EP1397828A4 - Dispositif de traitement electrolytique et appareil de traitement de substrat - Google Patents

Dispositif de traitement electrolytique et appareil de traitement de substrat

Info

Publication number
EP1397828A4
EP1397828A4 EP02700668A EP02700668A EP1397828A4 EP 1397828 A4 EP1397828 A4 EP 1397828A4 EP 02700668 A EP02700668 A EP 02700668A EP 02700668 A EP02700668 A EP 02700668A EP 1397828 A4 EP1397828 A4 EP 1397828A4
Authority
EP
European Patent Office
Prior art keywords
processing device
electrolytic
substrate processing
substrate
electrolytic processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02700668A
Other languages
German (de)
English (en)
Other versions
EP1397828A1 (fr
Inventor
Itsuki Kobata
Mitsuhiko Shirakashi
Masayuki Kumekawa
Takayuki Saito
Yasushi Toma
Tsukuru Suzuki
Kaoru Yamada
Yuji Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to EP06019257A priority Critical patent/EP1777736A1/fr
Publication of EP1397828A1 publication Critical patent/EP1397828A1/fr
Publication of EP1397828A4 publication Critical patent/EP1397828A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP02700668A 2001-06-18 2002-02-21 Dispositif de traitement electrolytique et appareil de traitement de substrat Withdrawn EP1397828A4 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06019257A EP1777736A1 (fr) 2001-06-18 2002-02-21 Dispositif de traitement électrolytique et appareil de traitement de substrat

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001183822 2001-06-18
JP2001183822 2001-06-18
JP2001264368 2001-08-31
JP2001264368 2001-08-31
JP2001401436A JP4043234B2 (ja) 2001-06-18 2001-12-28 電解加工装置及び基板処理装置
JP2001401436 2001-12-28
PCT/JP2002/001545 WO2002103771A1 (fr) 2001-06-18 2002-02-21 Dispositif de traitement electrolytique et appareil de traitement de substrat

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP06019257A Division EP1777736A1 (fr) 2001-06-18 2002-02-21 Dispositif de traitement électrolytique et appareil de traitement de substrat

Publications (2)

Publication Number Publication Date
EP1397828A1 EP1397828A1 (fr) 2004-03-17
EP1397828A4 true EP1397828A4 (fr) 2007-04-11

Family

ID=27346971

Family Applications (2)

Application Number Title Priority Date Filing Date
EP06019257A Withdrawn EP1777736A1 (fr) 2001-06-18 2002-02-21 Dispositif de traitement électrolytique et appareil de traitement de substrat
EP02700668A Withdrawn EP1397828A4 (fr) 2001-06-18 2002-02-21 Dispositif de traitement electrolytique et appareil de traitement de substrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP06019257A Withdrawn EP1777736A1 (fr) 2001-06-18 2002-02-21 Dispositif de traitement électrolytique et appareil de traitement de substrat

Country Status (7)

