EP1656701A4 - Halbleitereinrichtung und verfahren - Google Patents

Halbleitereinrichtung und verfahren

Info

Publication number
EP1656701A4
EP1656701A4 EP04781659A EP04781659A EP1656701A4 EP 1656701 A4 EP1656701 A4 EP 1656701A4 EP 04781659 A EP04781659 A EP 04781659A EP 04781659 A EP04781659 A EP 04781659A EP 1656701 A4 EP1656701 A4 EP 1656701A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
associated method
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04781659A
Other languages
English (en)
French (fr)
Other versions
EP1656701A2 (de
Inventor
Milton Feng
Nick Holonyak Jr
Walid Hafez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois at Urbana Champaign
University of Illinois System
Original Assignee
University of Illinois at Urbana Champaign
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/646,457 external-priority patent/US20050040432A1/en
Priority claimed from US10/861,320 external-priority patent/US7998807B2/en
Priority claimed from US10/861,103 external-priority patent/US7091082B2/en
Application filed by University of Illinois at Urbana Champaign, University of Illinois System filed Critical University of Illinois at Urbana Champaign
Publication of EP1656701A2 publication Critical patent/EP1656701A2/de
Publication of EP1656701A4 publication Critical patent/EP1656701A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
EP04781659A 2003-08-22 2004-08-20 Halbleitereinrichtung und verfahren Withdrawn EP1656701A4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/646,457 US20050040432A1 (en) 2003-08-22 2003-08-22 Light emitting device and method
US10/861,320 US7998807B2 (en) 2003-08-22 2004-06-04 Method for increasing the speed of a light emitting biopolar transistor device
US10/861,103 US7091082B2 (en) 2003-08-22 2004-06-04 Semiconductor method and device
PCT/US2004/027019 WO2005020287A2 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Publications (2)

Publication Number Publication Date
EP1656701A2 EP1656701A2 (de) 2006-05-17
EP1656701A4 true EP1656701A4 (de) 2007-10-10

Family

ID=34222410

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04781659A Withdrawn EP1656701A4 (de) 2003-08-22 2004-08-20 Halbleitereinrichtung und verfahren

Country Status (5)

Country Link
EP (1) EP1656701A4 (de)
JP (1) JP2007503710A (de)
KR (1) KR20060063947A (de)
CA (1) CA2536329A1 (de)
WO (1) WO2005020287A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006317571A (ja) * 2005-05-11 2006-11-24 Fuji Photo Film Co Ltd 光学補償フィルム、偏光板および液晶表示装置
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
KR20070117238A (ko) * 2006-06-08 2007-12-12 삼성전기주식회사 반도체 발광 트랜지스터
US7711015B2 (en) 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
CN100466313C (zh) * 2007-05-21 2009-03-04 华南师范大学 ppn型发光晶体管及其制备方法
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
WO2009051664A2 (en) 2007-10-12 2009-04-23 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
EP2245676A1 (de) * 2008-01-21 2010-11-03 Insiava (Pty) Limited Halbleiter-lichtemissionsvorrichtung mit durchgreifeffekt
JP5653934B2 (ja) * 2009-01-08 2015-01-14 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 発光並びにレーザ半導体素子および方法
JP5739357B2 (ja) * 2011-03-04 2015-06-24 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
US9588310B2 (en) 2012-06-25 2017-03-07 Quantum Elctro Opto Systems Sdn Bhd. Method and apparatus for aligning of opto-electronic components
US8948226B2 (en) 2012-08-20 2015-02-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method for producing light and laser emission
US10874876B2 (en) * 2018-01-26 2020-12-29 International Business Machines Corporation Multiple light sources integrated in a neural probe for multi-wavelength activation
JP7216270B2 (ja) * 2018-09-28 2023-02-01 日亜化学工業株式会社 半導体発光素子
CN115642476B (zh) * 2022-10-31 2026-02-06 太原理工大学 基于晶体管激光器光反馈结构的宽带混沌激光产生装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 半導体発光素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04237135A (ja) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> 半導体積層構造体
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
JP2853432B2 (ja) * 1992-01-08 1999-02-03 日本電気株式会社 半導体光集積素子
JPH06260493A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
SE511314C2 (sv) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Framställning av heterobipolär transistor och laserdiod på samma substrat
US6707074B2 (en) * 2000-07-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and apparatus for driving the same
JP2002164352A (ja) * 2000-09-13 2002-06-07 Toshiba Corp バイポーラトランジスタ、半導体発光素子、及び半導体素子
JP2002190448A (ja) * 2000-12-20 2002-07-05 Fujitsu Ltd 基板、電子装置およびそれらの製造方法
FR2820890A1 (fr) * 2001-02-15 2002-08-16 Cit Alcatel Composant optique integre monolithique comportant un modulateur et un transistor bipolaire a heterojonction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 半導体発光素子

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FENG M ET AL: "Light-emitting transistor: light emission from InGaP/GaAs heterojunction bipolar transistors", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 1, 5 January 2004 (2004-01-05), pages 151 - 153, XP002448259, ISSN: 0003-6951 *
FENG M ET AL: "Quantum-well-base heterojunction bipolar light-emitting transistor", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 11, 15 March 2004 (2004-03-15), pages 1952 - 1954, XP002448258, ISSN: 0003-6951 *
JAIN F ET AL: "RESONANT TUNNELING TRANSISTOR LASERS: A NEW APPROACH TO OBTAIN MULTI-STATE SWITCHING AND BISTABLE OPERATION", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, SPRINGER, DORDRECHT, NL, vol. 14, no. 6, 1 June 1993 (1993-06-01), pages 1311 - 1322, XP000381013, ISSN: 0195-9271 *
MORI Y ET AL: "Operation principle of the InGaAsP/InP laser transistor", APPLIED PHYSICS LETTERS USA, vol. 47, no. 7, 1 October 1985 (1985-10-01), pages 649 - 651, XP002448260, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
JP2007503710A (ja) 2007-02-22
WO2005020287A9 (en) 2005-03-31
KR20060063947A (ko) 2006-06-12
WO2005020287A2 (en) 2005-03-03
WO2005020287A3 (en) 2005-05-06
CA2536329A1 (en) 2005-03-03
EP1656701A2 (de) 2006-05-17

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Legal Events

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Effective date: 20060307

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DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20070912

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/737 20060101ALI20070903BHEP

Ipc: H01L 29/205 20060101AFI20050512BHEP

Ipc: H01L 33/00 20060101ALI20070903BHEP

Ipc: H01S 5/06 20060101ALI20070903BHEP

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Effective date: 20130703

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