EP1497703B1 - Ensemble de circuits pour la regulation de tension comprenant un diviseur de tension - Google Patents

Ensemble de circuits pour la regulation de tension comprenant un diviseur de tension Download PDF

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Publication number
EP1497703B1
EP1497703B1 EP03722263A EP03722263A EP1497703B1 EP 1497703 B1 EP1497703 B1 EP 1497703B1 EP 03722263 A EP03722263 A EP 03722263A EP 03722263 A EP03722263 A EP 03722263A EP 1497703 B1 EP1497703 B1 EP 1497703B1
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EP
European Patent Office
Prior art keywords
voltage
diode
diodes
circuit arrangement
divider
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03722263A
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German (de)
English (en)
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EP1497703A1 (fr
Inventor
Andreas Schlaffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
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Infineon Technologies AG
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Publication date
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Publication of EP1497703A1 publication Critical patent/EP1497703A1/fr
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Definitions

  • the invention relates to a circuit arrangement for voltage regulation with a voltage divider which is arranged between a first potential and a reference potential and having a plurality of diodes connected in series, wherein at one terminal of a diode, an output voltage can be tapped, a control circuit to which the output voltage and a reference voltage is applied to control the first potential due to a comparison of the output voltage with the reference voltage, wherein the divider ratio by the activation or deactivation of one or more diodes is variable.
  • Such a circuit for voltage regulation with a voltage divider constructed of resistors may e.g. are taken from the document DE 19947115 A1.
  • Such circuit arrangements for voltage regulation are used for example in integrated circuit arrangements in which a voltage is generated which is greater than the supply voltage of the integrated circuit. Such voltages are needed, for example, to erase memory cells of a non-volatile memory, in particular EEPROM memory.
  • the problem that arises is to regulate the potential difference between the first potential and the reference potential, which is referred to below as high voltage. Since the high voltage is above the supply voltage, it is not possible to directly measure and regulate this high voltage. For this reason, voltage dividers are used, so that the measurement and control can be done at a lower voltage level, which is below the supply voltage.
  • dividers usually two different types are used. If an exact adjustment of the divider ratio is required, dividers will be made of resistor chains built up. Individual resistors can be bridged to set the divider ratio. The fineness of the adjustment results from the height of each bridged resistor in relation to the total resistance of the divider.
  • dividers have the disadvantage that the space requirement is relatively large and therefore this is an unfavorable from the cost point solution.
  • a solution which is more favorable with respect to the area required consists of constructing the voltage divider of diodes, in particular dividers of MOS transistors are known, which are each connected as a diode. In order to use such a divider, however, is a prerequisite that the minimum required Einstellgranulartician the divider is greater than the threshold voltage of the transistors. The adjustment of the voltage takes place in that individual diodes are activated or deactivated. If one assumes a realistic value of about 0.6 V for the threshold voltage of the transistors, the high voltage can only be set in steps of 0.6 V.
  • the nominal voltage drop must be reduced via a divider element, so that the total voltage can be changed by a voltage drop of, for example, 0.2 V by its activation or deactivation.
  • diodes or MOS transistors are no longer usable, since the threshold voltage is reached at 0.6 V and below a voltage divider constructed in this way is no longer functional.
  • the object of the invention is therefore to provide a circuit arrangement for voltage regulation, with an accurate adjustment of the voltage is possible and still has a small footprint.
  • the circuit arrangement according to the invention can be constructed completely from MOS transistors which have a very small area requirement in comparison to resistors.
  • the fineness of the setting of the divider ratio is achieved in that the coarse adjustment can be made as previously by the activation or deactivation of individual diodes and beyond the fine control is accomplished by the fact that the voltage drop across one or more of the diodes is adjustable separately. Whereas a voltage drop of typically 0.6 V occurs in the diodes without additional circuitry, this voltage drop can be set as desired between 0 V and 0.6 V as a result of the parallel-connected transistor provided according to a development of the invention.
  • a control circuit for driving a transistor connected in parallel to a diode is used, through which the transistor can be controlled such that one of the terminals of the diode assumes a predetermined voltage.
  • FIG. 1 how a circuit arrangement according to the prior art functions and in which the problems occurring there are justified.
  • a voltage divider is connected, which consists of the diodes D1 to D6.
  • the high voltage U HV is equally divided between the diodes D1 to D6, if they are the same diodes.
  • an output voltage U out is tapped and fed to a control circuit 2.
  • U out U HV / 3.
  • U REF U REF is determined such that it is one third of the desired high voltage.
