EP1893320A2 - Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma - Google Patents

Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma

Info

Publication number
EP1893320A2
EP1893320A2 EP06753692A EP06753692A EP1893320A2 EP 1893320 A2 EP1893320 A2 EP 1893320A2 EP 06753692 A EP06753692 A EP 06753692A EP 06753692 A EP06753692 A EP 06753692A EP 1893320 A2 EP1893320 A2 EP 1893320A2
Authority
EP
European Patent Office
Prior art keywords
oxygen
hydrogen
treatment
plasma
based plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06753692A
Other languages
English (en)
French (fr)
Other versions
EP1893320B8 (de
EP1893320B1 (de
Inventor
Anastasia Alekseeva
Kirill Kovnir
Pavel Chizhov
Michael Baitinger
Yuri Grin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority to EP06753692A priority Critical patent/EP1893320B8/de
Publication of EP1893320A2 publication Critical patent/EP1893320A2/de
Application granted granted Critical
Publication of EP1893320B1 publication Critical patent/EP1893320B1/de
Publication of EP1893320B8 publication Critical patent/EP1893320B8/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/023Boron
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2251/00Reactants
    • B01D2251/20Reductants
    • B01D2251/202Hydrogen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/10Single element gases other than halogens
    • B01D2257/104Oxygen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2259/00Type of treatment
    • B01D2259/80Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818Employing electrical discharges or the generation of a plasma

