EP1489193B1 - Alliage d'agent et son utilisation. - Google Patents

Alliage d'agent et son utilisation. Download PDF

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Publication number
EP1489193B1
EP1489193B1 EP20040011328 EP04011328A EP1489193B1 EP 1489193 B1 EP1489193 B1 EP 1489193B1 EP 20040011328 EP20040011328 EP 20040011328 EP 04011328 A EP04011328 A EP 04011328A EP 1489193 B1 EP1489193 B1 EP 1489193B1
Authority
EP
European Patent Office
Prior art keywords
silver
alloy
weight
indium
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP20040011328
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German (de)
English (en)
Other versions
EP1489193A1 (fr
Inventor
Bernd Gehlert
Heiko Specht
Oliver Dr. Warkentin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of EP1489193A1 publication Critical patent/EP1489193A1/fr
Application granted granted Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Definitions

  • the invention relates to a silver-based alloy and its use.
  • the EP 1 028 421 A2 discloses a multilayer optical disk having at least two data recording layers covered with a transparent layer and a light-transmissive protective layer. At least one of the two layers for data recording contains at least one element of a group which, among many others, also names the elements silver, gold, tin, aluminum, copper, ruthenium, rhodium and indium.
  • the WO 99/67084 discloses metal alloys for reflective or semi-reflective layers of an optical storage medium.
  • silver-palladium-copper and silver-palladium-rhodium alloys are mentioned as metal alloys.
  • the EP 1 103 758 A2 discloses a reflector layer of a silver-palladium-copper alloy for a lamp, wherein the palladium content is in the range of 0.5 to 3 wt .-% and the copper content in the range of 0.1 to 3 wt .-%. It is further disclosed to provide a sputtering target or evaporable silver-palladium-copper alloy material.
  • the EP 1 069 194 A1 discloses a metal alloy for electronic parts with 0.1 to 3.0 wt .-% palladium, 0.1 to 3.0 wt .-% copper and the rest silver. Furthermore, it is disclosed to use the metal alloy for a sputtering target.
  • the DE 41 35 801 C2 discloses a reflective layer of silver on a glass substrate, which on the side facing away from the glass substrate for corrosion protection with an aqueous solution of a chloride, bromide, iodide, sulfate or acetate of at least Al 3+ , Ti 3+ , V 2+ , V 3+ , Cr 2+ , Fe 2+ , In 2+ and Cu 2+ is treated.
  • aqueous solution can continue Sn (II) ions be included.
  • the use of such a coated glass substrate takes place, inter alia, as a mirror.
  • the DE 41 35 800 C2 discloses a reflection layer of silver on a glass substrate, which on the side facing away from the glass substrate for corrosion protection with a freshly prepared, acidified aqueous solution of a stannous chloride, stannous bromide, stannous iodide, stannous (II) sulfate or tin (II) acetate is treated.
  • the silver reflective layer after this treatment has, on its side facing away from the glass substrate, a surface layer with a thickness in the range of 2 to 3 nm, which has at least an increased number of tin atoms in the range of 5 to 35 atoms of Sn per 100 atoms of metal, which is one part of greater than 5.5 wt .-% Sn corresponds.
  • the use of such a coated glass substrate takes place, inter alia, as a mirror.
  • the WO 00/69975 discloses a method of making metal flakes with a dielectric coating.
  • the material for the metal flake or a reflective metal layer from the group Al, Cu, Ag, Au, Pt, Pd, Ni, Co, Sn, Rh, Nb, Cr, their combinations or their alloys is selected.
  • the reflective metal layer is covered on both sides with a dielectric layer and finally comminuted into flake particles.
  • US 6,139,652 discloses an alloy of 99.5 wt.% Ag and 0.5 wt.% Sn and an alloy of 99.570 wt.% Ag and 0.430 wt.% In.
  • An essential aspect of this document is the hardenability of silver alloys containing at least 99.5% by weight of silver.
  • Decisive for a sputtering target according to the invention or a reflector layer according to the invention is that the alloy consists of 0.01 to 5.0% by weight of indium and / or tin and / or antimony and / or bismuth and the remainder silver.
  • an alloy is preferred for these applications 0.5 to 3.0 wt .-% indium and / or tin and / or antimony and / or bismuth and the rest silver.
  • the reflection of the layers at 560 nm before the noxious gas test and after a noxious test duration of 3 h and 6 h was measured (see FIG. 1).
  • the measurement results of each layer were normalized to the value of their reflection before the climatic test. All layers show a decrease in reflectivity as a function of the duration of the noxious gas test. It can be seen that the reflector layers of the alloys according to the invention are clearly superior in weathering resistance to the known layers of Ag or AgPd1 Cu1.
  • the layers of AgSn1 and AgSn0.5In0.5 proved to be particularly weather-resistant.
  • the use of the alloys according to the invention for the formation of reflector layers is ideal.
  • the alloys AgIn0.5 and AgSn0.5 have as reflector layers over known materials for reflector layers such as AgPd1Cu1 the advantage a higher reflectivity.
  • the reflection (in%) of the comparative layers of Ag (curve A) and AgPd1Cu1 (curve D) is the layers of the alloys according to the invention AgIn0.5 (curve B) and AgSn0.5 (curve C) at wavelengths in the range of Visible spectrum contrasted.
  • the improved reflection of the layers of the alloys according to the invention over the comparison layer of AgPd1Cu1 (curve D) can be seen.
  • a reflector layer of such an alloy represents an excellent and, with regard to the reflectivity, preferable alternative to known reflector layers.
  • the use as a reflector layer for reflection of visible daylight is preferred.
  • the reflector layer is particularly suitable for reflecting visible daylight in reflective or transflective displays. Since no additional electrical backlight is provided in reflective displays, a particularly high reflectivity of the reflector layer is required, which has a layer of the alloy according to the invention to a high degree.
  • after-treatment of the reflector layer by, for example, chemical, mechanical or coating processes can be dispensed with.
  • alloys according to the invention for the formation of a sputtering material for cathode sputtering systems has also proven to be useful. Since reflector layers for optical storage media and in reflective displays are usually formed by PVD (physical vapor deposition), it is helpful to provide the alloy as a sputtering material or as a sputtering target or as an evaporation material.
  • PVD physical vapor deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Powder Metallurgy (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Claims (12)

