EP1453093A4 - Halbleiterbauelement mit einem niederdielektrischen materialfilm und verfahren zu seiner herstellung - Google Patents

Halbleiterbauelement mit einem niederdielektrischen materialfilm und verfahren zu seiner herstellung

Info

Publication number
EP1453093A4
EP1453093A4 EP02778050A EP02778050A EP1453093A4 EP 1453093 A4 EP1453093 A4 EP 1453093A4 EP 02778050 A EP02778050 A EP 02778050A EP 02778050 A EP02778050 A EP 02778050A EP 1453093 A4 EP1453093 A4 EP 1453093A4
Authority
EP
European Patent Office
Prior art keywords
base
semiconductor device
dielectric constant
low dielectric
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02778050A
Other languages
English (en)
French (fr)
Other versions
EP1453093A1 (de
Inventor
Mitsumasa Koyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZyCube Co Ltd
Original Assignee
ZyCube Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZyCube Co Ltd filed Critical ZyCube Co Ltd
Publication of EP1453093A1 publication Critical patent/EP1453093A1/de
Publication of EP1453093A4 publication Critical patent/EP1453093A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/481—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes on the rear surfaces of the wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
EP02778050A 2001-11-05 2002-11-05 Halbleiterbauelement mit einem niederdielektrischen materialfilm und verfahren zu seiner herstellung Withdrawn EP1453093A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001340076 2001-11-05
JP2001340076 2001-11-05
PCT/JP2002/011494 WO2003041167A1 (en) 2001-11-05 2002-11-05 Semiconductor device comprising low dielectric material film and its production method

Publications (2)

Publication Number Publication Date
EP1453093A1 EP1453093A1 (de) 2004-09-01
EP1453093A4 true EP1453093A4 (de) 2007-10-10

Family

ID=19154331

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02778050A Withdrawn EP1453093A4 (de) 2001-11-05 2002-11-05 Halbleiterbauelement mit einem niederdielektrischen materialfilm und verfahren zu seiner herstellung

Country Status (7)

Country Link
US (2) US7091534B2 (de)
EP (1) EP1453093A4 (de)
JP (1) JP4472340B2 (de)
KR (1) KR20050043730A (de)
CN (1) CN1309077C (de)
TW (1) TWI261892B (de)
WO (1) WO2003041167A1 (de)

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US20070194450A1 (en) 2006-02-21 2007-08-23 Tyberg Christy S BEOL compatible FET structure
US7777268B2 (en) * 2006-10-10 2010-08-17 Schiltron Corp. Dual-gate device
US7666723B2 (en) * 2007-02-22 2010-02-23 International Business Machines Corporation Methods of forming wiring to transistor and related transistor
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CN104752421B (zh) * 2013-12-27 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
JP5856227B2 (ja) * 2014-05-26 2016-02-09 ルネサスエレクトロニクス株式会社 半導体装置
EP3155666B1 (de) * 2014-06-16 2021-05-12 Intel IP Corporation Metall auf beiden seiten mit taktgesteuerter energie und signalweglenkung darunter
US10367070B2 (en) 2015-09-24 2019-07-30 Intel Corporation Methods of forming backside self-aligned vias and structures formed thereby
DE112015006973T5 (de) 2015-09-25 2018-07-12 Intel Corporation Rückseiten-kontaktstrukturen und herstellung für metall auf beiden seiten von vorrichtungen
WO2017171842A1 (en) 2016-04-01 2017-10-05 Intel Corporation Transistor cells including a deep via lined with a dielectric material
US10872820B2 (en) 2016-08-26 2020-12-22 Intel Corporation Integrated circuit structures
US9837302B1 (en) * 2016-08-26 2017-12-05 Qualcomm Incorporated Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer
DE112016007504T5 (de) 2016-12-07 2019-09-26 Intel Corporation Integriertes Schaltungs-Bauelement mit zinnenartigem Metall-Leiterbahn-Layout
US10559594B2 (en) * 2017-04-11 2020-02-11 Ahmad Tarakji Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors
DE112017008080B4 (de) 2017-12-26 2025-12-31 Intel Corporation Gestapelte Transistoren mit zuletzt ausgebildetem Kontakt
KR102601827B1 (ko) * 2017-12-29 2023-11-14 엘지디스플레이 주식회사 유기발광표시 장치
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US10580903B2 (en) 2018-03-13 2020-03-03 Psemi Corporation Semiconductor-on-insulator transistor with improved breakdown characteristics
US20190288006A1 (en) * 2018-03-13 2019-09-19 Psemi Corporation Backside Charge Control for FET Integrated Circuits
US10672806B2 (en) 2018-07-19 2020-06-02 Psemi Corporation High-Q integrated circuit inductor structure and methods
US10573674B2 (en) 2018-07-19 2020-02-25 Psemi Corporation SLT integrated circuit capacitor structure and methods
US10658386B2 (en) 2018-07-19 2020-05-19 Psemi Corporation Thermal extraction of single layer transfer integrated circuits
US20200043946A1 (en) 2018-07-31 2020-02-06 Psemi Corporation Low Parasitic Capacitance RF Transistors
US11688780B2 (en) 2019-03-22 2023-06-27 Intel Corporation Deep source and drain for transistor structures with back-side contact metallization
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US11239325B2 (en) * 2020-04-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside via and method of fabricating thereof
US12219778B2 (en) 2020-06-29 2025-02-04 Taiwan Semiconductor Manufacturing Company Limited Multi-gate selector switches for memory cells and methods of forming the same
US11411100B2 (en) * 2020-09-29 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming backside power rails
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See also references of WO03041167A1 *

Also Published As

Publication number Publication date
US20040266168A1 (en) 2004-12-30
WO2003041167A1 (en) 2003-05-15
HK1074531A1 (en) 2005-11-11
US7326642B2 (en) 2008-02-05
JP4472340B2 (ja) 2010-06-02
CN1625808A (zh) 2005-06-08
US7091534B2 (en) 2006-08-15
TW200300279A (en) 2003-05-16
EP1453093A1 (de) 2004-09-01
JPWO2003041167A1 (ja) 2005-03-03
US20060115943A1 (en) 2006-06-01
KR20050043730A (ko) 2005-05-11
TWI261892B (en) 2006-09-11
CN1309077C (zh) 2007-04-04

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