Definitions

  • the present invention relates to a purification method for removing oxygen from materials.
  • Oxygen contamination of material represents a problem for a wide range of raw materials in science and industry. Removal or depleting of oxygen contamination often represent a problem or a task which can be overcome only heavily and under big efforts. These problems often are amplified by the essential character of oxygen impurities which are caused by absorption and/or reaction of raw materials with naturally abandoned O 2 . Due to the presence of oxygen in air oxygen contaminations are practically all- pervasive. In addition to this, the removal of oxygen contaminations is often complicated by the formation of oxides of high stability.
  • the task of the subject invention was to provide a purification method for removing oxygen, in particular a procedure allowing to avoid a thermal treatment or a treatment leaving a reducing agent within the material.
  • this task was resolved by a purification method for removing oxygen from material wherein a material, containing oxygen impurities, is subjected to a treatment with hydrogen-based plasma.
  • the procedure of the present invention consisting in the treatment with hydrogen-based plasma generally can be applied for all materials in order to remove impurities containing oxygen.
  • a temperature stable material is used, in particular a material which distinctly does not evaporate at temperatures of ⁇ 600 0 C, more preferably of ⁇ 750 0 C, and most preferably of ⁇ 950 0 C and which is not subject to any other degradation process.
  • the used materials are elements, in particular metals or non- metallic elements.
  • compounds consisting of more than one element can be purified by the present invention.
  • the purification method of the invention is used for removing oxygen from boron, in particular from amorphous boron.
  • Oxygen contamination of amorphous boron is especially difficult to remove and represents a serious problem.
  • Industrial routes for producing amorphous boron usually include reduction of B 2 O 3 by a suitable reducing agent. With such a treatment, an amorphous boron material is usually obtained in such a treatment which contains up to 4 mass-% of oxygen. This hinders the application of this material, e.g. for chemical preparations since in many fields of application it is necessary that the amorphous boron oxygen used is free or at least shows a minimally possible oxygen content.
  • Amorphous boron is often used for this purpose since it shows a considerably higher chemical reactivity in chemical reactions compared to crystalline boron.
  • attempts to purify amorphous boron by any kind of thermal treatment leading to boron oxide evaporation result in crystallization of boron and thus the transformation of the amorphous boron to the undesired crystalline form.
  • metals can mostly be cleaned from their oxides also in arbitrary stoves with hydrogen gas.
  • these conventional cleaning methods lead to sintering of the fine powders.
  • the microwave plasma furnace even finest metal powders can be cleaned completely from their oxides within few minutes and without any changes of the particle size. Temperature control is made by use of a sufficiently short pulsed plasma. The power of the microwave furnace is always adjusted to the oxide properties and the grain size of the 5 metal.
  • amorphous boron can be released from oxygen and the obtained product is an oxygen- free boron or boron with reduced oxygen content whereas boron is still amorphous.
  • all materials, which contain oxygen impurities, can be purified by means of the process of the invention.
  • materials are used as starting materials which have > 1 wt.-%, in particular ⁇ 4 wt.-% and preferably ⁇ 10 wt.-% of oxygen based on the total weight of the material.
  • the oxygen impurity can be present as oxygen in a distributed form or also o in a bonded form, especially in the form of oxides.
  • the process of the invention it is possible to considerably reduce the amount of oxygen, especially to a content of ⁇ 0.5 wt.%, more preferably to a content of ⁇ 0.1 wt.%, preferably ⁇ 0.05 wt.%, and even more preferably ⁇ 5 0.01 wt.-% of oxygen based on the total weight of the material.
  • the actual content of oxygen which is achieved depends on the respective treatment conditions and can be adjusted by a skilled artisan depending on the desired final value.
  • the treatment of the starting material is effected by a hydrogen-based plasma.
  • a plasma advantageously contains ⁇ 5 mass%, in particular ⁇ 20 mass%, preferably ⁇ 50 mass%, in particular ⁇ 90 mass%, preferably ⁇ 99 mass% and more preferably ⁇ 99.5 mass% of hydrogen, however, can also completely consist of hydrogen.
  • a gas atmosphere containing hydrogen and, if necessary, one or more inert gases having a desired pressure is provided.
  • the pressure is advantageously 0.1 to 100, especially 1 to 20 bar.
  • a pure hydrogen-based plasma or a plasma based on a mixture of hydrogen and at least one inert gas is selected from argon and nitrogen.
  • the oxygen content in the plasma is preferably ⁇ 10 ppm, especially ⁇ 5 ppm, more preferably ⁇ 1 ppm and most preferably ⁇ 0,6 ppm.
  • the oxygen content in the plasma is adjusted to 0.1 to 0.5 ppm.
  • the water content in the plasma advantageously is ⁇ 10 ppm, especially ⁇ 5 ppm, more preferably ⁇ 1 ppm and more preferably ⁇ 0,1 ppm.
  • the treatment with the hydrogen-based plasma can be carried out depending on the desired degree of removal of the oxygen for a variable duration, usually the duration between 0.5 to 10 h, especially between 2 and 5 h and often between 3 and 3.5 h are favourable.
  • the plasma treatment is preferably performed at a temperature from 700 0 C to 1 ,500 0 C, in particular from 800°C to 1 ,100°C.
  • the hydrogen plasma used according to the invention is a microwave induced plasma.
  • a microwave radiation source an energy source having 100 to 2,000 W, especially 500 to 1,000 W at 1 to 10 Ghz, especially 2 to 3 Ghz can for example be used.
  • H radicals and H + ions, generated in a plasma, in particular in a microwave induced plasma are very active so that in principal any kind of material can be purified by performing the inventive procedure.
  • the H radicals und H + ions are active enough to remove oxygen from amorphous boron which purification was not possible with methods of the state of the art so far by retaining the amorphous structure.
  • oxygen is removed in the presence of an oxygen getter.
  • an oxygen getter greatly enhances the purification efficiency. While any oxygen getter material can be used espcecially good results have been achieved with titanium.
  • the method according to the invention allows to perform a purification from oxygen impurities without contaminating the material by any other agent. In particular no reduction agents which might remain in the material are needed. Further, no microstructure changes occur which means that the structure of the raw material is the same as the microstructure of the treated material. This allows for example to maintain amorphous boron and just remove oxygen impurities without transforming the amorphous microstructure into a crystalline microstructure.
  • the present invention is further elucidated by the following example.
  • amorphous boron 99,999% with respect of metals, 4.05 ⁇ 0.21 mass.% of oxygen by ICP analysis
  • a quartz ampoule together with an additional crucible, containing an oxygen getter (e.g. titanium). All described operations were performed in an argon-filled glove box with controlled atmosphere ( ⁇ 0.1 ppm H 2 O, 0.1 - 0.6 ppm O 2 ).
  • the ampoule was evacuated, filled by the desired gas to the definite pressure and then sealed. Filling gas composition was varied to find the best one for the purification. Pure argon and nitrogen plasma treatment do not change the oxygen content. AiVH 2 based plasma (5% vol. of H 2 ) let to a reduction of oxygen content. The best results were achieved using pure hydrogen as the filling gas.
  • the ampoules were opened and then the probes for the chemical analysis were prepared in the glove box.
  • the best result (0.09 ⁇ 0.05 mass.% of oxygen after treatment) was achieved using H 2 plasma, Ti as a getter and a reaction time of about 3 to
  • Powder X-ray diffraction investigation revealed, that both starting material and plasma-treated product did not show sharp diffraction peaks and revealed only a wide intensity bump at a lower diffraction angles. This confirms the amorphous state of the material. Scanning electron microscopial observation revealed, that in the plasma-treated products the starting particles are sintered to larger conglomerates.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Biomedical Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Gas Separation By Absorption (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Drying Of Semiconductors (AREA)
  • Catalysts (AREA)
EP06753692A 2005-05-17 2006-05-17 Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma Not-in-force EP1893320B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06753692A EP1893320B8 (de) 2005-05-17 2006-05-17 Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP05010689 2005-05-17
EP05010789 2005-05-18
PCT/EP2006/004692 WO2006122794A2 (en) 2005-05-17 2006-05-17 Materials purification by treatment with hydrogen-based plasma
EP06753692A EP1893320B8 (de) 2005-05-17 2006-05-17 Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma

Publications (3)

Publication Number Publication Date
EP1893320A2 true EP1893320A2 (de) 2008-03-05
EP1893320B1 EP1893320B1 (de) 2009-12-09
EP1893320B8 EP1893320B8 (de) 2010-03-24

Family

ID=37057354

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06753692A Not-in-force EP1893320B8 (de) 2005-05-17 2006-05-17 Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma

Country Status (8)

Country Link
US (1) US7611686B2 (de)
EP (1) EP1893320B8 (de)
JP (1) JP4914438B2 (de)
CN (1) CN101222968B (de)
AT (1) ATE451165T1 (de)
DE (1) DE602006011007D1 (de)
RU (1) RU2403953C2 (de)
WO (1) WO2006122794A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008140785A1 (en) 2005-04-19 2008-11-20 Sdc Materials, Inc. Water cooling system and heat transfer system
US8507401B1 (en) 2007-10-15 2013-08-13 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US8470112B1 (en) 2009-12-15 2013-06-25 SDCmaterials, Inc. Workflow for novel composite materials
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8545652B1 (en) 2009-12-15 2013-10-01 SDCmaterials, Inc. Impact resistant material
US9039916B1 (en) 2009-12-15 2015-05-26 SDCmaterials, Inc. In situ oxide removal, dispersal and drying for copper copper-oxide
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
RU2014110365A (ru) 2011-08-19 2015-09-27 ЭсДиСиМАТИРИАЛЗ, ИНК. Подложки с покрытием для использования в катализе, каталитические конвертеры и способы покрытия подложек композициями покрытия из оксида
US8409537B2 (en) * 2011-08-29 2013-04-02 General Electric Company Method for removing contaminants from boron powder
US20130101488A1 (en) * 2011-10-19 2013-04-25 General Electric Company Optimized boron powder for neutron detection applications
US20130189633A1 (en) * 2012-01-19 2013-07-25 General Electric Company Method for removing organic contaminants from boron containing powders by high temperature processing
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
CN105592921A (zh) 2013-07-25 2016-05-18 Sdc材料公司 用于催化转化器的洗涂层和经涂覆基底及其制造和使用方法
RU2536980C1 (ru) * 2013-09-10 2014-12-27 Открытое акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (ОАО "Российские космические системы") Способ очистки, активации и осветления серебряных покрытий в газоразрядной плазме
MX2016004759A (es) 2013-10-22 2016-07-26 Sdcmaterials Inc Composiciones para trampas de oxidos de nitrogeno (nox) pobres.
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
EP3119500A4 (de) 2014-03-21 2017-12-13 SDC Materials, Inc. Zusammensetzungen für passive nox-adsorptionssysteme