  1. Cible de pulvérisation composée d'un alliage à base d'argent, caractérisée en ce que l'alliage se compose de 0,01 à 5,0 % en poids d'indium et/ou d'étain et/ou d'antimoine et/ou de bismuth et d'argent pour le reste.
  2. Cible de pulvérisation composée d'un alliage selon la revendication 1, caractérisée en ce que l'alliage se compose de 0,5 à 3,0 % en poids d'indium et/ou d'étain et/ou d'antimoine et/ou de bismuth, et d'argent pour le reste.
  3. Couche réflectrice composée d'un alliage à base d'argent, caractérisée en ce que l'alliage se compose de 0,01 à 5,0 % en poids d'indium et/ou d'étain et/ou d'antimoine et/ou de bismuth, et d'argent pour le reste.
  4. Couche réflectrice selon la revendication 3, caractérisée en ce que l'alliage se compose de 0,5 à 3,0 % en poids d'indium et/ou d'étain et/ou d'antimoine et/ou de bismuth, et d'argent pour le reste.
  5. Alliage à base d'argent, caractérisé en ce que l'alliage se compose
    de 0,5 à 1,0 % en poids d'indium
    et
    d'étain et/ou d'antimoine et/ou de bismuth,
    et
    d'argent pour le reste.
  6. Alliage selon la revendication 5, caractérisé en ce que l'alliage se compose de 0,5 % en poids d'étain, de 0,5 % en poids d'indium, et d'argent pour le reste.
  7. Utilisation d'un alliage selon la revendication 5 ou 6 pour constituer une couche réflectrice.
  8. Utilisation selon la revendication 7, caractérisée en ce que la couche réflectrice est utilisée pour la réflexion de lumière du jour visible.
  9. Utilisation selon la revendication 8, caractérisée en ce que la couche réflectrice est utilisée pour la réflexion de lumière du jour visible dans des écrans réflectifs ou transflectifs.
  10. Utilisation selon la revendication 7, caractérisée en ce que la couche réflectrice est utilisée pour des supports de mémoire optiques.
  11. Utilisation d'un alliage selon l'une des revendications 5 ou 6 pour constituer un matériau de pulvérisation pour des installations de pulvérisation cathodique.
  12. Utilisation d'un alliage selon l'une des revendications 5 ou 6 pour constituer un matériau de vaporisation pour des installations de vaporisation.
EP20040011328 2003-06-16 2004-05-13 Alliage d'agent et son utilisation. Expired - Lifetime EP1489193B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10327336 2003-06-16
DE2003127336 DE10327336A1 (de) 2003-06-16 2003-06-16 Legierung und deren Verwendung

Publications (2)

Publication Number Publication Date
EP1489193A1 EP1489193A1 (fr) 2004-12-22
EP1489193B1 true EP1489193B1 (fr) 2007-06-27

Family

ID=33394849

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20040011328 Expired - Lifetime EP1489193B1 (fr) 2003-06-16 2004-05-13 Alliage d'agent et son utilisation.