  • the control circuit 2 then regulates the high voltage U HV until the measured voltage U out equals the reference voltage U REF .
  • Another setpoint for the high voltage U HV can be adjusted by changing the reference voltage value U REF .
  • the problem here is, however, that a change of U REF is multiplied by the reciprocal of the divider ratio, so in the present case, three times of the change of U REF affects the high voltage U HV .
  • this is not problematic since the divider ratio is 1: 3 and the voltage changes of U REF must be relatively large in order to achieve a certain change in U HV .
  • a concrete execution of such Circuit consists of a divider but much more diodes. With a desired high voltage of 16 V and a voltage drop of 0.6 V per diode, a divider with 26 diodes connected in series is to be provided. A change of U REF by 0.1 V thus results in a voltage change of 2.6 V at the high voltage U HF . It is obvious that an exact regulation of the high voltage U HV is difficult.
  • a second possibility for changing the high voltage U HV is to change the divider ratio of the voltage divider.
  • a suitable means for this is the bridging of individual diodes, whereby in each case the high voltage U HV is reduced by the amount of the voltage drop across a diode, that is to say in general 0.6 V.
  • a finer gradation than 0.6 V is not possible with such a circuit. Nevertheless, such circuits are used in practice.
  • a divider ratio control circuit 1 is provided to bridge one or more diodes D2 to D6 by a respective switch 3.
  • a finer gradation of adjustment is not possible with such, constructed with diodes circuit, since the threshold voltage of the diodes or transistors used is 0.6 V and can not be exceeded. While it is conceivable to use diodes with other semiconductor materials having a lower threshold than 0.6V, this is at an unjustifiable cost.
  • a voltage regulation circuit is shown in FIG. Again, a voltage divider is constructed by diodes, which in the embodiment shown are MOS transistors, which are each connected as a diode. In the following, these diode-connected transistors are referred to as diodes.
  • the uppermost diode is generally designated T n and the lying between T 3 and T n-1 diodes indicated by punk.
  • the output voltage U out is tapped above the lowermost diode T 1 .
  • a control circuit 2 controls the high voltage U HV such that the tapped voltage U out again corresponds to a reference voltage U REF . In the adjusted state, the voltage U T1 across the first diode T 1 is equal to the reference voltage U REF .
  • a current I T1 is established by the first diode T 1 . Since it is a series circuit and the input resistance of the control circuit 2 goes to infinity, the currents through all diodes are the same, which also, if one disregards an additional circuit of the diodes, same voltage drops.
  • the control circuit 2 has an operational amplifier OP2 and a charge pump circuit 4.
  • the non-inverting input of the operational amplifier OP2 is supplied with the output voltage U out of the voltage divider.
  • the reference voltage U REF is applied to the inverting input of the operational amplifier OP2. Since the high voltage U HV is above the supply voltage of the circuit arrangement, the operational amplifier OP2 can not directly provide the high voltage U HV . Instead, it cooperates with a charge pump circuit 4, at whose output the high voltage U HV is provided.
  • the control circuit 2 but other embodiments are conceivable, so that the arrangement shown here is to be understood only as an example.
  • the diode formed by T 2 is a transistor T R connected in parallel.
  • the transistor T R the voltage drop across the diode formed by T 2 is arbitrarily reduced. This has the consequence that the divider ratio is determined not only from the ratio of the number of diodes over which the output voltage U out is tapped to the total number of diodes, but as an additional analog setting variable the amount of voltage drop across the parallel circuit of T 2 and T R flows.
  • a great advantage of such an embodiment is that the sum of the currents through T 2 and T R again corresponds to the current I T1 so that the voltage drops across the other transistors connected as diodes do not change.
  • the transistor T R is driven by an operational amplifier OP1 whose non-inverting input is connected to the connection between the transistors T 2 and T 3 .
  • At the inverting input of the operational amplifier OP1 is applied to a control voltage U 2 .
  • the voltage U 2 is impressed at the junction between the transistors T 2 and T 3 , since the operational amplifier OP1 the current through the transistor T R changed so long until just at the junction between T 2 and T 3, the voltage U 2 occurs.
  • U2 is adjustable so that U REF does not fall below and 2 ⁇ U REF is not exceeded.
  • U H V U 2 + n - 2 ⁇ U REF ,
  • control bandwidth is therefore only between 0 V and 0.6 V, which is of course not sufficient in practice. Therefore, in addition to the prior art, the possibility is provided to deactivate individual transistors in order to be able to set the high voltage U HV in steps of 0.6 V.
  • a divider ratio control 1 is provided, which controls switch 3, each bridging a diode.
  • the fine control of the divider ratio then takes place by the corresponding control of the transistor T R with the voltage U 2 .
  • a change of U 2 is not the number of diodes of the divider. Small unintentional deviations from U 2 therefore do not lead to a large error in the high voltage U HV .
  • the maximum expected fault of the high voltage is relatively low, ie it is at most 0.6 V, if this is the intended voltage drop per diode.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Claims (7)

