Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/225—Oblique incidence of vaporised material on substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/04—Coating on selected surface areas, e.g. using masks
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/04—Coating on selected surface areas, e.g. using masks
  • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
  • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C14/568—Transferring the substrates through a series of coating stations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3447—Collimators, shutters, apertures

Definitions

• the invention relates to a device for the directed application of deposition material to a substrate, in particular for focusing the sputter flow in a PVD system over a narrow angular range.
• PVD systems Physical Vapor De- position
• Sputtering systems designed so that a maximum amount of sputtering material can be separated in the shortest possible time.
• the distribution of the sputtering material on the substrate should be as homogeneous as possible.
• orifices are used that geometrically limit the sputter flow. Such orifices limit the sputtering flow only in the outer areas, while the sputtering rays are still strongly scattered.
• a sputtering cathode based on the magnetron principle in which a magnetic field is applied transversely to the direction of movement of the charge carriers in order to increase the sputter rate.
• a sputtering device for producing thin layers in which a control electrode device with a sufficiently large geometrical permeability is introduced into the space between plasma and substrate to control the sputtering particles. The movement of the sputtered and positively charged target particles can be influenced by this control electrode device.
• European patent application EP 0 509 305 describes a method for the deposition of conductor tracks in depressions with a large aspect ratio.
• the aspect ratio is given by the ratio of the depth to the width of the depression.
• a method of reactive sputtering by a collimator is used for the deposition, the collimator having an aspect ratio similar to that of the depression on the bottom of which the conductor track is to be applied.
• US Pat. No. 4,776,868 discloses a method for producing convex elevations on a substrate, the elevations being processed into lenses.
• the increases are applied in that, in a vacuum, a vapor • "of a substance is deposited from a source and passed through a mask having openings prior to the vapor impinges on the substrate.
• the thickness of the mask is chosen such that a vapor cone converging in an opening enters and diverges again and hits the substrate.
• US Pat. No. 3,627,569 discloses a method and a device for vapor deposition of thin films, in which the thickness profile and the surface area to be coated are strongly controlled by a directing device. be trolled.
• the directing device consists of several elongated channels to channel the steam between the source and a substrate. This causes an even distribution and an orientation of the steam flow.
• US Pat. No. 5,415,753 describes a pinhole that is located between a sputtering target and a substrate to be coated with the target material.
• the pinhole is essentially designed so that it does not have a directing effect due to a low aspect ratio.
• the apertures of the pinhole trap a certain percentage of the sputter particles, while other sputter particles are let through for deposition on the substrate.
• the device causes the rate of separation of the pinhole to be lower than the rate of deposition of the sputtering process.
• US Pat. No. 6,168,832 discloses a method for vacuum evaporation of one or more layers on a substrate, the thickness distribution of the layers being controlled by a three-dimensional mask which is positioned between the substrate and a steam source.
• both the substrate and the mask rotate, the mask being circular and having opening slots arranged in a fan shape.
• US 6,210,540 describes a mask positioned over the center of a deposition source to limit the flow angle from the source.
• a device rotates in front of the mask, on the circumference of which a substrate to be coated is applied.
• the mask is used to shielded rich of the device, which should not be exposed to the deposition.
• the rotation of the device causes the side surfaces of the substrate to be coated at changing angles.
• a device for sputtering a material onto a substrate is known from European patent application EP 0 717 432, in which a tube is attached between the sputtering target and the substrate to be coated.
• the tube has the effect that selected areas of the target material flow do not reach the substrate.
• Japanese patent application JP 07 113 172 describes a collimator which is located in a device for applying a thin film, the collimator having a multiplicity of uniformly arranged slots. The film forming material passes through the slits.
• Japanese patent application JP 10 121 234 also describes a sputtering device with a collimator, which is intended to eliminate or reduce the asymmetry of the film formation.
• a collimator with a plurality of openings is known from Japanese patent application JP 1 260 139, which is positioned between a sputtering target and a wafer.