Country Status (6)

Country Link
US (2) US20040253137A1 (fr)
EP (1) EP1489193B1 (fr)
JP (1) JP2005008983A (fr)
KR (1) KR20040108585A (fr)
DE (2) DE10327336A1 (fr)
TW (1) TWI316092B (fr)

Families Citing this family (30)

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US7384677B2 (en) * 1998-06-22 2008-06-10 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US6852384B2 (en) * 1998-06-22 2005-02-08 Han H. Nee Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7045187B2 (en) * 1998-06-22 2006-05-16 Nee Han H Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314657B2 (en) * 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7374805B2 (en) * 2000-07-21 2008-05-20 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314659B2 (en) * 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7316837B2 (en) * 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
WO2004094135A1 (fr) * 2003-04-18 2004-11-04 Target Technology Company, Llc Alliages metalliques pour la couche reflechissante ou semi-reflechissante d'un support de memorisation optique
TW200514070A (en) * 2003-09-03 2005-04-16 Williams Advanced Materials Inc Silver alloys for optical data storage and optical media containing same
TWI325134B (en) * 2004-04-21 2010-05-21 Kobe Steel Ltd Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target
JP2006294195A (ja) * 2005-04-14 2006-10-26 Kobe Steel Ltd 光情報記録用Ag合金反射膜、光情報記録媒体および光情報記録用Ag合金反射膜の形成用のAg合金スパッタリングターゲット
US20070014963A1 (en) * 2005-07-12 2007-01-18 Nee Han H Metal alloys for the reflective layer of an optical storage medium
SE536911C2 (sv) 2011-02-09 2014-10-28 Impact Coatings Ab Material för att åstadkomma ett elektriskt ledande kontaktskikt, ett kontaktelement med sådant skikt, metod för att åstadkomma kontaktelementet, samt användning av materialet
JP5830907B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5830908B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
WO2012137461A1 (fr) * 2011-04-06 2012-10-11 三菱マテリアル株式会社 Cible de pulvérisation en alliage d'argent pour former un film électroconducteur, et son procédé de fabrication
JP5488849B2 (ja) * 2011-06-24 2014-05-14 三菱マテリアル株式会社 導電性膜およびその製造方法並びにこれに用いるスパッタリングターゲット
JP2013077547A (ja) * 2011-09-15 2013-04-25 Mitsubishi Materials Corp 導電性膜及びその製造方法並びに導電性膜形成用銀合金スパッタリングターゲット及びその製造方法
JP5159962B1 (ja) 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5159963B1 (ja) * 2012-01-13 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP2014047400A (ja) * 2012-08-31 2014-03-17 Kobe Steel Ltd フラットパネルディスプレイの半透過電極用Ag合金膜、およびフラットパネルディスプレイ用半透過電極
JP5522599B1 (ja) 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ag合金スパッタリングターゲット
JP5590258B2 (ja) * 2013-01-23 2014-09-17 三菱マテリアル株式会社 Ag合金膜形成用スパッタリングターゲットおよびAg合金膜、Ag合金反射膜、Ag合金導電膜、Ag合金半透過膜
KR101764053B1 (ko) * 2013-06-26 2017-08-01 가부시키가이샤 고베 세이코쇼 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟
JP5975186B1 (ja) * 2015-02-27 2016-08-23 三菱マテリアル株式会社 Ag合金スパッタリングターゲット及びAg合金膜の製造方法
TWI535865B (zh) 2015-06-25 2016-06-01 王仁宏 一種銀合金材料及其製作方法
EP3168325B1 (fr) 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Cible de pulverisation a base d'un alliage d'argent
JP2019035100A (ja) * 2016-01-06 2019-03-07 コニカミノルタ株式会社 反射膜の製造方法
JP2018176493A (ja) * 2017-04-07 2018-11-15 三菱マテリアル株式会社 積層膜、及び、Ag合金スパッタリングターゲット

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Also Published As

Publication number Publication date
TWI316092B (en) 2009-10-21
DE10327336A1 (de) 2005-01-27
EP1489193A1 (fr) 2004-12-22
US20070062810A1 (en) 2007-03-22
KR20040108585A (ko) 2004-12-24
JP2005008983A (ja) 2005-01-13
DE502004004173D1 (de) 2007-08-09
TW200508403A (en) 2005-03-01
US20040253137A1 (en) 2004-12-16

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