temperature are thus reset and can serve as reference magnetizations again after cooling.
  • the method according to the invention can be used well in the miniaturization of magnetoelectronic components, since it can be used over a wide scaling range.
  • a reliable determination of the reference magnetization can be achieved in particular in the submicron range.
  • FIG. 1 shows a typical magnetization configuration of a ferromagnetic layer and an antiferromagnetic layer a) before a heat treatment b) at T> TB, with a TB coupling temperature c) after a heat treatment
  • Fig. 2 is a nuclear microscope image of 4 ellipsoidally structured
  • perpendicular reference magnetizations are required.
  • a 10 nm thick FeMn layer is first deposited on silicon as an anchor layer and then a 100 nm thick ferromagnetic Ni ⁇ iFeig layer is deposited.
  • squares with an edge length of 24 ⁇ m are structured.
  • the ferromagnetic layer must be completely removed outside the structure.
  • the heat treatment takes place at 200 ° C.
  • the sample is demagnetized in a decaying magnetic field with a maximum amplitude of 1 kA / cm and then cooled to room temperature without the influence of a magnetic field.
  • the layer system now shows a stable magnetization configuration as shown in Fig. 1.
  • Magnetoresistive magnetic field sensors are advantageously implemented in a Wheatson bridge circuit.
  • reference magnetizations that are antiparallel to each other are required.
  • a double layer consisting of 10 nm FeMn and 100 nm Ni 8 ⁇ Fei 9 is dusted on a silicon substrate.
  • a homogeneous magnetic field with a strength of 240 A / cm is present during the layer deposition.
  • 4 elements of an ellipse-like shape with the lateral dimensions of 100 ⁇ m x 20 ⁇ m are structured. The elements are aligned parallel to each other and to the field direction during the layer deposition and are next to each other with a distance of 30 ⁇ m.
  • the heat treatment takes place at 200 ° C.
  • the sample is demagnetized in a decaying field of maximum amplitude of 1 kA / cm, which is aligned diagonally to the element axis and then cooled to room temperature without the influence of a magnetic field.
  • the layer system now shows a stable magnetization configuration, as shown in Fig. 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention se rapporte au domaine de la technique des matériaux et concerne un procédé pour définir des magnétisations de référence, ce procédé pouvant trouver par exemple des applications dans les composants de capteurs magnétiques. L'objectif de l'invention est de mettre au point un procédé pour définir des magnétisations de référence dans des systèmes de couches, les directions de référence pouvant être choisies arbitrairement du point de vue du nombre et de la direction dans l'espace. A cet effet, on fait appel à un procédé pour définir des magnétisations de référence dans des systèmes de couches selon lequel au moins un système de couches est produit par structuration géométrique d'une couche magnétique dure et/ou douce et par application de cette couche magnétique dure et/ou douce sur au moins une couche antiferromagnétique avant, pendant ou après un traitement thermique à une ou plusieurs étapes, la température étant augmentée au moins jusqu'à une température supérieure à la température de liaison et le système de couches étant ensuite refroidi.
EP02761865A 2001-04-12 2002-04-05 Procede pour definir des magnetisations de reference dans des systemes de couches Withdrawn EP1377993A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10119381 2001-04-12
DE10119381 2001-04-12
PCT/DE2002/001302 WO2002084680A1 (fr) 2001-04-12 2002-04-05 Procede pour definir des magnetisations de reference dans des systemes de couches

Publications (1)

Publication Number Publication Date
EP1377993A1 true EP1377993A1 (fr) 2004-01-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP02761865A Withdrawn EP1377993A1 (fr) 2001-04-12 2002-04-05 Procede pour definir des magnetisations de reference dans des systemes de couches

Country Status (4)

Country Link
EP (1) EP1377993A1 (fr)
JP (1) JP2004523928A (fr)
DE (1) DE10215506A1 (fr)
WO (1) WO2002084680A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032483A1 (de) * 2004-07-05 2006-01-26 Infineon Technologies Ag Verfahren zum Erzeugen einer lokalen Magnetisierung und Bauelement
US7635974B2 (en) * 2007-05-02 2009-12-22 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) based magnetic field angle sensor
DE102007040183A1 (de) * 2007-08-25 2009-03-05 Sensitec Naomi Gmbh Magnetfeldsensor zur Erfassung eines äußeren magnetischen Felds, insbesondere des Erdmagnetfelds, sowie mit solchen Magnetfeldsensoren gebildetes Magnetfeldsensorsystem
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
EP3300534B1 (fr) 2015-06-05 2020-11-11 Allegro MicroSystems, LLC Élément de magnétorésistance à vanne de spin à réponse améliorée aux champs magnétiques
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074658A (ja) * 1996-06-28 1998-03-17 Victor Co Of Japan Ltd スピンバルブ磁気抵抗効果素子の製造方法
JP3456409B2 (ja) * 1998-03-23 2003-10-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02084680A1 *

Also Published As

Publication number Publication date
DE10215506A1 (de) 2002-10-24
WO2002084680A1 (fr) 2002-10-24
JP2004523928A (ja) 2004-08-05

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