EP1858078A4 - Element pour un dispositif semi-conducteur et procede pour sa fabrication - Google Patents

Element pour un dispositif semi-conducteur et procede pour sa fabrication

Info

Publication number
EP1858078A4
EP1858078A4 EP06711530A EP06711530A EP1858078A4 EP 1858078 A4 EP1858078 A4 EP 1858078A4 EP 06711530 A EP06711530 A EP 06711530A EP 06711530 A EP06711530 A EP 06711530A EP 1858078 A4 EP1858078 A4 EP 1858078A4
Authority
EP
European Patent Office
Prior art keywords
aluminum
semiconductor device
silicon carbide
equal
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06711530A
Other languages
German (de)
English (en)
Other versions
EP1858078A1 (fr
Inventor
Akira Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ALMT Corp
Original Assignee
ALMT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ALMT Corp filed Critical ALMT Corp
Publication of EP1858078A1 publication Critical patent/EP1858078A1/fr
Publication of EP1858078A4 publication Critical patent/EP1858078A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Die Bonding (AREA)
EP06711530A 2005-01-20 2006-01-11 Element pour un dispositif semi-conducteur et procede pour sa fabrication Withdrawn EP1858078A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005012221 2005-01-20
PCT/JP2006/300181 WO2006077755A1 (fr) 2005-01-20 2006-01-11 Element pour un dispositif semi-conducteur et procede pour sa fabrication

Publications (2)

Publication Number Publication Date
EP1858078A1 EP1858078A1 (fr) 2007-11-21
EP1858078A4 true EP1858078A4 (fr) 2009-03-04

Family

ID=36692145

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06711530A Withdrawn EP1858078A4 (fr) 2005-01-20 2006-01-11 Element pour un dispositif semi-conducteur et procede pour sa fabrication

Country Status (5)

Country Link
US (1) US7749430B2 (fr)
EP (1) EP1858078A4 (fr)
JP (1) JP4913605B2 (fr)
CN (1) CN100590856C (fr)
WO (1) WO2006077755A1 (fr)

