Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/80—Cleaning only by supercritical fluids
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
  • B08B3/04—Cleaning involving contact with liquid
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
  • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
  • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
  • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
  • B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
  • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
  • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
  • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

• the International Technology Roadmap for Semiconductors indicates that the critical particle size is half of a DRAM 1/2 pitch [1].
• the critical particle size is 65 nm. Therefore, particles larger than 65 nm size must be removed to ensure a defect-free device.
• C c is the Cunningham slip correction factor given as in equation (2)
• Cc 1 + 1.246( ⁇ /a) + 0.42( ⁇ /a)exp[-0.87(a/ ⁇ )] (2)
• Equation 1 shows that the relaxation time decreases with particle size. Therefore, the smaller-sized particles will not be able to arrive at the wafer surface with sufficient velocity to effectively clean the inside walls of the submicron vias and trenches.
• a reactive gas or reactive vapor of a liquid may be used to aid in the removal of contaminants.
• the reactive gas or vapor is selected according to its reactivity with the contaminants on the substrate surface.
• Reactive gases or vapors are generally used to remove organic photoresist and fluoropolymer etch residue inside features on the substrate surface.
• the gas/vapor After reacting with the contaminants, the gas/vapor preferably produces byproducts in a gaseous form.
• references to reactive gas may include reactive vapors of a liquid and references to reactive vapors may include reactive gases.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• Cleaning By Liquid Or Steam (AREA)
• Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Applications Claiming Priority (9)

Publications (2)

Family

ID=29255566

Family Applications (1)

Country Status (6)

Families Citing this family (12)

Family Cites Families (11)

• 2003
  • 2003-04-03 WO PCT/US2003/010354 patent/WO2003086668A1/en not_active Ceased
  • 2003-04-03 JP JP2003583667A patent/JP2005522056A/ja active Pending
  • 2003-04-03 KR KR10-2004-7015867A patent/KR20040098054A/ko not_active Ceased
  • 2003-04-03 AU AU2003233485A patent/AU2003233485A1/en not_active Abandoned
  • 2003-04-03 CN CN038103621A patent/CN1665609A/zh active Pending
  • 2003-04-03 EP EP03728337A patent/EP1494821A4/de not_active Withdrawn

Also Published As

Similar Documents

Legal Events