• the inner surfaces of the openings are sawtooth-shaped with tapered sections (ring-shaped grooves).
• the object of the invention is to design a generic device in such a way that it enables deposition material to be applied to a substrate in a narrow and narrow manner and in a directed manner.
• this object is achieved in that a generic device is equipped with a filter which focuses the deposition material to be applied onto a narrow angular range.
• the object is achieved in that a sputtering device is equipped with a filter which is introduced between the sputtering target and the substrate in such a way that the sputtering particle flow is guided through it and focused.
• the filter according to the invention consists of several channel-shaped individual structures.
• the focus of the sputter particle flow is based on the geometrical dimensions of the individual filter structures, the design of the filter being based on geometrical beam considerations.
• a sputter trench is formed on the target in the form of an oval-shaped depression, from which the target particles are sputtered out. If a sputter particle flow from a point source of such a sputter trench, which is scattered in many directions, now enters a single structure of the filter according to the invention, only the sputter particles that have entered within a certain angular range D are let through.
• the filter consists of several individual structures, which are preferably arranged next to each other so that the Hauptan- the sputter flux, originating from the sputter of the target can be passed through the filter structures and focused in part '.
• the individual structures of the filter can be shaped differently.
• Are the filter invention may further assessment procedures not only for sputtering, 'but also for other coatings used in which Deposititionsmate- rial is to be directed and focused on a narrow range of angles.
• the pictures show:
• Figure 1 shows the known prior art of panels in PVD systems.
• Fig. 2 shows the influence of a single structure
• Fig. 3 shows the effect of a multiple structure
• Fig. 13 shows an embodiment with a rotary cathode.
• FIG. 1 represents in a simplified manner the state of the art in cathode sputtering systems (PVD systems).
• the system 10 comprises a cathode 20, an anode 21 and a plasma which was ignited between the two electrons.
• a voltage drop forms in front of the cathode, which accelerates the positively charged particles of the plasma, so that they hit a sputtering target 22 which is located in front of the cathode.
• There the particles of the plasma knock out individual atoms or molecules, which then go after all
• Scattered directions hit the substrate 30 and form a layer there, the composition of which corresponds to the target composition.
• a sputter trench or so-called “racetrack” is formed on the target 22 in the form of an indentation with an oval shape, since the
• Particles are not sputtered from the entire target area, but only in the area of this oval structure.
• two point sources 40 of such a sputtering tergrabens shown on the target, from which particles are sputtered in all directions.
• Sputter cathodes and systems of this type are preferably designed such that a maximum amount of sputter material is deposited in the shortest possible time.
• the sputter flow is conducted, for example, through the opening of an aperture 50 onto the substrate 30.
• a focused and directed sputter flow is not possible by means of an orifice, since the sputter flow is still heavily scattered and only the scattering into the outer regions is prevented.
• the invention therefore provides for a device for applying deposition material to be equipped with a filter which focuses the deposition material over a narrow angular range.
• the devices can be any systems in which deposition material in the form of particles is applied to a substrate.
• it can be PVD, spray and / or CVD systems.
• the invention therefore provides to equip a cathode sputtering or sputtering system with a filter which limits the sputtering flow to a narrow angular range.
• the filter is introduced between at least one sputtering cathode with a sputtering target and the substrate to be coated, so that the flow of the sputtered particles is guided through the filter structure.
• the design of the filter structure is based on geometrical beam considerations, the geometrical dimensions being chosen such that outside a certain angular range scattered sputtering directions are eliminated and the sputtering beam is limited to the corresponding angular range.
• the drawing in FIG. 2 shows the effect of an individual structure of such a filter on a point source. If the individual structure 60 is introduced into the sputtering rays that originate from a point source 40 of a target, it filters out the outwardly scattering rays, so that the sputtering rays that emerge from the filter structure are limited to a certain angular range ⁇ . Sputter rays outside this angular range are deposited on the inner walls of the structure and thus eliminated.