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* Cited by examiner, † Cited by third party
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CN101427367B (zh) 2006-04-26 2010-06-02 电气化学工业株式会社 铝-碳化硅复合体和使用该复合体的散热零件
JP5028147B2 (ja) * 2007-05-29 2012-09-19 株式会社アライドマテリアル 半導体装置用ヒートスプレッダとその製造方法
KR101721818B1 (ko) * 2008-07-17 2017-03-30 덴카 주식회사 알루미늄-다이아몬드계 복합체 및 그 제조 방법
WO2010038483A1 (fr) * 2008-10-03 2010-04-08 住友電気工業株式会社 Elément composite
CN102317236B (zh) * 2009-02-12 2014-04-09 电气化学工业株式会社 由铝-石墨复合体形成的基板、使用了该基板的散热部件及led发光构件
JP2010278171A (ja) * 2009-05-28 2010-12-09 Denki Kagaku Kogyo Kk パワー半導体及びその製造方法
KR101690820B1 (ko) * 2009-09-09 2016-12-28 미쓰비시 마테리알 가부시키가이샤 히트 싱크 부착 파워 모듈용 기판의 제조 방법, 히트 싱크 부착 파워 모듈용 기판 및 파워 모듈
TWI589042B (zh) * 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 發光裝置，撓性發光裝置，電子裝置，照明設備，以及發光裝置和撓性發光裝置的製造方法
US9000442B2 (en) * 2010-01-20 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device
CN102834534B (zh) * 2010-04-02 2014-07-30 住友电气工业株式会社 镁基复合构件、散热构件和半导体装置
US9795057B2 (en) 2010-07-28 2017-10-17 Wolverine Tube, Inc. Method of producing a liquid cooled coldplate
US10531594B2 (en) 2010-07-28 2020-01-07 Wieland Microcool, Llc Method of producing a liquid cooled coldplate
US20120026692A1 (en) 2010-07-28 2012-02-02 Wolverine Tube, Inc. Electronics substrate with enhanced direct bonded metal
JP2012057252A (ja) * 2010-08-12 2012-03-22 Denki Kagaku Kogyo Kk アルミニウム−炭化珪素質複合体
TWI490117B (zh) * 2010-11-24 2015-07-01 國立清華大學 具氮化鋁薄膜之熱擴散元件及其製作方法
CN102130020A (zh) * 2011-01-04 2011-07-20 株洲南车时代电气股份有限公司 一种碳化硅功率器件的封装方法
JP2012197496A (ja) * 2011-03-22 2012-10-18 Sumitomo Electric Ind Ltd 複合部材
WO2013011668A1 (fr) * 2011-07-15 2013-01-24 日本軽金属株式会社 Matériau composite pour substrat dissipateur de chaleur et procédé de fabrication d'un matériau composite pour substrat dissipateur de chaleur
WO2013033601A2 (fr) 2011-09-02 2013-03-07 Wolverine Tube, Inc. Plaque de base en métal plaqué améliorée
JP5856801B2 (ja) * 2011-10-20 2016-02-10 昭和電工株式会社 電子素子搭載用基板および放熱装置
BR112015006630A2 (pt) * 2012-09-28 2017-07-04 Dow Global Technologies Llc aparelho
JP6099453B2 (ja) * 2012-11-28 2017-03-22 Ｄｏｗａメタルテック株式会社 電子部品搭載基板およびその製造方法
JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
CN104733399A (zh) * 2013-12-24 2015-06-24 北京有色金属研究总院 一种层状高导热绝缘基板及其制备方法
WO2016035796A1 (fr) 2014-09-02 2016-03-10 株式会社アライドマテリアル Élément de dissipation de chaleur et procédé de production d'élément de dissipation de chaleur
CN105390474A (zh) * 2015-12-09 2016-03-09 北京有色金属研究总院 一种高导热低膨胀导电图形板及其制备方法
DE112017002999B4 (de) * 2016-06-16 2022-03-24 Mitsubishi Electric Corporation Halbleiter-montage-wärmeabführungs-basisplatte und herstellungsverfahren für dieselbe
EP3399546A1 (fr) * 2017-05-02 2018-11-07 Siemens Aktiengesellschaft Module électronique comprenant un élément de construction inséré entre deux substrats et son procédé de fabrication
JP6962803B2 (ja) * 2017-12-11 2021-11-05 Ｄｏｗａホールディングス株式会社 クラッド材およびその製造方法
CN110434334A (zh) * 2019-08-19 2019-11-12 常州泰格尔电子材料科技有限公司 一种厨具用超导热解冻板的制备方法
EP4411810A4 (fr) * 2021-10-06 2025-02-12 Denka Company Limited Élément de dissipation de chaleur
WO2023058597A1 (fr) * 2021-10-06 2023-04-13 デンカ株式会社 Élément de dissipation de chaleur
CN116618647B (zh) * 2023-07-21 2023-10-13 安徽诺星航空科技有限公司 一种钼铜合金复合材料及其制备工艺

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US5774336A (en) * 1996-02-20 1998-06-30 Heat Technology, Inc. High-terminal conductivity circuit board
US6388273B1 (en) * 1996-06-14 2002-05-14 Sumitomo Electric Industries, Ltd. Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same
EP1498946A1 (fr) * 2002-04-19 2005-01-19 Mitsubishi Materials Corporation Carte de circuits imprimes, son procede de production et module de puissance

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JP2004104074A (ja) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd 半導体装置用部材
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Publication number Priority date Publication date Assignee Title
EP0629595A2 (fr) * 1988-01-27 1994-12-21 W.R. Grace & Co.-Conn. Pièces plate céramiques comprimés à chaud utilisables pour la fabrication de composantes électroniques simple ou multicouches
US5774336A (en) * 1996-02-20 1998-06-30 Heat Technology, Inc. High-terminal conductivity circuit board
US6388273B1 (en) * 1996-06-14 2002-05-14 Sumitomo Electric Industries, Ltd. Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same
EP1498946A1 (fr) * 2002-04-19 2005-01-19 Mitsubishi Materials Corporation Carte de circuits imprimes, son procede de production et module de puissance

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Title
See also references of WO2006077755A1 *

Also Published As

Publication number Publication date
US7749430B2 (en) 2010-07-06
WO2006077755A1 (fr) 2006-07-27
JP4913605B2 (ja) 2012-04-11
JPWO2006077755A1 (ja) 2008-06-19
CN101107707A (zh) 2008-01-16
CN100590856C (zh) 2010-02-17
US20080122052A1 (en) 2008-05-29
EP1858078A1 (fr) 2007-11-21

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