  1. Montage de régulation de la tension, comprenant un diviseur de tension, qui est monté entre un premier potentiel (UBV) et un potentiel de référence et qui a une pluralité de diodes (T1 .. Tn) montées en série, une tension (Uout) de sortie pouvant être prélevée à une borne d'une diode, un circuit (2) de régulation auquel s'applique la tension (Uout) de sortie et une tension (UREF) de référence pour la régulation du premier potentiel (UBV) sur la base d'une comparaison de la tension (Uout) de sortie à la tension (UREF) de référence, le rapport de division pouvant être modifié par l'activation ou la désactivation d'une ou de plusieurs diodes (T1 .. Tn),
    caractérisé en ce que le rapport de division peut être modifié, en outre, en réglant le niveau de la chute de tension pour au moins l'une des diodes (T2).
  2. Montage suivant la revendication 1,
    caractérisé en ce que les diodes (T1 .. Tn) sont formées par des transistors MOS montés en diode.
  3. Montage suivant la revendication 1 ou 2,
    caractérisé en ce qu'il est prévu, pour prélever la tension (Uout) de sortie, la deuxième borne d'une première diode (T1) dont la première borne est reliée au potentiel (0) de référence.
  4. Montage suivant l'une des revendications 1 à 3,
    caractérisé en ce qu'il est prévu, pour régler la chute de tension aux bornes d'une diode (T2), un transistor (TR) monté en parallèle à celle-ci.
  5. Montage suivant la revendication 4,
    caractérisé en ce qu'il est monté, en parallèle à une deuxième diode (T2) reliée à la première diode (T1), un transistor (TR) pour abaisser la chute de tension aux bornes de la deuxième diode (T2).
  6. Montage suivant la revendication 4 ou 5,
    caractérisé en ce qu'un circuit de commande du transistor (TR) qui est monté en parallèle à une diode (T2) comprend un amplificateur (OP1) opérationnel par lequel le transistor peut être commandé, de manière à prendre à l'une des bornes de la diode (T2) une tension (U2) déterminée à l'avance.
  7. Utilisation d'un montage suivant l'une des revendications 1 à 6 dans un circuit intégré.
EP03722263A 2002-04-23 2003-04-07 Ensemble de circuits pour la regulation de tension comprenant un diviseur de tension Expired - Lifetime EP1497703B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10218097A DE10218097B4 (de) 2002-04-23 2002-04-23 Schaltungsanordnung zur Spannungsregelung
DE10218097 2002-04-23
PCT/DE2003/001135 WO2003091818A1 (fr) 2002-04-23 2003-04-07 Ensemble de circuits pour la regulation de tension comprenant un diviseur de tension