• FIG. 3 shows the effect of a multiple structure of a filter according to the invention on the sputter flow directions of a target 22.
• the filter of several juxtaposed individual structures is formed, and this' multiple structure 90 of such a filter is located in the sputter several point sources 40 of a target 22.
• point sources are point sources in the sputter of the target 22.
• the Multiple structure of the filter 90 filters out the undesirable sputtering directions and thus limits the angular range of the total sputtered particle beams that pass through the multiple structure.
• a directed sputter flow is created behind the filter, which makes it possible to apply the deposition material to a substrate at an angle.
• the drawing in FIG. 4 shows the geometric relationships of the individual structures of a filter. These are preferably channel-shaped structures.
• the maximum opening angle of the filtered sputter flow is dependent on the geometry of the individual structure, a channel structure with a rectangular cross section being selected in the exemplary embodiment shown.
• the opening angle D is typically on the order of 10 to 120 degrees.
• the length L is given by the length of the channel of the structure, while the width B is given by the widest cross section of the structure.
• the shape of the structures can be chosen according to the purpose and is therefore not limited to a rectangular cross section, as shown in FIG. 8. 5, 6 and 7 show exemplary embodiments of filter structures with different cross sections. For example, these can be structures with a square, honeycomb or round cross section. If it is considered appropriate, different cross sections can also be realized within a multiple structure.
• the diameter B of the channel is expediently to be taken as the width B. If a honeycomb-shaped cross-section is selected, the broadest cross-section of the structure must be taken as width B.
• the number of individual structures within a filter depends on the application and the angular range to be achieved. Typical numbers for, for example, square channels within a structure are in the order of 1600 / m 2 to 250,000 / m 2 .
• a variety of materials are suitable for forming the filter structures, which meet the requirements placed on them. This includes stability, chemical and physical resistance and good cleaning options. Suitable materials are, for example, suitable plastics, aluminum alloys, iron or steel alloys, of which the filter consists of at least 80%.
• the thickness of the web material is preferably chosen so that the stability of the structure is guaranteed, but no excessive shading occurs. Typical web thicknesses are on the order of 0.05 mm to 2 mm.
• structures for the filter which enable easy cleaning.
• This is possible, for example, in the lamellar structures in FIG. 8, in which the rectangular cross section of the individual structures is very long and only a few cross members stiffen the structure.
• the inner walls of the structures can be easily cleaned by moving a cleaning device like a brush lengthways through the cross section. If the application only requires that the focusing of particle beams only takes place in the transverse direction to the individual structures, such structures with lamellar cross sections are sufficient and can be cleaned with little effort.
• the structures should preferably not have any areas that are difficult to clean. If mechanical cleaning, for example by brushing or sandblasting, is not possible, etching processes, for example, can be used as the cleaning process. Other cleaning methods are also possible.
• the type of cleaning suitably depends on the type of filter material, the shape the filter and the target material used. If the filter is not intended to be cleaned, it should expediently consist of a material that can be disposed of easily and inexpensively in connection with the separated sputtering material.
• a particularly preferred exemplary embodiment of the invention provides for the sputtering cathode with the sputtering target and the filter structure behind it in the sputtering direction to be attached at an angle to the substrate.
• FIG. 9 This is an inline process in which a substrate 30 is passed through at least two PVD systems 10 in succession.
• Both the cathodes 20 with the respective sputter targets 22 and the filter structures 90 are at an angle ⁇ to the surface of the substrate.
• the filters focus the sputter flow of the cathode on a certain narrow area, so that a directed sputter flow arises.
• the resulting directional deposition of sputter material on the substrate takes place at the set angle ⁇ , which is determined by the alignment of the cathode and filter structure. Changing the orientation also changes the application angle.
• the substrate is guided past the cathode with the filter at a certain distance at a speed of the order of 0.1 to 12 m / min, so that the substrate is coated with deposition material in accordance with the requirements.
