EP1840963A2 - Agencement à contact de pression doté d'un composant de puissance, d'un corps formé de métal et d'un dispositif de liaison - Google Patents

Agencement à contact de pression doté d'un composant de puissance, d'un corps formé de métal et d'un dispositif de liaison Download PDF

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Publication number
EP1840963A2
EP1840963A2 EP07005336A EP07005336A EP1840963A2 EP 1840963 A2 EP1840963 A2 EP 1840963A2 EP 07005336 A EP07005336 A EP 07005336A EP 07005336 A EP07005336 A EP 07005336A EP 1840963 A2 EP1840963 A2 EP 1840963A2
Authority
EP
European Patent Office
Prior art keywords
connecting device
power component
housing
pressure
shaped body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07005336A
Other languages
German (de)
English (en)
Other versions
EP1840963A3 (fr
Inventor
Heinrich Dr. Heilbronner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38051804&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP1840963(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Semikron GmbH and Co KG, Semikron Elektronik GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of EP1840963A2 publication Critical patent/EP1840963A2/fr
Publication of EP1840963A3 publication Critical patent/EP1840963A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/641—Snap-on arrangements, e.g. clips

Definitions

  • the invention describes a pressure-contacted arrangement with at least one power component, a metal shaped body, which is preferably designed as a heat sink, and a connecting device.
  • the power component is electrically and thermally conductively connected to the metal moldings.
  • the entire arrangement is designed for high temperature loads over 175 ° C and high temperature fluctuations up to 150 ° C suitable.
  • the power component is formed with the connecting device as a screw or screw thyristor or as Pressfitdiode.
  • the connecting device as a screw or screw thyristor or as Pressfitdiode.
  • such components have a metallic housing, a semiconductor body arranged therein, and a connection device.
  • the semiconductor body is electrically conductively connected to the housing, wherein solder joints are used in the prior art.
  • the connecting device is connected by soldering to the semiconductor body.
  • a further metal shaped body is arranged between the semiconductor body and the housing and / or connecting device. This preferably has a thermal Expansion coefficient, which lies between that of the semiconductor body and that of the housing or the connecting device.
  • the housing is cast with a plastic.
  • a disadvantage of such devices is that they have only a very limited temperature resistance to temperatures of more than 150 ° C by their design. Likewise, the durability is limited especially at high temperature change rates.
  • Screw diodes or SSthyristoren be screwed according to the prior art with a metal moldings, which usually also serves as a cooling device and also electrically contacted. Pressfit diodes are pressed into a metal moldings for electrical contacting and heat dissipation. Such arrangements are often used in the automotive industry.
  • the object of the invention is to present an arrangement with at least one power component, a connection device and at least one metal shaped body for heat dissipation and electrical contacting of the power component, this arrangement having a temperature resistance to temperatures of more than 175 ° C. and for temperature fluctuations of more than 150 ° C is suitable.
  • the inventive idea is based on a pressure-contacted arrangement with at least one power component, a connecting device and at least one first metal molded body for heat dissipation.
  • the power component is designed as a semiconductor body with at least one pn junction.
  • Such power devices are exemplary diodes, transistors and thyristors.
  • the at least one power component is arranged with its first main surface facing the cooling component and electrically conductively connected thereto.
  • a further metal shaped body is arranged between the power component and the metal shaped body in order to bring about a compensation of different thermal expansion coefficients.
  • the connection between power component and further metal shaped body is designed as a pressure sintered connection.
  • the second main surface of the power component is electrically conductively connected to a contact device of the connection device.
  • a housing encloses at least one power component and closes this off by means of at least one sealing device for the first metal molded body and the connecting device out.
  • the pressure contact is formed by a pressure device that initiates pressure on the housing and / or the connecting device in the direction of the first metal molded body.
  • the arrangement has no connections, such as solder joints, which does not offer the required temperature resistance.
  • Fig. 1 shows a first embodiment of an inventive arrangement.
