EP1397828A4 - ELECTROLYTIC PROCESSING DEVICE AND SUBSTRATE PROCESSING DEVICE - Google Patents

ELECTROLYTIC PROCESSING DEVICE AND SUBSTRATE PROCESSING DEVICE

Info

Publication number
EP1397828A4
EP1397828A4 EP02700668A EP02700668A EP1397828A4 EP 1397828 A4 EP1397828 A4 EP 1397828A4 EP 02700668 A EP02700668 A EP 02700668A EP 02700668 A EP02700668 A EP 02700668A EP 1397828 A4 EP1397828 A4 EP 1397828A4
Authority
EP
European Patent Office
Prior art keywords
processing device
electrolytic
substrate processing
substrate
electrolytic processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02700668A
Other languages
German (de)
French (fr)
Other versions
EP1397828A1 (en
Inventor
Itsuki Kobata
Mitsuhiko Shirakashi
Masayuki Kumekawa
Takayuki Saito
Yasushi Toma
Tsukuru Suzuki
Kaoru Yamada
Yuji Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to EP06019257A priority Critical patent/EP1777736A1/en
Publication of EP1397828A1 publication Critical patent/EP1397828A1/en
Publication of EP1397828A4 publication Critical patent/EP1397828A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP02700668A 2001-06-18 2002-02-21 ELECTROLYTIC PROCESSING DEVICE AND SUBSTRATE PROCESSING DEVICE Withdrawn EP1397828A4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06019257A EP1777736A1 (en) 2001-06-18 2002-02-21 Electrolytic processing device and substrate processing apparatus

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001183822 2001-06-18
JP2001183822 2001-06-18
JP2001264368 2001-08-31
JP2001264368 2001-08-31
JP2001401436A JP4043234B2 (en) 2001-06-18 2001-12-28 Electrolytic processing apparatus and substrate processing apparatus
JP2001401436 2001-12-28
PCT/JP2002/001545 WO2002103771A1 (en) 2001-06-18 2002-02-21 Electrolytic processing device and substrate processing apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP06019257A Division EP1777736A1 (en) 2001-06-18 2002-02-21 Electrolytic processing device and substrate processing apparatus

Publications (2)

Publication Number Publication Date
EP1397828A1 EP1397828A1 (en) 2004-03-17
EP1397828A4 true EP1397828A4 (en) 2007-04-11

Family

ID=27346971

Family Applications (2)

Application Number Title Priority Date Filing Date
EP06019257A Withdrawn EP1777736A1 (en) 2001-06-18 2002-02-21 Electrolytic processing device and substrate processing apparatus
EP02700668A Withdrawn EP1397828A4 (en) 2001-06-18 2002-02-21 ELECTROLYTIC PROCESSING DEVICE AND SUBSTRATE PROCESSING DEVICE

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP06019257A Withdrawn EP1777736A1 (en) 2001-06-18 2002-02-21 Electrolytic processing device and substrate processing apparatus

Country Status (7)