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238450B (de) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze
GB1194415A (en) * 1967-07-03 1970-06-10 United States Borax Chem High Temperature Chemical Reaction and Apparatus therefor
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
US3723290A (en) * 1970-01-07 1973-03-27 United States Borax Chem High temperature chemical reaction apparatus
GB1390351A (en) * 1971-02-16 1975-04-09 Tetronics Research Dev Co Ltd High temperature treatment of materials
US3992200A (en) * 1975-04-07 1976-11-16 Crucible Inc. Method of hot pressing using a getter
FR2501529B1 (fr) * 1981-03-12 1987-03-06 Borax Francais Procede pour effectuer une reaction chimique fortement exothermique et appareil pour mettre en oeuvre ce procede
US4548688A (en) * 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US4503133A (en) * 1983-12-22 1985-03-05 Union Carbide Corporation Leak resistant galvanic cell and process for the production thereof
FR2594856A1 (fr) * 1986-02-27 1987-08-28 Photowatt Int Procede d'obtention de cristaux de silicium pour applications photovoltaiques
US4849164A (en) * 1988-02-29 1989-07-18 General Motors Corporation Method of producing iron powder article
JP2960652B2 (ja) * 1994-09-21 1999-10-12 実 一色 高純度金属の精製方法およびその精製装置
JPH10258262A (ja) * 1997-03-19 1998-09-29 Toshiba Corp 焼却灰処理装置
JP2000038622A (ja) * 1998-07-23 2000-02-08 Minoru Isshiki 遷移金属の純化精製方法
JP2000226607A (ja) * 1999-02-03 2000-08-15 Showa Kyabotto Super Metal Kk タンタル又はニオブ粉末とその製造方法
RU2159213C2 (ru) * 1999-02-25 2000-11-20 Абдюханов Мансур Абдрахманович Способ очистки кремния и устройство для его осуществления
JP4305792B2 (ja) * 1999-03-25 2009-07-29 ソニー株式会社 金属の精製方法及び精錬方法
JP2002150922A (ja) * 2000-08-31 2002-05-24 Sony Corp 電子放出装置、冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
US7144753B2 (en) * 2003-11-25 2006-12-05 Board Of Trustees Of Michigan State University Boron-doped nanocrystalline diamond
EP2140483A1 (de) * 2007-04-04 2010-01-06 Innovalight, Inc. Verfahren zur optimierung von dünnschichtbildung mit reaktiven gasen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2006122794A3 *

Also Published As

Publication number Publication date
JP2008545521A (ja) 2008-12-18
CN101222968B (zh) 2012-08-22
US7611686B2 (en) 2009-11-03
JP4914438B2 (ja) 2012-04-11
US20080311018A1 (en) 2008-12-18
DE602006011007D1 (de) 2010-01-21
RU2007146762A (ru) 2009-06-27
EP1893320B8 (de) 2010-03-24
WO2006122794A3 (en) 2007-02-01
RU2403953C2 (ru) 2010-11-20
ATE451165T1 (de) 2009-12-15
CN101222968A (zh) 2008-07-16
EP1893320B1 (de) 2009-12-09
WO2006122794A2 (en) 2006-11-23

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