  • Fig. 2 shows a second embodiment of an arrangement according to the invention.
  • Fig. 1 shows a first embodiment of an inventive arrangement (1).
  • a power component (10) here a power diode. Its anode is electrically conductively connected to a first metal shaped body (60), which is designed here as a heat sink.
  • This connection is formed by the power diode (10) with a second metal moldings (20) is integrally connected by means of a pressure sintered connection.
  • the second metal shaped body (20) projects beyond the semiconductor body (10) of the power diode in each case in the lateral direction.
  • This composite of power diode (10) and second metal shaped body (20) is arranged in a form-fitting manner on the heat sink (60).
  • the cathode of the power diode (10) is also positively connected to a contact device (32) of a connecting device (30).
  • the power diode (10) with the contact device (32) of the connecting device (30) and the second metal shaped body (20) is enclosed by a housing (40).
  • the housing up to over 200 ° C temperature-resistant elastic sealing means (44). From this, a first seals the housing (40) to the heat sink (60) and the second seals the housing (40) to the connection device (30) from.
  • a suitable sealing device is arranged on the surface of the housing facing the power component such that a termination of the power component is ensured.
  • the positive connections between the heat sink (60) and the second metal shaped body (20) and between the power component (10) and the connecting device (30) are formed by pressurizing the housing (40) by means of a pressure device (50).
  • This pressure device is formed by at least two, preferably three, retaining clips (52). These retaining clips (52) are supported against an abutment (62) in or on the heat sink (60) and against a holding device (42) of the housing (40).
  • the positive connections, as well as the electrical contact are formed. Due to the excellent durability, even at high operating temperatures and a variety of temperature changes, the positive pressure-contacted electrical connections, this arrangement (1) is particularly preferred for applications in harsh environmental conditions.
  • Fig. 2 shows a second embodiment of an inventive arrangement (1).
  • a subcircuit of a rectifier circuit arrangement is shown.
  • Two first metal moldings (60) form the direct current connection lines.
  • a plurality of power components (10), here again power diodes, without being limited to this component type, are arranged on the direct-current connection line of positive polarity.
  • Each power diode (10) is formed in a composite with a second metal shaped body (20) and electrically connected to its cathode with the DC power supply line (60).
  • the respective anode of the power diodes (10) is electrically conductively connected to an associated contact device (32) of a connecting device (30).
  • This connection device (30) forms the AC connection line of the arrangement (1).
  • the DC connection cable of negative polarity is connected to the cathodes of the power diodes (10) arranged thereon. Their anodes are in turn electrically connected to the AC power supply line (30).
  • the electrically conductive connections between the DC power supply lines (60) and the second metal moldings (20) and between the AC power supply line (30) with the associated pads of the power diodes (10) are each formed positively.
  • the arrangement has a pressure device (50), which is formed here by a spring-loaded, suitably electrically insulated, screw connection (54) between the two direct current connection lines (60).
  • the pressure device (50) designed by way of example with disk springs (56) acts on the form-fitting connections with pressure in each case in the direction of the DC connection lines (60). This creates the well-known durably pressure contact.
  • the pressure device (50) has a suitable insulation surrounding the screw (64) on at least one DC connection line (60).
  • a composite of power component (10) and second metal shaped body (20) is enclosed by a separate housing (40).
  • This is formed as a plastic molded body, each with an elastic and temperature-resistant sealing means (44) to the power supply lines (30, 60). It may be preferable to enclose a plurality of power components with associated second metal moldings with a common housing.

Landscapes

  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
EP07005336A 2006-03-28 2007-03-15 Agencement à contact de pression doté d'un composant de puissance, d'un corps formé de métal et d'un dispositif de liaison Withdrawn EP1840963A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006014145.8A DE102006014145C5 (de) 2006-03-28 2006-03-28 Druck kontaktierte Anordnung mit einem Leistungsbauelement, einem Metallformkörper und einer Verbindungseinrichtung

Publications (2)

Publication Number Publication Date
EP1840963A2 true EP1840963A2 (fr) 2007-10-03
EP1840963A3 EP1840963A3 (fr) 2008-07-02