• the deposition or sputtering rates achieved in this way depend heavily on the boundary conditions such as the sputtering performance, the sputtering pressure and the target material. It also has an impact on the sputter rate whether that Sputtering regime is reactive and the target is ceramic or metallic. Typical deposition rates in such a device are in the order of 0.1 nm / min to 1000 nm / min.
• the angles set in the PVD systems 10 differ, so that differently directed sputtering processes can take place in the respective stations.
• the substrate is coated at an angle ⁇ , while the deposition in the second station takes place at an angle ⁇ . This may be necessary, for example, in the production of self-adjusting series connections of thin layers, in which a substrate is exposed to material depositions layer by layer at different angles of incidence.
• FIG. 10 A further inline process is shown in FIG. 10, in which the individual cathodes 20 and sputtering targets 22 are attached at an angle ⁇ to the continuous substrate 30, while the filter structures 90 are introduced such that they preferably run parallel to the surface of the substrate.
• the filter can of course also be arranged at any angle to the substrate surface.
• the individual structures 60 of the filter are designed such that the channels are again at an angle ⁇ to the substrate 30. In this way, a directed application of sputtering material is also realized at a certain angle.
• the respective angle can be changed by aligning the cathode 20 and changing the individual structures 60 of the filter 90.
• the cathodes are at any angle stand to the substrate and the sputtering plasma with the sputtering rays are at an angle to the cathode.
• the cathode 20 is, for example, parallel to the surface of the substrate 30, while the sputter beams are deflected in such a way that they form a field that is inclined at the angle ⁇ . This inclined field is passed through the filter 90 and its sputtering rays are also directed onto the substrate at an angle ⁇ .
• FIG. 13 shows a further exemplary embodiment in which rotary cathodes with tubular target material 110 are used. Magnets 120 and water cooling are located within this target tube. The target material is evenly removed by rotating the target. If the magnets are now rotated, as shown in the drawing, the plasma also rotates and the sputter particles are deposited at an angle ⁇ to the substrate 30. The position of the filter 90 with the individual filter structures 60 can again be selected as desired.
• the deflection of the sputtered particles by collisions depends on the free path length of the sputter particles and thus on the sputter pressure in the chamber 100.
• the sputter pressure also has an influence on the sputter rate, so that an optimum must be found for the respective application.
• a filter structure according to the invention is not limited to the sputtering method in a PVD system, but rather can also be used for other methods in which a directed deposition material is to be applied to a substrate. Further possible application forms are, for example, closed space sublimation, thermal evaporation and spraying. Reference symbol list:

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• Chemical & Material Sciences (AREA)
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• Organic Chemistry (AREA)
• Materials Engineering (AREA)
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• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Electrodes Of Semiconductors (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
• Optical Integrated Circuits (AREA)

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• 2002
  • 2002-03-19 PT PT02006164T patent/PT1350863E/pt unknown
  • 2002-03-19 DE DE50207784T patent/DE50207784D1/de not_active Expired - Fee Related
  • 2002-03-19 AT AT02006164T patent/ATE335868T1/de not_active IP Right Cessation
  • 2002-03-19 EP EP02006164A patent/EP1350863B1/fr not_active Expired - Lifetime
  • 2002-03-19 DK DK02006164T patent/DK1350863T3/da active
  • 2002-03-19 ES ES02006164T patent/ES2269541T3/es not_active Expired - Lifetime
• 2003
  • 2003-03-18 US US10/508,196 patent/US7300557B2/en not_active Expired - Fee Related
  • 2003-03-18 JP JP2003576667A patent/JP2005530919A/ja active Pending
  • 2003-03-18 KR KR10-2004-7014713A patent/KR20050000372A/ko not_active Withdrawn
  • 2003-03-18 WO PCT/EP2003/002863 patent/WO2003078677A2/fr not_active Ceased
  • 2003-03-18 AU AU2003218793A patent/AU2003218793A1/en not_active Abandoned
  • 2003-03-18 EP EP03712055A patent/EP1497478A2/fr not_active Withdrawn

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