Country Link
US (1) US20030132103A1 (en)
EP (2) EP1777736A1 (en)
JP (1) JP4043234B2 (en)
KR (1) KR100849202B1 (en)
CN (1) CN100449705C (en)
TW (1) TW592858B (en)
WO (1) WO2002103771A1 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW592859B (en) 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
JP4409807B2 (en) * 2002-01-23 2010-02-03 株式会社荏原製作所 Substrate processing method
TWI224531B (en) 2001-09-11 2004-12-01 Ebara Corp Substrate processing apparatus and method
CN100346008C (en) * 2001-11-29 2007-10-31 株式会社荏原制作所 Method and apparatus for regenerating ion exchanger and electrolytic processor
US20050051432A1 (en) * 2001-12-13 2005-03-10 Mitsuhiko Shirakashi Electrolytic processing apparatus and method
JP2003205428A (en) * 2002-01-08 2003-07-22 Ebara Corp Electro-chemical machining apparatus, and method
TWI277473B (en) * 2002-01-31 2007-04-01 Ebara Corp Electrolytic processing apparatus and method, fixing method, fixing structure for ion exchanging member
WO2004041467A1 (en) * 2002-11-08 2004-05-21 Ebara Corporation Electrochemical machining device and electrochemical machining method
US7563356B2 (en) * 2003-03-19 2009-07-21 Ebara Corporation Composite processing apparatus and method
US7476303B2 (en) * 2003-08-11 2009-01-13 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7527723B2 (en) 2004-01-16 2009-05-05 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
WO2005083159A2 (en) * 2004-02-23 2005-09-09 E.I. Dupont De Nemours & Company Apparatus adapted for membrane mediated electropolishing
WO2005090648A2 (en) * 2004-03-19 2005-09-29 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
ATE527907T1 (en) * 2004-04-23 2011-10-15 Panasonic Elec Works Co Ltd FAN HEATER WITH ELECTROSTATIC ATOMIZER
US8075745B2 (en) * 2004-11-29 2011-12-13 Semiquest Inc. Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US7368042B2 (en) 2004-12-30 2008-05-06 United Microelectronics Corp. Electroplating apparatus including a real-time feedback system
JP5436770B2 (en) * 2007-11-30 2014-03-05 三菱レイヨン株式会社 Conductive polishing pad and manufacturing method thereof
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
CN103866374B (en) * 2012-12-12 2017-06-06 诺发系统公司 Electrolyte hydrodynamic enhancements for efficient mass transfer during electroplating
SG11201509673SA (en) * 2013-06-17 2016-01-28 Applied Materials Inc Method for copper plating through silicon vias using wet wafer back contact
CN105529278B (en) * 2014-09-29 2019-08-16 盛美半导体设备（上海）有限公司 Process the device of semiconductor structure
US9935004B2 (en) 2016-01-21 2018-04-03 Applied Materials, Inc. Process and chemistry of plating of through silicon vias
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
CN108608080B (en) * 2016-12-12 2020-03-17 财团法人金属工业研究发展中心 Induction type electrochemical machining device and machining method thereof
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
US11107707B2 (en) 2018-11-26 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wet etch apparatus and method of using the same
WO2020166677A1 (en) 2019-02-13 2020-08-20 株式会社トクヤマ Onium salt-containing processing solution for semiconductor wafers
TWI831852B (en) * 2019-10-24 2024-02-11 香港商亞洲電鍍器材有限公司 A fluid delivery system and a method of electroplating a workpiece
JP7422586B2 (en) * 2020-03-30 2024-01-26 東京エレクトロン株式会社 Substrate processing equipment and substrate processing method
CN120734457A (en) * 2021-07-23 2025-10-03 深圳市星宏精密电解科技有限公司 Angle-driven electric pulse vibration device for electrolytic machining
EP4364890B1 (en) * 2022-11-03 2025-07-02 Hangzhou Sizone Electronic Technology Inc. Electrochemical mechanical polishing and planarization equipment for processing conductive wafer substrate
JP2025068434A (en) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス Substrate Processing Equipment
JP2025068436A (en) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing device
JP2025068435A (en) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing device
KR102802910B1 (en) * 2024-09-02 2025-04-30 울산대학교 산학협력단 Nanofluid wet cleansing method for wafer and cleansing device applying the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883383A (en) * 1966-09-21 1975-05-13 Ionics Method of fabricating embossed membranes
DE4402596A1 (en) * 1994-01-28 1995-08-10 Atotech Deutschland Gmbh Electrolytic process in horizontal continuous systems and device for carrying it out
JP2000144467A (en) * 1998-11-11 2000-05-26 Asahi Chem Ind Co Ltd Electrolytic cell
WO2000034995A1 (en) * 1998-12-07 2000-06-15 Japan Science And Technology Corporation Method for machining/cleaning by hydroxide ion in ultrapure water
EP1029954A1 (en) * 1998-09-08 2000-08-23 Ebara Corporation Substrate plating device
EP1079003A2 (en) * 1999-08-27 2001-02-28 Yuzo Mori Electrolytic machining method and apparatus
EP1170083A2 (en) * 2000-07-05 2002-01-09 Ebara Corporation Electrochemical machining method and apparatus
EP1179617A1 (en) * 1999-12-24 2002-02-13 Ebara Corporation Apparatus for plating substrate, method for plating substrate, electrolytic processing method, and apparatus thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258109A (en) * 1991-03-29 1993-11-02 Vaughan Daniel J Electrodialytic conversion of complexes and salts of metal cations
JPH06315830A (en) * 1993-05-07 1994-11-15 Hitachi Zosen Corp Beveling method for cut-resistant material
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP3942282B2 (en) * 1998-08-06 2007-07-11 勇蔵 森 Polishing method and apparatus
JP2000150611A (en) * 1998-11-06 2000-05-30 Canon Inc Sample processing system
JP4513145B2 (en) * 1999-09-07 2010-07-28 ソニー株式会社 Semiconductor device manufacturing method and polishing method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883383A (en) * 1966-09-21 1975-05-13 Ionics Method of fabricating embossed membranes
DE4402596A1 (en) * 1994-01-28 1995-08-10 Atotech Deutschland Gmbh Electrolytic process in horizontal continuous systems and device for carrying it out
EP1029954A1 (en) * 1998-09-08 2000-08-23 Ebara Corporation Substrate plating device
JP2000144467A (en) * 1998-11-11 2000-05-26 Asahi Chem Ind Co Ltd Electrolytic cell
WO2000034995A1 (en) * 1998-12-07 2000-06-15 Japan Science And Technology Corporation Method for machining/cleaning by hydroxide ion in ultrapure water
EP1139400A1 (en) * 1998-12-07 2001-10-04 Japan Science and Technology Corporation Method for machining/cleaning by hydroxide ion in ultrapure water
EP1079003A2 (en) * 1999-08-27 2001-02-28 Yuzo Mori Electrolytic machining method and apparatus
EP1179617A1 (en) * 1999-12-24 2002-02-13 Ebara Corporation Apparatus for plating substrate, method for plating substrate, electrolytic processing method, and apparatus thereof
EP1170083A2 (en) * 2000-07-05 2002-01-09 Ebara Corporation Electrochemical machining method and apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02103771A1 *

Also Published As

Publication number Publication date
TW592858B (en) 2004-06-21
JP4043234B2 (en) 2008-02-06
KR20030031908A (en) 2003-04-23
US20030132103A1 (en) 2003-07-17
CN1463467A (en) 2003-12-24
EP1777736A1 (en) 2007-04-25
WO2002103771A1 (en) 2002-12-27
CN100449705C (en) 2009-01-07
JP2003145354A (en) 2003-05-20
KR100849202B1 (en) 2008-07-31
EP1397828A1 (en) 2004-03-17

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Legal Events

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Effective date: 20070309

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/306 20060101AFI20030107BHEP

Ipc: C25D 17/00 20060101ALI20070305BHEP

Ipc: C25D 7/12 20060101ALI20070305BHEP

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Effective date: 20091006