Country Link
US (1) US20030132103A1 (fr)
EP (2) EP1777736A1 (fr)
JP (1) JP4043234B2 (fr)
KR (1) KR100849202B1 (fr)
CN (1) CN100449705C (fr)
TW (1) TW592858B (fr)
WO (1) WO2002103771A1 (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW592859B (en) 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
JP4409807B2 (ja) * 2002-01-23 2010-02-03 株式会社荏原製作所 基板処理方法
TWI224531B (en) 2001-09-11 2004-12-01 Ebara Corp Substrate processing apparatus and method
CN100346008C (zh) * 2001-11-29 2007-10-31 株式会社荏原制作所 用于再生离子交换剂的方法与设备以及电解处理装置
US20050051432A1 (en) * 2001-12-13 2005-03-10 Mitsuhiko Shirakashi Electrolytic processing apparatus and method
JP2003205428A (ja) * 2002-01-08 2003-07-22 Ebara Corp 電解加工装置及び方法
TWI277473B (en) * 2002-01-31 2007-04-01 Ebara Corp Electrolytic processing apparatus and method, fixing method, fixing structure for ion exchanging member
WO2004041467A1 (fr) * 2002-11-08 2004-05-21 Ebara Corporation Dispositif d'usinage electrochimique et procede d'usinage electrochimique
US7563356B2 (en) * 2003-03-19 2009-07-21 Ebara Corporation Composite processing apparatus and method
US7476303B2 (en) * 2003-08-11 2009-01-13 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7527723B2 (en) 2004-01-16 2009-05-05 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
WO2005083159A2 (fr) * 2004-02-23 2005-09-09 E.I. Dupont De Nemours & Company Appareil de polissage electrolytique mettant en oeuvre une membrane
WO2005090648A2 (fr) * 2004-03-19 2005-09-29 Ebara Corporation Appareil de traitement électrolytique et procédé de traitement électrolytique
ATE527907T1 (de) * 2004-04-23 2011-10-15 Panasonic Elec Works Co Ltd Gebläseheizung mit elektrostatischem zerstäuber
US8075745B2 (en) * 2004-11-29 2011-12-13 Semiquest Inc. Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US7368042B2 (en) 2004-12-30 2008-05-06 United Microelectronics Corp. Electroplating apparatus including a real-time feedback system
JP5436770B2 (ja) * 2007-11-30 2014-03-05 三菱レイヨン株式会社 導電性研磨パッドおよびその製造方法
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
CN103866374B (zh) * 2012-12-12 2017-06-06 诺发系统公司 电镀过程中用于高效传质的电解液流体动力的增强装置
SG11201509673SA (en) * 2013-06-17 2016-01-28 Applied Materials Inc Method for copper plating through silicon vias using wet wafer back contact
CN105529278B (zh) * 2014-09-29 2019-08-16 盛美半导体设备（上海）有限公司 加工半导体结构的装置
US9935004B2 (en) 2016-01-21 2018-04-03 Applied Materials, Inc. Process and chemistry of plating of through silicon vias
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
CN108608080B (zh) * 2016-12-12 2020-03-17 财团法人金属工业研究发展中心 感应式电化学加工装置及其加工方法
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
US11107707B2 (en) 2018-11-26 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wet etch apparatus and method of using the same
WO2020166677A1 (fr) 2019-02-13 2020-08-20 株式会社トクヤマ Solution de traitement contenant un sel d'onium pour tranches de semi-conducteur
TWI831852B (zh) * 2019-10-24 2024-02-11 香港商亞洲電鍍器材有限公司 流體輸送系統及電鍍工件的方法
JP7422586B2 (ja) * 2020-03-30 2024-01-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN120734457A (zh) * 2021-07-23 2025-10-03 深圳市星宏精密电解科技有限公司 一种电解加工用角度驱动式电脉冲振动装置
EP4364890B1 (fr) * 2022-11-03 2025-07-02 Hangzhou Sizone Electronic Technology Inc. Équipement de polissage et de planarisation électrochimique mécanique pour le traitement d'un substrat de tranche conductrice
JP2025068434A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2025068436A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2025068435A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102802910B1 (ko) * 2024-09-02 2025-04-30 울산대학교 산학협력단 나노 유체 습식 웨이퍼 세정 방법 및 이를 적용한 세정 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883383A (en) * 1966-09-21 1975-05-13 Ionics Method of fabricating embossed membranes
DE4402596A1 (de) * 1994-01-28 1995-08-10 Atotech Deutschland Gmbh Elektrolytisches Verfahren in horizontalen Durchlaufanlagen und Vorrichtung zur Durchführung desselben
JP2000144467A (ja) * 1998-11-11 2000-05-26 Asahi Chem Ind Co Ltd 電解槽
WO2000034995A1 (fr) * 1998-12-07 2000-06-15 Japan Science And Technology Corporation Procede d'usinage/nettoyage avec des ions hydroxyde dans de l'eau ultrapure
EP1029954A1 (fr) * 1998-09-08 2000-08-23 Ebara Corporation Dispositif de plaquage de substrats
EP1079003A2 (fr) * 1999-08-27 2001-02-28 Yuzo Mori Méthode et appareil pour usinage électrolytique
EP1170083A2 (fr) * 2000-07-05 2002-01-09 Ebara Corporation Procédé et appareil d'usinage électrochimique
EP1179617A1 (fr) * 1999-12-24 2002-02-13 Ebara Corporation Appareil et procede de placage de substrat, et appareil et procede de traitement electrolytique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258109A (en) * 1991-03-29 1993-11-02 Vaughan Daniel J Electrodialytic conversion of complexes and salts of metal cations
JPH06315830A (ja) * 1993-05-07 1994-11-15 Hitachi Zosen Corp 難削材のベベリング加工方法
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP3942282B2 (ja) * 1998-08-06 2007-07-11 勇蔵 森 ポリッシング方法及び装置
JP2000150611A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883383A (en) * 1966-09-21 1975-05-13 Ionics Method of fabricating embossed membranes
DE4402596A1 (de) * 1994-01-28 1995-08-10 Atotech Deutschland Gmbh Elektrolytisches Verfahren in horizontalen Durchlaufanlagen und Vorrichtung zur Durchführung desselben
EP1029954A1 (fr) * 1998-09-08 2000-08-23 Ebara Corporation Dispositif de plaquage de substrats
JP2000144467A (ja) * 1998-11-11 2000-05-26 Asahi Chem Ind Co Ltd 電解槽
WO2000034995A1 (fr) * 1998-12-07 2000-06-15 Japan Science And Technology Corporation Procede d'usinage/nettoyage avec des ions hydroxyde dans de l'eau ultrapure
EP1139400A1 (fr) * 1998-12-07 2001-10-04 Japan Science and Technology Corporation Procede d'usinage/nettoyage avec des ions hydroxyde dans de l'eau ultrapure
EP1079003A2 (fr) * 1999-08-27 2001-02-28 Yuzo Mori Méthode et appareil pour usinage électrolytique
EP1179617A1 (fr) * 1999-12-24 2002-02-13 Ebara Corporation Appareil et procede de placage de substrat, et appareil et procede de traitement electrolytique
EP1170083A2 (fr) * 2000-07-05 2002-01-09 Ebara Corporation Procédé et appareil d'usinage électrochimique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02103771A1 *

Also Published As

Publication number Publication date
TW592858B (en) 2004-06-21
JP4043234B2 (ja) 2008-02-06
KR20030031908A (ko) 2003-04-23
US20030132103A1 (en) 2003-07-17
CN1463467A (zh) 2003-12-24
EP1777736A1 (fr) 2007-04-25
WO2002103771A1 (fr) 2002-12-27
CN100449705C (zh) 2009-01-07
JP2003145354A (ja) 2003-05-20
KR100849202B1 (ko) 2008-07-31
EP1397828A1 (fr) 2004-03-17

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