Family

ID=38051804

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07005336A Withdrawn EP1840963A3 (fr) 2006-03-28 2007-03-15 Agencement à contact de pression doté d'un composant de puissance, d'un corps formé de métal et d'un dispositif de liaison

Country Status (2)

Country Link
EP (1) EP1840963A3 (fr)
DE (1) DE102006014145C5 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2849222A3 (fr) * 2013-09-12 2015-06-17 LSIS Co., Ltd. Convertisseur de puissance

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304884B2 (en) * 2009-03-11 2012-11-06 Infineon Technologies Ag Semiconductor device including spacer element
DE102011004541B4 (de) * 2011-02-22 2014-07-17 Infineon Technologies Bipolar Gmbh & Co. Kg Verbessertes Leistungshalbleitermodul, Anordnung aus Modul und Kühlkörper sowie Verwendung des Moduls

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439139A1 (de) 1961-08-12 1968-12-12 Siemens Ag Halbleiteranordnung
GB1243363A (en) 1968-01-12 1971-08-18 Siemens Ag Rectifying apparatus
GB1539643A (en) 1976-11-11 1979-01-31 Ostbo N Burner fired furnace
DE2940571A1 (de) 1979-10-06 1981-04-16 Brown, Boveri & Cie Ag, 6800 Mannheim Modul aus wenigstens zwei halbleiterbauelementen

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140677A (en) * 1965-05-07 1969-01-22 Ass Elect Ind Improvements relating to semi-conductor devices
US3437887A (en) * 1966-06-03 1969-04-08 Westinghouse Electric Corp Flat package encapsulation of electrical devices
JPS4919024B1 (fr) * 1968-09-11 1974-05-14
DE2654532C3 (de) * 1976-12-02 1982-03-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Scheibenförmige Halbleiterzelle
DE3143335A1 (de) * 1981-10-31 1983-05-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitervorrichtung
DE3508456C2 (de) * 1985-03-09 1987-01-08 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls
IN168174B (fr) * 1986-04-22 1991-02-16 Siemens Ag
DE4040753A1 (de) * 1990-12-19 1992-06-25 Siemens Ag Leistungshalbleiterbauelement
DE4137711A1 (de) * 1991-11-15 1993-05-19 Ditec Marketing Ag Dichtung fuer domdeckel von tanks oder dergleichen
DE4300516C2 (de) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Leistungshalbleitermodul
JP3533317B2 (ja) * 1997-08-28 2004-05-31 株式会社東芝 圧接型半導体装置
DE19903245A1 (de) * 1999-01-27 2000-08-03 Asea Brown Boveri Leistungshalbleitermodul
DE10017752A1 (de) * 2000-04-10 2001-10-18 Fraunhofer Ges Forschung Empfänger für eine drahtlose Energieübertragung
DE10048859B4 (de) * 2000-10-02 2005-12-15 Infineon Technologies Ag Druckkontaktanordnung sowie deren Verwendung
US6853068B1 (en) * 2002-05-22 2005-02-08 Volterra Semiconductor Corporation Heatsinking and packaging of integrated circuit chips

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439139A1 (de) 1961-08-12 1968-12-12 Siemens Ag Halbleiteranordnung
GB1243363A (en) 1968-01-12 1971-08-18 Siemens Ag Rectifying apparatus
GB1539643A (en) 1976-11-11 1979-01-31 Ostbo N Burner fired furnace
DE2940571A1 (de) 1979-10-06 1981-04-16 Brown, Boveri & Cie Ag, 6800 Mannheim Modul aus wenigstens zwei halbleiterbauelementen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2849222A3 (fr) * 2013-09-12 2015-06-17 LSIS Co., Ltd. Convertisseur de puissance
US9554492B2 (en) 2013-09-12 2017-01-24 Lsis Co., Ltd. Power converter

Also Published As

Publication number Publication date
DE102006014145B4 (de) 2011-05-26
DE102006014145C5 (de) 2015-12-17
DE102006014145A1 (de) 2007-10-11
EP1840963A3 (fr) 2008-07-02

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