Publications (2)

Publication Number Publication Date
EP1497703A1 EP1497703A1 (fr) 2005-01-19
EP1497703B1 true EP1497703B1 (fr) 2006-11-02

Family

ID=29224686

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03722263A Expired - Lifetime EP1497703B1 (fr) 2002-04-23 2003-04-07 Ensemble de circuits pour la regulation de tension comprenant un diviseur de tension

Country Status (5)

Country Link
US (1) US7091770B2 (fr)
EP (1) EP1497703B1 (fr)
DE (2) DE10218097B4 (fr)
TW (1) TW200307946A (fr)
WO (1) WO2003091818A1 (fr)

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US6970794B2 (en) * 2002-09-19 2005-11-29 Marvell International Ltd. Semiconductor having reduced configuration pins and method thereof
US7940033B2 (en) * 2003-04-22 2011-05-10 Aivaka, Inc. Control loop for switching power converters
US7265523B2 (en) * 2005-10-24 2007-09-04 Aivaka Control loop for switching power converters
EP2021879A4 (fr) * 2006-04-26 2010-04-28 Aivaka Horloge à cycle d'utilisation et à fréquence régulés
US8797010B2 (en) * 2006-04-27 2014-08-05 Aivaka, Inc. Startup for DC/DC converters
US20080238530A1 (en) * 2007-03-28 2008-10-02 Renesas Technology Corp. Semiconductor Device Generating Voltage for Temperature Compensation
US7876079B2 (en) * 2009-03-24 2011-01-25 Infineon Technologies Ag System and method for regulating a power supply
EP2251955A1 (fr) * 2009-04-23 2010-11-17 ST-Ericsson SA (ST-Ericsson Ltd) Alimentation pour une horloge temps réel
TWI397812B (zh) * 2009-06-01 2013-06-01 Inventec Corp 測試板
US8547081B2 (en) * 2009-07-27 2013-10-01 Electronics And Telecommunications Research Institute Reference voltage supply circuit including a glitch remover
US20130127515A1 (en) * 2011-11-22 2013-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage dividing circuit
US9130478B2 (en) * 2013-03-08 2015-09-08 Infineon Technologies Ag Rectifier with bridge circuit and parallel resonant circuit
US9935560B2 (en) 2015-09-17 2018-04-03 Stmicroelectronics S.R.L. Electronic device with a maintain power signature (MPS) device and associated methods
US9813056B2 (en) * 2015-09-21 2017-11-07 Analog Devices Global Active device divider circuit with adjustable IQ
US10727543B2 (en) 2018-01-08 2020-07-28 Changs Ascending Enterprise Co., Ltd. Battery module system and method
TWI704438B (zh) * 2018-07-12 2020-09-11 立積電子股份有限公司 電壓控制裝置
CN110988645B (zh) * 2019-12-20 2022-03-22 西安西电电力系统有限公司 晶闸管级均压测试方法、装置
CN113009266B (zh) * 2021-03-18 2024-06-21 广州亚美智造科技有限公司 一种治具插拔检测电路

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Also Published As

Publication number Publication date
DE10218097A1 (de) 2003-11-13
US20050073285A1 (en) 2005-04-07
US7091770B2 (en) 2006-08-15
DE50305578D1 (de) 2006-12-14
EP1497703A1 (fr) 2005-01-19
TW200307946A (en) 2003-12-16
WO2003091818A1 (fr) 2003-11-06
DE10218097B4 (de) 2004-02-26

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